• 제어로봇시스템학회논문지
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• 제9권12호
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• pp.1042-1047
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• 2003

The goal of this research is to implement a PC-based remote control system of ion implanter using Visual Basic programming. Presently, skilled process engineers are required to regularly setup and adjust implanter parameters. Any reduction in the number of production hours devoted to ion beam implanter setup or recalibration after a species change would represent substantial improvements in both manpower and equipment utilization. An optical communication system for the remote control and telemetry in the operation of the 50kev potential was designed and constructed. This system enables continuous and safe operation of the ion implanter and can be the basis for the automation. The isolation characteristics of optical fiber were 10kV/cm, and performance tests of the system under the intense noise environment during the implanter operations showed satisfactory results. This system is designed to completely replace the existing human-machine interface with many new functions. This paper describes the important components of the system including system architecture and software development. It is expected that this system can be used for the communication and control purpose in the high noise environments such as the operation of the MeV energy implanter or other high power, high noise systems.

• Nuclear Engineering and Technology
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• 제41권5호
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• pp.709-714
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• 2009

An ion implanter, which can serve as a metal-ion supply, has been constructed and performance tested. Copper ions are generated and extracted from a Bernas ion source with a heating crucible that provides feed gases to sustain the plasma. Sable arc plasmas can be sustained in the ion source for a crucible temperature in excess of $350^{\circ}C$. Stable extraction of the ions is possible for arc Currents less than 0.3 A. Arc currents increase with the induced power of a block cathode and the transverse field in the ion source. $Cu^+$ ions in the extracted beam are separated using a dipole magnet. A $20{\mu}A$ $Cu^+$ ion current can be extracted with a 0.2 A arc current. The ion current can support a dose of $10^{16}ions/cm^2$ over an area of $15\;cm^2$ within a few hours.

• 한국산업보건학회지
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• 제33권4호
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• pp.439-446
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• 2023

Objectives: The aims of this study are to investigate how X-rays are emitted to surrounding parts during the ion implantation process, to analyze these emissions in relation to the properties of the ion implanter equipment, and to estimate the resulting exposure dose. Eight ion implanters equipped with high-voltage electrical systems were selected for this study. Methods: We monitored X-ray emissions at three locations outside of the ion implanters: the accelerator equipped with a high-voltage energy generator, the impurity ion source, and the beam line. We used a Personal Portable Dose Rate and Survey Meter to monitor real-time X-ray levels. The SX-2R probe, an X-ray Features probe designed for use with the Radiagem^TM meter, was also utilized to monitor lower ranges of X-ray emissions. The counts per second (CPS) measured by the meter were estimated and then converted to a radiation dose (𝜇Sv/hr) based on a validated calibration graph between CPS and μGy/hr. Results: X-rays from seven ion implanters were consistently detected in high-voltage accelerator gaps, regardless of their proximity. X-rays specifically emanated from three ion implanters situated in the ion box gap and were also found in the beam lines of two ion implanters. The intensity of these X-rays did not show a clear pattern relative to the devices' age and electric properties, and notably, it decreased as the distance from the device increased. Conclusions: In conclusion, every gap, in which three components of the ion implanter devices were divided, was found to be insufficiently shielded against X-ray emissions, even though the exposure levels were not estimated to be higher than the threshold.

• 한국산학기술학회:학술대회논문집
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• 한국산학기술학회 2008년도 추계학술발표논문집
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• pp.267-269
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• 2008

본 연구는 이온주입(Ion Implanter)장비의 성능향상과 재현성 있는 Source Head를 개발하기 위한 방법이다. 본 개발은 이온주입설비가 가지고 있는 Cathode 열전자를 이용하여 원자라는 Source Positive의 극성을 생성하여 보다 높은 이온화를 발생하여 많은 시간 동안 사용 가능하도록 하였다. 기존에는 Gas의 손실이 많아 원자의 이온화에 대한 열전자의 소모성을 증가하는 원인을 제공하였으나, 본 개발에서는 원자의 유입방식을 공중 분산방식으로 적용함으로써 열전자의 손실로 발생하는 부분을 억제하는 효과와 Arc Chamber의 압력을 낮게 가지고 갈 수 있고 Chamber의 오염을 억제하는 효과를 얻을 수 있었다.

