• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.7 no.2
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• pp.62-69
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• 2008

This paper proposes linearization technique that the linearity is improved by controlling IMD between the drive stage and the output stage. From the experimental results of W-CDMA 4FA input signal, this amplifier has ACLR of -48dBc@5MHz offset at 50W average power. Proposed linearization technique provides predistortion effect for using drive amplifier without additional circuit, which is the significant in this paper that it makes up for the weak point of analog predistortion method and feedforward method.

• Journal of IKEEE
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• v.4 no.2 s.7
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• pp.241-248
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• 2000

A linear power amplifier is particular emphasized on the CDMA system using a linear modulation scheme, because intermodulation distortion which cause adjacent channel interference and co channel interference is mostly generated in a nonlinear power amplifier. In this paper, a new type of linearization technique proposed. It is presented that balanced MESFET predistortion linearizer added. Experimental result are present for Korea PCS(Personal Communication Service) frequency band. The implemented linearizer is applied to a 30dBm class A power amplifier for simulation Performance. The predistortion linearizer improves the 1dB compression point of the HPA about 2dBm, and intermoudulation distortion about 12.5dBc.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.5
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• pp.686-693
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• 2001

In this paper, a new carrier complex power series which represents nonlinear transfer function of high power amplifier is derived. Using this transfer function, the nonlinear transfer function of predistortive circuit for linearizing the distortion effect of a HPA(High Power Amplifier) is derived and fabricated. A measured gain and $P_{1dB}$ of the fabricated HPA in IMT-2000 basestation transmitting band are 34.06 dB and 35.4 dBm. The predistortive circuit using inverse carrier complex power series is fabricated and operated with HPA. The predistortive HPA improves C/I(Carrier to Intermodulation) ratio of HPA by 17.01 dB(@Pout=25.43 dBm/tone) with 2-tone at 2.1375 GHz and 2.1425 GHz.

• Journal of electromagnetic engineering and science
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• v.1 no.2
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• pp.146-155
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• 2001

This paper describes the improvement in performance of power amplifiers by Defected Ground Structure (DGS) for several operating classes. Due to its excellent capability of harmonic rejection, DGS plays a threat role in improving the main performance of power amplifiers such as output power, power added efficiency, harmonic rejection, and intermodulation distortion (IMD3). In order to verify the improvement in performance of power amplifiers by DGS, measured data for a 30 Watts power amplifier with and without DGS attached under several operating classes are illustrated and compared. The principle of the performance improvement is described with simple Volterra nonlinear transfer functions. Also, the measured performance far two cases, i.e. with and without DGS, and the quantities of improvement fur the various operating classes are compared and discussed.

• The Journal of the Korea institute of electronic communication sciences
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• v.7 no.2
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• pp.221-226
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• 2012

In this paper, wideband two-stage amplification stage was designed, fabricated and evaluated. The proposed amplification stage with a novel gain control method have a high gain, low noise and high linearity performance. It is consisted of common emitter amplifier as the first stage, cascode gain control amplifier as second stage and power detector which sense the received signal strength. The proposed amplification stage shows a total gain of 29 dB~37 dB, noise fiugre of 1.5 dB at operating band and high linearity performance as the IMD (third intermodulation distortion) level is below the noise level of the measurement equipment at the control voltage 2.0 V generated from power detector under the strong electric field condition.

• Journal of Electrical Engineering and Technology
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• v.3 no.4
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• pp.566-570
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• 2008

Vertical nanowire SGFETs(Surrounding Gate Field Effect Transistors) provide full gate control over the channel to eliminate short channel effects. This paper presents design and characterization of a differential pair amplifier using NMOS and PMOS SGFETs with a 10nm channel length and a 2nm channel radius. The amplifier dissipates $5{\mu}W$ power and provides 5THz bandwidth with a voltage gain of 16, a linear output voltage swing of 0.5V, and a distortion better than 3% from a 1.8V power supply and a 20aF capacitive load. The 2nd and 3rd order harmonic distortions of the amplifier are -40dBm and -52dBm, respectively, and the 3rd order intermodulation is -24dBm for a two-tone input signal with 10mV amplitude and 10GHz frequency spacing. All these parameters indicate that vertical nanowire surrounding gate transistors are promising candidates for the next generation high speed analog and VLSI technologies.

• Journal of Advanced Navigation Technology
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• v.3 no.1
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• pp.52-59
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• 1999

Digital microwave wideband receiver including linear amplifier, analog-to-digital converter(ADC) and digital signal processor is able to analyze its performance using sensitivity and dynamic range of system. Determination of gain, third-order intermodulation products and ADC characteristics and design criteria for the linear amplifier chain is essential problem for sensitive and dynamic range. Also, if there are two signals with frequencies very close, digital signal processor must be able to separate the two signals. In this paper, we measured dynamic range as gain was changed and determined gain value for the proper sensitivity and dynamic range and high resolution spectrum estimation was used to separate two close signals.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.10a
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• pp.53-56
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• 2003

A linear power amplifier is particularly emphasized on the CDMA system using a linear modulation scheme, because IMD which cause adjacent channel interference and co channel Interference is mostly generated in a nonlinear power amplifier. In this paper, a new type of linearization technique proposed. It is presented that balanced MESFET predistortion linearizer added. Experimental result are present for Korea PCS frequency band. The implemented linearizer is applied to a 30dBm class. A power amplifier for simulation performance. Two-tone signals at 1850 MHz and 1851.23 MHz are injected into the main power amplifier. The main power amplifier with a 12.1dB gain and a P1dB of 30 dBm(two-tone) was utlized. The reduction of IMD is around 22dB.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.9 no.2
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• pp.226-237
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• 1998

In recent SATCOM systems, transparent transponders are widely used. The transponder is, however, the most vulnerable part in SATCOM systems against jamming interference. All signals within the transponder bandwidth are frequency-converted and retransmitted with IM(intermodulation) products. In this paper, the method is proposed that makes the SJR(Signal-to-Jammer ratio) better. The bandwidth spreading of the user signal can reduce the jammers effects. The geostationary satellite system is modeled to simulate and to certificate the capability of suppression of jammers by DSSS. If signal is partially-overlapped by jammer and PG(processing gain) is 16.9 [dB] for 2ASK jammer and about 16.8 [dB] for QPSK jammer, when BER is $10^{-3}$.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.7 s.361
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• pp.12-16
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• 2007

In this paper, The 3rd-IMD of class-F power amplifier is improved using CMRC structure in order to remove the parasitic End harmonic at the output load of class-F power amplifier. The total size is very small more than class-F power amplifier using PBG. (Photonicband Gap) structure during improved 3rd-IMD characteristic performance.