• 한국윤활학회:학술대회논문집
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• 한국윤활학회 2004년도 학술대회지
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• pp.301-305
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• 2004

Effects of ion implantation on the adhesion strength of DLC film as a function of ion doses and implanted energies were investigated. Ti ions were implanted on the Si-wafer substrates followed by DLC coating using ion beam deposition method. Adhesion strength of DLC films were determined by scratch adhesion tester. Morphologies and compositional variations at the different ion energies and doses were observer by Laser Microscope and Auger Electron Spectroscopy, respectively. From results of scratch test, the adhesion strength of films was improved as increasing ion implanted energy, however there was no significant evidence with ion dose.

• 분석과학
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• 제7권4호
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• pp.527-540
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• 1994

본 연구는 질소이온 주입시킨 7050A1 합금의 표면 미세구조 변화에 대하여 살펴보았다. 이온 주입은 이온을 가속시켜서 물리적으로 모재의 표면에 주입시키는 표면처리의 한 방법으로서, 본 연구에서는 가속 에너지를 100KeV로 하고 전류밀도는 $23.1{\mu}A/cm^2$, 주입량은 $5{\times}10^{15}ions/cm^2$, $5{\times}10^{17}ions/cm^2$과, $8{\times}10^{17}ions/cm^2$로 질소이온을 주입하였다. 이온 주입층은 EPMA, AES, XPS, TEM 등으로 분석하였으며, 그 결과를 computer simulation을 통하여 비교하여 보았다. 질소이온 주입시킨 7050A1 합금은 극 표면에서부터 약 $4000{\AA}$ 사이에서 AlN이 Gaussian 분포를 지니고 있었으며, 일정 깊이에서 이온의 주입에 의해 충격을 받은 영역을 관찰할 수 있었고 이러한 표면의 변화들은 미소경도에 영향을 미치게 되어 저하중에서 경도값의 상승을 야기했다.

• 한국재료학회지
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• 제14권7호
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• pp.494-499
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• 2004

The structural, electrical and optical properties of GaN epilayers grown on various ion-implanted sapphire(0001) substrates by MOCVD were investigated. Sapphire substrates have been widely adopted to grow high quality GaN epilayer despite the large differences of lattice constant and thermal expansion coefficient between them. So, GaN or AlN buffer layer and pre-treatment was indispensably introduced before the GaN epilayer growth. The ion-implanted substrate's surface had decreased internal free energies during the growth of the ions implanted sapphire(0001) substrates. The crystal and optical properties of GaN epilayers grown in ions implanted sapphire(0001) substrate were improved. Also, excessively roughened and modified surface by ions degraded the GaN epilyers. Not only the ionic radius but also the chemical species of implanted sapphire(0001) substrates could improve the properties of GaN epilayers grown by MOCVD. This result implies that higher quality of GaN epilayers was achieved by using ion-implanted sapphire(0001) substrate with various ions.

• E2M - 전기 전자와 첨단 소재
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• 제8권4호
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• pp.426-433
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• 1995

Effect of boron in GaAs have been investigated by photo induced current transient spectroscopy(PICTS). The starting material was undoped liquid encapsulated Czochralski(LEC) semi insulating GaAs and boron ion implantation at 150keV energy was conducted with dose of 10$\^$12/ and 10$\^$13/ions/cm$\^$2/. In ion implanted samples, the peaks related arsenic vacancy(V$\_$As/) were decreased but complex lattice defect was increased with annealing temperature. U band was observed at ion implanted(10$\^$13/ ions/cm$\^$2/) and thermally treated(550.deg. C) sample. More negative peak was detected after annealing at temperature between 600 and 700.deg. C. The measurement of dark current showed that the formation of B$\_$GA/-V$\_$As/, complex defect and complex lattice defect by ion implantation were a reasonable explanation for the decrease in dark current.

• 한국산업보건학회지
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• 제33권4호
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• pp.439-446
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• 2023

Objectives: The aims of this study are to investigate how X-rays are emitted to surrounding parts during the ion implantation process, to analyze these emissions in relation to the properties of the ion implanter equipment, and to estimate the resulting exposure dose. Eight ion implanters equipped with high-voltage electrical systems were selected for this study. Methods: We monitored X-ray emissions at three locations outside of the ion implanters: the accelerator equipped with a high-voltage energy generator, the impurity ion source, and the beam line. We used a Personal Portable Dose Rate and Survey Meter to monitor real-time X-ray levels. The SX-2R probe, an X-ray Features probe designed for use with the Radiagem^TM meter, was also utilized to monitor lower ranges of X-ray emissions. The counts per second (CPS) measured by the meter were estimated and then converted to a radiation dose (𝜇Sv/hr) based on a validated calibration graph between CPS and μGy/hr. Results: X-rays from seven ion implanters were consistently detected in high-voltage accelerator gaps, regardless of their proximity. X-rays specifically emanated from three ion implanters situated in the ion box gap and were also found in the beam lines of two ion implanters. The intensity of these X-rays did not show a clear pattern relative to the devices' age and electric properties, and notably, it decreased as the distance from the device increased. Conclusions: In conclusion, every gap, in which three components of the ion implanter devices were divided, was found to be insufficiently shielded against X-ray emissions, even though the exposure levels were not estimated to be higher than the threshold.