• Journal of Korean Vacuum Science & Technology
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• 제6권2호
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• pp.55-57
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• 2002

Metal-vapor-vacuum-arc ion source is an ideal source for both high current metal ion implanter and high current plasma thin-film deposition systems. It uses the direct evaporation of metal from surface of cathode by vacuum arc to produce a very high flux of ion plasmas. The MEVVA ion source, the high-current metal-ion implanter and high-current magnetic-field-filtered plasma thin-film deposition systems developed in Beijing Normal University are introduced in this paper.

• 한국콘텐츠학회:학술대회논문집
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• 한국콘텐츠학회 2007년도 추계 종합학술대회 논문집
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• pp.865-868
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• 2007

본 연구는 이온주입(Ion Implanter)장비의 성능향상과 재현성 있는 Source Head를 개발하기 위한 방법이다. Source Head의 Life time이 부품 간 사용되는 Life time과 틀리기 때문에 보통 20일 정도 사용하고, 한번 Source Head를 재생하기 위해 교체되는 부품들도 고가일 뿐 만 아니라 50% 이상이 일회성으로 사용되고 있다. 본 개발에서는 원자의 유입방식을 공중 분산방식으로 적용함으로써 열전자의 손실로 발생하는 부분을 억제하는 효과와 Arc Chamber의 압력을 낮게 가지고 갈 수 있고 Chamber의 오염을 억제하는 효과를 얻을 수 있었다.

• 한국진공학회지
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• 제12권S1호
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• pp.46-48
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• 2003

The modification of metal surface by ion implantation with MEVVA ion implanter and thin film deposition with filtered vacuum arc plasma device is introduced in this paper. The combination of ion implantation and thin film deposition is proved as a better method to improve properties of metal surface.

• 한국진공학회지
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• 제18권3호
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• pp.236-243
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• 2009

양성자기반공학기술개발사업단에서는 설치된 금속이온주입기를 이용하여 금속이온의 인출 시험 중에 있으며 120keV의 금속 이온주입이 가능하다. 현재 코발트 이온 주입의 타당성 확인을 위한 특성시험을 수행하고 있다. 이온원에 알루미나 도가니를 설치하여 분말 코발트 염화물을 고온($648^{\circ}C$) 가열에 의한 증기화로 인하여 플라즈마 방전이 되도록 하였다. 아크전압 120V, EHC 출력 250W에서 코발트 이온을 인출하기 위한 플라즈마를 발생하고 유지할 수 있었다. 코발트 이온 빔 전류는 플라즈마 내 아크전류에 의존하였으며 0.18A일 때 최대 빔전류 $100{\mu}A$를 얻을 수 있었다. 질량분리전자석에 의해서 $Co^+$와 $CoCl^+$, $Cl^+$ 이온의 첨두 빔 전류 비율을 확인하였고 전체 이온 대비 $Co^+$ 이온의 비율이 70% 수준을 유지함을 알 수 있었다. $Co^+$ 이온을 알루미늄 시료에 빔전류 $10{\mu}A$, 90분 동안 이온주입 하여 RBS(Rutherford Backscattering Spectrometry)분석법으로 $1.74{\times}10^{17}#/cm^2$의 이온량을 확인하였다.

• 한국전기전자재료학회논문지
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• 제16권3호
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• pp.175-180
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• 2003

As the integrated circuit device shrinks to the deep submicron regime, the ion implantation process with high ion dose has been attracted beyond the conventional ion implantation technology. In particular, for the case of boron ion implantation with low energy and high dose, the stabilization and throughput of semiconductor chip manufacturing are decreasing because of trouble due to the machine conditions and beam turning of ion implanter system. In this paper, we focused to the improved characteristics of processing conditions of ion implantation equipment through the modified deceleration mode. Thus, our modified recipe with low energy and high ion dose can be directly apply in the semiconductor manufacturing process without any degradation of stability and throughput.

• 대한의용생체공학회:학술대회논문집
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• 대한의용생체공학회 1995년도 춘계학술대회
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• pp.207-208
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• 1995