• Steel and Composite Structures
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• 제14권1호
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• pp.41-55
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• 2013

Fiber reinforced polymers (FRP) materials are increasingly being used for strengthening and repair of steel structures. An issue that concerns engineers in steel members which are retrofitted with FRP is stress experienced due to temperature changes. The changing temperature affects the interface bond between the FRP and Steel. This research focused on the effects of cyclical thermal loadings on the interface properties of FRP bounded to steel members. Over fifty tests were conducted to investigate the thermal effects on bonding between FRP and steel, which were cycled from temperature of $-11^{\circ}C$ ($12^{\circ}F$) to $60^{\circ}C$ ($140^{\circ}F$) for 21-36 days. This investigation consisted of two test protocols, 1) the tensile test of epoxy resin, tack coat, FRP and FRP-steel plate, 2) tensile test of each FRP compound and FRP with steel after going through thermal cyclic loading. This investigation reveals an extensive reduction in the composite's strength.

• 한국세라믹학회지
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• 제30권5호
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• pp.357-364
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• 1993

Chemical reaction occurred in the interface of Mn-Zn ferrite and glass after bonding. Effects of the formation of reaction layer on the magnetic properties were investigated. The composition of glass was 23PbO-61SiO2-6ZnO-8Na2O-2K2O and the ferrite was chosen to have a high permeability. Toroid samples of ferrites bonded with glasses, were heat-treated at $700^{\circ}C$, 80$0^{\circ}C$ and 90$0^{\circ}C$ for 1h. The reaction was observed to increase with bonding temperature, resulting in the development of reaction layer. Subsequently the initial permeability was found to be decreased. The permeabilities decreased by 25% with increasing bonding temperature from $700^{\circ}C$ to 80$0^{\circ}C$. At the bonding temperature of 90$0^{\circ}C$, the permeability was decreased by 45%, compared to that of 80$0^{\circ}C$.

• 한국전기전자재료학회논문지
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• 제19권4호
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• pp.334-338
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• 2006

Poly silicon TFT requires high quality dielectric film; conventional method of growing silicon dioxide needs highly hazardous chemicals such as silane. We have grown high quality dielectric film of silicon dioxide using non-hazardous chemical such as TFOS and ozone as reaction gases by APCVD. The films grown were characterized through C-V curves of MOS structures. Conventional APCVD requires high temperature processing where as in the process of current study, we developed a low temperature process. Interface trap density was substantially decreased in the silicon surface coated with the silicon dioxide film after annealing in nitrogen ambient. The interface with such low trap density could be used for poly silicon TFT fabrication with cheaper cost and potentially less hazards.

• 한국전기전자재료학회논문지
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• 제14권7호
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• pp.533-538
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• 2001

The barrier height is found to increase from 0.25 to 0.690 eV for Schottky contacts on n-InGaAs using deposition of Ag on a substrate cooled to 77K(LT). Surface analysis leads to an interface model for the LT diode in which there are oxide compounds of In:O and As:O between the metal and semiconductor, leading to behavior as a metal-insulator-semiconductor diode. The metal film deposited t LT has a finer and more uniform structure, as revealed by scanning electron microscopy and in situ metal layer resistance measurement. This increased uniformity is an additional reason for the barrier height improvement. In contrast, the diodes formed at room temperature exhibit poorer performance due to an unpassivated surface and non-uniform metal coverage on a microscopic level.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2003년도 춘계학술대회
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• pp.1584-1589
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• 2003

This work applies the equilibrium molecular dynamics simulation method to study a Lennard-Jones liquid thin film suspended in the vapor and calculates diffusion coefficients by Green-Kubo equation derived from Einstein relationship. As a preliminary test, the diffusion coefficients of the pure argon fluid are calculated by equilibrium molecular dynamics simulation. It is found that the diffusion coefficients increase with decreasing the density and increasing the temperature. When both argon liquid and vapor phases are present, the effects of the system temperature on the diffusion coefficient are investigated. It can be seen that the diffusion coefficient significantly increases with the temperature of the system.

