• Journal of Adhesion and Interface
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• v.16 no.3
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• pp.101-107
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• 2015

Epoxy resin toughening agents such as core/shell nanoparticles, CTBN epoxy, polyester polyols, and polyurethane have been widely used in order to compensate for the brittleness and improve the impact resistance of the epoxy resin. In this work, a few tougheners mentioned above were individually added into adhesive compositions to observe the effects of physical and mechanical properties. Both flexural strength and flexural modulus were measured with UTM while impact strength was analyzed with Izod impact tester. The obtained results showed that the addition of toughening agents afforded positive performance in terms of flexibility and impact resistance of the cured epoxy resin. Furthermore, DMA experiments suggested that the trends of storage modulus data of each epoxy resin composition coincided with the trends of flexural modulus data. FE-SEM images showed that toughening agents formed circled-shape particles when it was cured in epoxy resin composition at high temperature by phase separation. The existence of particles in the cured samples explains why epoxy resin with toughener has higher impact resistance.

• The Journal of Engineering Geology
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• v.3 no.3
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• pp.279-293
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• 1993

In recent yeaes, the collapses of man made structures have been encountered from time to time due to the deformation of the ground in korea. Furthermore, the possibilities of casasters from the ground deformation suCh as landslide and active fault are atrracting our attention to the deformation monitoring. In this study, two-coordinate tilt which was monitored during six months in order to develop tediniques for prevention of disasters from the ground deformation. The two-coordinate tilt which was detected by a tilt-sensor installed in shallow depth on the slope with the sensitivity of 0.0001 arc.sec in every 10 minutes was recorded continously to PC through the interface with 200-m line coonection. The observed digital tilt data. together with the relevant meteorological data were analyzed in reference to engineering application. During the whole observation period of six months, the net tilt is 10.06 arc.sec to the west and 73.88 arc.sec to the south. Consequently the ground has a tilt of 74.56 arc.sec to the direction of $S7.75^{\circ}W$ with average tilting of 0.02 arc.sec/hour. In spite of such fast and large tilting, it is interpreted in view of engineering aspects that the site is much safe from danger, since both East-West and North-South components of tilt converge as time goes by. Two categories of deformational events are recognized ; one is toward the direction of surface slope and the other is to the direction of increased pore pressure. Tiks are acenain to have a close relation with precipitation of rain. The daily variation of two-coordinate tilt is delayed 4.3 hours in average after the variation of atmospheric temperature. A certain correlation between atmospheric pressure and deformation might be revealed.

• Applied Microscopy
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• v.30 no.4
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• pp.337-345
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• 2000

Introduction of the buffer layer and the nitridation of a sapphire substrate were one of the most general methods employed for the reduction of lattice defects in GaN thin films Brown on sapphire by MOCVD. In an effort to improve the initial nucleation and growth condition of the GaN, reactive ion beam (RIB) of nitrogen treatment of the sapphire surface has been attempted. The 10 nm thick, amorphous $AlO_xN_y$ layer was formed by RIB and was partially crystallized alter the main growth of GaN at high temperature, leaving isolated amorphous regions at the interface. The beneficial effect of amorphous layer at interface in relieving the thermal stress between substrate and GaN film was examined by measuring the lattice strain value of the GaN film grown with and without the RIB treatment. Higher order Laue zone pattern (HOLZ) of $[\bar{2}201]$ zone axis was compared with simulated patterns and lattice strain was estimated It was confirmed that the great reduction of thermal strain was achieved by RIB process and the amount of thermal stress was 6 times higher in the GaN film grown by conventional method without the RIB treatment.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.3 s.32
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• pp.23-30
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• 2004

Interfacial reaction of Pb-free $Sn0.7wt{\%}Cu$ and $Sn3.8wt{\%}Ag0.7wt{\%}Cu$ solders and Pt during aging has been investigated. After the $Sn3.8wt{\%}Ag0.7wt{\%}Cu/Pt$ specimens were reflowed at $250^{\circ}C$ for 30s and the $Sn0.7wt{\%}Cu/Pt$ specimens were reflowed at $260^{\circ}C$, the specimens were aged at $125^{\circ}C,\;150^{\circ}C$ and $170^{\circ}C$ for 25-121 hours. The intermetallic thitkness and morphology change during aging were characterized using SEM, EDS and XRD. $PtSn_4$ and $PtSn_2$ were observed in the solder/pt interface and the intermetallic formation was governed by diffusion. The activation energy of intermetallic formation was 145.3 kJ/mol for$Sn3.8wt{\%}Ag0.7wt{\%}Cu/Pt$ specimens for $Sn0.7wt{\%}Cu/Pt$ specimens from the measurement of the intermetallic thickness with aging temperature and time.

• Journal of the Korean Vacuum Society
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• v.20 no.5
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• pp.339-344
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• 2011

The Ohmic contact of Ti/Au metals on n-type ZnO thin film deposited on c-plane sapphire substrates by pulsed laser deposition was investigated by TLM (transfer length method) patterns. The Ti/Au metal films with thickness of 35 nm and 90 nm were deposited by electron-beam evaporator and thermal evaporator, respectively. By using the photo-lithography method, the $100{\times}100{\mu}m^2$ TLM patterns with $6{\sim}61{\mu}m$ gaps were formed. To improve the electrical properties as well as to decrease an interface states and stress between metal and semiconductor, the post-annelaing process was done in oxygen ambient by rapid thermal annealing system at temperature of $100{\sim}500^{\circ}C$ for 1 min. In this study, it appeared that the minimum specific contact resistivity shows about $1.1{\times}10^{-4}{\Omega}{\cdot}cm^2$ in $300^{\circ}C$ annealed sample, which may be originated from formation of oxygen vacancies of ZnO during an oxidation of Ti metal at the interface of Ohmic contacts.

