• Korean Journal of Materials Research
• /
• v.31 no.3
• /
• pp.162-171
• /
• 2021

Dry etching of copper thin films is performed using high density plasma of ethylenediamine (EDA)/hexafluoroisopropanol (HFIP)/Ar gas mixture. The etch rates, etch selectivities and etch profiles of the copper thin films are improved by adding HFIP to EDA/Ar gas. As the EDA/HFIP concentration in EDA/HFIP/Ar increases, the etch rate of copper thin films decreases, whereas the etch profile is improved. In the EDA/HFIP/Ar gas mixture, the optimal ratio of EDA to HFIP is investigated. In addition, the etch parameters including ICP source power, dc-bias voltage, process pressure are varied to examine the etch characteristics. Optical emission spectroscopy results show that among all species, [CH], [CN] and [H] are the main species in the EDA/HFIP/Ar plasma. The X-ray photoelectron spectroscopy results indicate the formation of CuCN compound and C-N-H-containing polymers during the etching process, leading to a good etch profile. Finally, anisotropic etch profiles of the copper thin films patterned with 150 nm scale are obtained in EDA/HFIP/Ar gas mixture.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2005.06a
• /
• pp.1518-1521
• /
• 2005

The application of focused ion beam (FIB) technology in micro/nano machining has become increasingly popular. Its usage in micro/nano machining has advantages over contemporary photolithography or other micro/nano machining technologies such as small feature resolution, the ability to process without masks and being accommodating for a variety of materials and geometries This paper focus to apply the sputtering technology accumulated by experiments to 3d structure fabrication with high resolution. Therefore some verifications and discussions of the characteristics of FIB sputtering results according to focal length were described in this paper. And we suggested the definition of rectangular pattern profile and made the verifications of sputtering results based on definition of it.

• Journal of the Speleological Society of Korea
• /
• no.82
• /
• pp.1-4
• /
• 2007

In this paper, the etching of Au films using photoresist masks on Si substrates was investigated using a capacitively coupled plasma etch reactor. The advantages of plasma etch techniques over current methods for Au metalization include the ability to simplify the metalization process flow with respect to resist lift-off schemes, and the ability to cleanly remove etched material without sidewall redeposition, as is seen in ion milling. The etch properties were measured for different gas mixing ratios of CF4/Ar, and chamber pressures while the other conditions were fixed. According to statistical design of experiment (DOE), etching process of Au films was characterized and also 20 samples were fabricated followed by measuring etch rate, selectivity and etch profile. There is a chemical reaction between CF4 and Au. Au- F is hard to remove from the surface because of its high melting point. The etching products can be sputtered by Ar ion bombardment.

• Proceedings of the KIPE Conference
• /
• 2017.11a
• /
• pp.47-48
• /
• 2017

This paper presents a low-cost portable lithium battery parameter measuring and estimating the solution. In this method, lithium battery characteristics are monitored during discharging and charging cycles. The battery profile is analyzed, and its key parameters are estimated by GNU Octave running on Raspberry Pi Zero, a mini computer. The proposed method can measure and estimate the battery parameters for SOC and DOD estimation with reasonable accuracy as well as portability features.

• Proceedings of the KIEE Conference
• /
• 2008.10a
• /
• pp.183-183
• /
• 2008

This paper presents the time responses of calcium ($Ca^{2+}$) ion concentration of MG-63 cells induced by a constant shear stress in micro channel were observed in the real time. Most of cells have similar rising time. There were some time delays because of the initial position of the cell in the micro channel along the pressure-driven fluid flow. The concentration of $Ca^{2+}$ exponentially decreased while time constant of each profile did not have any relation to the peak value of concentration.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1999.07a
• /
• pp.178-178
• /
• 1999

Low temperature Si epitaxy can provide flexibility for a device designer to tailor or optimize the device performance. It is better method for controlling the doping thickness, concentration and profile than ion implantation and diffusion. But there is a limited growth thickness in this method. At a given temperature, the film grows epitaxially for a certain limiting thickness(hepi) and becomes amorphous. The transition from crystalline Si to amorphous Si is abrupt. In this study, Si film was deposited by ion beam sputter deposition on Si (0001) above a limiting thickness and measure the strain in the interface between crystalline Si and amorphous Si. The strain was compressive and the maximum value was about 2%.

