• Title/Summary/Keyword: ion beam methods

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BONE RESPONSE OF TWO DIFFERENT SURFACE TITANIUM SUBPERIOSTEAL IMPLANTS - ANODIZED SURFACE, IBAD HA COATING SURFACE (티타늄 임플랜트의 두 가지 표면처리방식에 대한 골반응 - 양극 산화표면, IBAD HA 코팅 표면)

  • Lee, In-Ku;Suh, Kyu-Won;Choi, Joon-Eon;Jung, Sung-Min;Ryu, Jae-Jun
    • The Journal of Korean Academy of Prosthodontics
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    • v.45 no.1
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    • pp.131-143
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    • 2007
  • Statement of the problem: In case of poor bone quality or immediately loaded implant, various strategies have been developed focusing on the surface of materials to improve direct implant fixation to the bone. The microscopic properties of implant surfaces play a major role in the osseous healing of dental implant. Purpose of study: This study was undertaken to evaluate bone response of ion beam-assisted deposition(IBAD) of hydroxyapatite(HA) on the anodized surface of subperiosteal titanium implants. Material and methods: Two half doughnut shape subperiosteal titanium implants were made. The control group was treated with Anodized surface treatment and the test group was treated with IBAD of HA on control surface. Then two implants inserted together into the subperiosteum of the skull of 30 rats and histological response around implant was observed under LM(light microscope) and TEM(transmission electron microscope) on 4th, 6th and 8th week. Results: Many subperiosteal implants were fixed with fibrous connective tissue not with bony tissue because of weak primary stability. The control group observed poor bone response and there was no significant change at any observation time. However the test group showed advanced bone formation and showed direct bone to implant contact under LM on 8th week. The test group observed much rER in the cell of osteoblast but the control group showed little rER under TEM. Conclusions: The test group showed better bone formation than the control group at the condition of weak primary stability. With these results IBAD surface treatment method on Anodized surface, may be good effect at the condition of weak primary stability.

Planning and Dosimetric Study of Volumetric Modulated Arc Based Hypofractionated Stereotactic Radiotherapy for Acoustic Schwannoma - 6MV Flattening Filter Free Photon Beam

  • Swamy, Shanmugam Thirumalai;Radha, Chandrasekaran Anu;Arun, Gandhi;Kathirvel, Murugesan;Subramanian, Sai
    • Asian Pacific Journal of Cancer Prevention
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    • v.16 no.12
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    • pp.5019-5024
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    • 2015
  • Background: The purpose of this study was to assess the dosimetric and clinical feasibility of volumetric modulated arc based hypofractionated stereotactic radiotherapy (RapidArc) treatment for large acoustic schwannoma (AS >10cc). Materials and Methods: Ten AS patients were immobilized using BrainLab mask. They were subject to multimodality imaging (magnetic resonance and computed tomography) to contour target and organs at risk (brainstem and cochlea). Volumetric modulated arc therapy (VMAT) based stereotactic plans were optimized in Eclipse (V11) treatment planning system (TPS) using progressive resolution optimizer-III and final dose calculations were performed using analytical anisotropic algorithm with 1.5 mm grid resolution. All AS presented in this study were treated with VMAT based HSRT to a total dose of 25Gy in 5 fractions (5fractions/week). VMAT plan contains 2-4 non-coplanar arcs. Treatment planning was performed to achieve at least 99% of PTV volume (D99) receives 100% of prescription dose (25Gy), while dose to OAR's were kept below the tolerance limits. Dose-volume histograms (DVH) were analyzed to assess plan quality. Treatments were delivered using upgraded 6 MV un-flattened photon beam (FFF) from Clinac-iX machine. Extensive pretreatment quality assurance measurements were carried out to report on quality of delivery. Point dosimetry was performed using three different detectors, which includes CC13 ion-chamber, Exradin A14 ion-chamber and Exradin W1 plastic scintillator detector (PSD) which have measuring volume of $0.13cm^3$, $0.009cm^3$ and $0.002cm^3$ respectively. Results: Average PTV volume of AS was 11.3cc (${\pm}4.8$), and located in eloquent areas. VMAT plans provided complete PTV coverage with average conformity index of 1.06 (${\pm}0.05$). OAR's dose were kept below tolerance limit recommend by American Association of Physicist in Medicine task group-101(brainstem $V_{0.5cc}$ < 23Gy, cochlea maximum < 25Gy and Optic pathway <25Gy). PSD resulted in superior dosimetric accuracy compared with other two detectors (p=0.021 for PSD.

