• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2000년도 춘계학술대회 논문집
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• pp.854-857
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• 2000

Chemical Mechanical Polishing(CMP) has been accepted as one of the essential processes for VLSI fabrication. However, as the polishing process continues, pad pores get to be glazed by polishing residues, which hinder the supply of new slurry. This defect makes removal rate decrease with a number of polished wafer and the desired within-chip planarity, within wafer and wafer-to-wafer nonuniformity are unable to be achieved. So, pad conditioning is essential to overcome this defect. The eletroplated diamond grit disk is used as the conventional conditioner, And alumina long fiber, the .jet power of high pressure deionized water and vacuum compression are under investigation. But, these methods have the defects like scratches on wafer surface by out of diamond grits, subsidences of pad pores by over-conditioning, and the limits of conditioning effect. To improve these conditioning methods. this paper presents the Characteristics of Ultrasonic conditioning aided by cavitation.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.192.1-192.1
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• 2014

We report solution-processed organic trilayer solar cells consisting of poly (3-hexylthiophene) (P3HT), a conjugated polyelectrolyte (CPE) and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM), wherein the effect CPE layer thickness on device properties was investigated. The current-voltage characteristics under illumination and dark as well as photoluminescence were characterized using various concentrations (0.02, 0.1, and 0.3wt%) of to deposit the CPE interlayer between the donor and acceptor layers. We also investigated the influence of molecular dipole moments in the trilayer solar cells by external stimuli. These results provide an experimental approach for investigating the influence of interfacial dipoles on solar cell parameters when placed between the donor and acceptor and allow us to obtaining fundamental information about the donor/acceptor interface in organic solar cells.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.2020-2022
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• 2002

SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS fileds because of its application possibility in harsh environements. This paper presents on pre-bonding according to HF pre-treatment conditions in SiC wafer direct bonding using PECVD oxide. The PECVD oxide was characterized by XPS and AFM, respectively. The characteristics of bonded sample were measured under different bonding conditions of HF concentration and applied pressure, respectively. The bonding strength was evaluated by tensile strength method. Components existed in the interlayer were analyzed by using FT-IR. The bond strength depends on the HF pre-treatment condition before pre-bonding (Min : 5.3 kgf/$cm^2{\sim}$ Max : 15.5 kgf/$cm^2$).

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2014년도 추계학술대회 논문집
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• pp.167-167
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• 2014

Graphite is used as a negative electrode active material of Lithium ion capacitor (LIC). At the cathod, electrostatic reaction of EDLC is a very high reaction rate compared to a oxidaion reduction reaction. When the graphite was expanded that the length between the sheet, the intercalation of lithium ions is smoothed. And thus, the power density increases. By measuring the XRD, it was confirmed that the increase in interlayer spacing of graphite. And by measuring an electrochemical reactionin Lithium Ion Battery (LIB), it was confirmed the tendency of power density is improved.

• Bulletin of the Korean Chemical Society
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• 제23권12호
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• pp.1801-1805
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• 2002

The graphite intercalation compounds(GIC) were prepared by a dry process that led to the intercalation from the direct reaction of gaseous $SO_3$ with flake type graphite. The basal spacing of the GIC was increased from 8.3 ${\AA}$ to 12 in the gallery height. The ejection of interlayer $SO_3$ molecules by the heating for 1 minute at $950^{\circ}C$ resulted in an exfoliated graphite (EG) with surprisingly high expansion in the direction of c-axis. The expansion ratios of the exfoliated graphites were increased greatly between 220 times and 400 times compared to the original graphite particles, and the bulk density was range of 0.0053 to 0.01 $g/cm^3$, depending on reaction time. The pore size distribution of exfoliated graphite was in the range of $10-170{\mu}m$, which exhibites both mesoporosity and macroporosities. This result indicates that the direct reaction of graphite paricles with gaseous $SO_3$ can be proposed as an another route for the exfoliated graphite having excellent physical properties.

