• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.830-833
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• 2003

This paper describes the fabrication and characteristics of 3C-SiCOI sotctures by SDB and etch-back technology for high-temperature MEMS applications. In this work, insulator layers were formed on a heteroepitaxial 3C-SiC film grown on a Si(001) wafer by thermal wet oxidation and PECVD process, successively. The pre-bonding of two polished PECVD oxide layers made the surface activation in HF and bonded under applied pressure. The wafer bonding characteristics were evaluated by the effect of HF concentration used in the surface treatment on the roughness of the oxide and pre-bonding strength. Hydrophilic character of the oxidized 3C-SiC film surface was investigated by ATR-FTIR. The strength of the bond was measured by tensile strengthmeter. The bonded interface was also analyzed by SEM. The properties of fabricated 3C-SiCOI structures using etch-back technology in TMAH solution were analyzed by XRD and SEM. These results indicate that the 3C-SiCOI structure will offers significant advantages in the high-temperature MEMS applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.11
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• pp.911-914
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• 2011

We optimize electrical and optical properties of thermal and SF6 plasma treated indium tin oxide (ITO)/Al based reflector for high-power ultraviolet (UV) light-emitting diodes (LEDs). After thermal and $SF_6$ plasma treatments of ITO/Al reflector, the specific contact resistance decreased from $1.04{\times}10^{-3}\;{\Omega}{\cdot}cm^2$ to $9.21{\times}10^{-4}\;{\Omega}{\cdot}cm^2$, while the reflectance increased from 58% to 70% at the 365 nm wavelength. The low resistance and high reflectance of ITO/Al reflector are attributed to the reduced Schottky barrier height (SBH) between the ITO and AlGaN by large electronegativity of fluorine species and reduced interface roughness between the ITO and Al, respectively.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.2 no.3
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• pp.26-33
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• 2003

The term 'High Speed Machining' has been used for many years to describe end milling with small diameter tools at high rotational speeds, typically 10,000-100,000rpm. The process was applied in the aerospace industry for the machining of light alloys, notably aluminum. In recent year, however, the mold and die industry has begun to use the technology for the production of components, including those manufactured from hardened tool steels. With increasing cutting speed used in modern machining operation, the thermal aspects of cutting become more and mole Important. It not only directly influences in rate of tool weal, but also affects machining precision recognized as thermal expansion and the roughness of the surface finish. Hence, one needs to accurately evaluate the rate of cutting heat generation and temperature distributions on the machining surface. To overcome the heat generation, we used to cutting fluid. Cutting fluid plays a roles in metal cutting process. Mechanically coupled effectiveness of cutting fluids affect to friction coefficient at tool-workpiece interface and cutting temperature and chip control, surface finish, tool wear and form accuracy. Through this study, we examined the behavior of heat generation in high-speed machining and the cooling performance of various cooling methods.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2001.04a
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• pp.422-428
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• 2001

The term High Speed Machining has been used for many years to describe end milling with small diameter tools at high rotational speeds, typically 10,000 - 100,000 rpm. The process was applied in the aerospace industry for the machining of light alloys, notably aluminium. In recent year, however, the mold and die industry has begun to use the technology for the production of components, including those manufactured from hardened tool steels. With increasing cutting speed used in modern machining operation, the thermal aspects of cutting become more and more important. It not only directly influences in rate of tool wear, but also will affect machining precision recognized as thermal expansion and the roughness of the surface finish. Hence, one needs to accurately evaluate the rate of cutting heat generation and temperature distributions on the machining surface. To overcome the heat generation, we used to cutting fluid. Cutting fluid play a roles in metal cutting process. Mechanically coupled effectiveness of cutting fluids affect to friction coefficient at tool-work-piece interface and cutting temperature and chip control, surface finish, tool wear and form accuracy. Through this study, we examined the behavior of heat generation in high-speed machining and the cooling performance of various cooling methods.

• Korean Journal of Materials Research
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• v.17 no.11
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• pp.569-573
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• 2007

The static and dynamic hydrophobicities of the water droplets placed on a hydrophobic surface coated using a fluoroalkylsilanes monolayer with different molecular chain lengths were investigated through direct observation of the actual droplet motion during the sliding process. The surface roughness of both was found to be less than 1 nm. The static contact angles of the coated FAS-3 and FAS-17 were respectively $80^{\circ}$ and $108^{\circ}$ at $150^{\circ}C$, 1 h. The slope of sliding acceleration against the water droplet mass exhibited an inflection point, thus suggesting the switching of the dominant sliding mode from slipping to rolling. While their sliding angles were similar in value, notable differences were exhibited in terms of their sliding behavior. This can be understood as being due to the contribution of the shear stress difference at the interface between the solid surface and water during the sliding process. These results show that the sliding acceleration of the water droplets depends strongly on the balance between gravitational and retentive forces on the hydrophobic surface.

