• Journal of Electrical Engineering and Technology
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• v.7 no.2
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• pp.236-239
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• 2012

In this paper, we study the transient characteristics of 4H-SiC DMOSFETs with different interface charges to improve the turn-on rising time. A physics-based two-dimensional mixed device and circuit simulator was used to understand the relationship between the switching characteristics and the physical device structures. As the $SiO_2$/SiC interface charge increases, the current density is reduced and the switching time is increased, which is due primarily to the lowered channel mobility. The result of the switching performance is shown as a function of the gate-to-source capacitance and the channel resistance. The results show that the switching performance of the 4H-SiC DMOSFET is sensitive to the channel resistance that is affected by the interface charge variations, which suggests that it is essential to reduce the interface charge densities in order to improve the switching speed in 4H-SiC DMOSFETs.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.4
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• pp.32-43
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• 2023

Resistive Random Access Memory (RRAM), based on resistive switching characteristics, is emerging as a next-generation memory device capable of efficiently processing large amounts of data through its fast operation speed, simple device structure, and high-density implementation. Interface type resistive switching offer the advantage of low operation currents without the need for a forming process. Especially, for RRAM devices based on transition metal oxides, various studies are underway to enhance the memory characteristics, including precise material composition control and improving the reliability and stability of the device. In this paper, we introduce various methods, such as doping of heterogeneous elements, formation of multilayer films, chemical composition adjustment, and surface treatment to prevent degradation of interface type resistive switching properties and enhance the device characteristics. Through these approaches, we propose the feasibility of implementing high-efficient next-generation non-volatile memory devices based on improved resistive switching properties.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.187-187
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• 2010

In this study, we investigated the effect of electrodes on resistance switching of TaOx film. Pt, Ni, TiN, Ti and Al metal electrodes having the different oxidation degree were deposited on TaOx/Pt stack. Unipolar resistance switching behavior in Pt or Ni/TaOx/Pt MIM stacks was investigated, but bipolar resistance switching behavior in TiN, Ti or Al /TaOx/Pt MIM stacks was shown. We investigated that the voltage dependence of capacitance was decreased with higher oxidation degree of metal electrodes. Through the C-V results, we expected that linearity ($\alpha$) and quadratic ($\beta$) coefficient was reduced with an increase of interface layer between top electrode and Tantalum oxide. Transmission Electron Microscope (TEM) images depicted the thickness of interface layer formed with different oxidation degree of top electrode. Unipolar resistance switching behavior shown in lower oxidation degree of top electrode was expected to be generated by the formation of the conducting path in TaOx film. But redox reaction in interface between top electrode and Tantalum oxide may play an important role on bipolar resistance switching behavior exhibited in higher oxidation degree of top electrode. We expected that the resistance switching characteristics were determined by oxidation degree of metal electrodes.

• The Transactions of the Korea Information Processing Society
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• v.3 no.7
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• pp.1845-1857
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• 1996

An alarm gathering interface equipment has been developed to collect the hardware failure activities in 1$1, 024\times1, 024$ ATM switching system. The equipment use 8-bit microprocessor and ELA-232C port, and is fabricated in a single board, which called Alarm Gathering Interface board Assembly(AGIA). It is programmed to ensure flexibility in modification and expansion of the system capability. The performance is successfully proved through communication test with hardware blocks or modules consisting a ATM switching system, these techniques can be used to develop operation and maintenance functions for more superior ATM switching system in the near future. we additionally have presented some items for further study on alarm subsystem often ATM switching system.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.37C no.10
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• pp.915-924
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• 2012

Though a mobile device is equipped with a number of wireless communication interfaces in general such as Zigbee, Bluetooth, Wi-Fi, 3G, it uses only one interface for a specific service. In this paper, we propose a mechanism of adaptive switching between wireless communication interfaces in order to efficiently use various communication interfaces. Depending on the application service and the characteristics of wireless communication interface, mobile devices select an appropriate wireless communication interface and may switch to another interface during the service. As a result, power consumption can be reduced and the utilization of communication interface can be improved by using this mechanism.