• 한국표면공학회지
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• 제31권2호
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• pp.73-80
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• 1998

The aim of this study is to develop sintered stainless steels (SSS) with good mechanical strength, wear resistance, and corrosion resistance by nitrogen ion implantation on the Culated SSS surface. Stainless steel compacts containg Cu (2-10 wt%) were prepared by electroless Cu-pating method which results in the increased3 homogenization in alloying powder. Nitrogen ion implantation was carried out by using N2 gas as the ion source. Nitrogen ions were embedded by an acceleratol of 130keV with doese $3.0\times10^{17}\;ions/\textrm{cm}^2$ on the SSS at $25^{\circ}C$ in$2\times10^{-6}$ torr vacuum. The nitrogen ion implanted SSS obtained from anodic ploarization curves revealed higher corrosion potential than that of nitrogen ion unimplante one. And nitrogen ion implanted 316LSSS had good resistance to pitting corrosion due to the synergistic effect of Mo and N, and the inhibition of $NH_4\;^+$<\TEX>, against $CI^-$<\TEX>.

• 대한전자공학회논문지
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• 제24권6호
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• pp.969-974
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• 1987

High value sheet resistance (Rs, 350 \ulcorner/ -80 K \ulcorner/ ) borom implanted polysilicon resistors were fabricated under process condition compatible with bipolar integrated circuits fabrication. This paper includes the effect of contact ion implantation on Rs and the effect of electron gun(e-gun) deosition vs. non e-gun evaporated metal contacts on the Rs. From results, we observed that the contact ion implanted samples showed higher Rs value than those without contact ion implantation. Also, it was shown that there is noticeable amount of Rs degradation for e-gun samples, while sputtered samples expressed little Rs degradation after PtSi was formed.

• 한국세라믹학회지
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• 제34권8호
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• pp.834-842
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• 1997

Controlled Ca impurity implanted inner crack-like pore in the high purity alumina single crystal, sapphire, had been created by micro-fabrication technique, which includes ion implantation, photo-lithography, Ar ion milling, and hot press technique. The morphological change and the healing of cracklike pore in Ca doped high purity single crystal alumina, sapphire, during high temperature heat treatment in vacuum were observed using optical microscopy. The dot-like surface roughening was developed and hexagon like crystal appeared on inner surface of crack-like pore after heat treatment. Bar type crystals, probably CaO.6Al2O3, were observed on the inner surface after 1 hour heat treatment at 1, 50$0^{\circ}C$, but this bar type crystal disappeared after 1 hour heat treatment at 1, $600^{\circ}C$. This disappearance means that there should be a little increase of Ca solubility limit to alumina at this temperatures.

• 방사선산업학회지
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• 제5권3호
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• pp.243-247
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• 2011

In this study, a convenient method for the selective immobilization of single strand DNA (ssDNA) on a polymer surface was described. A positively charged polyelectrolyte, poly(diallyldimethylammonium chloride) (PDDA), was spin-coated on a tissue culture petridish and the micropatterns of the PDDA were formed by selective ion implantation through a pattern mask. The surface property of the implanted PDDA was investigated by using a surface profiler and FT-IR spectrometer. Cy3-labeled ssDNA was selectively immobilized on the PDDA patterns through ionic interaction and thus, well-defined ssDNA patterns were obtained.

• Current Optics and Photonics
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• 제3권2호
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• pp.172-176
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• 2019

The work reports on the fabrication of an optical planar waveguide in the Nd:CNGG crystal by the 0.4-MeV hydrogen ion implantation with a fluence of $8.0{\times}10^{16}ions/cm^2$. The nuclear energy loss of the implanted hydrogen ions was derived by using SRIM 2013 code. The microscope image of the proton-implanted Nd:CNGG crystal cross section was captured by a metallographic microscope. The transmittance spectra were recorded before and after the ion implantation. The light intensity distribution of the planar waveguide at 632.8 nm was experimentally measured to validate its effect on one dimension confinement. The investigation shows that the proton-implanted Nd:CNGG waveguide is a candidate for an optoelectronic integrated device.