• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.12
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• pp.996-999
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• 2012

From UV irradiation, we achieved homeotropic liquid crystal alignment on blended photo-polymer layer which is composed of polyvinyl-cinnamate (PVCi) and homeotropic polyimide (PI). From vertical alignment (VA) mode, we measured threshold voltages by various PVCi doping concentration. Also, the rise time and fall time of VA cells were measured to verify the best doping concentration. Transmittance curves showed about 70% value between 380 nm and 780 nm wavelength which mean visible region.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1155-1158
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• 2004

Various inorganic alignment layers of nematic liquid crystal (NLC) molecules were investigated. Ar ion beam (IB) irradiation was utilized for alignment method and homogenous and homeotropic orientations with tilt angle were obtained on the suitable inorganic thin films. Proper doping materials were added to diamond-like carbon (DLC) films. In the case of homogeneous alignment, nitrogen doping affected the increase of pretilt angle, while the fluorine bonding in the DLC films was induced the tilted homeotropic alignment cause its extreme hydrophobic property. These results showed that ion beam irradiation method could be applied to the various alignment mode of NLC such as IPS, TN and MVA.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.5
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• pp.360-366
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• 2020

Focused electron beams with high energy acceleration are versatile probes. Focused electron beams can be used for high-resolution imaging and multi-mode nanofabrication, in combination with, molecular precursor delivery, in an electron microscopy environment. A high degree of control with atomic-to-microscale resolution, a focused electron beam allows for precise engineering of a graphene-based field-effect transistor (FET). In this study, the effect of electron irradiation on a graphene FET was systematically investigated. A separate evaluation of the electron beam induced transport properties at the graphene channel and the graphene-metal contacts was conducted. This provided on-demand strategies for tuning transfer characteristics of graphene FETs by focused electron beam irradiation.

• Proceedings of the Korean Society For Composite Materials Conference
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• 2005.11a
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• pp.75-78
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• 2005

Using a low-energy Ar+ ion-beam with and without reactive gases, polymers such as chemically stable poly(ether ether ketone) (PTFE) and poly(ether ether ketone) (PEEK) films were modified to have special surface features. The adhesion strength between the polymers and the copper was significantly improved because of both changes in the surface topography and chemical interactions due to polymer surface functionalization (oxidation and amination). The surface modification altered the failure mode from adhesive failure for the unmodified polymer/Cu interface to cohesive failure for the surface-modified polymer/Cu layer interface..

• Restorative Dentistry and Endodontics
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• v.26 no.5
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• pp.409-417
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• 2001

The purpose of this study was to investigate the influence of light irradiation over self-priming adhesive on dentin bonding. After acid etching the exposed dentin, a self-priming adhesive (Prime&Bond$^{\circledR}$NT dental adhesive system Dentsply DeTrey, GmbH, Konstanz, Germany) was applied and light irradiation was done for 20 sec with regular intensity (600 mW/$\textrm{cm}^2$) in group I and for 3 sec with ultra-high intensity (1930 mW/$\textrm{cm}^2$) in group III. No light irradiation was done over self-priming adhesive in groups II and IV. Composite resin was added on the self-priming adhesive and irradiated for 40 sec with regular intensity (600 mW/$\textrm{cm}^2$) in groups I and II and for 3 sec with ultra-high intensity (1930 mW/$\textrm{cm}^2$) in groups III and IV. To see the effect of light curing time on dentin bonding, another 3 group specimens were prepared. Without light-irradiation over self-priming adhesive, added composite resin was irradiated for 3, 6, or 12 sec with ultra-high intensity light. After bonded specimens were stored in 37$^{\circ}C$ distilled water for 24 hours, shear bond strength were measured using a universal testing machine (4202, Instron, Instron Co., U.S.A.) and fractured surfaces were examined under a stereomicroscope (SZ-PT Olympus, Japan). Statistical analysis were done with one-way, two-way ANOVA and chi-square test. The results were as follows : 1. The shear bond strengths from the groups irradiated over self-priming adhesive were significantly higher than those from the groups without irradiation (p<0.05). 2. There was no significant shear bond strength difference between regular intensity light irradiation groups and ultra-high intensity ones (p>0.05). 3. There was no significant shear bond strength difference among various irradiation time groups with ultra-high intensity ones (p>0.05). 4. In stereomicroscopic examination of fractured surfaces, adhesive-cohesive mixed failure mode was mostly seen in all groups, and there was no significant difference in failure mode among groups (p>0.05).