• Korean Journal of Materials Research
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• v.9 no.5
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• pp.491-495
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• 1999

In this study, we focus on Ca contaminant which affects on the roughness Si substrate after thermal process. The initial Si substrates were contaminated intentionally by using a standard Ca solution. The contamination levels of Ca impurity were measured by TXRF and the chemical composition of that was analyzed by AES. Then we gre the thermal oxide to investigate the effect of Ca contaminants. The microroughness of the Si surface, the thermal oxide surface, and the surface after removing the thermal oxide were measured to examine the electrical characteristics. The initial substrates that were contaminated with the standard solution of Ca exhibited the contamination levels of 10\ulcorner~10\ulcorneratoms/$\textrm{cm}^2$ which was measured by TXRF. The Ca contaminants were detected by AES and exhibited the peaks of Ca, SI, C and O.After intentional contamination, the surface microroughness of this initial substrate was increased from $1.5\AA$ to 4$\AA$ as contamination levels became higher. The microroughness of the thermal oxide surfaces of both contaminated and bare Si substrates exhibits similar values. But the microroughness of the contaminated$ Si/SiO_2$ interface was increased as contamination increased. The thermal oxide of contaminated substrate exhibited the small minority carrier diffusion length, low breakdown voltage, and slightly high leakage current.

• Tribology and Lubricants
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• v.29 no.3
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• pp.167-170
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• 2013

The friction behavior of human skin is determined by the complex interplay of the material and surface properties of the skin, as well as the contacting material, and strongly depends on the contact parameters (e.g., pressure and sliding velocity) and the presence of substances such as water, sweat, or skin surface lipids at the interface. Including a study on the effect of a surface's physical roughness for skin sliding over the surface, various studies have been conducted to understand human tactile sensibility. However, to investigate products in relation to human tactile sensibility, more objective research is needed. This study performed sliding experiments between the skin and the surfaces of phone cases to understand how the texture, friction, and stick-slip characteristics are related. Eight phone case surfaces with different topologies and chemical (or mechanical) compatibilities with skin were prepared and tested multiple times.

• Journal of Surface Science and Engineering
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• v.32 no.4
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• pp.496-502
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• 1999

Electroplating of Ag and Au on the functional area of lead frames are required for good bonding ability in IC packaging. As the patterns of the lead frame become finer, development of new deposition technology has been required for solving problems associated with process control for uniform thickness on selected area. Sputtering was employed to investigate the adhesion between substrate Alloy42 and Ag film as a new candidate process alternative to conventional electroplating. Coating thickness of Ag film was controlled to 3.5$\mu\textrm{m}$ at room temperature as a reference. The deposition of film was optimized to ensure the adhesion by process parameters of substrate heating temperature at $100~300^{\circ}C$, sputter etching time at -300V for 10~30min, bias voltage of -100~-500V, and existence of Cr interlayer film of $500\AA$. The critical $load L_{c}$ /, defined as the minimum load at which initial damage occurs, was the highest up to 29N at bias voltage of -500V by scratch test. AFM surface image and AES depth profile were investigated to analyze the interface. The effect of bias voltage in sputtering was to improve the surface roughness and remove the oxide on Alloy42.

• Proceedings of the KIEE Conference
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• 1998.07g
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• pp.2501-2503
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• 1998

In this paper, the silicon-nitride membrane structure for IR sensor was fabricated through the etching and the direct bonding. The PTO layer as a IR detection layer was deposited on the membrane and its characteristics were measured. The attack of PTO layer during the etching of silicon wafer as well as the thermal isolation of the IR detection layer can be solved through the method of bonding/etching of silicon wafer. Because the PTO layer of c-axial orientation raised thermal polarization without polling, the more integration capability can be achieved. The surface roughness of the membrane was measured by AFM, the micro voids and the non-contacted area were inspected by IR detector, and the bonding interface was observed by SEM. The polarization characteristics and the dielectric characteristics of the PTO layer were measured, too.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.382-384
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• 2009

In this study, high stable oxide thin-film transistors (TFTs) have been developed by using several approaching techniques, which including a change of the channel composition ratio in multi-component oxide semiconductors, a change of TFT structure with interfacial dielectric layers, a control of interface roughness, a channel-doping method, and so on.