• Title/Summary/Keyword: ionic conductor

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Electrical Property Changes of $\textrm{NO}_X$ Sensitive $\textrm{WO}_3$ Thin Films as Applied DC Voltages on 8YSZ Substrate (8YSZ 기판에 증착한 $\textrm{WO}_3$ 박막의 DC 전압에 따른 $\textrm{NO}_X$ 감지특성)

  • 전춘배;박기철
    • Journal of the Korean Institute of Telematics and Electronics T
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    • v.36T no.1
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    • pp.8-12
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    • 1999
  • $\textrm{WO}_3$ semiconductive film, which is known to have a sensitivity on $\textrm{NO}_X$ gas was prepared on 8YSZ (8% Yttria stabilized $\textrm{ZrO}_2$) ionic conductor substrate that has oxygen ion pumping effect. Microstructure and electrical properity, especially $\textrm{NO}_X$ sensitivity as a function of DC voltage applied to 8YSZ substrate was examined. When the $\textrm{WO}_3$ film was annealed, it showed amorphous structure, while crystallization was occurred at $600^{\circ}$C revealing orthorhombic phase of $\textrm{WO}_3$. As the annealing temperature increases, (111) and (001) peaks of $\textrm{WO}_3$ film was enhanced. At $400^{\circ}C$ when DC voltage was applied, comparing with no DC bias, more stable and large response characteristics was showed, and the best sensitivity was observed at 2V. Recovery characteristics of NO gas was much better that that of $\textrm{NO}_2$ gas.

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Fabrication of Thin Solid Oxide Film Fuel Cells

  • Jee, Young-Seok;Chang, Ik-Whang;Son, Ji-Won;Lee, Jong-Ho;Kang, Sang-Kyun;Cha, Suk-Won
    • Journal of the Korean Ceramic Society
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    • v.47 no.1
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    • pp.82-85
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    • 2010
  • Recently, thin film processes for oxides and metal deposition, such as physical vapor deposition (PVD) and chemical vapor deposition (CVD), have been widely adapted to fabricate solid oxide fuel cells (SOFCs). In this paper, we presented two research area of the use of such techniques. Gadolinium doped ceria (GDC) showed high ionic conductivity and could guarantee operation at low temperature. But the electron conductivity at low oxygen partial pressure and the weak mechanical property have been significant problems. To solve these issues, we coated GDC electrolyte with a nano scale yittria-doped stabilized zirconium (YSZ) layer via atomic layer deposition (ALD). We expected that the thin YSZ layer could have functions of electron blocking and preventing ceria from the reduction atmosphere. Yittria-doped barium zirconium (BYZ) has several orders higher proton conductivity than oxide ion conductor as YSZ and also has relatively high chemical stability. The fabrication processes of BYZ is very sophisticated, especially the synthesis of thin-film BYZ. We discussed the detailed fabrication processes of BYZ as well as the deposition of electrode. This paper discusses possible cell structure and process flow to accommodate such films.

Surface Modification of a Li[Ni0.8Co0.15Al0.05]O2 Cathode using Li2SiO3 Solid Electrolyte

  • Park, Jin Seo;Park, Yong Joon
    • Journal of Electrochemical Science and Technology
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    • v.8 no.2
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    • pp.101-106
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    • 2017
  • $Li_2SiO_3$ was used as a coating material to improve the electrochemical performance of $Li[Ni_{0.8}Co_{0.15}Al_{0.05}]O_2$. $Li_2SiO_3$ is not only a stable oxide but also an ionic conductor and can, therefore, facilitate the movement of lithium ions at the cathode/electrolyte interface. The surface of the $Li_2SiO_3$-coated $Li[Ni_{0.8}Co_{0.15}Al_{0.05}]O_2$ was covered with island-type $Li_2SiO_3$ particles, and the coating process did not affect the structural integrity of the $Li[Ni_{0.8}Co_{0.15}Al_{0.05}]O_2$ powder. The $Li_2SiO_3$ coating improved the discharge capacity and rate capability; moreover, the $Li_2SiO_3$-coated electrodes showed reduced impedance values. The surface of the lithium-ion battery cathode is typically attacked by the HF-containing electrolyte, which forms an undesired surface layer that hinders the movement of lithium ions and electrons. However, the $Li_2SiO_3$ coating layer can prevent the undesired side reactions between the cathode surface and the electrolyte, thus enhancing the rate capability and discharge capacity. The thermal stability of $Li[Ni_{0.8}Co_{0.15}Al_{0.05}]O_2$ was also improved by the $Li_2SiO_3$ coating.

