• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.8
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• pp.1719-1724
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• 2004

In this paper, we have proposed a new structure of LDMOST, which has been expected as a next generation RF power device, to improve the BV(Breakdown Voltage) characteristics. The proposed structure, named external field ring, is formed around a drift region by the three dimensional structure. The external field ring relieves the electric field in the drift region and improves the BV characteristics. By the three dimensional TCAD simulations, it was found that the BV of LDMOST was increased by the increase of the junction depth and doping concentration of the external field ring. Therefore, the BV characteristics of the LDMOST can be remarkably improved by addition of external field ring using an existing p+ sinker process.

• Journal of Power Electronics
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• v.14 no.6
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• pp.1345-1356
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• 2014

The thermal behavior of power modules is an important criterion for the design of cooling systems and optimum thermal structure of these modules. An important consideration for high power and high frequency design is the spacing between semiconductor devices, substrate structure and influence of the boundary condition in the case. This study focuses on the thermal behavior of hybrid power modules to establish a simplified method that allows temperature estimation in different module components without decapsulation. This study resulted in a correction of the junction temperature values estimated from the transient thermal impedance of each component operating alone. The corrections depend on mutual thermal coupling between different chips of the hybrid structure. A new experimental technique for thermal mutual evaluation is presented. Notably, the classic analysis of thermal phenomena in these structures, which was independent of dissipated power magnitude and boundary conditions in the case, is incorrect.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.26.1-26.1
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• 2011

We investigated the atomic layer deposition (ALD) process for nitrogen doped ZnO and the application for n-ZnO : N/p-Si (NW) coaxial hetero-junction photodetectors. ALD ZnO:N was deposited using diethylzinc (DEZ) and diluted $NH_4OH$ at $150^{\circ}C$ of substrate temperature. About 100~300 nm diameter and 5 um length of Si nanowires array were prepared using electroless etching technique in 0.108 g of $AgNO_3$ melted 20 ml HF liquid at $75^{\circ}C$. TEM images showed ZnO were deposited on densely packed SiNW structure achieving extraordinary conformality. When UV (360 nm) light was illuminated on n-ZnO:N/p-SiNW, I-V curve showed about three times larger photocurrent generation than film structure at 10 V reverse bias. Especially, at 660 nm wave length, the coaxial structure has 90.8% of external quantum efficiency (EQE) and 0.573 A/W of responsivity.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.6
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• pp.601-607
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• 2015

A set of novel silicon controlled rectifier (SCR) devices' characteristics have been analyzed and verified under the electrostatic discharge (ESD) stress. A ring-shaped diffusion was added to their anode or cathode in order to improve the holding voltage (Vh) of SCR structure by creating new current discharging path and decreasing the emitter injection efficiency (${\gamma}$) of parasitic Bipolar Junction Transistor (BJT). ESD current density distribution imitated by 2-dimensional (2D) TCAD simulation demonstrated that an additional current path exists in the proposed SCR. All the related devices were investigated and characterized based on transmission line pulse (TLP) test system in a standard $0.5-{\mu}m$ 24 V CDMOS process. The proposed SCR devices with ring-shaped anode (RASCR) and ring-shaped cathode (RCSCR) own higher Vh than that of Simple SCR (S_SCR). Especially, the Vh of RCSCR has been raised above 33 V. What's more, their holding current is kept over 800 mA, which makes it possible to design power clamp with SCR structure for on chip ESD protection and keep the protected chip away from latch-up risk.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.4
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• pp.247-252
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• 2012

IGBT (insulated gate bipolar transistor) has been widely used around the power industry as it has good switching performance and its excellent conductance. In order to reduce power loss during switch turn-on state, it is essential to reduce its resistance. However, trade off relationship between breakdown voltage and device conductance is the greatest obstacle on the way of improvement. Floating island structure is one of the solutions. Still, under optimized device condition for the best performance, improvement rate is negligible. Therefore, this paper suggests adding trench gate on floating island structure to eliminate JFET (junction field effect transistor) area to reduce resistance and activate floating island effect. Experimental result by 2D simulation using TCAD, shows 20% improvement of turn-on state voltage drop.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.80-83
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• 2003

In this paper, the programming characteristics of the multi-bit devices based on SONOS structure are investigated. Our devices have been fabricated by $0.35\;{\mu}m$ complementary metal-oxide-semiconductor (CMOS) process with LOCOS isolation. In order to achieve the two-bits per cell operation, charges must be locally trapped in the nitride layer above the channel near the junction. Channel hot electron (CHE) injection for programming can operate in multi-bit using localized trap in nitride film. CHE injection in our devices is achieved with the single power supply of 5 V. To demonstrate CHE injection, substrate current (Isub) and one-shot programming curve were investigated. The multi-bit operation which stores two-bit per cell is investigated with a reverse read scheme. Also, hot hole injection for fast erasing is used. Due to the ultra-thin gate dielectrics, our results show many advantages which are simpler process, better scalability and lower programming voltage compared to any other two-bit storage flash memory. This fabricated structure and programming characteristics are shown to be the most promising for the multi-bit flash memory.

