• Title/Summary/Keyword: ion clusters

Search Result 89, Processing Time 0.02 seconds

Intramolecular Ion-Molecule Reactions within Ti+(CH3COCH3)n Heteroclusters: Oxidation Pathway via C=O Bond Activation

  • Koo, Young-Mi;Hong, Ki-Ryong;Kim, Tae-Kyu;Jung, Kwang-Woo
    • Bulletin of the Korean Chemical Society
    • /
    • v.31 no.4
    • /
    • pp.953-958
    • /
    • 2010
  • A laser ablation-molecular beam/reflectron time-of-flight mass spectrometric technique was used to investigate the ion-molecule reactions that proceed within $Ti^+(CH_3COCH_3)_n$ heterocluster ions. The reactions of $Ti^+$ with $CH_3COCH_3$ clusters were found to be dominated exclusively by an oxidation reaction, which produced $TiO^+(CH_3COCH_3)_n$ clusters. These ions were attributed to the insertion of a $Ti^+$ ion into the C=O bond of the acetone molecule within the heteroclusters, followed by $C_3H_6$ elimination. The mass spectra also indicated the formation of minor sequences of heterocluster ions with the formulas $Ti^+(C_3H_4O)(CH_3COCH_3)_n$ and $TiO^+(OH)(CH_3COCH_3)_n$, which could be attributed to C-H bond insertion followed by $H_2$ elimination and to the sequential OH abstraction by the $TiO^+$ ion, respectively. Density functional theory calculations were carried out to model the structures and binding energies of both the association complexes and the relevant reaction products. The reaction pathways and energetics of the $TiO^+\;+\;CH_2CHCH_3$ product channel are presented.

Reactive Ion Scattering Study of Ice Surfaces. Proton Transfer and H/D Exchange Reactions

  • Mun, Ui-Seong;Kim, Su-Yeon;Gang, Heon
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2010.08a
    • /
    • pp.64-64
    • /
    • 2010
  • Ice film surfaces were examined by using the reactive ion scattering (RIS) of low energy (<35 eV) cesium ion beams. Neutral molecules (X) on the surface were detected in the form of cesium-molecule ion clusters (CsX+). Ionic species on the surface were desorbed from the surface via a low energy sputtering (LES) process below the threshold energy of secondary ion emission. The RIS and LES methods allowed us to study the H/D exchange reactions between H2O and D2O molecules on the surface and the associated proton transfer mechanisms. Specifically, H/D exchange kinetics was examined for D2O ice films (~10 BL) covered with a small amount of H2O (<0.5 BL), in the presence or absence of HCl adsorbates which provided excess protons on the surface.

  • PDF

Argon and Nitrogen Implantation Effects on the Structural and Optical Properties of Vacuum Evaporated Cadmium Sulphide Thin Films (CdS 박막의 구조적 및 광학적 물성에 미치는 아르곤 및 질소 이온 주입 효과)

  • ;;D. Mangalaraj
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.15 no.6
    • /
    • pp.471-478
    • /
    • 2002
  • Vacuum evaporated cadmium sulphide (CdS) thin films were implanted with $Ar^+$ and $N^+$ for different doses. The properties of the ion implanted CdS thin films have been analysed using XRD, optical transmittance spectra, and Raman scattering studies. Formation of Cd metallic clusters were observed in ion implanted films. The band gap of $Ar^+$ doped films decreased from 2.385 eV of the undoped film to 2.28 eV for the maximum doping. In the case of $N^+$ doped film the band gap decreased from 2.385 to 2.301 eV, whereas the absorption coefficient values increased with the increase of implantation dose. On implantation of both types of ions, the Raman peak position appeared at $299\textrm{cm}^{-1}$ and the FWHM changed with the ion dose.

