• 전자공학회논문지D
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• 제35D권5호
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• pp.1-10
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• 1998

A GaAs MMIC composed of VCO (voltage controlled oscillator) and mixer for PCS receiver has been developed using 1.mu.m ion implanted GaAs MESFET process. The VCO consists of a colpitts-type oscillator with a dielectric resonator and the circuit configuration of the mixer is a dual-gate type with an asymmetric combination of LO and RF FETs for the improvement of intermodulation characteristics. The common-source self-biasing is used in all circuits including a buffer amplifier and mixer, achieving a single power supply (3V) operation. The total power dissipation is 78mW. The VCO chip shows a phase noise of-99 dBc/Hz at 100KHz offset. The combined VCO/mixer chip shows a flat conversion gain of 2dB, the frequency-tuning factor of 80MHz/volts in the varacter bias ranging from 0.5V to 0.5V , and output IP3 of dBm at varactor bias of 0V. The fabricated chip size is 2.5mm X 1.4mm.

• 전자공학회논문지D
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• 제34D권10호
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• pp.14-23
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• 1997

An MMIC downconverting mixer for cellular phone application has been successfully developed using an MMIC process including $1 \mu\textrm{m}$ ion implanted gaAs MESFET and passive lumped elements consisting of spiral inductor, $Si_3N_4$ MIM capacitor and NiCr resistor. The configuration of the mixer presented in this paper is single-ended dual-gate FET mixer with common-source self-bias circuits for single power supply operation. The dimension of the fabricated circuit is $1.4 mm \times 1.03 mm $ including all input matching circuits and a mixing circuit. The conversion gian and noise figure of the mixer at LO powr of 0 dBm are 5.5dB and 19dB, respectively. The two-tone IM3 characteristics are also measured, showing -60dBc at RF power of -30dBm. Allisolations between each port show better than 20dB.

• 전자공학회논문지D
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• 제35D권4호
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• pp.1-8
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• 1998

An MMIC single-balanced upconverting mixer for PCS application has been successfully developed using an MMIC process employed by 1 .mu. ion implanted GaAs MESFET and passive lumped elements consisting of spiral inductor, Si3N4 MIM capacitors and NiCr resistors. The configuration of the mixer presented in this paper is two balanced cascode FET mixers with common-source self-bias circuits for single power supply operation. The dimension of the fabricated circuit including two active baluns intermodulation characteristic with two-tone excitation are also measured, showing -28.17 dBc at IF power of -30 dBm.

• 한국세라믹학회지
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• 제40권10호
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• pp.967-972
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• 2003

직경 5 cm cold hollow cathode 이온원을 박막의 이온보조증착법 또는 이온보조반응법에 사용하기에 적합한 이온빔으로 넓은 면적을 균일하게 조사할 수 있는 이온원을 설계, 제작하기 위한 방안으로 연구하게 되었다. 이온원은 글로우 방전을 위한 음극과 이온화 효율의 증가를 위한 자석, 플라즈마 챔버, 그리드 전극으로 이루어진 이온광학시스템, 직류전원공급장치로 이루어진다. 전자인출전극의 구조 및 형태로 구분하여 한개의 노즐로 이루어진 (I) 형태와 복수개의 노즐로 변형된 (II) 형태로 제작하였다. 서로 다른 구조의 전자인출전극 (I)형태와 (II) 형태를 부착한 이온원에 beam profile을 측정한 결과 (I) 형태의 전자인출전극을 부착한 경우에는 이온원의 중심에서 140 $\mu\textrm{A}$/$\textrm{cm}^2$으로 측정되어 졌으며, 외곽으로 멀어질수록 급격히 전류밀도가 감소하여 균일한 영역(최대값의 90%)은 직경 5 cm로 측정되어졌다. (II) 형태로 변형되어진 이온원의 경우 중심에서 65 $\mu\textrm{A}$/$\textrm{cm}^2$으로 (I) 형태와 비교하여 상대적으로 낮은 전류밀도가 측정되었지만 외각으로 멀어졌을 경우에도 전류밀도는 완만하게 감소하여 균일한 영역은 직경 20 cm로 측정되었으며, 본 연구목적에 부합되는 특성이 측정되었다. 이온빔 균일도가 증가한 (II) 형태의 전자인출전극을 부착한 이온원으로 주입하는 아르곤 가스량의 변화, 이온광학시스템의 플라즈마 그리드 전극과 가속 그리드 전극 간격의 조절, 이온빔 에너지 변화에 따른 beam profile 및 특성을 괸찰하였다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2001년도 제14회 신호처리 합동 학술대회 논문집
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• pp.777-783
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• 2001