Analysis of the Phase Formation and the Sinterability of K+-β/β"-Al2O3 at High Temperatures (≥1600 ℃) (K+-β/β"-Al2O3의 고온 상관계와 소결성 분석)

  • Jang, Min-Ho;Kim, Seung-Gyun;Kim, Seok-Jun;Haw, Jung-Rim;Lim, Sung-Ki
    • Applied Chemistry for Engineering
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    • v.20 no.3
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    • pp.317-321
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    • 2009
  • In order to analyze the high temperature phase formation and the sinterability of super ionic conductor $K^+-{\beta}/{\beta}"-Al_2O_3$ which is commonly used as a solid oxide electrolyte, the pure $K^+-{\beta}/{\beta}"-Al_2O_3$ powder in the ternary system $K_2O-LiO_2-Al_2O_3$ was synthesized by solid state reaction and formed to tube and disk using slip casting method and cold isostatic pressing (CIP), respectively. The slip casting was conducted in an alumina mold with the slurry containing 40 wt% of solid contents and the CIP was carried out under 20 MPa. The samples were sintered at $1600^{\circ}C$, $1700^{\circ}C$ and $1750^{\circ}C$, respectively, and their phase formation and the sintering density were investigated according to the forming method. The samples produced by CIP showed far higher ${\beta}"-Al_2O_3$ fraction as compared with those by slip casting. On the other hand, the samples by slip casting showed slightly higher sintering density. The relative density reached to about 83% at $1750^{\circ}C$ and for 1 h, independent of the forming method. In the case of 90 min socking time, the density was decreased owing to the exaggerated grain growth and the pores by $K_2O$ evaporation.

Electrical Property of the Li2O-2SiO2 Glass Sintered by Spark Plasma Sintering (Spark Plasma Sintering으로 제조한 Li2O-2SiO2 유리 소결체의 전기적 특성)

  • Yoon, Hae-Won;Song, Chul-Ho;Yang, Yong-Seok;Yoon, Su-Jong
    • Korean Journal of Materials Research
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    • v.22 no.2
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    • pp.61-65
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    • 2012
  • A $Li_2O-2SiO_2$ ($LS_2$) glass was investigated as a lithium-ion conducting oxide glass, which is applicable to a fast ionic conductor even at low temperature due to its high mechanical strength and chemical stability. The $Li_2O-2SiO_2$ glass is likely to be broken into small pieces when quenched; thus, it is difficult to fabricate a specifically sized sample. The production of properly sized glass samples is necessary for device applications. In this study, we applied spark plasma sintering (SPS) to fabricate $LS_2$ glass samples which have a particular size as well as high transparency. The sintered samples, $15mm\phi{\times}2mmT$ in size, ($LS_2$-s) were produced by SPS between $480^{\circ}C$ and $500^{\circ}C$ at 45MPa for 3~5mim, after which the thermal and dielectric properties of the $LS_2$-s samples were compared with those of quenched glass ($LS_2$-q) samples. Thermal behavior, crystalline structure, and electrical conductivity of both samples were analyzed by differential scanning calorimetry (DSC), X-ray diffraction (XRD) and an impedance/gain-phase analyzer, respectively. The results showed that the $LS_2$-s had an amorphous structure, like the $LS_2$-q sample, and that both samples took on the lithium disilicate structure after the heat treatment at $800^{\circ}C$. We observed similar dielectric peaks in both of the samples between room temperature and $700^{\circ}C$. The DC activation energies of the $LS_2$-q and $LS_2$-s samples were $0.48{\pm}0.05eV$ and $0.66{\pm}0.04eV$, while the AC activation energies were $0.48{\pm}0.05eV$ and $0.68{\pm}0.04eV$, respectively.

