• Title/Summary/Keyword: ion profile

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A study on boron and phosphrous doping profile by RTA using 1MeV high energy ion implantaiton (1MeV 고에너지로 붕소(boron)와 인(phosphorus)을 이온주입 시급속 열처리에 따른 도핑 프로파일)

  • 강희원;전현성;노병규;조소행;김종규;김종순;오환술
    • Proceedings of the IEEK Conference
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    • 1998.06a
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    • pp.331-334
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    • 1998
  • p형 실리콘 기판위에 100.angs.의 초기 산화막을 성장시킨 후 붕소(B)와 인(P)을 1MeV 이온주입 에너지로 4.dec. tilting하여 붕소의 도즈량은 1*10/녀ㅔ 13/[cm/sup -2/]까지, 인은 1*10/sup 13/[cm/sup -2]로부터 1*10/sup 14/[cm/sup -2/] 까지 변화시키며 이온 주입하였다. 이온주입 후 RTA 로서 열처리 하였으며, 열처리 시간은 10초에서 40초까지,열처리 온도를 1000.deg.C에서 1100.deg.C까지 변화하였다. 이후 기파낸의 불순물의 프로파일 및 미세 결함의 분포를 분석하기 위하여, SIMS, SRP, XTEM 분석을 실시하였고, 이를 monte-carlo 모ㅓ델로서 시뮬레이션하여 비교하였다. SIMS 분석 결과 열처리 온도와 시간이 증가할수록 접합깊이가 증가하였고, 프로파일이 넓어짐을 볼수 있다. SRP 측정에서 붕소는 주해거리 (Rp)값은 1.8.mu.m~1.9.mu.m, 인의 경우는 1.1.mu.m~1.2.mu.m의 주행거리 (Rp) 값이 나타났다. XTEM 분석결과 붕소의 경우 열처리에 전후에도 결함을 볼수 없었고, 인의 경우 열처리 이후에 실리콘 결정내부에 있던 산소(O)와 인(P)우너자의 pinning효과에 의해 전위다이폴을 형성하여 표면근처로 성장함을 볼수 있었다.

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Thermal Stability Enhancement of Nickel Monosilicides by Addition of Iridium (이리듐 첨가에 의한 니켈모노실리사이드의 고온 안정화)

  • Yoon, Ki-Jeong;Song, Oh-Sung
    • Korean Journal of Materials Research
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    • v.16 no.9
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    • pp.571-577
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    • 2006
  • We fabricated thermal evaporated 10 nm-Ni/(poly)Si and 10 nm-Ni/1 nm-Ir/(poly)Si films to investigate the thermal stability of nickel monosilicide at the elevated temperatures by rapid annealing them at the temperatures of $300{\sim}1200^{\circ}C$ for 40 seconds. Silicides for salicide process was formed on top of both the single crystal silicon actives and the polycrystalline silicon gates. A four-point tester is used for sheet resistance. Scanning electron microscope and field ion beam were employed for thickness and microstructure evolution characterization. An x-ray diffractometer and an auger depth profile scope were used for phase and composition analysis, respectively. Nickel silicides with iridium on single crystal silicon actives and polycrystalline silicon gates showed low resistance up to $1200^{\circ}C$ and $800^{\circ}C$, respectively, while the conventional nickel monosilicide showed low resistance below $700^{\circ}C$. The grain boundary diffusion and agglomeration of silicides led to lower the NiSi stable temperature with polycrystalline silicon substrates. Our result implies that our newly proposed Ir added NiSi process may widen the thermal process window for nano CMOS process.

Effect of the fixed oxide charge on the metal-oxide-silicon-on-insulator structures (metal-oxide-silicon-on-insulator 구조에서 고정 산화막 전하가 미치는 영향)

  • Jo, Yeong-Deuk;Kim, Ji-Hong;Cho, Dae-Hyung;Moon, Byung-Moo;Koh, Jung-Hyuk;Ha, Jae-Geun;Koo, Sang-Mo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.83-83
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    • 2008
  • Metal-oxide-silicon-on-insulator (MOSOI) structures were fabricated to study the effect caused by reactive ion etching (RIE) and sacrificial oxidation process on silicon-on-insulator (SOI) layer. The MOSOI capacitors with an etch-damaged SOI layer were characterized by capacitance-voltage (C-V) measurements and compared to the sacrificial oxidation treated samples and the reference samples without etching treatment. The measured C-V curves were compared to the numerical results from 2-dimensional (2-D) simulations. The measurements revealed that the profile of C-V curves significantly changes depending on the SOI surface condition of the MOSOI capacitors. The shift in the measured C-V curves, due to the difference of the fixed oxide charge ($Q_f$), together with the numerical simulation analysis and atomic force microscopy (AFM) analysis, allowed extracting the fixed oxide charges ($Q_f$) in the structures as well as 2-D carrier distribution profiles.