Photodissociation of Nitrous Oxide by Slice Ion Imaging: The Stagnation Pressure Dependence

  • Cheong, Nu-Ri;Park, Hye-Sun;Nam, Sang-Hwan;Shin, Seung-Keun;Cho, Soo-Gyeong;Lee, Hai-Whang;Song, Jae-Kyu;Park, Seung-Min
    • Bulletin of the Korean Chemical Society
    • /
    • v.30 no.11
    • /
    • pp.2661-2664
    • /
    • 2009
  • Photodissociation of nitrous oxide near 203 nm has been studied by a combination of high resolution slice ion imaging technique and (2+1) resonance-enhanced multiphoton ionization (REMPI) spectroscopy of $N_2(X^1{{\Sigma}_g}^+)$ via the (a″$^1{{\Sigma}_g}^+$) state. We have measured the recoil velocity and angular distributions of $N_2$ fragments by ion images of the state-resolved photofragments. The $N_2$ fragments were highly rotationally excited and the NN-O bond dissociation energy was determined to be 3.635 eV. Also, we investigated the photofragment images from the photodissociation of $N_2O$ clusters with various stagnation pressures.

Intracluster Ion/Molecule Reactions within 1,1-Difluoroethylene Homocluster

  • 이선영;최창주;정경훈
    • Bulletin of the Korean Chemical Society
    • /
    • v.18 no.3
    • /
    • pp.296-300
    • /
    • 1997
  • The intracluster ion/molecule reactions within 1,1-difluoroethene homocluster have been studied by electron-impact quadrupole mass spectrometry. When CH2CF2 seeded in helium is expanded and ionized by electron impact, two different types of ion/molecule association (polymerization) reaction products, i.e., (CH2CF2)n+ (n≥l) and (CF2CH2)qX+ (X=fragment species, q≤n), are formed. The higher association products, (CH2CF2)n+ (n=3, 4), have shown stronger intensities over the lower association product, (CH2CF2)2+, in the low electron impact energy region ( < 39 eV). These stronger intensities are interpreted in terms of the stabilization of these ions due to the ring formations over the dimer ion in this energy region. The evidence of ring formation mechanism is on the basis of the intensity distribution of fragments at various electron impact energy. In another typical branched-chain growth reaction of these compounds, the F-shift reaction path is found to be more favorable energetically than the H-shift via the fragment patterns of clusters and semi-empirical calculation.

New Mechanism of Thin Film Growth by Charged Clusters

  • Hwang, Nong-Moon;Kim, Doh-Yeon
    • Proceedings of the Korea Association of Crystal Growth Conference
    • /
    • 1999.06a
    • /
    • pp.115-127
    • /
    • 1999
  • The charged clusters or particles, which contain hundreds to thousands of atoms or even more, are suggested to form in the gas phase in the thin film processes such as CVD, thermal evaporation, laser ablation, and flame deposition. All of these processes are also used in the gas phase synthesis of the nanoparticles. Ion-induced or photo-induced nucleation is the main mechanism for the formation of these nanoclusters or nanoparticles inthe gas phase. Charged clusters can make a dense film because of its self-organizing characteristics while neutral ones make a porous skeletal structure because of its Brownian coagulation. The charged cluster model can successfully explain the unusual phenomenon of simultaneous deposition and etching taking place in diamond and silicon CVD processes. It also provides a new interpretation on the selective deposition on a conducting material in the CVDd process. The epitaxial sticking of the charged clusters on the growing surface is gettign difficult as the cluster size increases, resulting in the nanostructure such as cauliflowr or granular structures.

  • PDF

New mechanism of thin film growth by charged clusters

  • Hwang, Nong-Moon;Kim, Doh-Yeon
    • Journal of the Korean Crystal Growth and Crystal Technology
    • /
    • v.9 no.3
    • /
    • pp.289-294
    • /
    • 1999
  • The charged clusters or particles, which contain hundreds to thousands of atoms or even more, are suggested to from in the gas phase in the thin film processes such as CVD, thermal evaporation, laser ablation, and flame deposition. All of these processes are also phase synthesis of the nanoparticels. Ion-induced or photo-induced nucleation is the main mechanism for the formation of these nanoclusters or nanoparticles in the gas phase. Charge clusters can make a dense film because of its self-organizing characteristics while neutral ones make a porous skeletal structure because of its Brownian coagulation. The charged cluster model can successfully explain the unusual phenomenon of simultaneous deposition and etching taking place in diamond and silicon CVD processes. It also provides a new interpretation on the selective deposition on a conducting material in the CVD process. The epitaxial sticking of the charged clusters on the growing surface is getting difficult as the cluster size increases, resulting in the nanostructure such as cauliflower or granular structures.

  • PDF