• Resources Recycling
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• v.15 no.2 s.70
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• pp.3-9
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• 2006

As a basic study on the conversion of molten converter slag to the ordinary portland cement, the effects of $Al_{2}O_{3}$ addition on the interface reaction between solid CaO and molten converter slag has been studied. Alumina added converter slag whose basicity was controlled to 1 and 2 was melted and hold for 30 minutes in MgO crucible at $1500^{\circ}C$. Then sintered CaO pellet heated at the same temperature was dipped into the molten slag and held for 30minutes. After the reaction, the crucible was cooled in air and the specimen was cut off to the horizontal direction of the crucible. The dissolution rate of CaO pellet with the addition of $Al_{2}O_{3}$ was measured by the change of the radius or sintered CaO pellet and the interface layer was observed by SEM/EDX. As a result. At the basicity 2 slag, thickness of created $C_{3}S$ layer increased 3.5 times and quantity of $C_{6}AF_{2}\;or\;C_{4}AF$ phase increase 2 times than baisicy 1 slag.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.48 no.6
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• pp.63-70
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• 2011

A bicycle is different from vehicles in the structure that a rider is fully exposed to the surrounding environment. Therefore, it needs to make use of prior information about local weather, air quality, trail road condition. Moreover, since it depends on human power for moving, it should acquire route property such as hill slope, winding, and road surface to improve its efficiency in everyday use. Recent mobile applications which are to be used during bicycle riding let us aware of the necessity of development of intelligent bicycles. This study aims to develop a riding state (up-hill, down-hill, accelerating, braking) recognition algorithm using a low-power wrist watch type embedded system which has 3-axis accelerometer and wireless communication capability. The developed algorithm was applied to 19 experimental riding data and showed more than 95% of correct recognition over 83.3% of the total dataset. The altitude and temperature sensor also in the embedded system mounted on the bicycle is being used to improve the accuracy of the algorithm. The developed riding state recognition algorithm is expected to be a platform technology for intelligent bicycle interface system.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.1
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• pp.45-50
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• 2014

Effects of wet chemical treatment and thermal cycle conditions on the quantitative interfacial adhesion energy of $Cu/SiN_x$ thin film interfaces were evaluated by 4-point bending test method. The test samples were cleaned by chemical treatment after Cu chemical-mechanical polishing (CMP). The thermal cycle test between Cu and $SiN_x$ capping layer was experimented at the temperature, -45 to $175^{\circ}C$ for 250 cycles. The measured interfacial adhesion energy increased from 10.57 to $14.87J/m^2$ after surface chemical treatment. After 250 thermal cycles, the interfacial adhesion energy decreased to $5.64J/m^2$ and $7.34J/m^2$ for without chemical treatment and with chemical treatment, respectively. The delaminated interfaces were confirmed as $Cu/SiN_x$ interface by using the scanning electron microscope and energy dispersive spectroscopy. From X-ray photoelectron spectroscopy analysis results, the relative Cu oxide amounts between $SiN_x$ and Cu decreased by chemical treatment and increased after thermal cycle. The thermal stress due to the mismatch of thermal expansion coefficient during thermal cycle seemed to weaken the $Cu/SiN_x$ interface adhesion, which led to increased CuO amounts at Cu film surface.

• Journal of the Institute of Electronics Engineers of Korea CI
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• v.44 no.5
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• pp.28-37
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• 2007

IEEE 1451 standard defines an interface for network and transducer. In this paper, We propose an architectural model to configure data acquisition system and wireless smart sensor node based on IEEE 1451 standard. Proposed Network Capable Application Processor(NCAP) supports the task of data acquisition and communication for smart sensor node and network. The NCAP is able to reconfigure without interrupting the functionality of the wireless sensor node and receives the critical information of transducer using the DB. Smart sensor node is able to provide the basic information of sensor in digital format. This digital format is called Transducer Electronic Data Sheet(TEDS), is capable of plug-and-play capability of wireless sensor node and the NCAP. We simplify the format of TEDS and template to apply to wireless network environment. information of TEDS and template is transmitted using ad-hoc routing. This study system uses body temperature sensor and ECG(Electrocardiogram) sensor to provide the medical information service. The format of template is selected by data sheet of the sensor and reconfigured to accurately describe the property of the sensor. DB of NCAP is possible to register new template and information of the property as developing new sensor.

• Journal of Adhesion and Interface
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• v.21 no.3
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• pp.107-112
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• 2020

Recently, the atomically thin transition-metal dichalcogenide (TMD) semiconductors have attracted much attention owing to their remarkable properties such as tunable bandgap with high carrier mobility, flexibility, transparency, etc. However, because these TMD materials have a significant drawback that they are easily degraded in an ambient environment, various attempts have been made to improve chemical stability. In this research article, I report a method to improve the air stability of WSe₂ one of the TMD materials via surface passivation with an h-BN insulator, and its application to field-effect transistors (FETs). With a modified hot pick-up transfer technique, a vertical heterostructure of h-BN/WSe₂ was successfully made, and then the structure was used to fabricate the top-gate bottom-contact FETs. The fabricated WSe₂-based FET exhibited not only excellent air stability, but also high hole mobility of 150 ㎠/Vs at room temperature, on/off current ratios up to 3×10⁶, and 192 mV/decade of subthreshold swing.