• Archives of Pharmacal Research
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• v.23 no.4
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• pp.407-412
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• 2000

The presence of the nitric oxide synthase (NOS) enzyme from Salmonella typhimurium (S. typhimurium) was identified by measuring radiolabeled L-$[^3H]$citrulline and NO, and Western blot analysis. NOS was partially purified by both Mono Q ion exchange and Superose 12HR size exclusion column chromatography, sequentially. The molecular weight of NOS was estimated to be 93.3 kDa by Western blot analysis. The enzyme showed a significant dependency on the typical NOS cofactors; an apparent Km for L-arginine of 34.7 mM and maximum activity between $37^{\circ}C$ and $43^{\circ}C$. The activity was inhibited by NOS inhibitors such as aminoguanidine and $N^{G}$ $N^{G}$-dimethyl-L-arginine. taken together, partially purified NOS in S. typhimurium is assumed to be a different isoform of mammalian NOSs.OSs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.4
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• pp.280-285
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• 2003

The influence of silicon surface damage on nickel-silicide (NiSi) has been characterized and H$_2$ anneal and TiN rapping has been applied to suppress the electrical, morphological deterioration phenomenon incurred by the surface damage. The substrate surface is intentionally damaged using Ar IBE (Ion beam etching) which can Precisely control the etch depth. The sheet resistance of NiSi increased about 18% by the surface damage, which is proven to be mainly due to the reduced silicide thickness. It is shown that simultaneous application of H: anneal and TiN capping layer is highly effective in suppressing the surface damage effect.

• Journal of the Korean Chemical Society
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• v.13 no.3
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• pp.199-204
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• 1969

The distribution rate of 4f and 5f series elements in chelate and ion association extraction system was studied. Clear difference between lighter and heavier part of 4f series are observed. Trivalent Am and Cm were appeared to be grouped into the lighter part of 4f series. And also the variation of distribution ratio according to the varied temperature was studied. The variation modes of distribution ratio are different according to the extraction system. Atomic number dependence in the chelate extraction system was observed.

• Progress in Medical Physics
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• v.6 no.2
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• pp.13-19
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• 1995

The behavior of the correction factor associated with the collimator opening(head-scatter factor) were investigated for the 6MV x-ray beams of medical linear accelerator. The primary photon fluence was measured in air quasi-small fied size. Consideration in this study was given to the effect of head scatter factor with quasi-small fied size, the upper and lower collimator jaw scatter collection factors of quasi-small field (4-10cm) were measured with ion chamber. In general, the wedge factors which are used clinical practics are ignored of dependency on field sizes and depth. In wedge factors for each wedge filter were measured at various depth by using 6MV X-ray. In this present we inverstigated systematically the depth and field sizes dependency to determine the absorbed dose more accurately. Head scatter(upper-lower collimator jaw)appears to be (1) a small effect, less than 5％ over the range of clinical field sizes (2) generated primarily at the flattening filter and therefored influenced most by the upper collimator setting.

• Progress in Medical Physics
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• v.17 no.3
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• pp.131-135
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• 2006

A commercial ion chamber matrix was examined the characteristics and its performance for radiotherapy qualify assurance. The device was the I'mRT 2D-MatriXX (Scanditronix-Wellhofer, Schwarzenbruck, Germany). The 2D-MatriXX device consists of a 1020 vented ion chamber array, arranged in $24{\times}24cm^2$ matrix. Each ion chamber has a volume of $0.08cm^3$, spacing of 0.762 cm and minimum sampling time of 20 ms. For the investigation of the characteristics, dose linearity, output factor, short-term reproducibility and dose rate dependency were tested. In the testing of dose linearity. It has shown a good signal linearity within 1% in the range of $1{\sim}800$cGy. Dose rate dependency was found to be lower than 0.4% (Range: 100-600 Mu/min) relative to a dose rate of 300 Mu/min as a reference. Output factors matched very well within 0.5% compared with commissioned beam data using a ionization chamber (CC01, Scanditronix-Wellhofer, Schwarzenbruck, Germany) in the range of field sizes $3{\times}3{\sim}24{\times}24cm^2$. Short-term reproducibility (6 times with a interval of 15 minute) was also shown a good agreement within 0.5%, when the temperature and the pressure were corrected by each time of measurement. in addition, we compared enhanced dynamic wedge (EDW, Varian, Palo Alto, USA) profiles from calculated values in the radiation planning system with those from measurements of the MatriXX. Furthermore, anon-uniform IMRT dose fluence was tested. All the comparison studies have shown good agreements. In this study, the MatriXX was evaluated as a reliable dosimeter, and it could be used as a simplistic and convenient tool for radiotherapy qualify assurance.