Fabrication of UV imprint stamp using diamond-like carbon coating technology (Diamond-like carbon 코팅기술을 사용한 UV-임프린트 스탬프 제작)

  • JEONG JUN-HO;KIM KI-DON;SIM YOUNG-SUK;CHOI DAE-GEUN;CHOI JUNHYUK;LEE EUNG-SUG;LIM TAE-WOO;PARK SANG-HU;YANG DONG-YOL;CHA NAM-GOO;PARK JIN-GOO
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 2005.10a
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    • pp.167-170
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    • 2005
  • The two-dimensional (2D) and three-dimensional (3D) diamond-like carbon (DLC) stamps for ultraviolet nanoimprint lithography (UV-NIL) were fabricated using two kinds of methods, which were a DLC coating process followed by the focused ion beam (FIB) lithography and the two-photon polymerization (TPP) patterning followed by nano-scale thick DLC coating. We fabricated 70 nm deep lines with a width of 100 nm and 70 nm deep lines with a width of 150 nm on 100 nm thick DLC layers coated on quartz substrates using the FIB lithography. 200 nm wide lines, 3D rings with a diameter of $1.35\;{\mu}m$ and a height of $1.97\;{\mu}m$, and a 3D cone with a bottom diameter of $2.88\;{\mu}m$ and a height of $1.97\;{\mu}m$ were successfully fabricated using the TPP patterning and DLC coating process. The wafers were successfully printed on an UV-NIL using the DLC stamp. We could see the excellent correlation between the dimensions of features of stamp and the corresponding imprinted features.

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Nanowire Patterning for Biomedical Applications

  • Yun, Young-Sik;Lee, Jun-Young;Yeo, Jong-Souk
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.382-382
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    • 2012
  • Nanostructures have a larger surface/volume ratio as well as unique mechanical, physical, chemical properties compared to existing bulk materials. Materials for biomedical implants require a good biocompatibility to provide a rapid recovery following surgical procedure and a stabilization of the region where the implants have been inserted. The biocompatibility is evaluated by the degree of the interaction between the implant materials and the cells around the implants. Recent researches on this topic focus on utilizing the characteristics of the nanostructures to improve the biocompatibility. Several studies suggest that the degree of the interaction is varied by the relative size of the nanostructures and cells, and the morphology of the surface of the implant [1, 2]. In this paper, we fabricate the nanowires on the Ti substrate for better biocompatible implants and other biomedical applications such as artificial internal organ, tissue engineered biomaterials, or implantable nano-medical devices. Nanowires are fabricated with two methods: first, nanowire arrays are patterned on the surface using e-beam lithography. Then, the nanowires are further defined with deep reactive ion etching (RIE). The other method is self-assembly based on vapor-liquid-solid (VLS) mechanism using Sn as metal-catalyst. Sn nanoparticle solutions are used in various concentrations to fabricate the nanowires with different pitches. Fabricated nanowries are characterized using scanning electron microscopy (SEM), x-ray diffraction (XRD), and high resolution transmission electron microscopy (TEM). Tthe biocompatibility of the nanowires will further be investigated.

