• Journal of electromagnetic engineering and science
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• v.13 no.4
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• pp.214-223
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• 2013

This paper proposes a theoretical analysis of hidden device detection and a design of multiband circular polarization patch array antenna for non-linear junction detector system application. A good axial ratio of circular polarization patch antenna is realized by a new approach that employs inclined slots, two rectangular grooves and a truncated ground for the conventional antenna. A good axial ratio of the 1.5 dB lower is measured by having an asymmetric gap distance between the ground planes of the coplanar waveguide feeding structure. The common ground plane of the linear array has an optimum trapezoidal slot array to reduce the mutual coupling without increasing the distance between the radiators. The higher gain of about 1 dBi is realized by using the novel common ground structure. The measured return loss, gain, and axial ratio of the proposed single radiator, as well as the proposed array antennas, showed a good agreement with the simulated results.

• Proceedings of the Materials Research Society of Korea Conference
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• 1997.10a
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• pp.149-149
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• 1997

• Proceedings of the Materials Research Society of Korea Conference
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• 1997.10a
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• pp.59-59
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• 1997

• Proceedings of the Korean Nuclear Society Conference
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• 2002.05a
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• pp.327-327
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• 2002

• Proceedings of the Korean Nuclear Society Conference
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• 2005.05a
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• pp.75-76
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• 2005

• Proceedings of the Korean Magnestics Society Conference
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• 2005.12a
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• pp.184-185
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• 2005

• Journal of Korea Water Resources Association
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• v.38 no.8 s.157
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• pp.675-689
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• 2005

In this paper, it was analyzed the variation of hydraulic characteristics through changing discharge at main channel and lateral channel and state of hydraulic structure at the natural channel junction by experiment. The experimental area is chosen at the channel junction of Nam-Han river and Pyeongchang river. The scale of the experiment is 1/200 in horizontal, and 1/66.7 in vortical, so the distoration rate is 3. From the experiment, the reduction effect of the water level is $12\%$ in the case of removing intank dam, and $5\%$ at the hydro-electronic dam removing case. Furthermore, in the case of two hydraulic structures removing, the reduction effect of water level is $18\%$ at the channel junction. Also, the stagnation zone, which is cased diminution of the channel at the junction, is decreasing through removing the structures.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.7
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• pp.109-114
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• 2013

Power MOSFET (metal-oxide semiconductor field-effect transistor) are widely used in power electronics applications, such as BLDC (Brushless Direct Current) motor and power module, etc. For the conventional power MOSFET device structure, there exists a tradeoff relationship between specific on-state resistance and breakdown voltage. In order to overcome the tradeoff relationship, a non-uniform super-junction (SJ) trench MOSFET (TMOSFET) structure for an optimal design is proposed in this paper. It is required that the specific on-resistance of non-uniform SJ TMOSFET is less than that of uniform SJ TMOSFET under the same breakdown voltage. The idea with a linearly graded doping profile is proposed to achieve a much better electric field distribution in the drift region. The structure modelling of a unit cell, the characteristic analyses for doping density, and potential distribution are simulated by using of the SILVACO TCAD 2D device simulator, Atlas. As a result, the non-uniform SJ TMOSFET shows the better performance than the uniform SJ TMOSFET in the specific on-resistance at the class of 100V.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.320-320
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• 2014

Amorphous silicon alloy (a-Si) solar cells and modules have been receiving a great deal of attention as a low-cost alternate energy source for large-scale terrestrial applications. Key to the achievement of high-efficiency solar cells using the multi-junction approach is the development of high quality, low band-gap materials which can capture the low-energy photons of the solar spectrum. Several cell designs have been reported in the past where grading or buffer layers have been incorporated at the junction interface to reduce carrier recombination near the junction. We have investigated profiling the composition of the a-SiGe alloy throughout the bulk of the intrinsic material so as to have a built-in electrical field in a substantial portion of the intrinsic material. As a result, the band gap mismatch between a-Si:H and $a-Si_{1-x}Ge_x:H$ creates a barrier for carrier transport. Previous reports have proposed a graded band gap structure in the absorber layer not only effectively increases the short wavelength absorption near the p/i interface, but also enhances the hole transport near the i-n interface. Here, we modulated the GeH4 flow rate to control the band gap to be graded from 1.75 eV (a-Si:H) to 1.55 eV ($a-Si_{1-x}Ge_x:H$). The band structure in the absorber layer thus became like a U-shape in which the lowest band gap was located in the middle of the i-layer. Incorporation of this structure in the middle and top cell of the triple-cell configuration is expected to increase the conversion efficiency further.

• Journal of Magnetics
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• v.9 no.1
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• pp.13-16
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• 2004

Magnetic tunnel junctions (MTJs) comprising amorphous CoNbZr layers have been investigated. $Co_{85.5}Nb_8Zr_{6.5}$(in at. %) layers were employed to substitute the traditionally used Ta layers with an emphasis given on under-standing underlayer effect. The typical junction structure was $SiO_2/CoNbZr$ or Ta 2/CoFe 8/IrMn 7.5/CoFe 3/Al 1.6 + oxidation/CoFe 3/CoNbZr or Ta 2 (nm). For both as-deposited state and after annealing, the CoNbZr-underlayered structure showed superior surface smoothness up to the tunnel barrier than Ta-underlayerd one (rms roughness of 0.16 vs. 0.34 nm). CoNbZr-based MTJs was proven beneficial for increasing thermal stability and increasing $V_h$ (the bias voltage where MR ratio becomes half) characteristics than Ta-based MTJs. This is because the CoNbZr-based junctions offer smoother interface structure than the Ta-based one.