• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.331-331
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• 2009

Hafnium oxide ($HfO_2$) attracted by one of the potential candidates for the replacement of si-based oxides. For applications of the high-k gate dielectric material, high thermodynamic stability and low interface-trap density are required. Furthermore, the amorphous film structure would be more effective to reduce the leakage current. To search the gate oxide materials, metal-insulator-metal (MIM) capacitors was fabricated by pulsed laser deposition (PLD) on indium tin oxide (ITO) coated glass with different oxygen pressures (30 and 50 mTorr) at room temperature, and they were deposited by Au/Ti metal as the top electrode patterned by conventional photolithography with an area of $3.14\times10^{-4}\;cm^2$. The results of XRD patterns indicate that all films have amorphous phase. Field emission scanning electron microscopy (FE-SEM) images show that the thickness of the $HfO_2$ films is typical 50 nm, and the grain size of the $HfO_2$ films increases as the oxygen pressure increases. The capacitance and leakage current of films were measured by a Agilent 4284A LCR meter and Keithley 4200 semiconductor parameter analyzer, respectively. Capacitance-voltage characteristics show that the capacitance at 1 MHz are 150 and 58 nF, and leakage current density of films indicate $7.8\times10^{-4}$ and $1.6\times10^{-3}\;A/cm^2$ grown at 30 and 50 mTorr, respectively. The optical properties of the $HfO_2$ films were demonstrated by UV-VIS spectrophotometer (Scinco, S-3100) having the wavelength from 190 to 900 nm. Because films show high transmittance (around 85 %), they are suitable as transparent devices.

• Proceedings of the KIEE Conference
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• 1990.11a
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• pp.85-87
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• 1990

Silicon nitride film was deposited on a silicon wafer using a laser CVD(LCVD) technique, which is based on direct photolysis of $SiH_4/NH_3$ gas mixture by ArF laser beam(${\lambda}=193\;nm$). The refractive index of deposited SiN film is 1.9 at the temperature of $300^{\circ}C$, pressure of 5 torr. The breakdown field strength of LCVD SiN film was 10MV/cm. In IR spectrum, the absorption peak of Si-H, N-H, and Si-N is detected and it is shown that hydrogen is included in SiN film. From analysis of absorption band. it is calculated that density of Si-H, N-H bond is higher than $5{\times}10^{22}cm^{-3}$. LCVD MIS capacitor and PECVD MIS capacitor have injection-type hysteresis but it is known that hysteresis loss of LCVD MIS capacitor is smaller than that of PECVD MIS capacitor. It means that Interface state density of LCVD capacitor is smaller than that of PECVD capacitor. In addition, the flatband voltage($V_{FB}$) of LCVD is smaller than that of PECVD capacitor. And it means that fixed charged density($Q_{FIX}$) of LCVD capacitor is smaller than that of PECVD MIS capacitor.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.1
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• pp.97-105
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• 1998

Antioxidation mechanism of Al metal powders on $Al_2O_3-C$ refractory was investigated in temperature range from 800 to $1400^{\circ}C$. The addition of 5 wt% Al metal powders suppressed the oxidation of carbon in $Al_2O_3$-C sample. The carbons were distributed uniformly on the surface and the interface of the $Al_2O_3$-C-Al. Reaction products of $Al_4C_3$ and AIN were found with a composition of Al-C at temperatures between 800 and $1200^{\circ}C$ and transformed to $Al_2O_3$ above $1400^{\circ}C$. Cavity structures related to the to the formation of $Al_4C_3$ were observed for the AI-C after heating at $1000^{\circ}C$ ofr 1 hour. Thermodynamic mechanism was considered to discuss the formation $Al_4C_3$, AlN and their transformation to $Al_2O_3$, which leads to the effect of oxidation resistance.

• Journal of the Korean Ceramic Society
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• v.39 no.10
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• pp.948-954
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• 2002

Porous reaction bonded SiC with high fracture strength was developed using Si melt infiltration method for use of the support layer in high temperature gas filter that is essential to develop the next generation power system such as integrated gasification combined cycle system. The porosity and pore size of porous RBSC developed in this study were in the range of 32∼36% and 37∼90 ${\mu}m$ respectively and the maximum fracture strength of porous RBSC fabricated was 120 MPa. The fracture strength and thermal shock resistance of porous RBSC fabricated by Si melt infiltration were much improved compared to those of commercially available porous clay bonded SiC due to the formation of the strong SiC/Si interface between SiC particles. The characteristics of pore structure of porous RBSC was varied depending on the amounts of residual Si as Well as the size of SiC particle used in green body.

