• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.581-583
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• 1993

One of the principal problems encountered in the use of fiber reinforced composites is to establish an active fiber surface to achieve maximum adhesion between resin and fiber surface. In order to improve the interface bonding, the surface of glass fiber should be treated with silane coupling agent in ordinary composite manufacturing processes. However, the price of the coupling agent is very high and in the treating process voids are formed, which decreasees electrical and mechanical strength. We want to develope new process that will overcome the disadvantage of the coupling agent and achieve maximum adhesion at the interface between resin and fiber by active plasma treatment on the glass fiber surface. In this study, we investigate the improvement of contact angle on the glass plate surface as the first step in developing new GFRP.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.370-373
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• 1999

Si direct bonding (SDB) technology is very attractive for both Si-on-insulator(SOI) electric devices and MEMS applications because of its stress free structure and stability. This paper presents on- pre treatment conditions in Si wafer direct bonding, The paper resents on pre-bonding according to HF pre-treatment conditions in Si wafer direct bonding. The characteristics of bonded sample were measured under different bonding conditions of HF concentration, applied pressure and annealing temperature(200~ 100$0^{\circ}C$) after pre-bonding. The bonding strength was evaluated by tensile strength method. The bonded interface and the void were analyzed by using SEM and IR camera, respectively, Components existed in the interlayer were analyzed by using FT-IR. The bond strength depends on the HF pre-treatment condition before pre-bonding(Min 2.4kgf/$\textrm{cm}^2$~ Max : 14.kgf/$\textrm{cm}^2$)

• Journal of the Korean Society for Heat Treatment
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• v.6 no.3
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• pp.127-137
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• 1993

The changes of lamellar(${\alpha}_2+{\gamma}$) structure of TiAl intermetallic compound which is a high potential, high temperature aerospace material was investigated by heat treatment. The lamellar structure was short and made subgrain in prior a grains after homogenizing at 1523 K. It became longer and finer, and the subgrain went out during subsequent isothermal heatteating at 1273 K. The yield, fracture strength and strain to fracture if the heat treated specimens was increased and the hardness of them was decreased a little in the finer lamellar structure, because fine lamellar interface, sugrain boundary and grain boundary may block initiation and propagation of crack.

• Bulletin of the Korean Chemical Society
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• v.14 no.6
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• pp.700-704
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• 1993

The photocatalytic alanine and hydrogen production reaction were studied by using CdS as a semiconductor photocatalysts. The rate of alanine and hydrogen production depends strongly on the temperature in heat treatment of CdS powder. In particular, the rate of alanine production, which was observed using Pt/CdS(A)-(CdS from Mitsuwa), was increased about six times than that of using Pt/CdS(B)-(CdS from Furruchi) under the same heat treatment condition at 500$^{\circ}$C. And the photocatalytic activity for alanine production using bare CdS(A) or Pt/CdS(A) was almost same with increasing temperature in heat treatment in the range of 100-600$^{\circ}$C. From X-ray diffraction data and photoluminescence spectrum, we conclude that the crystal structure changes of CdS(A) or strong interaction at interface of Pt and CdS contribute to increasing the rate of alanine and hydrogen production reaction.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.2
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• pp.95-102
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• 2001

Hafnium oxide thin films for gate dielectric were deposited at $300^{\circ}C$ on p-type Si (100) substrates by plasma enhanced chemical vapor deposition (PECVD) and annealed in $O_2$ and $N_2$ ambient at various temperatures. The effect of hydrogen treatment in 4% $H_2$ at $350^{\circ}C$ for 30 min on the electrical properties of $HfO_2$for gate dielectric was investigated. The flat-band voltage shifts of $HfO_2$capacitors annealed in $O_2$ambient are larger than those in $N_2$ambient because samples annealed in high oxygen partial pressure produces the effective negative charges in films. The oxygen loss in $HfO_2$films was expected in forming gas annealed samples and decreased the excessive oxygen contents in films as-deposited and annealed in $O_2$ or $N_2$ambient. The CET of films after hydrogen forming gas anneal almost did not vary compared with that before hydrogen gas anneal. Hysteresis of $HfO_2$films abruptly decreased by hydrogen forming gas anneal because hysteresis in C-V characteristics depends on the bulk effect rather than $HfO_2$/Si interface. The lower trap densities of films annealed in $O_2$ambient than those in $N_2$were due to the composition of interfacial layer becoming closer to $SiO_2$with increasing oxygen partial pressure. Hydrogen forming gas anneal at $350^{\circ}C$ for samples annealed at various temperatures in $O_2$and $N_2$ambient plays critical role in decreasing interface trap densities at the Si/$SiO_2$ interface. However, effect of forming gas anneal was almost disappeared for samples annealed at high temperature (about $800^{\circ}C$) in $O_2$ or $N_2$ambient.

• 한국전산유체공학회:학술대회논문집
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• 2009.11a
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• pp.65-70
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• 2009

In this paper a hybrid grid generation program for general 2-D region is introduced. The program is developed by using JAVA programming language, and it can be used either as an application program on a local computer or as an applet in the network environment. The hybrid grid system for a 2-D problem means a combination of triangular cells and quadrilateral cells, and it can offer both of the high flexibility of triangular cells and the high accuracy and efficiency of structured-type quadrilateral cells. To accommodate a quadrilateral-cell region and a triangular-cell region into one computational domain, it is importance to take good care of the interface between two different regions so that overall good grid quality can be maintained. In this research advancing layer method(ALM) augmented by elliptic smoothing method is used for the quadrilateral-cell region and advancing front method(AFM) is used for the triangular-cell region. A special treatment technique for the interface between those two regions is also developed. The interface treatment technique is basically to prevent the propagation of small cell size due to ALM method into the triangular region and maintain the smooth transition of cell-size scale between two different regions. By applying current technique high-quality hybrid grids for general 2-D regions can be easily generated, and typical grid generation results and flow solutions are demonstrated.

