• Corrosion Science and Technology
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• 제22권4호
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• pp.287-296
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• 2023

Li-ion batteries have been gaining increasing importance, driven by the growing utilization of renewable energy and the expansion of electric vehicles. To meet market demands, it is essential to ensure high energy density and battery safety. All-solid-state batteries (ASSBs) have attracted significant attention as a potential solution. Among the advantages, they operate with an ion-conductive solid electrolyte instead of a liquid electrolyte therefore significantly reducing the risk of fire. In addition, by using high-capacity alternative electrode materials, ASSBs offer a promising opportunity to enhance energy density, making them highly desirable in the automotive and secondary battery industries. In ASSBs, Li metal can be used as the anode, providing a high theoretical capacity (3860 mAh/g). However, challenges related to the high interfacial resistance between Li metal and solid electrolytes and those concerning material degradation during charge-discharge cycles need to be addressed for the successful commercialization of ASSBs. This review introduces and discusses the interfacial reactions between Li metal and solid electrolytes, along with research cases aiming to improve these interactions. Additionally, future development directions in this field are explored.

• Transactions on Electrical and Electronic Materials
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• 제15권6호
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• pp.328-332
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• 2014

Thin film transistors (TFTs) with an amorphous silicon zinc tin oxide (a-2SZTO) channel layer have been fabricated using an RF magnetron sputtering system. The effect of the change of excitation electron on the variation of the total interfacial trap states of a-2SZTO systems was investigated depending on sputtering power, since the interfacial state could be changed by changing sputtering power. It is well known that Si can effectively reduce the generation of the oxygen vacancies. However, The a-2SZTO systems of ZTO doped with 2 wt% Si could be degraded because the Si peripheral electron belonging to a p-orbital affects the amorphous zinc tin oxide (a-ZTO) TFTs of the s-orbital overlap structure. We fabricated amorphous 2 wt% Si-doped ZnSnO (a-2SZTO) TFTs using an RF magnetron sputtering system. The a-2SZTO TFTs show an improvement of the electrical property with increasing power. The a-2SZTO TFTs fabricated at a power of 30 W showed many of the total interfacial trap states. The a-2SZTO TFTs at a power of 30 W showed poor electrical property. However, at 50 W power, the total interfacial trap states showed improvement. In addition, the improved total interfacial states affected the thermal stress of a-2SZTO TFTs. Therefore, a-2SZTO TFTs fabricated at 50 W power showed a relatively small shift of threshold voltage. Similarly, the activation energy of a-2SZTO TFTs fabricated at 50 W power exhibits a relatively large falling rate (0.0475 eV/V) with a relatively high activation energy, which means that the a-2SZTO TFTs fabricated at 50 W power has a relatively lower trap density than other power cases. As a result, the electrical characteristics of a-2SZTO TFTs fabricated at a sputtering power of 50 W are enhanced. The TFTs fabricated by rf sputter should be carefully optimized to provide better stability for a-2SZTO in terms of the sputtering power, which is closely related to the interfacial trap states.

• Nuclear Engineering and Technology
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• 제52권6호
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• pp.1243-1251
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• 2020

Irradiation-induced damage of binderless nanoporous-isotropic graphite (NPIG) prepared by isostatic pressing of mesophase carbon microspheres for molten salt reactor was investigated by 3.0 MeV He⁺ irradiation at room temperature and high temperature of 600 ℃, and IG-110 was used as the comparation. SEM, TEM, X-ray diffraction and Raman spectrum are used to characterize the irradiation effect and the influence of temperature on graphite radiation damage. After irradiation at room temperature, the surface morphology is rougher, the increase of defect clusters makes atom flour bend, the layer spacing increases, and the catalytic graphitization phenomenon of NPIG is observed. However, the density of defects in high temperature environment decreases and other changes are not obvious. Mechanical properties also change due to changes in defects. In addition, SEM and Raman spectra of the cross section show that cracks appear in the depth range of the maximum irradiation dose, and the defect density increases with the increase of irradiation dose.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.169-169
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• 2014

Interfacial electronic structure of bathocuproine and Al was investigated using in-situ photoemission spectroscopy and density functional theory (DFT) calculations. Bathocuproine is used for exciton blocking and electron transport material in organic photovoltaics and Al is typical cathode material. When thin thickness of Al was thermally evaporated on BCP, gap states were observed by ultraviolet photoemission spectroscopy. The closest gap state yielded below 0.3 eV from Fermi level. By x-ray photoemission spectroscopy, interaction of Al with nitrogen of BCP was observed. To understand the origin of gap states, DFT calculation was carried out and gap states was verified with successive calculation of interaction of Al and nitrogen of BCP. Furthermore, emergency of another state above Fermi level was observed. Remarkable reduction of electron injection barrier between Al and BCP, therefore, is possible.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.122-122
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• 2008

