• Journal of the Microelectronics and Packaging Society
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• v.7 no.1
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• pp.7-12
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• 2000

As an essential technology for the FED, VFD and PDP packaging having merits of no glass frit and no glass tube usage, two sodalime glass substrates were electrostatically-bonded in a vacuum environment, and the bond properties were compared with the case of bonding in atmosphere. The glass wafer pairs bonded in vacuum using a-Si interlayer had a relatively lower bond strength than the ones bonded in atmosphere under same bonding conditions (temperature and voltage). And the bond strength was increased in the case of oxygen ambient. Through the XPS and SIMS analyses fur the surface region of a-silicon and bulk glass, it might be concluded that the lower bonding strength was originated from the inactive silicon oxide growth occurred during the electrostatic bonding process due to oxygen deficiency in vacuum.

• Korean Journal of Materials Research
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• v.34 no.3
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• pp.125-137
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• 2024

Composite laminates are used in a wide range of applications including defense, automotive, aviation and aerospace, marine, wind energy, and recreational sporting goods. These composite beams still exhibit problems such as buckling, local deformations, and interlaminar delamination. To overcome these drawbacks, a novel viscoelastic autoclave bonding with tapered epoxy reinforcement polyurethane films is proposed. In existing laminates, compression face wrinkling and interlaminar delamination is caused in the sandwich beam. The unique viscoelastic autoclave spunbond interlayer bonding is designed to prevent face wrinkling and absorb and distribute stresses induced by external loads, thereby eliminating interlaminar delamination in the sandwich beam. Also, the existing special reinforcement causes stress concentrations, and the core is not effectively connected, which directly affects the stiffness of the beam. To address this, a novel tapered epoxy polyurethane reinforcement adhesive film is proposed, whose reinforcement thickness gradually tapers as it enters the core material. This minimizes stress concentrations at the interface, preventing excessive adhesive squeeze-out during the bonding process, and improves the stiffness of the beam. Results indicate the proposed model avoids the formation of micro cracks, interlaminar delamination, buckling, and local deformations, and effectively improves the stiffness of the beam.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.370-373
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• 1999

Si direct bonding (SDB) technology is very attractive for both Si-on-insulator(SOI) electric devices and MEMS applications because of its stress free structure and stability. This paper presents on- pre treatment conditions in Si wafer direct bonding, The paper resents on pre-bonding according to HF pre-treatment conditions in Si wafer direct bonding. The characteristics of bonded sample were measured under different bonding conditions of HF concentration, applied pressure and annealing temperature(200~ 100$0^{\circ}C$) after pre-bonding. The bonding strength was evaluated by tensile strength method. The bonded interface and the void were analyzed by using SEM and IR camera, respectively, Components existed in the interlayer were analyzed by using FT-IR. The bond strength depends on the HF pre-treatment condition before pre-bonding(Min 2.4kgf/$\textrm{cm}^2$~ Max : 14.kgf/$\textrm{cm}^2$)

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.2020-2022
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• 2002

SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS fileds because of its application possibility in harsh environements. This paper presents on pre-bonding according to HF pre-treatment conditions in SiC wafer direct bonding using PECVD oxide. The PECVD oxide was characterized by XPS and AFM, respectively. The characteristics of bonded sample were measured under different bonding conditions of HF concentration and applied pressure, respectively. The bonding strength was evaluated by tensile strength method. Components existed in the interlayer were analyzed by using FT-IR. The bond strength depends on the HF pre-treatment condition before pre-bonding (Min : 5.3 kgf/$cm^2{\sim}$ Max : 15.5 kgf/$cm^2$).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.447-450
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• 2001

Abstract-Si direct bonding(SDB) technology is very attractive for both Si-on-insulator(SOI) electric devices and MEMS applications because of its stress free structure and stability. This paper presents on pre-bonding according to HF pre-treatment conditions in Si wafer direct bonding. The characteristics of bonded sample were measured under different bonding conditions of HF concentration, and applied pressure. The bonding strength was evaluated by tensile strength method. The bonded interface and the void were analyzed by using SEM and IR camera, respectively. Components existed in the interlayer were analysed by using FT-lR. The bond strength depends on the HF pre-treatment condition before pre-bonding (Min : 2.4kgf/cm$^2$∼Max : 14.9kgf/cm$^2$).

• Journal of Powder Materials
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• v.8 no.4
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• pp.258-267
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• 2001

In this work, the conventional transient liquid phase(TLP) bonding was modified. An attempt was made of using a liquid phase sintered alloy, which will be a liquid phase coexisting with a solid phase at the bonding temperature, as an interlayer for bonding metals. With an aim of revealing the fundamental features of this modified TLP bonding, the kinetics concerned with the growth of solid particles and the isothermal solidification process in Fe-1.16wt%B and Fe-4.5wt%P interlayers for the bonding pure iron, as well as the morphological change of the solid particle, were investigated.

• Journal of Welding and Joining
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• v.15 no.2
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• pp.43-53
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• 1997

The complete joining method for dissimilar press punch materials and its real-time evaluation method is not available at present. Brazing method has been used for joining them, but it is known that the welded joint by the brazing has the lower bonding efficiency and reliability than the diffusion welding. The friction welding with a diffusion mechanism in bonding was applied in this study. This work was carried out to determine the proper friction welding conditions and to analyze mechanical properties of friction welded joints of sintered carbide tool materials (SKNM50 for the blade part of press punch) to alloy steel (SCM440 for the shank part of press punch) using aluminum (A6061 for the interlayer material) as an insert material between the sintered carbide tool materials and the alloy steel. In addition, acoustic emission test was carried out during friction welding to evaluate the weld quality.

• Journal of the Korean Society of Safety
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• v.32 no.1
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• pp.9-14
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• 2017

Diffusion bonding is a technique that has the ability to join materials with minimum change in joint micro-structure and deformation of the component. The quality of the joints produced was examined by metallurgical characterization and the joint micro-structure developed across the diffusion bonding was related to changes in mechanical properties as a function of the bonding time. An increase in bonding time also resulted in an increase in the micro-hardness of the joint interface from 55 VHN to 180 VHN, The increase in hardness was attributed to the formation of intermetallic compounds which increased in concentration as bonding time increased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.164-167
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• 2002

SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS applications because of its application possibility in harsh environments. This paper presents on pre-bonding according to HF pre-treatment conditions in SiC wafer direct bonding using PECVD oxide. The characteristics of bonded sample were measured under different bonding conditions of HF concentration, and applied pressure. The 3C-SiC epitaxial films grown on Si(100) were characterized by AFM and XPS, respectively. The bonding strength was evaluated by tensile strength method. Components existed in the interlayer were analyzed by using FT-IR. The bond strength depends on the HF pre-treatment condition before pre-bonding (Min : 5.3 kgf/$\textrm{cm}^2$∼Max : 15.5 kgf/$\textrm{cm}^2$).

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2000.04a
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• pp.26-26
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• 2000