• Title/Summary/Keyword: josephson junction

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Superconductivity and physics (초전도와 물리학)

  • 오범환
    • Electrical & Electronic Materials
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    • v.9 no.3
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    • pp.304-309
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    • 1996
  • 본 고에서는 초전도에 관한 학문적 연구내용의 추이와 그 응용기술의 개발내용을 간략히 살펴보았다. 고온 초전도의 형성원리에 대한 학문적 관심과 응용기술 개발사이의 괴리를 이해하려는 노력의 일환으로 고온 초전도체를 주대상으로 한 각종 연구결과들을 소개하면서 순수학문과 공학기술과의 긴밀한 연관성을 찾았다. 전자와 정공의 도핑 대칭성을 확립한 Nd-Ce-Cu-O의 발견은 물성의 정확한 이해에 기초한 성공이었고, 산화물 고온 초전도체들의 전자쌍 파동함수의 대칭성에 관한 논의들에서 최근 연구의 주종을 이루고 있는 Josephson-coupling과 Photoemission등의 직관적인 결과를 주는 측정 실험들은 고도의 첨단기술과 죠셉슨 접합 등의 새로운 초전도 물성개념의 정확한 이해를 요하는 연구들이었다. 이러한 새로운 초전도 개념들의 토대위에 현 응용분야들의 추세를 대략 살핌으로써 부실하나마 미래의 차원 높은 수요에 대비한 학문적, 기술적 준비를 시도해 보았다.

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Oscillation of Critical Current by Gate Voltage in Cooper Pair Transistor (Cooper pair transistor에서 gate voltage에 의한 임계전류의 진동)

  • Song, W.;Chong, Y.;Kim, N.
    • Progress in Superconductivity
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    • v.11 no.2
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    • pp.158-161
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    • 2010
  • We measured the critical current of a Cooper pair transistor consisting of two Josephson junctions and a gate electrode. The Cooper pair transistors were fabricated by using electron-beam lithography and double-angle evaporation technique. The Gate voltage dependence of critical current was measured by observing voltage jumps at various gate voltages while sweeping bias current. The observed oscillation was 2e-periodic, which shows the Cooper pair transistor had low level of quasiparticle poisoning.

Magnetic Characteristics of BiPbSrCaCuO Oxide Superconductor (BPSCCO 자기 효과)

  • Lee, Sangl-Heon;Lee, Sung-Gap;Lee, Young-Hie
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.11a
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    • pp.252-254
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    • 2003
  • A magnetic field sensor is fabricated with superconducting ceramics system. The sensor at liquid nitrogen temperature shows the increase in electrical resistance by applying magnetic field. Actually, the voltage drop across the sensor is changed from zero to a value more than $100{\mu}V$ by the applied magnetic field. The change in electrical resistance depends on magnetic field. The sensitivity of this sensor is 2.9 ohm/T. The increase in electrical resistance by the magnetic field is ascribed to a modification of the Josephson junctions due to the penetrating magnetic flux into the superconducting material.

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Numerical study of topological SQUIDs

  • Soohong, Choi;Yeongmin, Jang;Sara, Arif;Yong-Joo, Doh
    • Progress in Superconductivity and Cryogenics
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    • v.24 no.4
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    • pp.11-15
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    • 2022
  • We conducted numerical calculations to obtain the critical current as a function of the magnetic flux through the topologically trivial and non-trivial superconducting quantum interference devices (SQUIDs), with varying the capacitive and inductive couplings of Josephson junctions (JJs). Our calculation results indicate that a nontrivial SQUID is almost indistinguishable from trivial SQUID, considering the effective capacitance coupling. When the SQUID contains 2π- and 4π-periodic supercurrents, the periodicity of the current-flux relation can be distinguished from the purely trivial or nontrivial SQUID cases, and its difference is sensitive to the relative ratio between the topologically trivial and nontrivial supercurrents. We believe that our calculation results would provide a practical guide to quantitatively measure the portion of the topologically nontrivial supercurrents in experiments.

A Japanese National Project for Superconductor Network Devices

  • Hidaka, M.
    • Progress in Superconductivity
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    • v.5 no.1
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    • pp.1-4
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    • 2003
  • A five-year project for Nb-based single flux quantum (SFQ) circuits supported by Japan's Ministry of Economy Trade and Industry (METI) in Japan was started in September 2002. Since April 2003, the New Energy and Industrial Technology Development Organization (NEDO) has supported this Superconductor Network Device Project. The aim of the project is to improve the integration level of Nb-based SFQ circuits to several ten thousand Josephson junctions, in comparison with their starting integration level of only a few thousand junctions. Actual targets are a 20 GHz dual processor module for the servers and a 0.96 Tbps switch module for the routers. Starting in April 2003, the Nb project was merged with SFQ circuit research using a high-T$_{c}$ superconductor (HTS). The HTS research targets are a wide-band AD converter for mobile-phone base stations and a sampling oscilloscope for wide-band waveform measurements.