• Proceedings of the KACD Conference
• /
• 2001.11a
• /
• pp.567.2-567
• /
• 2001

The purpose of this study was to evaluate the shape, the composition of Calcium Hydroxide Points (CH Point) and to determine the pH level in water. The shape of CH Point was measured by using a profile projector. The composition of the CH Point was analyzed by the X-ray diffraction and the EPMA. ＃60 CH Point was stored in 10ml of demineralized water that was replaced every day or not replaced for 7 days period. The pH levels of the water were measured by using an ion electrode with an ion meter every day.(omitted)

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.502-502
• /
• 2012

반도체 공정 중 플라즈마를 이용하는 식각 공정의 경우, 실제 식각률이나 profile의 특성은 RF Bias power에 의해 기판에 당겨지는 이온 선속에 의해 큰 영향을 받는다. 때문에 플라즈마 발생장치 내에서 기판에서의 이온에너지 분석이 중요해지고 있다. 이온에너지 분석을 위해 다양한 형태의 이온에너지 분석기가 나와있으나 기판 위에 얹혀있는 양상이었다. 이에 본 발표에서는 실제 기판 안에 이온에너지 분석기를 설치함으로써 실제 기판에서 wafer가 받는 이온들의 양상에 더 가깝게 접근했다. 이렇게 제작 된 이온에너지 분석기를 이용해 대면적 M-ICP(Magnetized-Induced Coupled Plasma)에서 아르곤 가스를 이용한 플라즈마에서 기판 이온 에너지 분포를 확인해 보았다. 압력의 변화, ICP Source power의 변화, 일정한 Source power에서 기판에 가해지는 Bias power의 변화에 대해 측정함으로써 각각의 조건 변화에 따른 이온들의 변화양상에 대한 이해를 할 수 있었다.

• Journal of the Korean institute of surface engineering
• /
• v.32 no.2
• /
• pp.83-92
• /
• 1999

GaN etching was performed using planar inductively coupled $Cl_2$-based plasmas and the effects of main process parameters on the characteristics of the plasmas and their relations to GaN etch rates were studied. Also, the GaN etch mechanism was investigated using a Langmuir probe and optical emission spectroscopy (OES) during the etching, and X-ray photoelectron spectroscopy (XPS) of the etched surfaces. The GaN etch rates increased with the increase of chlorine radical density and ion energy, and a vertical etch profile haying the etch rate close to 4000 $\AA$/min could be obtained. The addition of 10% Ar to $Cl_2$ gas increased the GaN etch rate and the addition of Ar (more than 20%) and HBr generally reduced the GaN etch rate. The GaN etch rate appeared to be more affected by the chemical reaction between Cl radicals and GaN compared to the physical sputtering itself under the sufficient ion bombardments to break GaN bonds.

• Journal of Microbiology
• /
• v.44 no.3
• /
• pp.255-262
• /
• 2006

Titanium and its alloys are technically superior and cost-effective materials, with a wide variety of aerospace, industrial, marine, and commercial applications. In this study, the effects of titanium ions on bacterial growth were evaluated. Six strains of bacteria known to be resistant to both metal ions and antibiotics were used in this study. Two strains, Escherichia coli ATCC 15489, and Pseudomonas aeruginosa ATCC 10145, proved to be resistant to titanium ions. Plasmid-cured p. aeruginosa resulted in the loss of one or move resistance markers, indicating plasmid-encoded resistance. The plasmid profile of p. aeruginosa revealed the presence of a 23-kb plasmid. The plasmid was isolated and transformed into $DH5{\alpha}$. Interestingly, the untransformed $DH5{\alpha}$ did not grow in 300 mg/l titanium ions, but the transformed $DH5{\alpha}$ grew quite well under such conditions. The survival rate of the transformed $DH5{\alpha}$ also increased more than 3-fold compared to that of untransformed $DH5{\alpha}$.