• Journal of Welding and Joining
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• 제20권4호
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• pp.498-504
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• 2002

Fluxless flip chip bonding process using plasma treatment instead of flux was investigated. The effect of plasma process parameters on tin-oxide etching characteristics were estimated with Auger depth profile analysis. The die shear test was performed to evaluate the adhesion strength of the flip chip bonded after plasma treatment. The thickness of oxide layer on tin surface was reduced after Ar+H2 plasma treatment. The addition of H2 improved the oxide etching characteristics by plasma. The die shear strength of the plasma-treated Sn-Pb solder flip chip was higher than that of non-treated one but lower than that of fluxed one. The difference of the strength between plasma-treated specimen and non-treated one increased with increase in bonding temperature. The plasma-treated flip chip fractured at solder/TSM interface at low bonding temperature while the fracture occurred at solder/UBM interface at higher bonding temperature.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2017년도 춘계학술대회 논문집
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• pp.118.2-118.2
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• 2017

Combustion behavior of Fe, CuO, NiO, ZnO and $Fe_2O_3$ powder mixture was carried out by finite element method (FEM) to understand a reaction at iron and metal oxide interface. The FEM was done by using ANSYS Fluent 17.0. Initial and boundary conditions are 1 atmosphere, room temperature, 0.1MPa of oxygen partial pressure, $T_{S1}=1127^{\circ}C$, $T_{S2}=327^{\circ}C$ for a cylindrical shape specimen with dia. $35{\times}80$ [mm]. The maximum combustion temperature is $1537^{\circ}C$ for the condition of conduction, convection and radiation. The combustion temperature and rate are about $847^{\circ}C$ and 3.9mm/sec, respectively. The combustion wave is enough to make ternary ferrite phase like $CuNiZnFe_2O_3$.

• 한국세라믹학회지
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• 제35권12호
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• pp.1343-1350
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• 1998

A study is made of mechanical properties of unglazed matrix as a funtion of sintering temperature and crack patterns in layer structur pottery consisting of glaze and substrate and in matrix which is sintered at 120$0^{\circ}C$ and 130$0^{\circ}C$ respectively. The mechanical properties of matrix are increased due to density and vitrification to 130$0^{\circ}C$ The interface of glazed bilayer reveals the reactive intermediate layer. Herzian indentation testing is used to investigate the evolution of damage modes as a function of load. In the materials sintered at 120$0^{\circ}C$ quasi-plastic deformation is developed at the matrix and the cone-like cracks initiate at the glazing top surface and additionally upward-extending transverse cracks initiate at the internal in-just initiate at the glazing top surface which pass through the interface with increasing of indentation load. Finally the dominant damage mode shifts from substrate quasi-plasticity to coating fracture with increasing sintering temperature.

• Macromolecular Research
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• 제15권2호
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• pp.109-113
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• 2007

The surface molecular motion of monodisperse polystyrene (PS) films was examined using scanning vis-coelasticity microscopy (SVM) in conjunction with lateral force microscopy (LFM). The dynamic storage modulus, E', and loss tangent, $tan\delta$, at a PS film surface with number-average molecular weights, $M_n$, smaller than 30 k were found to be smaller and larger than those for the bulk sample, even at room temperature, meaning that the PS surface is in a glass-rubber transition or fully rubbery sate at this temperature when the $M_n$ is small. In order to quantitatively elucidate the dynamics of the molecular motion at the PS surface, SVM and LFM measurements were performed at various temperatures. The glass transition temperature, $T_g$, at the surface was found to be markedly lower than the bulk $T_g$, and this discrepancy between the surface and bulk became larger with decreasing $M_n$. Such an intensive activation of the thermal molecular motion at the PS surfaces can be explained in terms of an excess free volume in the vicinity of the film surface induced by the preferential segregation of the chain end groups.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.73-76
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• 1999

We have fabricated and tested a Bi-based high temperature superconducting current lead system. Ag sheathed Bi-2223 mono-filament tapes of $I_c=8.4$ A at 77 K under self-field condition were fabricated using powder-in-tube(P1T) method. Multi-layer current leads can be made by stacking of Ag sheathed Bi-2223 mono-filament wires. The critical current of this 10-layer current lead is about 68 A. The contact resistance across the copper-current lead interface has been studied using current-voltage characteristics. At temperature below critical temperature the resistive contribution of the interface to the total contact resistance dominates. We have measured AC transport losses in a current lead at 77 K, 60 Hz by a transport method.