• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.2
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• pp.95-100
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• 2006

The GaAs-on-insulator (GOI) wafer fabrication technique has been developed by using ion-cut process, based on hydrogen ion implantation and wafer direct bonding techniques. The hydrogen ion implantation condition for the ion-cut process in GaAs and the associated implantation mechanism have been investigated in this paper. Depth distribution of hydrogen atoms and the corresponding lattice disorder in (100) GaAs wafers produced by 40 keV hydrogen ion implantation were studied by SIMS and RBS/channeling analysis, respectively. In addition, the formation of platelets in the as-implanted GaAs and their microscopic evolution with annealing in the damaged layer was also studied by cross-sectional TEM analysis. The influence of the ion fluence, the implantation temperature and subsequent annealing on blistering and/or flaking was studied, and the optimum conditions for achieving blistering/splitting only after post-implantation annealing were determined. It was found that the new optimum implant temperature window for the GaAs ion-cut lie in $120{\sim}160^{\circ}C$, which is markedly lower than the previously reported window probably due to the inaccuracy in temperature measurement in most of the other implanters.

• Journal of the Korean Vacuum Society
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• v.13 no.1
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• pp.1-8
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• 2004

The SOI wafer fabrication technique has been developed by using ion-cut process, based on proton implantation and wafer bonding techniques. It has been shown by TRIM simulation that 65 keV proton implantation is required for the standard SOI wafer (200 nm SOI, 400 nm BOX) fabrication. In order to investigate the optimum proton dose and primary annealing condition for wafer splitting, the surface morphologic change has been observed such as blistering and flaking. As a result, effective dose is found to be in the 6∼$9\times10^{16}$ $H^{+}/\textrm{cm}^2$ range, and the annealing at $550^{\circ}C$ for 30 minutes is expected to be optimum for wafer splitting. The depth distribution of implanted hydrogen has been experimentally confirmed by ERD and SIMS measurements. The microstructure evolution in the damaged layer was also studied by X-TEM analysis.

• Journal of the Semiconductor & Display Technology
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• v.17 no.3
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• pp.46-52
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• 2018

Slitting, which is supposed to be one of the most critical processes in Li-Ion battery manufacturing, is supposed to cut off the uncoated parts of the foil, and cut the wide foils into the size of the Li-ion batteries. Vibrations of slitting machines are the most critical factors for uneven cut surface such as surface roughness and burr, which are the main reasons of the tearing of microporous membranes to separate the cathodes and the anodes, and eventually causing explosion of the batteries. In this study, the structure of a slitting machine has been analyzed through computer simulations to figure out the main reasons of the vibrations. The result of the study shows that simple design alterations of the supporting area and roller without modifying the main structure of the machine can suppress the vibrations effectively, and further to prevent the devastating explosion.

• Journal of the Korean Vacuum Society
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• v.14 no.2
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• pp.91-96
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• 2005

The silicon-on-insulator (SOI) wafer fabrication technique has been developed by using ion-cut process, based on proton implantation and wafer bonding techniques. It has been shown by SRIM simulation that 65keV proton implantation is required for a SOI wafer (200nm SOI, 400nm BOX) fabrication. In order to investigate the optimum proton dose and primary annealing condition for wafer splitting, the surface morphologic change has been observed such as blistering and flaking. As a result, effective dose is found to be in the $6\~9\times10^{16}\;H^+/cm^2$ range, and the annealing at $550^{\circ}C$ for 30 minutes is expected to be optimum for wafer splitting. Direct wafer bonding is performed by joining two wafers together after creating hydrophilic surfaces by a modified RCA cleaning, and IR inspection is followed to ensure a void free bonding. The wafer splitting was accomplished by annealing at the predetermined optimum condition, and high temperature annealing was then performed at $1,100^{\circ}C$ for 60 minutes to stabilize the bonding interface. TEM observation revealed no detectable defect at the SOI structure, and the interface trap charge density at the upper interface of the BOX was measured to be low enough to keep 'thermal' quality.