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.05a
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• pp.564-567
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• 2012

Optical fibers are going to be used for telecommunication, image fibers, sensors under irradiation in nuclear power plants and various irradiation facilities. Especially, Temperature detection sensors using Raman light scattering, temperature or strain sensors using fiber gratings, magnet-optical sensors using photo-magnetic effect, are already commercialized. However, When fibers are exposed to ionizing radiation, color centers are formed in fibers which reduces their light transmission, and it is limited in applying under radiation environments. In this study, $Co^{60}$ gamma-ray induced optical attenuation on Ge-doped single mode(SM) fiber has been measured. Gamma-ray is irradiated for 4hours at the dose rate of 0.5kGy/hr, 2kGy/hr, 8kGy/hr. Consequently, gamma-ray induced loss based on radiation effects in Ge-doped SM fiber occur precisely. Furthermore, dose rate effect that the higher dose rate in the same total dose, the more increase loss of optical fiber and annealing effect that the higher the loss after irradiation, the more increase the recovery rate of the loss are observed in the fiber. This results plan to make use of bases in the study of the radiation-hardened optical fiber.

• Journal of Environmental Science International
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• v.15 no.7
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• pp.669-676
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• 2006

PAHs are major pollutants that are widely distributed in soil and groundwater environment, so that may be regarded as carcinogens. We investigated the degradation kinetics of PAH in aqueous solution when low pressure UV energy and ultrasonic irradiation were applied. Phenanthrene and pyrene were used as model compounds. The degrees of degradation of these compounds with time were analyzed with a GC/MSD (SIM-mode). UV photolysis experiments showed that phenanthrene was reduced by 90 -67% at initial concentrations of 1 ppm to 8ppm whilst it decreased to 50% at 10 ppm. Under the same conditions pyrene was degraded up to about 75% at lower initial concentrations but the reduction efficiency dropped to a level of 34 to 29% at the higher concentrations above 8 ppm. The reaction orders for phenanthrene and pyrene were found to be zero-th and ca. -0.4th order, respectively, thus implying that the reported assumption of pseudo 1st order reaction for some PAHs would be no longer valid. PAH degradation was roughly proportional to the intensity of UV (number of lamps), exhibiting maximum 92.5% of the degradation efficiency. The solution pH was lowered to 4.4 from 6.4 during the experiments partially because the carbons decomposed by the energy reacted with oxygen radicals to produce carbon dioxides. Ultrasonic irradiation on phenanthrene solutions gave relatively poor results which matched to 50 to 70% of degradation efficiency even at 2 ppm of initial concentration. Phenanthrene was found to be degraded more efficiently than pyrene for the two energy sources. Ultrasound also followed the same reaction kinetics as UV energy on PAH degradation.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.65-65
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• 2000

Microwave response of intrinsic Josephson junctions in mesa structure formed on HgI2-intercalated Bi2Sr2CaCu2O8+x single crystals was studied in a wide range of microwave frequency. With irradiation of 73${\sim}$76 GHz microwave, the supercurrent branch becomes resistive above a certain onset microwave power. At low current bias, the current-voltage characteristics show linear behavior, while at high current bias, the resistive branch splits into multiple sub-branches. The voltage spacing between neighboring sub-branches increase with the microwave power and the total number of sub-branches is almost identical to the number of intrinsic Josephson junctions in the mesa. All the experimental results suggest that each sub-branch represents a specific mode of collective motion of Josephson vortices generated by the microwave irradiation. With irradiation of microwave of microwave of frequency lower than 20 GHz, on the other hand, no branch splitting was observed and the current-voltage characteristics exhibited complex behavior at hlgh blas currents. This result can be explained in terms of incoherent motion of Josephson vortices generated by non-uniform microwave irradiation.

• Journal of radiological science and technology
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• v.3 no.1
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• pp.95-105
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• 1980

In this paper, the author studied the histological changes of the midgut cells of fall webworms(Hyphantria cunea Drury) through 1.75-7 krad of the whole body gamma irradiation according to their metamorphosis by comparing the contol group with the irradiated one through an optical microscope. Here the results were as follows: 1. The epithelium of midgut was composed of columnar, goblet and regenerative cells. 2. The effects of gamma irradiation were varied with the dosages and the stages during the metamorphosis. 3. The degree of histological change mode by irradiation was increased with the dosages. 4. Radiosensitivity was the highest in both last-stage larva and 8-day-old pupae.

• Proceedings of the IEEK Conference
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• 2009.05a
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• pp.159-162
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• 2009

The necessity of radiation dosimeter with precise measurement of radiation dose is increased and required in the field of spacecraft, radiotheraphy hospital, atomic plant facility, etc. where radiation exists. Until now, a low power commercial metal-oxide semiconductor(MOS) transistor has been tested as a gamma radiation dosimeter. The measurement error between the actual value and the measurement one can occur since the MOSFET(MOS field-effect transistor) dosimeter, which is now being used, has two gates with same width. The measurement value of dosimeter depends on the variation of threshold voltage, which can be affected by the environment such as temperature. In this paper, a radiation dosimeter having a pair of MOSFET is designed in the same silicon substrate, in which each of the MOSFETs is operable in a bias mode and a test mode. It can measure the radiation dose by the difference between the threshold voltages regardless of the variation of temperature.