• ETRI Journal
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• v.18 no.4
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• pp.229-244
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• 1997

Realization of the economical, reliable, and efficient ATM interface block becomes an important key to development of the ATM switching system when we consider new issues raised recently. In this paper, we summarize requirements for the ATM interface block and present the UNI (User Network Interface)/NNI (Network Node Interface) architecture to meet these requirements. We also evaluate the performance of the multiplexer adopting the various multiplexing schemes and service disciplines. For ATM UNI/NNI interface technologies, we have developed a new policing device using the priority encoding scheme. It can reduce the decision time for policing significantly. We have also designed a new spacer that can space out the clumped cell stream almost perfectly. This algorithm guarantees more than 99 % conformance to the negotiated peak cell rate. Finally, we propose the interface architecture for accommodation of the ABR (Available Bit Rate) transfer capability. The proposed structure that performs virtual source and virtual destination functions as well as a switch algorithm can efficiently accommodate the ABR service.

• Korean Journal of Materials Research
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• v.22 no.8
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• pp.385-389
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• 2012

Significant improvements in the switching voltage distribution are required for the development of unipolar resistive memory devices using $MnO_x$ thin films. The $V_{set}$ of the as-grown $MnO_x$ film ranged from 1 to 6.2 V, whereas the $V_{set}$ of the oxygen-annealed film ranged from 2.3 to 3 V. An excess of oxygen in an $MnO_x$ film leads to an increase in $Mn^{4+}$ content at the $MnO_x$ film surface with a subsequent change in the $Mn^{4+}/Mn^{3+}$ ratio at the surface. This was attributed to the change in $Mn^{4+}/Mn^{3+}$ ratios at the $MnO_x$ surface and to grain growth. Oxygen annealing is a possible solution for improving the switching voltage distribution of $MnO_x$ thin films. In addition, crystalline $MnO_x$ can help stabilize the $V_{set}$ and $V_{reset}$ distribution in memory switching in a Ti/$MnO_x$/Pt structure. The improved uniformity was attributed not only to the change of the crystallinity but also to the redox reaction at the interface between Ti and $MnO_x$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.6
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• pp.436-439
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• 2010

SiC power device possesses attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation. In general, device design has a significant effect on the switching characteristics. In this work, we report the effect of the interface states ($Q_f$) on the transient characteristics of SiC DMOSFETs. The key design parameters for SiC DMOSFETs have been optimized by using a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. When the $SiO_2$/SiC interface charge decreases, power losses and switching time also decrease, primarily due to the lowered channel mobilities. High density interface states can result in increased carrier trapping, or more recombination centers or scattering sites. Therefore, the quality of $SiO_2$/SiC interfaces has a important effect on both the static and transient properties of SiC MOSFET devices.

• Journal of Power Electronics
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• v.11 no.1
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• pp.1-9
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• 2011

This paper describes a two quadrant bidirectional soft switching converter for ultra capacitor interface circuits. The total efficiency of the energy storage system in terms of size and cost can be increased by a combination of batteries and ultra capacitors. The required system energy is provided by a battery, while an ultra capacitor is used at high load power pulses. The ultra capacitor voltage changes during charge and discharge modes, therefore an interface circuit is required between the ultra capacitor and the battery. This interface circuit must have good efficiency while providing bidirectional power conversion to capture energy from regenerative braking, downhill driving and the protecting ultra capacitor from immediate discharge. In this paper a fully soft switched two quadrant bidirectional soft switching converter for ultra capacitor interface circuits is introduced and the elements of the converter are reduced considerably. In this paper, zero voltage transient (ZVT) and zero current transient (ZCT) techniques are applied to increase efficiency. The proposed converter acts as a ZCT Buck to charge the ultra capacitor. On the other hand, it acts as a ZVT Boost to discharge the ultra capacitor. A laboratory prototype converter is designed and realized for hybrid vehicle applications. The experimental results presented confirm the theoretical and simulation results.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.145-148
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• 1999

The ability to rapidly create and deploy new and novel services in response to market demands will be the key factor in determining the success of the future service provider. This goal may be approached from different directions. One of them is an open interface making the functionalities of a network element programmable and usable by outside entities. In this paper, we describe several aspects of this new, hot technical area and introduce related standard activities. In addition, we present a new switching system called MSMP (Multi-Service Multi-Plug-In), which is based on the open programmable interface concept, and describe its architecture and main functionalities of its components.