• Korean Journal of Food Science and Technology
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• v.49 no.6
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• pp.591-598
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• 2017

This study aimed to evaluate the measurement uncertainty for the quantitative determination of chlorite and chlorate in ready-to-eat fresh-cut vegetables using ion chromatography with a hydroxide-selective column. One gram of the homogenized sample in deionized water was sonicated and centrifuged at 8,500 rpm. The supernatant was purified by passing it through a Sep-Pak tC18 cartridge, followed by chromatographic determination using a Dionex IonPac AS27 column. The linearity of the calibration curves, recovery, repeatability, and reproducibility of the method were satisfactory. The method detection limit was estimated to be approximately 0.5 mg/kg. Each uncertainty component was evaluated separately, and the combined and expanded uncertainty values were calculated at the 95% confidence level. The measured concentrations for 3 mg/kg of chlorite and chlorate standard materials were $3.18{\pm}0.32$ and $3.10{\pm}0.42mg/kg$, respectively. These results confirmed the reliability of the developed method for measuring the two chlorine-based oxyanions in fresh-cut vegetables.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.129.1-129
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• 2000

• Journal of the Korean Ceramic Society
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• v.38 no.5
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• pp.424-430
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• 2001

Cut-off 전압 변화에 따른 충방전 특성을 알아보기 위하여 Mn을 다른 전이 금속이 Co와 Ni로 소량 치환시킨 Li(M $n_{1-{\delta}}$ $n_{\delta}$)$_2$ $O_4$(M=Ni, Co, $\delta$=0, 0.05, 0.1, 0.2)를 고상 반응법으로 80$0^{\circ}C$에서 48시간 동안 유지하여 합성하였다. 충방전의 cut-off 전압은 2.5~4.4V, 3.0~4.5V, 3.5~4.5V, 3.5V~4.7V의 네 가지 전압범위고 하였다. 충방전 실험결과, Li(M $n_{1-{\delta}}$ $n_{\delta}$)$_2$ $O_4$의 용량은 각각 Co와 Ni의 $\delta$=0.1에서 최대를 보였다. Co 치환 조성 재료와 순물질 모두에서 최대의 용량을 보인 cut-off 전압대는 3.5~4.5V 이었는데 이때의 Li(M $n_{0.9}$ $Co_{0.1}$)$_2$ $O_4$와 LiM $n_2$ $O_4$의 초기 충전용량과 초기 방전용량은 각각 118, 119mAh/g과 114, 104mAh/g 이었다. 또한 모든 cut-off 전압대에서 Li(M $n_{0.9}$ $Co_{0.1}$)$_2$ $O_4$는 순수한 LiM $n_2$ $O_4$보다 더 높은 용량과 우수한 싸이클 성능을 보였으며 그 결과는 밀착형 전지구성에서도 일치하였다.하였다.

• Analytical Science and Technology
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• v.15 no.1
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• pp.7-14
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• 2002

Laser ablation ion trap mass spectrometry (LAITMS) was developed for the analysis of metal and ceramic samples. For this study, XeCl excimer laser (308 nm) was used for ablating the samples and ITMS was used as a detector. Samples were introduced from outside of a ring electrode and this way of sample introduction was very effective for solid samples when laser ablation was employed. Helium gas was used as a buffer gas, and its effect on sensitivity and some parameters (buffer gas pressure, ion storage time, and cut-off RF voltage) were studied. The optimized conditions were $1{\times}10^{-4}$ Torr of buffer gas pressure, 100 ms of ion storage time and $1150V_{p-p}$ of cut-off RF voltage. From that results, copper (Cu) and molybdenum (Mo) metals were tested with LAITMS and the mass spectra of these pure metals were compared with the natural abundance of isotope ratio. We also examined ceramic samples ($Al_2O_3$, $ZrO_2$) and represented the result of elemental analysis.

• Journal of the Korean Society of Environmental Restoration Technology
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• v.9 no.6
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• pp.133-142
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• 2006

Occasionlly, a lot of plants withered on the marine upheaval soil, because of the potential acid sulfate soil. It was necessary to investigate the chemistry of soil, before planting on Ulsan-Jungjadong cut-slope of road construction site. Cut-slope surface soils were sampled on the every varying points in soil colour and analyzed chemically. Germination status of seeds in sample soils was investigated such as Albizzia julibrissin, Festuca arundinacea. Relationship between germination status and chemistry of soil was analyzed. The results of investigation and analysis are as follows. 1. Germination of seeds was inhibited, less than pH($H_2O$ 1 : 5) 2.63. 2. Germination of seeds was inhibited, more than EC($H_2O_2$ 1 : 5) 13.4mS. 3. Germination of seeds was inhibited, more than aluminum ion content 2.0ppm in soil solution extracted by A$H_2O$ and 6.2ppm by $H_2O_2$. 4. pH($H_2O$ 1 : 5), EC($H_2O_2$ 1 : 5) and aluminum ion content proved chemical indicators of seed germination inhibition, in case of potential acid sulfate soil.

• Proceedings of the Korean Vacuum Society Conference
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• 2003.08a
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• pp.118-118
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• 2003