• Bulletin of the Korean Chemical Society
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• v.29 no.10
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• pp.1937-1940
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• 2008

The P1 duplex of Tetrahymena group I ribozyme is the important system for studying the conformational changes in folding of ribozyme. The formation of the P1 duplex between IGS and substrate RNA and the catalytic activity of ribozyme require a variety of metal ions such as $Mg^{2+}$ and $Mn^{2+}$. In order to investigate the effect of the $Mg^{2+}$ concentration on the conformation of the P1 duplex, the NMR study was performed as a function of $Mg^{2+}$ concentration. This study revealed that the less stable AU-rich region formed duplex at $50{^{\circ}C}$ under high $Mg^{2+}$ concentration condition but melts out under low $Mg^{2+}$ concentration condition. It was also found that in the active conformation under 10 mM $MgCl_2$ condition, the unstable central G${\cdot}$U wobble pair maintains the significant base pairing up to $50{^{\circ}C}$. This study provides the information of the unique feature of the P1 duplex structure and the roll of $Mg^{2+}$ ion on the formation of the active conformation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.297-298
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• 2005

We have fabricated twisted nematic (TN) liquid crystal cells doped by carbon nanotubes (CNTs) with different CNT wt. %. With a minute amount doping, multi-walled CNTs did not perturb the liquid crystal orientations at the off- and on-state. The hysteresis studies of voltage-dependent capacitance (V-C) under the influence of electric field generated by ac and dc voltage show that the residual do, which is tightly related to image sticking problem in liquid crystal displays, is greatly reduced due to ion trapping by CNTs. Also, the V-C hysteresis shows dependency of capacitance on concentration of multi-walled CNTs.

• Analytical Science and Technology
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• v.6 no.1
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• pp.83-92
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• 1993

The electrochemical behaviors of lanthanide ion(La and Nd) and lanthanide complexes with 2, 2, 6, 6-tetramethyl-3, 5-heptanedione(THD), sym-hydroxydibenzo-16-crown-5(HD16C5) and sym-dibenzo-16-crown-5-oxyacetic acid(D16C5A) ligands in acton solution have been investigated by the use of cyclic voltammetry and direct current polarography. The peak potential and peak current, their dependency on the concentration, temperature, the reversibility of the eleotrode reactions are described. The reduction of the lanthanide ions and complexes in 0.05 M TEAP proceeded one-electron step in first step and one two-electron step in second step. These reduction step was irreversible and the reduction current was diffusion controlled. Macrovcyclic crown ethers, sym-hydroxydibenzo-16-crown-5(HD16C5) and sym-dibenzo-16-crown-5-oxyacetic acid(D16C5A), were prepared from 1, 5-bis-(2-hydroxyphenoxy)-3-oxapentane with epichlorohydrin. The voltammetric behaviors of Ln(III)-HD16C5 and Ln-D16C5A complexes in aceton solution have been investigated by the voltammetric method. The composition and stability constants of lanthanide complexes were determined.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.8
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• pp.674-677
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• 2011

The dependency of sputtering power on the electrical performances in amorphous HIZO-TFT (hafnium-indium-zinc-oxide thin film transistors) has been investigated. The HIZO channel layers were prepared by using radio frequency (RF) magnetron sputtering method with different sputtering power at room temperature. TOF-SIMS (time of flight secondary ion mass spectrometry) was performed to confirm doping of hafnium atom in IZO film. The field effect mobility (${\mu}FE$) increased and threshold voltage ($V_{th}$) shifted to negative direction with increasing sputtering power. This result can be attributed to the high energy particles knocking-out oxygen atoms. As a result, oxygen vacancies generated in HIZO channel layer with increasing sputtering power resulted in negative shift in Vth and increase in on-current.

• 한국신재생에너지학회:학술대회논문집
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• 2005.11a
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• pp.561-566
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• 2005

Polycrystalline silicon films were deposited using hot wire CVD (HWCVD). The deposition of silicon thin films was approached by the theory of charged clusters (TCC). The TCC states that thin films grow by self-assembly of charged clusters or nanoparticles that have nucleated in the gas phase during the normal thin film process. Negatively charged clusters of a few nanometer in size were captured on a transmission electron microscopy (TEM) grid and observed by TEM. The negatively charged clusters are believed to have been generated by ion-induced nucleation on negative ions, which are produced by negative surface ionization on a tungsten hot wire. The electric current on the substrate carried by the negatively charged clusters during deposition was measured to be approximately $-2{\mu}A/cm^2$. Silicon thin films were deposited at different $SiH_4$ and $H_2$ gas mixtures and filament temperatures. The crystalline volume fraction, grain size and the growth rate of the films were measured by Raman spectroscopy, X-ray diffraction and scanning electron microscopy. The deposit ion behavior of the si1icon thin films was related to properties of the charged clusters, which were in turn controlled by the process conditions. In order to verify the effect of the charged clusters on the growth behavior, three different electric biases of -200 V, 0 V and +25 V were applied to the substrate during the process, The deposition rate at an applied bias of +25 V was greater than that at 0 V and -200 V, which means that the si1icon film deposition was the result of the deposit ion of charged clusters generated in the gas phase. The working pressures had a large effect on the growth rate dependency on the bias appled to the substrate, which indicates that pressure affects the charging ratio of neutral to negatively charged clusters. These results suggest that polycrystalline silicon thin films with high crystalline volume fraction and large grain size can be produced by control1ing the behavior of the charged clusters generated in the gas phase of a normal HWCVD reactor.