• Progress in Superconductivity and Cryogenics
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• v.17 no.4
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• pp.8-11
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• 2015

We studied on the visible emission of Cu-ion-doped perovskite hafnate $SrHfO_3$ (SHO:Cu) with the photo-excitation energy dependence. The polycrystalline SHO:Cu samples were newly synthesized in the solid state reaction method. From the X-ray diffraction measurement it was found that the crystalline structure of SHO:Cu is nearly identical to that of undoped $SrHfO_3$. Interestingly, the photoluminescence excitation (PLE) spectra change significantly with the emission energy, which is linked to the strong dependence of the visible emission on the photo-excitation energy. This unusual emission behavior is likely to be associated with the mixed valence states of the doped Cu ions, which were revealed by X-ray photoelectron spectroscopy. We compared our finding of tunable visible emission in the SHO:Cu compounds with the cases of similar materials, $SrTiO_3$ and $SrZrO_3$ with Cu-ion-doping.

• Journal of Information Display
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• v.3 no.1
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• pp.17-21
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• 2002

Measurement of the ion-induced secondary electron emission coefficient (${\gamma}_i$) for insulating films is hampered by an unavoidable charging problem. Here, we demonstrate that a pulsed ion beam technique is a viable solution to the problem, allowing for accurate measurement of ${\gamma}_i$ for insulating materials. To test the feasibility of the pulsed ion beam method, the secondary electron emission coefficient from n-Si(100) is measured and compared with the result from the conventional continuous beam method. It is found that the ${\gamma}_i$ from n-Si(100) by the ion pulsed beam measured to be 0.34, which is the same as that obtained by continuous ion beam. However, for the 1000 A $SiO_2$ films thermally deposited on Si substrate, the measurement of ${\gamma}_i$ could be carred out by the pulsed ion method, even though the continuous beam method faced charging problem. Thus, the pulsed ion beam is regarded to be one of the most suitable methods for measuring secondary electron coefficient for the surface of insulator materials without experiencing charging problem. In this report, the dependence of ${\gamma}_i$ on the kinetic energy of $He^+$ is presented for 1000 ${\AA}$ $SiO_2$ films. And the secondary electron emission coefficient of 1000 ${\AA}$ MgO e-beam-evaporated on $SiO_2/Si$ is obtained using the pulsing method for $He^+$ and $Ar^+$ with energy ranging from 50 to 200 eV, and then compared with those from the conventional continuous method.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.8
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• pp.419-422
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• 2001

This paper presents the principle and fabrication of a novel micro mass spectrometer and emission test of hot electron for ionization. A micro mass spectrometer consists of a micro ion source and a micro ion separator. The micro ion source consists of a hot filament and grid electrodes. Electrons emitted from a hot filament are to ionize some sample molecules. The ions are accelerated to an ion detector by an electric field. Mass can be analyzed by using the time of fight depending on the mass-to-charge ratio. The current of hot electron emission from the hot filament is measured for various input voltages.

• Proceedings of the KSME Conference
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• 2008.11b
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• pp.2186-2191
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• 2008

An experimental study was performed to investigate the effect of swirl condition and secondary air rate on the Ion voltage and CO emission characteristics. In this study, the combustion characteristics were investigated with the variation of swirler diameter, vane angle, suction air rate. The result of this study, the Ion voltage increase with increasing the diameter of the swirler. Additionally with increasing the suction air rate, the Ion voltage is the same. The CO concentration depends on suction air rate. In the other hand, it is almost unaffected by swirler's diameter. The flame length and Ion voltage decease with decreasing O2 percentage of surrounding air.

• Journal of the Speleological Society of Korea
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• no.78
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• pp.29-31
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• 2007

This paper is devoted to a study of the characterization of the plasma state. For the purpose of monitoring plasma condition, we experiment on reactive ion etching (RIE) process. Without actual etch process, generated oxygen plasma, measurement of plasma emission intensity. Changing plasma process parameters, oxygen flow, RF power and chamber pressure have controlled. Using the optical emission spectroscopy (OES), we conform to the unique oxygen wavelength (777nm), the most powerful intensity region of the designated range. Increase of RF power and chamber pressure, emission intensity is increased. oxygen flow is not affect to emission intensity.