• Composites Research
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• v.33 no.5
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• pp.247-250
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• 2020

In this study, the possibility of manufacturing a magnesium (Mg) composites reinforced with continuous silicon carbide (SiC) fibers was examined using a liquid pressing process. We fabricated uniformly dispersed SiC fiberAZ91 composites using a liquid phase pressing process. Furthermore, the precipitates were controlled through heat treatment. As a continuous Mg₂Si phase was formed at the interface between the SiC fiber and the AZ91 matrix alloy, the interfacial bonding strength was improved. The tensile strength at room temperature of the prepared composite was 479 MPa, showing excellent mechanical properties.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.21 no.3
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• pp.405-413
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• 1997

In the present paper, it is attempted to reconfirm the "Intelligent" material properties using both the sintered TiNi/Al(1100) matrix composite made by powder metallurgy method and the squeeze-casted TiNi/Al6061 specimens. A metal matrix composite is, its fault has been considered to deteriorate a strength of composite by heating residual stress of the matrix. Therefore, it is necessary to remove a tensile residual stress, to produce the strength of a composite better. On the contrary, if compressive residual stress happens in matrix of composite in place of tensile residual stress, it will make the strength of composite better. So that, this paper introduce the development of a high strength of composite, by using compressive residual stress well, on the study. By using these specimens, shape memory strengthening effects in tensile strength and fatigue crack propagation above inverse transformation temperature of TiNi fiber were investigated. We occurs the prestrain and volume fraction for to discuss the effects of a composite strength. Moreover, by SEM observation, the effect of the residual stress at the interface between Al matrix and TiNi fiber and some brittle precipitation layers such as inter metallic compounds on fracture mechanisms was discussed metallurgically.urgically.

• Applied Microscopy
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• v.30 no.3
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• pp.249-254
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• 2000

We investigated the microstructure, electrical property, and magnetic property of Co/Al multilayer after annealing treatment. CoAl was formed during depositing Co/Al multilayer due to the interfacial reaction. After annealing treatment, $Co_2Si$ was formed at the Co/Si interface. The sheet resistance of Co 2 nm/Al 2 nm multilayer have the lowest value and the Rs of multilayer decreased with the increase of annealing temperature due to the formation of $Co_2Si$ phase. The Ms of 2 nm Co/2 nm Al multilayer have the lowest value and the Ms of multilayer increased with the increase of film thickness.

• Korean Journal of Materials Research
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• v.28 no.4
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• pp.195-200
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• 2018

This study investigated the effects of the post annealing temperatures on the electrical and interfacial properties of a metal-semiconductor-metal photodetector(MSM-PD) device. The interdigitate type MSM-PD devices had the structure Al(500 nm) / Ti(200 nm) / poly-Si(500 nm). Structural analyses of the MSM-PD devices were performed by employing X-ray diffraction(XRD), scanning electron microscopy(SEM) and transmission electron microscope(TEM). Electrical characteristics of the MSM-PD were also examined using current-voltage(I-V) measurements. The optimal post annealing condition for the Schottky contact of MSM-PD devices are $350^{\circ}C$-30minutes. However, as the annealing temperature and time are increased, electrical characteristics of MSM-PD device are degraded. Especially, for the annealing conditions of $400^{\circ}C$-180minutes and $500^{\circ}C$-30minutes, the I-V measurement itself was impossible. These results are closely related to the solid phase reactions at the interface of MSM-PD device, which result in the formation of intermetallic compounds such as $Al_3Ti$ and $Ti_7Al_5Si_{12}$.

• Proceedings of the KSRS Conference
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• 2005.10a
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• pp.450-453
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• 2005

A forest fire occurs mainly as natural factor such as wind, temperature or human factor such as light. Recently, the most of forest fire prevention is prediction or prevision against forest fire by using remote sensing technology. However in order to forest fire prevention, the remote sensing has many limitations such as high cost and advanced technologies and so on. Therefore, we need to multisensor integration system that utilize not only remote sensing but also in-situ sensing in order to reduce large damage of forest fire though analysis of happen cause and prediction routing of occurred forest fire. In this paper we propose a multisensor integration system that offers prediction information of factors and route of forest fire by integrates collected data from remote sensor and in-situ sensor for forest fire prevention. The proposed system is based on wireless sensor network for collect observed data from various sensors. The proposed system not only offers great quality information because firstly, raw data level fuse different format of collected data from remote and in-situ sensor but also accomplish information level fusion based on result of first stage. Offered information from our system can help early prevention of factor and early prevision against occurred forest fire which transfer to SMS service or alert service into monitoring interface of administrator.

• Journal of Korea Foundry Society
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• v.31 no.2
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• pp.66-70
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• 2011

Hot dip aluminizing (HDA) is widely used in industry for improving corrosion resistance of material. The formation of intermetallic compound layers during the contact between dissimilar materials at high temperature is common phenomenon. Generally, intermetallic compound layers of $Fe_2Al_5$ and $FeAl_3$ are formed at the Al alloy and Fe substrate interface. In case of cast iron, high contact angle of graphite existed in the matrix inhibits the formation of intermetallic compound layer, which carry with it the disadvantage of a reduced reaction area and mechanical properties. In present work, the process for the removal of graphite existed on the surface of specimen has been investigated. And also HDA was proceeded at $800^{\circ}C$ for 3 minutes in aluminum alloy melt. The efficiency of graphite removal was increased with the reduction of particle size in sanding process. Graphite appears to be present both in the region of melting followed by re-solidification and in the intermetallic compound layer, which could be attributed to the fact that the surface of cast iron is melted down by the formation of low melting point phase with the diffusion of Al and Si to the cast iron. Intermetallic compound layer consisted of $Fe(Al,Si)_3$ and $Fe_2Al_5Si$, the layer formed at cast iron side contained lower amount of Si.