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An analysis on the impurities generated by discharge in AC plasma display panel (교류 플라즈마 표시기 방전 시 발생하는 불순물 종의 분석)

  • 김광남;김중균;양진호;황기웅;이석현
    • Journal of the Korean Vacuum Society
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    • v.8 no.4A
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    • pp.482-489
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    • 1999
  • AC PDP(P1asma Display Pane1)s use the mixture of inert gases to generate a discharge inside the display pixels. Impurities such as CO, $CO_2$ and OH inside discharge region may deteriorate the characteristics of PDP operation during long life time of PDP. Electro-negative gas such as CO can cause the sustain pulse amplitude to rise by attaching electrons which will play an important role in the earlier stage of the discharge. MgO film is used to protect the dielectric layer in AC PDP, and is in contact with the free space of display pixel where it is filled with the inert gas mixture. So, MgO film can be a main source of impurities. In this experiment, we observed the change of impurity generation of various MgO films which were deposited by different methods, by using QMS. (quadropole mass spectrometer) The main impurites were $H_2$, CO and $CO_2$. And with the comparison of the TPD (temperature programmed desorption) result, it can be understood that impurity gases are generated by sputtering of MgO surface not by outgassing. Deposition method had effects on the characteristics of the impurity generation. The MgO film manufactured by e-beam evaporation generated more amount of impurity gases than the MgO films manufactured by sputtering or ion-plating. And also heat treatment of MgO film after deposition decreased the magnitude of impurity gas generation.

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RRT Study for the Quantitative Analysis of Boron in Silicon (실리콘에 도핑된 붕소의 정량분석에 대한 공동분석연구)

  • 김경중;김현경;문대원;홍태은;정칠성;김이경;김재남;임철호;김정호
    • Journal of the Korean Vacuum Society
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    • v.11 no.4
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    • pp.218-224
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    • 2002
  • A domestic round robin test(RRT) for the quantitative analysis of minor impurities was performed by a standard procedure and standard reference material. The certified reference material(CRM)s for B-doped Si thin film and analysis specimens and the analysis specimens were prepared by an ion beam sputter deposition method. These samples were certified by inductively coupled plasma mass spectrometry(ICP-MS) with isotope dilution method which il one of the most quantitative methods in chemical analysis. By using an international standard procedure(ISO/DIS-l4237) for the quantitative analysis of B in Si by SIMS, a domestic RRT was performed for these specimens. Although only a few laboratories participated in this RRT, the average B concentration well agreed with the certified value within 2% error.

Crystallization Behavior and Electrical Properties of BNN Thin Films prepared by IBASD Methods (IBASD법으로 제조된 BNN 박막의 결정화 및 전기적 특성)

  • Woo, Dong-Chan;Jeong, Seong-Won;Lee, Hee-Young;Cho, Sang-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.11a
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    • pp.489-493
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    • 2004
  • [ $Ba_2NaNb_5O_{15}$ ]은 orthorhombic tungsten bronze 결정구조를 갖는 강유전체로서, 단결정의 경우 $LiNbO_3$에 비해 우수한 비선형 전광계수 값을 나타내는 것으로 알려져 있으며, 또한 주목할만한 초전, 압전, 강유전특성을 나타내고 있다. 본 연구에서는 다른 강유전체박막에 비하여 상대적으로 연구가 덜 이루어진 BNN 박막을 세라믹 타겟을 사용하여 이온빔 보조 증착법을 사용하여 제조하였으며, $Ar/O_2$ 분위기에서 증착된 BNN 박막에 대한 결정화 및 배향 특성을 고찰하였고, 이에 따른 전기적 특성의 변화를 살펴보았다. 연구에 사용된 기판은 $Pt(100)/TiO_2/SiO_2/Si(100)$이었으며, 이온빔 보조 증착법에서 보조 이온빔의 에너지를 $0{\sim}400eV$로 변화 시키며 BNN 박막을 증착한 후, 열처리하였다. BNN 박막의 전기적 특성은 MFM 박막 커패시터의 형태로 제조하여 강유전 특성에 대해 살펴보았다.