• Journal of Information Display
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• v.4 no.2
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• pp.35-42
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• 2003

The field emission and luminescent properties of carbon nanotubes (CNTs) that were straightened by argon ion irradiation were investigated. Argon ion irradiation permanently straightened both as-grown and screen-printed CNTs (SP-CNTs) in the presence of a strong electric field. The straightening process enhanced the emission properties of as-grown CNT films by showing a decrease in turn-on field, an increase in total emission current, and a stable emission. Recurring problems associated with SP-CNTs, such as bent or/and buried CNTs and the degradation in binder-residue-induced emission, were improved by the permanent straightening of CNTs and protruding CNTs from binders by the irradiation treatment, in addition to its surface cleaning effect. Furthermore, we confirmed that the number of emission sites increases by observing the luminescent properties of CNT films after the straightening. These findings here suggest that ion irradiation treatment is an effective method for achieving uniform field emission and to reduce the electrical aging time.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.6
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• pp.504-509
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• 2011

The conducting current of non-uniform plasma immersed electrode consists of ion current and secondary electron emission current caused by the impinging ion current. The ion current is determined by the ion dose passing through the sheath in front of electrode and the ion distribution in front of the electrode plays an important role in the secondary electron emission. The investigation of the distributed plasma and secondary electron effect on electrode ion current was carried out as the stainless steel electrode plugged with quartz tube was immersed in the inductively coupled Ar plasma using the antenna powered by 1 kw and the density profile was measured. After that, the negative voltage was applied by 1 kV~6 kV to measure the conduction current for the analysis of ion current.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.4
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• pp.777-782
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• 2009

In this paper, the effect of the secondary electron emission coefficient of Xe ion on glow discharge was examined by ID numerical simulation. The simulation was performed for two distinct structures, short and long gaps. The features of the glow discharges in the both structures, firing and sustain voltages, luminance, and efficiency, were analyzed at various secondary electron emission coefficient of Xe ion.

• Journal of the Semiconductor & Display Technology
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• v.17 no.4
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• pp.97-100
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• 2018

$NF_3$ Plasma etching of silicon was conducted by injecting only $NF_3$ gas into reactive ion etching. $NF_3$ Plasma etching was done in intermediate pressure. Silicon etching by $NF_3$ plasma in reactive ion etching was diagnosed through residual gas analyzer and optical emission spectroscopy. In plasma etching, optical emission spectroscopy is generally used to know what kinds of species in plasma. Also, residual gas analyzer is mainly to know the byproducts of etching process. Through experiments, the results of optical emission spectroscopy during silicon etching by $NF_3$ plasma was analyzed with connecting the results of etch rate of silicon and residual gas analyzer. It was confirmed that $NF_3$ plasma etching of silicon in reactive ion etching accords with the characteristic of reactive ion etching.

• Applied Science and Convergence Technology
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• v.25 no.6
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• pp.116-119
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• 2016

In this study, we fabricated the $K^+$ ion source for the various purposes and investigated the emission characteristics. The fabricated $K^+$ ion source was painted in the tungsten filament to make filament type ion source. The RGA spectra show that the filament type $K^+$ ion source has a good out gassing character, so it can be used in the ultra-high vacuum system. The maximum $K^+$ ion current was 20 mA when filament temperature was 1410 K and filament potential was 50 V. When the filament temperature was 1070 K, the initial beam current was 50 mA and decreased only by 2% during 4 hours. The emitting energy was measured to be 2.04 eV. This low value means that the fabricated specimen is a good $K^+$ ion source. We conclude that this filament type ion source can be used in various fields, including the LEIS research.