Nanomaterials Research Using Quantum Beam Technology

  • Kishimoto, Naoki;Kitazawa, Hideaki;Takeda, Yoshihiko
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.10a
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    • pp.7-7
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    • 2011
  • Quantum beam technology has been expected to develop breakthroughs for nanotechnology during the third basic plan of science and technology (2006~2010). Recently, Green- or Life Innovations has taken over the national interests in the fourth basic science and technology plan (2011~2015). The NIMS (National Institute for Materials Science) has been conducting the corresponding mid-term research plans, as well as other national projects, such as nano-Green project (Global Research for Environment and Energy based on Nanomaterials science). In this lecture, the research trends in Japan and NIMS are firstly reviewed, and the typical achievements are highlighted over key nanotechnology fields. As one of the key nanotechnologies, the quantum beam research in NIMS focused on synchrotron radiation, neutron beams and ion/atom beams, having complementary attributes. The facilities used are SPring-8, nuclear reactor JRR-3, pulsed neutron source J-PARC and ion-laser-combined beams as well as excited atomic beams. Materials studied are typically fuel cell materials, superconducting/magnetic/multi-ferroic materials, quasicrystals, thermoelectric materials, precipitation-hardened steels, nanoparticle-dispersed materials. Here, we introduce a few topics of neutron scattering and ion beam nanofabrication. For neutron powder diffraction, the NIMS has developed multi-purpose pattern fitting software, post RIETAN2000. An ionic conductor, doped Pr2NiO4, which is a candidate for fuel-cell material, was analyzed by neutron powder diffraction with the software developed. The nuclear-density distribution derived revealed the two-dimensional network of the diffusion paths of oxygen ions at high temperatures. Using the high sensitivity of neutron beams for light elements, hydrogen states in a precipitation-strengthened steel were successfully evaluated. The small-angle neutron scattering (SANS) demonstrated the sensitive detection of hydrogen atoms trapped at the interfaces of nano-sized NbC. This result provides evidence for hydrogen embrittlement due to trapped hydrogen at precipitates. The ion beam technology can give novel functionality on a nano-scale and is targeting applications in plasmonics, ultra-fast optical communications, high-density recording and bio-patterning. The technologies developed are an ion-and-laser combined irradiation method for spatial control of nanoparticles, and a nano-masked ion irradiation method for patterning. Furthermore, we succeeded in implanting a wide-area nanopattern using nano-masks of anodic porous alumina. The patterning of ion implantation will be further applied for controlling protein adhesivity of biopolymers. It has thus been demonstrated that the quantum beam-based nanotechnology will lead the innovations both for nano-characterization and nano-fabrication.

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Review of Failure Mechanisms on the Semiconductor Devices under Electromagnetic Pulses (고출력전자기파에 의한 반도체부품의 고장메커니즘 고찰)

  • Kim, Dongshin;Koo, Yong-Sung;Kim, Ju-Hee;Kang, Soyeon;Oh, Wonwook;Chan, Sung-Il
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.18 no.6
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    • pp.37-43
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    • 2017
  • This review investigates the basic principle of physical interactions and failure mechanisms introduced in the materials and inner parts of semiconducting components under electromagnetic pulses (EMPs). The transfer process of EMPs at the semiconducting component level can be explained based on three layer structures (air, dielectric, and conductor layers). The theoretically absorbed energy can be predicted by the complex reflection coefficient. The main failure mechanisms of semiconductor components are also described based on the Joule heating energy generated by the coupling between materials and the applied EMPs. Breakdown of the P-N junction, burnout of the circuit pattern in the semiconductor chip, and damage to connecting wires between the lead frame and semiconducting chips can result from dielectric heating and eddy current loss due to electric and magnetic fields. To summarize, the EMPs transferred to the semiconductor components interact with the chip material in a semiconductor, and dipolar polarization and ionic conduction happen at the same time. Destruction of the P-N junction can result from excessive reverse voltage. Further EMP research at the semiconducting component level is needed to improve the reliability and susceptibility of electric and electronic systems.

Fabrication Ba0.5Sr0.5Co0.8Fe0.2O3−δ (BSCF)/Ce0.9Gd0.1O2−δ (GDC) and La0.6Ba0.4Co0.2Fe0.8O3−δ (LBCF)/Ce0.9Gd0.1O2−δ (GDC) Composite Cathodes for Intermediate Temperature Solid Oxide Fuel Cells (중저온 SOFC용 Ba0.5Sr0.5Co0.8Fe0.2O3−δ (BSCF)/Ce0.9Gd0.1O2−δ (GDC) 및 La0.6Ba0.4Co0.2Fe0.8O3−δ (LBCF)/Ce0.9Gd0.1O2−δ (GDC) 복합체 양극 제조)