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A Experimental Study of Cup forming by Stretch-Drawing Process (인장드로잉법에 의한 원통성형에 관한 실험적 연구)

  • 김영수
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 2000.04a
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    • pp.123-128
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    • 2000
  • Fundamental and informative data of axi-symmetric stretch-drawing of several sheetmetals with thicknesses of 0.7-1.0mm are presented both for single and double operations. Very small radius is applied to the die profile (or-shoulder) ion all operations. to induce wall-thinning by the effect of bending-under-tension from which the name 'stretch-drawing' comes. It is clearly demonstrated that deeper cups could be formed by single and double stretch-drawings from smaller circular blanks due to such wall-thinning action than in the usual deep-drawing of larger blanks, From this fact it is emphasized that the deep-drawability of a sheet metal is not evaluated simply by the conventional L.D.R (limiting drawing ratio) but the depth of the drawn cup should also be taken into account./ Many experimental data about various metals and thicknesses given in this paper offer a valuable information in this process for more general use which recommends to replace the conventional deep-drawing process by the stretch-drawing process both for single and double operations. In the single stretch-drawing it is also confirmed that a deeper cup can be produced by raising the blank-holding force at later stage of operation.

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A Study on the Etching Characateristics of TiW Films using BCl$_3$/SF6/ gas chemistries (BCl$_3$/SF6 gas chemistries에 의한 TiW막의 식각특성 연구)

  • 권광호;김창일;윤선진;김상기;백규하;남기수
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.34D no.3
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    • pp.1-8
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    • 1997
  • The surface properties after plasma etching of TiW alloy using the chemistries of BCl$_{3}$ and SF$_{6}$ gases with varying mixing ratio have been investigated using XPS(X-ray photoelectron spectrocopy). The elements existed on the etched sampled have been extracted with BCL$_{3}$/SF$_{6}$ ratio and their chemical binding states have also been analysed. It was confirmed that the thickness of native oxide formed on the TiW films is thinner than 10nm by using Ar sputtering. At the same time, the roughness of etched surface has been esamnied using AFM (atomic force microscopy). on the basis of the basis of this results, the relations between the caanges of oxygen contents detected by XPS and the rouhness of etched surface have been discussed. And the etch rate and etched profile of Tiw films have been examined and the changes of the etch rate and etched prfile have been discussed with XPS results. From XPS results, the role of passivation layer consisted of Ti-S compound with XPS results. From XPS results, the role of passivation layer consisted of Ti-S compound has been proposed. Ti-S compound seems to make a role of passivation layer that surpresses Ti-O formation.ion.

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Solid Phase Extraction of Phospholipids from Brazil Nut (Bertholletia excelsa) and Their Characterization by Mass Spectrometry Analysis

  • Lima, Bruna R. De;Silva, Felipe M.A. Da;Koolen, Hector H.F.;Almeida, Richardson A. De;Souza, Afonso D.L. De
    • Mass Spectrometry Letters
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    • v.5 no.4
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    • pp.115-119
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    • 2014
  • The Brazil nut (Bertholletia excelsa - Lecythidaceae) is considered a product with high economic value, being a food widely appreciated for its nutritional qualities. Although previous studies have reported the biochemical composition of Brazil nut oil, the knowledge regarding the phospholipid composition exhibits a disagreement: the composition of fatty acids present in the structures of phospholipids is reported as being different from the composition of the free fatty acids present in the oil. In this work, solid phase extraction (SPE) was employed to provide a fast extraction of the phospholipids from Brazil nuts, in order to compare the phospholipid profile of the in nature nuts and their fatty acids precursor present in the oil. The major phospholipids were characterized by mass spectrometry approach. Their fragmentation pattern through direct infusion electrospray ionization ion-trap tandem mass spectrometry ($ESI-IT-MS^2$) proved to be useful to unequivocal characterization of these substances. High resolution (HR) experiments through ESI using a quadruple time of flight mass spectrometry (QTOF) system were performed to reinforce the identifications.

