Approach to High Stable Oxide Thin-Film Transistors for Transparent Active Matrix Organic Light Emitting Devices

  • Cheong, Woo-Seok (Transparent Display Team, Electronics and Telecommunications Research Institute) ;
  • Lee, Jeong-Min (Transparent Display Team, Electronics and Telecommunications Research Institute) ;
  • Jeong, Jae-Kyeong (Transparent Display Team, Electronics and Telecommunications Research Institute) ;
  • KoPark, Sang-Hee (Transparent Display Team, Electronics and Telecommunications Research Institute) ;
  • Yoon, Sung-Min (Transparent Display Team, Electronics and Telecommunications Research Institute) ;
  • Cho, Doo-Hee (Transparent Display Team, Electronics and Telecommunications Research Institute) ;
  • Ryu, Min-Ki (Transparent Display Team, Electronics and Telecommunications Research Institute) ;
  • Byun, Chun-Won (Transparent Display Team, Electronics and Telecommunications Research Institute) ;
  • Yang, Shin-Hyuk (Transparent Display Team, Electronics and Telecommunications Research Institute) ;
  • Chung, Sung-Mook (Transparent Display Team, Electronics and Telecommunications Research Institute) ;
  • Cho, Kyoung-Ik (Transparent Display Team, Electronics and Telecommunications Research Institute) ;
  • Hwang, Chi-Sun (Transparent Display Team, Electronics and Telecommunications Research Institute)
  • Published : 2009.10.12

Abstract

In this study, high stable oxide thin-film transistors (TFTs) have been developed by using several approaching techniques, which including a change of the channel composition ratio in multi-component oxide semiconductors, a change of TFT structure with interfacial dielectric layers, a control of interface roughness, a channel-doping method, and so on.

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