This paper is mainly concerned with the state of the practical developments of a constants PWM bridge type resonants DC-DC suitable converter for Nd:YAG Laser with a Microprocessor. (PIC16C54 & 8051) The use of IGBT power supply with feedback control of flashLamp currents imparts a advantages to Nd:YAG Laser for materials processing. these include the alility to tailor the pulseshape and modify pulse parameters on a pulse- by pulse basis. And Correct choice of pulseshape can enhance the repeatability of the process. as higher power IGBT became available, act ive pulseforming power supplies will find greater user in deep hole drilling machine By Using certain control tecniques, utililized in designing Pic16c54 from Microchip technology and Intel 8051, also Mornitoring from Microsoft Visual Basic 5, And it allowed us to designed and fabricate ahigh repel it ion rate and high power(HRHP) pulsed Nd:YAG laser system, As a result of that, the current pulsewidth could be contort led 200s to 350s(step 50s) , and the pulse repetition rate could be adjusted 500pps to 1150pps. In addition, in the case of one laser head consisting of a Nd:YAG laser rod and two flashlamps , the maximum laser output of 240w was produced at the condition of 350s and 1150pps, and that of about 480w was generated at the same condition when two laser heads were arranged in cascade.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.155.2-155.2
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• 2013

Strain-relaxed SiGe layer on Si substrate has numerous potential applications for electronic and opto- electronic devices. SiGe layer must have a high degree of strain relaxation and a low dislocation density. Conventionally, strain-relaxed SiGe on Si has been manufactured using compositionally graded buffers, in which very thick SiGe buffers of several micrometers are grown on a Si substrate with Ge composition increasing from the Si substrate to the surface. In this study, a new plasma process, i.e., the combination of PIII&D and HiPIMS, was adopted to implant Ge ions into Si wafer for direct formation of SiGe layer on Si substrate. Due to the high peak power density applied the Ge sputtering target during HiPIMS operation, a large fraction of sputtered Ge atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed Ge plasma, the ion implantation of Ge ions can be successfully accomplished. The PIII&D system for Ge ion implantation on Si (100) substrate was equipped with 3'-magnetron sputtering guns with Ge and Si target, which were operated with a HiPIMS pulsed-DC power supply. The sample stage with Si substrate was pulse-biased using a separate hard-tube pulser. During the implantation operation, HiPIMS pulse and substrate's negative bias pulse were synchronized at the same frequency of 50 Hz. The pulse voltage applied to the Ge sputtering target was -1200 V and the pulse width was 80 usec. While operating the Ge sputtering gun in HiPIMS mode, a pulse bias of -50 kV was applied to the Si substrate. The pulse width was 50 usec with a 30 usec delay time with respect to the HiPIMS pulse. Ge ion implantation process was performed for 30 min. to achieve approximately 20 % of Ge concentration in Si substrate. Right after Ge ion implantation, ~50 nm thick Si capping layer was deposited to prevent oxidation during subsequent RTA process at $1000^{\circ}C$ in N2 environment. The Ge-implanted Si samples were analyzed using Auger electron spectroscopy, High-resolution X-ray diffractometer, Raman spectroscopy, and Transmission electron microscopy to investigate the depth distribution, the degree of strain relaxation, and the crystalline structure, respectively. The analysis results showed that a strain-relaxed SiGe layer of ~100 nm thickness could be effectively formed on Si substrate by direct Ge ion implantation using the newly-developed PIII&D process for non-gaseous elements.