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Simulation and Layout of Single Flux Quantum AND gate (단자속 양자 AND gate의 시뮬레이션과 Layout)

  • 정구락;박종혁;임해용;강준희;한택상
    • Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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    • 2002.02a
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    • pp.141-143
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    • 2002
  • We have simulated and Laid out a Single Flux Quantum(SFQ) AND gate for Arithmetic Logic Unit by using XIC, WRspice and Lmeter. This circuit is a combination of two D Flip-Flop. D Flip- Flop and dc SQUID are the similar shape from the fact that it has the a loop inductor and two Josephson junction. We also obtained operating margins and accomplished layout of the AND gate. We got the margin of $\pm$42% over.

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Microwave-Induced Negative-Differential Resistance Observed in Josephson Junction (마이크로파가 조셉슨 접합에서 유발하는 부의 미분저항)

  • Kim, Kyu-Tae;Koutovoi, Viatcheslav D.;Hong, Hyun-Kwon
    • 한국초전도학회:학술대회논문집
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    • v.9
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    • pp.237-237
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    • 1999
  • We have observed that a stable and reproducible Negative Differential Resistance(NDR) is induced by external microwave at low power in Nb/AlO$_x$/Al/Alo$_x$/Nb junctions. To study the erratic and pozzling NDR observations we have simulated Stewart-McCumber model in the region. Experimental results and simulation results will be presented with a discussion to draw a dynamic interpreration of the NDR.

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Fabrication Process of Single Flux Quantum ALU by using Nb Trilayer (Nb Trilayer를 사용한 단자속양자 논리연산자의 제작공정)

  • Kang, J.H.;Hong, H.S.;Kim, J.Y.;Jung, K.R.;Lim, H.R.;Park, J.H.;Hahn, T.S.
    • Progress in Superconductivity
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    • v.8 no.2
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    • pp.181-185
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    • 2007
  • For more than two decades Nb trilayer ($Nb/Al_2O_3/Nb$) process has been serving as the most stable fabrication process of the Josephson junction integrated circuits. Fast development of semiconductor fabrication technology has been possible with the recent advancement of the fabrication equipments. In this work, we took an advantage of advanced fabrication equipments in developing a superconducting Arithmetic Logic Unit (ALU) by using Nb trilayers. The ALU is a core element of a computer processor that performs arithmetic and logic operations on the operands in computer instruction words. We used DC magnetron sputtering technique for metal depositions and RF sputtering technique for $SiO_2$ depositions. Various dry etching techniques were used to define the Josephson junction areas and film pattering processes. Our Nb films were stress free and showed the $T{_c}'s$ of about 9 K. To enhance the step coverage of Nb films we used reverse bias powered DC magnetron sputtering technique. The fabricated 1-bit, 2-bit, and 4-bit ALU circuits were tested at a few kilo-hertz clock frequency as well as a few tens giga-hertz clock frequency, respectively. Our 1-bit ALU operated correctly at up to 40 GHz clock frequency, and the 4-bit ALU operated at up to 5 GHz clock frequency.

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Electrical Characteristics of $Nb/Al-AlO_x/Nb$ Tunnel Junction fabricated with $I_c$ Values in the Range of $28 A/cm^2~ 940 A/cm^2$ ($28 A/cm^2~ 940 A/cm^2$의 임계전류밀도 범위로 제작된 $Nb/Al-AlO_x/Nb$ 터널접합의 전기적 특성)

  • 홍현권;김규태;박세일;김구현;남두우
    • Progress in Superconductivity and Cryogenics
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    • v.4 no.1
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    • pp.4-7
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    • 2002
  • Samples of $Nb/Al-AlO_x/Nb$ tunnel junction with the size of $50 ${\mu}{\textrm}{m}$ {\times} 50 ${\mu}{\textrm}{m}$$ were fabricated by using self-aligning and reactive ion etching technique In the high quality samples, the $V_m$ value (the product of the critical current and subgap resistance measured at 2 mV) was 34 mV at the critical current density of $J_c: 500 A/cm^2 and the V_g$ value (the gap voltage) was 2.8 mV. For the higher $J_c$ sample, voltage fluctuation at the gap voltage was observed. The $V_m and J_c$ values for this sample were 8 mV and 900 A/cm$^2$, respectively. Also, the relationship between critical current density $J_c$ and specific normal conductance $G_s$ of the junctions with $J_c$ in the range of 28 A/cm$^2$~940 A/cm$^2$was investigated.