Parabolic mirror test using Computer Generated Hologram (Computer Generated Hologram을 이용한 포물명경 형상측정)

  • 김성하;곽종훈;최옥신;송재봉;이윤우;이인원
    • Korean Journal of Optics and Photonics
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    • v.11 no.2
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    • pp.80-84
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    • 2000
  • Parabolic almninium mlITOr of m.5('||'&'||'cent; 50 nun) was fabncated by a diamond tummg machine. Computer generated hologram (CGH) for the test of parabolic mirror was encoded by binary phase hologram Approximation of curved fringe to line was made by staircase encoding. After fringe data 1ransformed mto a Post Scnpt file. magnified master CGH was printed by a laser printer, and then it reduced to the photographIc film. Parabolic mirror was tested by Twyman-Green interferometer with CGH at VIewing arm. Its experimental result was compared with those of surface profile and auto-collimatIon test, and then the errors were analyzed.

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Conversion from SIMS depth profiling to compositional depth profiling of multi-layer films

  • Jang, Jong-Shik;Hwang, Hye-Hyen;Kang, Hee-Jae;Kim, Kyung-Joong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.347-347
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    • 2011
  • Secondary ion mass spectrometry (SIMS) was fascinated by a quantitative analysis and a depth profiling and it was convinced of a in-depth analysis of multi-layer films. Precision determination of the interfaces of multi-layer films is important for conversion from the original SIMS depth profiling to the compositional depth profiling and the investigation of structure of multi-layer films. However, the determining of the interface between two kinds of species of the SIMS depth profile is distorted from original structure by the several effects due to sputtering with energetic ions. In this study, the feasibility of 50 atomic % definition for the determination of interface between two kinds of species in SIMS depth profiling of multilayer films was investigated by Si/Ge and Ti/Si multi-layer films. The original SIMS depth profiles were converted into compositional depth profiles by the relative sensitivity factors from Si-Ge and Si-Ti alloy reference films. The atomic compositions of Si-Ge and Si-Ti alloy films determined by Rutherford backscattering spectroscopy (RBS).

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Weathering of coal and kerogen : implications on the geochmical carbon and oxygen cycle and the environmental geochemical reactions (탄질 유기물과 케로젠의 풍화 : 탄소와 산소의 지화학적 순환 및 환경화학적 반응에 미치는 영향)

  • 장수범
    • Economic and Environmental Geology
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    • v.32 no.1
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    • pp.101-111
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    • 1999
  • Sedimentary organic matter, exposed to continental surficial environment, reacts with oxygen supplied from the atmosphee and forms carbon-containing oxidation products. Knowledge of the rate and mechanisms of sedimentary organic matter weathering is important because it is one of the major controls on atmospheric oxygen level through geologic time. Under the abiological conditions, the oxidation rate of coal organic matter by molecular oxygen is enhanced by the increase of oxygen concentration and temperature. At ambient temperature and pressure, aqueous coal oxidation results in the formation of dissolved $CO_2$ dissolved organic carbon and solid oxidation products which are all quantitatively significant reaction products. The effects of pH, ultraviolet light, and microbial activity on the weathering of sedimentary organic matter are poorly contrained. Based on the results of geochmical and environmental studies, it is believed that the photochemical reaction should play an important role in the decomposition and oxidation of sedimentary organic matter removed from the weathering profile. At higher pH conditions, the production rate of DOC can be accelerated due to base catalysis. These high molecular weight oranic matter can react with man-made pollutants such as heavy metal ions via adsorption/desorption or ion exchange reactions. The effect of microbial activity on the oxidative weathering of sedimentary organic matter is poorly understood and remains to be studied.

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Characterization of Polyphenoloxidase extracted from Solanum tuberosum Jasim

  • Jang, Jae-Won;Ma, Yu-Hyun;Shin, Ju-Mi;Song, Kyung-Bin
    • Food Science and Biotechnology
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    • v.14 no.1
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    • pp.117-122
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    • 2005
  • Polyphenoloxidase (PPO) was extracted from Solanum tuberosum Jasim by various chromatographic methods and was subsequently purified and characterized. PPO was purified upto 78-fold from the crude extract. SDS-PAGE profile of the enzyme showed a major subunit of PPO with molecular weight of 40 kDa. The optimum pH and temperature for the maximum activity of PPO was 6.5 and $25^{\circ}C$, respectively. The enzyme was found to be quite stable between 10 and $40^{\circ}C$, whereas it was almost inactivated at $70^{\circ}C$ when incubated for 30 min. Substrate specificity study indicated that catechol was the most suitable substrate for PPO isolated from purple-fleshed potato with a $K_m$ value of 21.1 mM. The most effective inhibitor was ascorbic acid, followed by L-cysteine, citric acid, EDTA, and boric acid. Studies on the effect of metal ion on PPO activity showed that magnesium and copper were inhibitory, while iron and zinc ions increased the activity of PPO.