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Progress in research and development for REBCO coated conductors by reactive co-evaporation

  • Oh, S.S.;Kim, H.S.;Ha, H.S.;Ko, R.K.;Ha, D.W.;Lee, H.;Moon, S.H.;Yoo, S.I.
    • Progress in Superconductivity and Cryogenics
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    • v.15 no.4
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    • pp.1-5
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    • 2013
  • This paper reviews recent progress in research and development (R&D) of reactive co-evaporation for high performance REBCO coated conductors in Korea. Two types of reactive co-evaporation methods were developed for the deposition of SmBCO and GdBCO superconducting layers respectively on the IBAD (Ion Beam Assisted Deposition)-MgO template in the Korean coated conductor project. Batch type reactive co-evaporation equipment and its processing were developed for SmBCO coated conductors at Korea Electrotechnology Research Institute (KERI) in conjunction with the Korea Advanced Institute of Science and Technology (KAIST), and a very high critical current exceeding 1,000 A/cm at 77 K in the self field was achieved through the optimization of deposition parameters. Reel-to-reel type reactive co-evaporation processing with a high conversion rate was also developed, while long length GdBCO coated conductors have been routinely produced by SuNAM Co. The minimum critical current of 422 A/cm-w at 77 K in self field was confirmed for 1 km-long GdBCO tape.

Microstrcture and Mechanical Properties of HfN Films Deposited by dc and Inductively Coupled Plasma Assisted Magnetron Sputtering (직류 및 유도결합 플라즈마 마그네트론 스퍼터링법으로 제조된 HfN 코팅막의 미세구조 및 기계적 물성연구)

  • Jang, Hoon;Chun, Sung-Yong
    • Journal of the Korean institute of surface engineering
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    • v.53 no.2
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    • pp.67-71
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    • 2020
  • For deposition technology using plasma, it plays an important role in improving film deposited with high ionization rate through high density plasma. Various deposition methods such as high-power impulse magnetron sputtering and ion-beam sputtering have been developed for physical vapor deposition technology and are still being studied. In this study, it is intended to control plasma using inductive coupled plasma (ICP) antennas and use properties to improve the properties of Hafnium nitride (HfN) films using ICP assisted magnetron sputtering (ICPMS). HfN film deposited using ICPMS showed a finer grain sizes, denser microstructure and better mechanical properties as ICP power increases. The best mechanical properties such as nanoindentation hardness of 47 GPa and Young's modulus of 401 GPa was obtained from HfN film deposited using ICPMS at ICP power of 200 W.

The Observation of Intermetallic Compound Microstructure Under Sn Whisker in Lead-free Finish

  • Yu, Chong-Hee
    • Journal of the Microelectronics and Packaging Society
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    • v.16 no.2
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    • pp.27-31
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    • 2009
  • Sn whiskers can grow from the pure Sn and high Sn-based finish and cause the electrical shorts and failures. Even with the wealth of information on whiskers, we have neither the clear understanding of whisker growth nor methods for its prevention. In this study, the whisker grain roots which connected with intermetallic layer were analyzed by high-resolution transmission electron microscopy (HR-TEM). In the Sn-Cu plated leadframe (LF) that was stored at ambient condition for 540 days, filament-shaped whiskers were grown on the Sn-plated surface and ${\eta}'-Cu_6Sn_5$ precipitates were widely distributed along the grain boundaries at the Sn matrix. The measured of the lattice fringes at the ${\eta}'-Cu_6Sn_5$ was $4.71{\AA}$ at the coarse grain and $2.91{\AA}$ at the fine grain. The $Cu_3Sn$ which generates the tensile stresses was not observed. The formation of $Cu_6Sn_5$ precipitates and intermetallic layer were strongly related to whisker growth, but, the whisker growth tendency does not closely relate with the geometric morphology of irregularly grown intermetallic compound (lMC).

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