• 한국진공학회지
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• 제7권s1호
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• pp.134-139
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• 1998

Amorphous fluorocarbon (a-C:F) is of interest for low dielectric interlayer material, but in this work we applied this material to FED field emitter. N-doped a-C:F films were deposited by inductively coupled plasma chemical vapor deposition (ICPCVD). The Raman spectra were measured to study the film structure and inter-band optical absorption coefficients were measured using Perkin-Elmer UV-VIS-IR spectrophotometer and optical band gap was obtained using Tauc's plot. XPS spectrum and AFM image were investigated to study bond structure and surface morphology. Current-electric field(I-E) characteristic of the film was measured for the characterization of electron emission properties. The optimum doping concentration was found to be [N2]/[CF4]=9% in the gas phase. The turn-on field and the emission current density at $[N_2]/[CF_4]$=9% were found to be 7.34V/$\mu\textrm{m}$ and 16 $\mu\textrm{A}/\textrm{cm}^2$ at 12.8V/$\mu\textrm{m}$, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1055-1055
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• 2009

The mobility of charge carriers has been investigated in the pristine and phosphorescent materials doped host materials using time-of-flight photoconductivity technique. The field and temperature dependences of the mobility were analyzed with the Gaussian disorder model. Based on these results, we optimized white organic light emitting diodes (WOLEDs) consisting of multi-emitting layers doped with phosphorescent and fluorescent dopants. Especially, we studied the effect of each emitter position and an interlayer on the device characteristics of WOLEDs.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.370-373
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• 1999

Si direct bonding (SDB) technology is very attractive for both Si-on-insulator(SOI) electric devices and MEMS applications because of its stress free structure and stability. This paper presents on- pre treatment conditions in Si wafer direct bonding, The paper resents on pre-bonding according to HF pre-treatment conditions in Si wafer direct bonding. The characteristics of bonded sample were measured under different bonding conditions of HF concentration, applied pressure and annealing temperature(200~ 100$0^{\circ}C$) after pre-bonding. The bonding strength was evaluated by tensile strength method. The bonded interface and the void were analyzed by using SEM and IR camera, respectively, Components existed in the interlayer were analyzed by using FT-IR. The bond strength depends on the HF pre-treatment condition before pre-bonding(Min 2.4kgf/$\textrm{cm}^2$~ Max : 14.kgf/$\textrm{cm}^2$)

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.209-212
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• 2001

Polyimide(PI) films have been considered as the interlayer dielectric materials due to low dielectric constant, low water absorption, high gap-fill and planarization capability. The PI film was etched with using inductively coupled plasma (ICP). The etching characteristics such as etch rate and selectivity were evaluated to gas mixing ratio. High etch rate was 8300$\AA$/min and vertical profile was approximately acquired 90$^{\circ}$ at CF$_4$/(CF$_4$+O$_2$) of 0.2. The selectivies of polyimide to PR and SiO$_2$ were 1.2, 5.9, respectively. The etching profiles of PI films with an aluminum pattern were measured by a scanning electron microscope (SEM). The chemical states on the PI film surface were investigated by x-ray photoelectron spectroscopy (XPS). Radical densities of oxygen and fluorine in different gas mixing ratio of 07CF4 were investigated by optical emission spectrometer (OES).

• Structural Engineering and Mechanics
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• 제67권2호
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• pp.175-183
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• 2018

This research deals with the wave dispersion analysis of functionally graded double-layered nanobeam systems (FG-DNBSs) considering the piezoelectric effect based on nonlocal strain gradient theory. The nanobeam is modeled via Euler-Bernoulli beam theory. Material properties are considered to change gradually along the nanobeams' thickness on the basis of the rule of mixture. By implementing a Hamiltonian approach, the Euler-Lagrange equations of piezoelectric FG-DNBSs are obtained. Furthermore, applying an analytical solution, the dispersion relations of smart FG-DNBSs are derived by solving an eigenvalue problem. The effects of various parameters such as nonlocality, length scale parameter, interlayer stiffness, applied electric voltage, relative motions and gradient index on the wave dispersion characteristics of nanoscale beam have been investigated. Also, validity of reported results is proven in the framework of a diagram showing the convergence of this model's curve with that of a previous published attempt.