  • Lee, Seung-Hun;Yoon, Song-Seol;Cha, Young-Chul;Lee, Jun;Hwang, Hae-Jin;Moon, Ji-Woong
    • Journal of the Korean Ceramic Society
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    • v.44 no.12
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    • pp.740-746
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    • 2007
  • The potential candidates for IT-SOFCs cathode materials, $Ba_{0.5}Sr_{0.5}Co_{0.8}Fe_{0.2}O_{3-{\delta}}$ (BSCF) and $La_{0.6}Ba_{0.4}Co_{0.2}Fe_{0.8}O_{3-{\delta}}$ (LBCF) powders, were synthesized by a EDTA-citrate combined method from $Sr(NO_3)_2$, $Ba(NO_3)_2$, $La(NO_3)_3{\cdot}6H_2O$, $Co(NO_3)_2{\cdot}6H_2O$, $Fe(NO_3)_3{\cdot}9H_2O$, citric acid and $EDTA-NH_3$. The cathode performance of symmetrical electrochemical cells consisting of BSCF-GDC or LBCF-GDC composite electrodes and a GDC electrolyte was investigated using by AC impedance spectroscopy at the temperature range of 500 to $700^{\circ}C$. It was found that a single phase perovskite could be successfully synthesized when the precursor is heated at $850^{\circ}C$ for 2 h. Due to thermal expansion mismatch between BSCF and GDC, the composite cathodes with lower GDC content than 45 wt% were peeled off from the GDC electrolyte and their electrode polarization resistance was estimated to be high. The thermal expansion coefficient of BSCF-GDC composites was decreased with increasing the GDC content and the electrode peeling off did not occur in BSCF-45 and 55 wt% GDC composites. BSCF-45 wt% GDC composite electrode showed the lowest area specific resistances (ASR) of 0.15 and $0.04{\Omega}{\cdot}cm^2$ at 600 and $700^{\circ}C$, respectively. On the other hand, LBCF-GDC composite cathodes showed higher ASR than the BSCF-45 and 55 wt% GDC and their cathode performance were decreased with the GDC content.

Study of Optimization and Characteristics of PSCF3737(Pr0.3Sr0.7Co0.3Fe0.7O3) for IT-SOFC (중저온형 SOFC를 위한 PSCF3737(Pr0.3Sr0.7Co0.3Fe0.7O3) 공기극 물질의 특성 및 최적화께 관한 연구)

  • Park, Kwang-Jin;Lee, Chang-Bo;Kim, Jung-Hyun;Baek, Seung-Wook;Bae, Joong-Myeon
    • Journal of the Korean Electrochemical Society
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    • v.10 no.3
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    • pp.207-212
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    • 2007
  • [ $PSCF3737(Pr_{0.3}Sr_{0.7}Co_{0.3}Fe_{0.7}O_3)$ ] is a good candidate cathode material for IT-SOFC(intermediate temperature solid oxide fuel cell) because of high MIEC(mixed ionic electronic conductor) conductivity. In this study, the characteristics of PSCF3737 was investigated and optimizations of sintering temperature and thickness for $PSCF3737(Pr_{0.3}Sr_{0.7}Co_{0.3}Fe_{0.7}O_3)$ was carried out. Impedance responses were divided into two parts by frequency region. Middle frequency part (${\sim}10^2\;Hz$) was concerned with oxygen reduction reaction on surface and low frequency part (${\sim}10^{-1}\;Hz$) was related with oxygen diffusion. The reasonable sintering temperature and thickness of cathode were $1200^{\circ}C$ and about $27\;{\mu}m$ with regard to EIS(electrochemical impedance spectroscopy). ASR(areas specific resistance) of optimized cathode is $0.115\;{\Omega}\;cm^2$ at $700^{\circ}C$.

Study of the Electrical Conductivity of the $({\alpha}-Nb_2O_5)_{1-x^-}(PbO)_x$ Solid Solution ($({\alpha}-Nb_2O_5)_{1-x^-}(PbO)_x$ 고용체의 전기전도도)

  • Roh, Kwon-Sun;Ryu, Kwang-Sun;Jun, Jong-Ho;Lee, Sung-Ju;Yo, Chul-Hyun
    • Journal of the Korean Chemical Society
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    • v.35 no.6
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    • pp.625-629
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    • 1991
  • The electrical conductivity of the Niobium Oxide-Lead Oxide systems containing 2.5, 5.0, 7.5, and 10.0 mol% of Lead Oxide has been measured in a temperature range 700${\sim}$$1100^{\circ}C$ under oxygen partial pressure of 2.0 ${\times}$ $10^{-1}$${\sim}$1.0 ${\times}$ $10^{-5}$ atm. The electrical conductivities of the system decreased with increasing PbO mol% and varied from $10^{-5}$ to $10^{-1}$ $ohm^{-1}$ $cm^{-1}$. The activation energy for conductivity was about 1.70 eV. The oxygen pressure dependence of electrical conductivity revealed that the system was a mixed conductor between ionic and electronic conductivities at high oxygen pressures and a n-type electronic conductivity with oxygen pressure dependence of -1/4 order at low oxygen pressures. The defect structure and electrical conduction mechanism of the system have been discussed with the data obtained.

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