Recently, Metal/Alumina/Silicon-Nitride/Silicon-Oxide/Silicon (MANOS) structures are one of the most attractive candidates to realize vertical scaling of high-density NAND flash memory [1]. However, as ANO layers are miniaturized, negative and positive bias temperature instability (NBTI/PBTI), such as the flat band voltage shift, ${\Delta}V_{FB}$, the interfacial trap density increase, ${\Delta}D_{it}$, the gate leakage current, ${\Delta}I_G$. and the retention characteristics, in MONOS capacitors, becomes an important issue in terms of reliability. It is well known that tunnel oxide degradation is a result of the oxide and interfacial traps generation during FN (Fowler-Nordheim) stress [2]. Because the bias temperature stress causes an increase of both interfacial-traps and fixed oxide charge could be a factor, witch can degrade device reliability during the program and erase operation. However, few studies on NBTI/PBTI have been conducted on improving the reliability of MONOS devices. In this work, we investigate the effect of post-annealing gas on bias temperature instability (BTI), such as the flat band voltage shift, ${\Delta}V_{FB}$, the interfacial trap density shift, ${\Delta}I_G$ retention characteristics, and the gate leakage current characteristics of MANOS capacitors. MANOS samples annealed at $950^{\circ}C$ for 30 s by a rapid thermal process were treated via additional annealing in a furnace, using annealing gases $N_2$ and $N_2-H_2$ (2 % hydrogen and 98 % nitrogen mixture gases) at $450^{\circ}C$ for 30 min. MANOS samples annealed in $N_2-H_2$ ambient had the lowest flat band voltage shift, ${\Delta}V_{FB}$ = 1.09/0.63 V at the program/erase state, and the good retention characteristics, 123/84 mV/decade at the program/erase state more than the sample annealed at $N_2$ ambient.

• 산업기술연구
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• 제42권1호
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• pp.19-27
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• 2022

This review will discuss the effort to understand the interfacial reactions at the anode and cathode sides of all-solid-state batteries. Antiperovskite solid electrolytes have received increasing attention due to their low melting points and anion tunability which allow controlling microstructure and crystallographic structures of this material system. Antiperovskite solid electrolytes pave the way for the understanding relationship between critical current density and mechanical properties of solid electrolytes. Microstructure engineering of cathode materials has been introduced to mitigate the volume change of cathode materials in solid-state batteries. The hollow microstructure coupled with a robust outer oxide layer effectively mitigates both volume change and stress level of cathode materials induced by lithium insertion and extraction, thus improving the structural stability of the cathode and outer oxide layer, which results in stable cycling performance of all-solid-state batteries.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.193.2-193.2
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• 2016

We evaluate the change in defects in the oxidized SiO2 grown on 4H-SiC (0001) by plasma assisted oxidation, by comparing with that of conventional thermal oxide. In order to investigate the changes in the electronic structure and electrical characteristics of the interfacial reaction between the thin SiO2 and SiC, x-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), DFT calculation and electrical measurements were carried out. We observed that the direct plasma oxide grown at the room temperature and rapid processing time (300 s) has enhanced electrical characteristics (frequency dispersion, hysteresis and interface trap density) than conventional thermal oxide and suppressed interfacial defect state. The decrease in defect state in conduction band edge and stress-induced leakage current (SILC) clearly indicate that plasma oxidation process improves SiO2 quality due to the reduced transition layer and energetically most stable interfacial state between SiO2/SiC controlled by the interstitial C.

• Current Applied Physics
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• 제18권11호
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• pp.1212-1217
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• 2018

The electric field-induced modifications of magnetic anisotropy in CoFeB/MgO systems are studied using X-ray resonant magnetic scattering and magneto-optical Kerr effect. Voltage dependent changes of the magnetic anisotropy of -12.7 fJ/Vm and -8.32 fJ/Vm are observed for Ta/CoFeB/MgO and Hf/CoFeB/MgO systems, respectively. This implies that the interfacial perpendicular magnetic anisotropy is reduced (enhanced) when electron density is increased (decreased). X-ray resonant magnetic scattering measurements reveal that the small in-plane magnetic component of the remanent state of CoFeB/MgO systems with weak magnetic anisotropy changes depending on the applied voltage leading to modification of the magnetic anisotropy at the CoFeB/MgO interface.

• 한국전기전자재료학회논문지
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• 제24권9호
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• pp.693-696
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• 2011

Recently, amorphous oxide semiconductors (AOSs) based thin-film transistors (TFTs) have received considerable attention for application in the next generation displays industry. The research trends of AOSs based TFTs investigation have focused on the high device performance. The electrical properties of the TFTs are influenced by trap density. In particular, the threshold voltage ($V_{th}$) and subthreshold swing (SS) essentially depend on the semiconductor/gate-insulator interface trap. In this article, we investigated the effects of Ar plasma-treated $SiO_2$ insulator on the interfacial property and the device performances of amorphous indium gallium zinc oxide (a-IGZO) TFTs. We report on the improvement in interfacial characteristics between a-IGZO channel layer and gate insulator depending on Ar power in plasma process, since the change of treatment power could result in different plasma damage on the interface.

• 센서학회지
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• 제5권6호
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• pp.60-67
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• 1996

저온 remote PECVD $SiO_{2}$막을 이용하여 제조된 InSb MIS구조에서의 계면의 전기적 특성에 대하여 연구하였다. $105^{\circ}C$에서 증착시킨 $SiO_{2}$막을 이용한 MIS구조의 중간 에너지 대역폭에서의 계면상태밀도가 $1{\sim}2{\times}10^{11}\;cm^{-2}eV^{-1}$으로 평가되었다. 그러나, $105^{\circ}C$이상의 고온에서 제조된 MIS소자의 계면에는 다량의 계면준위 및 트랩 준위가 존재하였다. G-V측정으로부터 계산된 계면준위들의 시상수는 $10^{-4}{\sim}10^{-5}\;sec$였으며, 증착온도가 증가할수록 트랩밀도가 증가하여 C-V특성곡선의 이력특성이 증대되었다.