• Journal of Surface Science and Engineering
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• v.43 no.1
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• pp.17-24
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• 2010

In this study, surface characteristics of dental implant fixture with various manufacturing process have been researched using electrochemical methods. The dental implant fixture was selected with 5 steps by cleaning, surface treatment and sterilization with same size and screw structure; the 1st step-machined surface, 2nd step-cleaned by thinner and prosol solution, 3th step-surface treated by RBM (resorbable blasting media) method, 4th step-cleaned and dried, 5th step-sterilized by gamma-ray. The electrochemical behavior of dental implant fixture has been evaluated by using potentiostat (EG&G Co, 2273A) in 0.9% NaCl solution at $36.5{\pm}1^{\circ}C$. The corrosion surface was observed using field-emission scanning electron microscopy (FE-SEM) and energy dispersive x-ray spectroscopy (EDS). The step 5 sample showed the cleaner and rougher surface than step 3 sample. The step 5 sample of implant fixture treated by RBM and gamma sterilization showed the low corrosion current density compared to others. Especially, the step 3 sample of implant fixture treated by RBM was presented the lowest value of corrosion resistance and the highest value of corrosion current density. The step 3 sample showed the low value of polarization resistance compared to other samples. In conclusion, the implant fixture treated with RBM and gamma sterilization has the higher corrosion resistance, and corrosion resistance depends on the step of manufacturing process.

• Korean Journal of Materials Research
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• v.34 no.3
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• pp.170-174
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• 2024

In this study, we report the microstructural evolution and shear strength of an Sn-Sb alloy, used for die attach process as a solder layer of backside metal (BSM). The Sb content in the binary system was less than 1 at%. A chip with the Sn-Sb BSM was attached to a Ag plated Cu lead frame. The microstructure evolution was investigated after die bonding at 330 ℃, die bonding and isothermal heat treatment at 330 ℃ for 5 min and wire bonding at 260 ℃, respectively. At the interface between the chip and lead frame, Ni₃Sn₄ and Ag₃Sn intermetallic compounds (IMCs) layers and pure Sn regions were confirmed after die bonding. When the isothermal heat treatment is conducted, pure Sn regions disappear at the interface because the Sn is consumed to form Ni₃Sn₄ and Ag₃Sn IMCs. After the wire bonding process, the interface is composed of Ni₃Sn₄, Ag₃Sn and (Ag,Cu)₃Sn IMCs. The Sn-Sb BSM had a high maximum shear strength of 78.2 MPa, which is higher than the required specification of 6.2 MPa. In addition, it showed good wetting flow.

• The Journal of Korean Academy of Prosthodontics
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• v.29 no.2
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• pp.195-209
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• 1991

When the porcelain fused to metal restorations were fractured at the metal interface, various techniques and materials for intraoral porcelain repair have been suggested. The purpose of this study was to investigate the effect of metal surface treatment method and water storage on the shear bond strength of four porcelain repair systems. : Clearfil(Kuraray), All-bond(Bisco), Superbond C & B(Sun Medical), Panavia OP(Kuraray). After the metal surfaces of the specimens were sandblasted by aluminum oxide or roughened by diamond point, they were stored in double deionized water(24 Hr., $37^{\circ}C$) and thermocycling was performed(24 Hr., 1024 cycles), and again half of specimes were stored in water bath(2 Months, $37^{\circ}C$). Mean shear bond strength and mode of failure were recorded. The results of this study were obtained as follows : 1. Differences were observed between the sandblasted and diamond - treated specimens in Clearfil, All-bond, and Superbond. No statistically significant differences were observed in Panavia. 2. The 2-month storage time significantly affected the bond strength of All-bond and Superbond. No statistically significant differences were observed in Clearfil and Panavia. 3. The failures were observed at the interface between opaque resin and the metal in Clearfil and All-bond. 4. The failures were observed at the interface between opaque resin and veneered resin in Panavia. The failures were observed at the interface between opaque resin and veneered resin in Superbond, but 40% of them were fractured at the interface between the metal and opaque resin after 2-month storage time.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.197-197
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• 2011

In this study, in contrast with cases in which Scanning Tunneling Microscopy (STM) tip-induced reactions were instigated by the tunneling electrons, the local electric field, or the mechanical force between a tip and a surface, we found that the tungsten oxide (WO3) covered tungsten (W) tip of a STM acted as a chemical catalyst for the S-H dissociative adsorption of phenylthiol and 1-octanethiol onto a Ge(100) surface. By varying the distance between the tip and the surface, the degree of the tip-catalyzed adsorption could be controlled. We have found that the thiol head-group is the critical functional group for this catalysis and the catalytic material is the WO3 layer of the tip. After removing the WO3 layer by field emission treatment, the catalytic activity of the tip has been lost. 3-mercapto isobutyric acid is a chiral bi-functional molecule which has two functional groups, carboxylic acid group and thiol group, at each end. 3-Mercapto Isobutyric Acid adsorbs at Ge(100) surface only through carboxylic acid group at room temperature and this adsorption was enhanced by the tunneling electrons between a STM tip and the surface. Using this enhancement, it is possible to make thiol group-terminated surface where we desire. On the other hand, surprisingly, the WO3 covered W tip of STM was found to act as a chemical catalyst to catalyze the adsorption of 3-mercapto isobutyric acid through thiol group at Ge(100) surface. Using this catalysis, it is possible to make carboxylic acid group-terminated surface where we want. This functional group-selective adsorption of bi-functional molecule using the catalysis may be used in positive lithographic methods to produce semiconductor substrate which is terminated by desired functional groups.