• 한국신재생에너지학회:학술대회논문집
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• 2006.06a
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• pp.228-231
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• 2006

This paper briefly introduces silicon based thin film solar cells: amorphous (a-Si:H), microcrystalline ${\mu}c-Si:H$ single junction and $a-Si:H/{\mu}c-Si:H$ tandem solar cells. The major difference of a-Si:H and ${\mu}c-Si:H$ cells comes from electro-optical properties of intrinsic Si-films (active layer) that absorb incident photon and generate electron-hole pairs. The a-Si:H film has energy band-gap (Eg) of 1.7-1.8eV and solar cells incorporating this wide Eg a-Si:H material as active layer commonly give high voltage and low current, when illuminated, compared to ${\mu}c-Si:H$ solar cells that employ low Eg (1.1eV) material. This Eg difference of two materials make possible tandem configuration in order to effectively use incident photon energy. The $a-Si:H/{\mu}c-Si:H$ tandem solar cells, therefore, have a great potential for low cost photovoltaic device by its various advantages such as low material cost by thin-film structure on low cost substrate instead of expensive c-Si wafer and high conversion efficiency by tandem structure. In this paper, the structure, process and operation properties of Si-based thin-film solar cells are discussed.

• Applied Microscopy
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• v.50
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• pp.20.1-20.9
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• 2020

Arthropods have an open circulatory system with a simple tubular heart, so it has been estimated that the contractile pumping structure of the cardiac muscle will be less efficient than that of vertebrates. Nevertheless, certain arthropods are known to have far superior properties and characteristics than vertebrates, so we investigated the fine structural features of intercalated discs and cardiac junctions of cardiac muscle cells in the black widow spider Latrodectus mactans. Characteristically, the spider cardiac muscle has typical striated features and represents a functional syncytium that supports multiple connections to adjacent cells by intercalated discs. Histologically, the boundary lamina of each sarcolemma connects to the basement membrane to form an elastic sheath, and the extracellular matrix allows the cells to be anchored to other tissues. Since the intercalated disc is also part of sarcolemma, it contains gap junctions for depolarization and desmosomes that keep the fibers together during cardiac muscle contraction. Furthermore, fascia adherens and macula adherens (desmosomes) were also identified as cell junctions in both sarcolemma and intercalated discs. To enable the coordinated heartbeat of the cardiac muscle, the muscle fibers have neuronal innervations by multiple axons from the motor ganglion.

• Journal of the Society of Naval Architects of Korea
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• v.60 no.1
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• pp.20-30
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• 2023

In this paper, the Energy Flow Finite Element Analysis (EFFEA) was performed to predict the acoustic and vibrational responses of complicated plate structures considering improved Fluid-Structure Interaction (FSI). For this, a new power transfer relationship was derived at the area junction where two different fluids are in contact on both sides of the plate. In order to increase the reliability of EFFEA of complicated plate structures immersed in a high-density fluid, the corrected flexural wavenumber and group velocity considering fluid-loading effect were derived. As the specific acoustic impedance of the fluid in contact with the plate increases, the flexural wavenumber of the plate increases. As a result, the flexural group velocity is reduced, and the spatial damping effect of the flexural energy density is increased. Additionally, for the EFFEA of arbitary-shaped built-up structures, the energy flow finite element formulation for the acoustic tetrahedral element was newly performed. Finally, for validation of the derived theory and developed software, numerical applications of complicated plate structures submerged in seawater or air were successfully performed.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.49 no.5
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• pp.16-21
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• 2012

For CMOS based bipolar junction transistor (BJT), a novel BJT structure which has higher matching property than conventional BJT structure was proposed and analyzed. The proposed structure shows a slight decrease of collector current density, $J_C$ about 0.361% and an increase of current gain, ${\beta}$ about 0.166% compared with the conventional structure. However, the proposed structure shows a decrease of area about 10% the improvement of matching characteristics of collector current ($A_{IC}$) and current gain ($A_{\beta}$) about 45.74% and 38.73% respectively. The improved matching characteristic of proposed structure is believed to be mainly due to the decreased distance between two emitters of pair BJTs, which results in the decreased effect of deep n-well of which resistance has the higher standard deviation than the other resistances.