• 한국산업정보학회논문지
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• 제18권5호
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• pp.73-80
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• 2013

최근 인공위성의 에너지 저장 매체로서 리튬-이온 배터리가 각광을 받는 추세이다. 리튬-이온 배터리는 다른 화학적 특성을 가지는 배터리들에 비해 높은 작동 전압과 큰 용량을 가지면서 부피도 작기 때문에 위성의 eclipse 기간 동안 위성에 전력을 공급하는 데에 매우 효과적이다. 위성에 전력을 공급하기 위한 에너지 저장 장치로서 리튬-이온 배터리를 사용하기 위해서는 하나의 cell이 아닌 다중 cell을 직렬 연결해서 사용해야 한다. 그러나 cell 간의 미소한 내부저항 차이 때문에 cell 전압의 언밸런스 (Unbalance)가 야기되고 충전 시 저항이 낮은 cell이 과 충전 되어 전지 용량이 급격히 저하되고 이로 인해 배터리의 수명이 줄어들게 된다. 따라서 본 논문에서는 Fly-back topology를 이용하여 다중 cell을 직렬 연결할 때 각 cell간의 전압 편차를 줄여주는 전압안정화 회로를 구현하였으며, prototype 제작 및 시험을 통해 배터리의 전압이 균일해지는 것을 확인하였다.

• 열처리공학회지
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• 제23권1호
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• pp.23-28
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• 2010

The cylindrical magnetron sputtering has not been widely used, although this system is useful for only certain types of applications such as fiber coatings. This paper presents electrode configurations which improved the complicacy of the target assembly by using the positive voltage power supply. It is a modified type which has a target constructed with a large cylindrical part, a conical part and a small cylindrical part. When positive voltage was applied to an anode, a stable glow discharge was established and a high deposition rate was obtained. The substrate bias current was monitored to estimate the effect of ion bombardment. As a result, it was found that the substrate current was large. With cylindrical and conical cathode magnetron sputter deposition on the surface of the substrate to prevent re-sputtering, ion impact because it can increase the effectiveness with excellent ductility and adhesion of Ti film deposition can be obtained. We board at the front end of the ground resistance of $5\;k{\Omega}$ attached to the substrate potential can be controlled easily, and Ti film deposition with excellent adhesion can be obtained. Microstructure and morphology of Ti films deposited on pure Cu wires were investigated by scanning electron microscopy in relation to preparation conditions. High level ion bombardment was found to be effective in obtaining a good adhesion for Cu wire coatings.

• Korean Chemical Engineering Research
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• 제53권3호
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• pp.269-275
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• 2015

질산이온 선택성 탄소전극(NSCE, nitrate-selective carbon electrode)에서 전원공급 방식에 따른 이온들의 흡착특성을 분석하였다. 질산이온에 선택성이 높은 음이온수지 분말을 탄소전극에 코팅하여 NSCE를 제조하였다. 질산과 염소이온의 혼합용액에 대해 정전압(CV, constant voltage)과 정전류(CC, constant current) 모드에서 축전식 탈염(CDI, capacitive deionization)을 실시하였다. 이온들의 총 흡착량은 CV 모드로 운전한 경우 CC 모드에 비해 약 15% 증가하였다. 혼합용액에서 질산이온의 비율은 26%로 낮았지만 흡착된 질산이온의 몰비율은 최대 58%로 나타나 NSCE가 질산이온을 선택적으로 제거하는데 효과적임을 확인하였다. CC 모드에서 운전한 경우 흡착된 질산이온의 몰비율은 흡착기간 동안 55~58%로 일정하였다. 반면 CV 모드에서는 30~58%로 큰 차이를 보였다. 이를 통해 셀에 공급되는 전류가 질산이온의 선택적 제거율을 결정하는데 중요한 인자임을 알 수 있었다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2008년도 춘계학술대회 논문집
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• pp.1-4
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• 2008

Fuel cells have the potential of providing several times higher energy storage densities than those possible using current state-of-the-art lithium-ion batteries, but current energy density of fuel cell system is not better than that of lithium-ion batteries. To achieve the high energy density, volume and weight of fuel cell system need to be reduced by miniaturizing system components such as stack, fuel tank, and balance-of-plant. In this paper, the thin flexible PCB (Printed circuit board) is used as a current collector to reduce the stack volume. Two end plates are made from light weight aluminum alloy plate. The plate surface is wholly oxidized through the anodizing treatment for electrical insulation. The opening rate of cathode plate hole is optimized through unit cell performance measurement of various opening rates. The performances are measured at room temperature and ambient pressure condition without any repulsive air supply. The active area of MEA is 10.08 $cm^2$ and active area per a unit cell is 1.68 $cm^2$. The peak power density is about 210 mW/$cm^2$ and the air-breathing planar stack of 2 Wis achieved as a small volume of 18 cc.