• Title/Summary/Keyword: interface energy

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TeloSIM: Instruction-level Sensor Network Simulator for Telos Sensor Node (TeloSIM: Telos 형 센서노드를 위한 명령어 수준 센서네트워크 시뮬레이터)

  • Joe, Hyun-Woo;Kim, Hyung-Shin
    • Journal of KIISE:Computing Practices and Letters
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    • v.16 no.11
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    • pp.1021-1030
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    • 2010
  • In the sensor network, many tiny nodes construct Ad-Hoc network using wireless interface. As this type of system consists of thousands of nodes, managing each sensor node in real world after deploying them is very difficult. In order to install the sensor network successfully, it is necessary to verify its software using a simulator beforehand. In fact Sensor network simulators require high fidelity and timing accuracy to be used as a design, implementation, and evaluation tool of wireless sensor networks. Cycle-accurate, instruction-level simulation is the known solution for those purposes. In this paper, we developed an instruction-level sensor network simulator for Telos sensor node as named TeloSlM. It consists of MSP430 and CC2420. Recently, Telos is the most popular mote because MSP430 can consume the minimum energy in recent motes and CC2420 can support Zigbee. So that TeloSlM can provide the easy way for the developers to verify software. It is cycle-accurate in instruction-level simulator that is indispensable for OS and the specific functions and can simulate scalable sensor network at the same time. In addition, TeloSlM provides the GUI Tool to show result easily.

The reliability physics of SiGe hetero-junction bipolar transistors (실리콘-게르마늄 이종접합 바이폴라 트랜지스터의 신뢰성 현상)

  • 이승윤;박찬우;김상훈;이상흥;강진영;조경익
    • Journal of the Korean Vacuum Society
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    • v.12 no.4
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    • pp.239-250
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    • 2003
  • The reliability degradation phenomena in the SiGe hetero-junction bipolar transistor (HBT) are investigated in this review. In the case of the SiGe HBT the decrease of the current gain, the degradation of the AC characteristics, and the offset voltage are frequently observed, which are attributed to the emitter-base reverse bias voltage stress, the transient enhanced diffusion, and the deterioration of the base-collector junction due to the fluctuation in fabrication process, respectively. The reverse-bias stress on the emitter-base junction causes the recombination current to rise, increasing the base current and degrading the current gain, because hot carriers formed by the high electric field at the junction periphery generate charged traps at the silicon-oxide interface and within the oxide region. Because of the enhanced diffusion of the dopants in the intrinsic base induced by the extrinsic base implantation, the shorter distance between the emitter-base junction and the extrinsic base than a critical measure leads to the reduction of the cut-off frequency ($f_t$) of the device. If the energy of the extrinsic base implantation is insufficient, the turn-on voltage of the collector-base junction becomes low, in the result, the offset voltage appears on the current-voltage curve.

1D Numerical Model for Rivers Flows with Emergent Vegetations on Floodplains and Banks (정수식생이 존재하는 자연하도에서 1차원 수치모형)

  • Song, Ju-Il;Kim, Jong-Woo;Rim, Chang-Soo;Yoon, Sei-Eui
    • Journal of Korea Water Resources Association
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    • v.44 no.1
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    • pp.9-22
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    • 2011
  • A 1D numerical model for steady flow, based on the energy equation, was developed for natural rivers with emergent vegetations on floodplains and banks. The friction slope was determined by the friction law of Darcy-Weisbach. The composite friction factor of the each cross section was calculated by considering bottom roughness of the main channel and the floodplains, the flow resistance of vegetations, the apparent shear stress and the flow resistance caused by the momentum transfer between vegetated areas and non-vegetated areas. The interface friction factor caused by flow interaction was calculated by empirical formulas of Mertens and Nuding. In order to verify the accuracy of the suggested model, water surface elevations were calculated by using imaginary compound channels and the results of calculations were compared with that of the HEC-RAS. The sensitivity analysis was performed to confirm changed friction factors by vegetations density etc. The suggested model was applied to the reach of the Enz River in Germany, and estimated water surface elevations of the Enz River were compared with measured water surface elevations. This model could acceptably compute not only water surface elevations with low discharge but also that with high discharge. So, the suggested model in this study verified the applicability in natural rivers with emergent vegetations.

Direct Imaging of Polarization-induced Charge Distribution and Domain Switching using TEM

  • O, Sang-Ho
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.99-99
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    • 2013
  • In this talk, I will present two research works in progress, which are: i) mapping of piezoelectric polarization and associated charge density distribution in the heteroepitaxial InGaN/GaN multi-quantum well (MQW) structure of a light emitting diode (LED) by using inline electron holography and ii) in-situ observation of the polarization switching process of an ferroelectric Pb(Zr1-x,Tix)O3 (PZT) thin film capacitor under an applied electric field in transmission electron microscope (TEM). In the first part, I will show that strain as well as total charge density distributions can be mapped quantitatively across all the functional layers constituting a LED, including n-type GaN, InGaN/GaN MQWs, and p-type GaN with sub-nm spatial resolution (~0.8 nm) by using inline electron holography. The experimentally obtained strain maps were verified by comparison with finite element method simulations and confirmed that not only InGaN QWs (2.5 nm in thickness) but also GaN QBs (10 nm in thickness) in the MQW structure are strained complementary to accommodate the lattice misfit strain. Because of this complementary strain of GaN QBs, the strain gradient and also (piezoelectric) polarization gradient across the MQW changes more steeply than expected, resulting in more polarization charge density at the MQW interfaces than the typically expected value from the spontaneous polarization mismatch alone. By quantitative and comparative analysis of the total charge density map with the polarization charge map, we can clarify what extent of the polarization charges are compensated by the electrons supplied from the n-doped GaN QBs. Comparison with the simulated energy band diagrams with various screening parameters show that only 60% of the net polarization charges are compensated by the electrons from the GaN QBs, which results in the internal field of ~2.0 MV cm-1 across each pair of GaN/InGaN of the MQW structure. In the second part of my talk, I will present in-situ observations of the polarization switching process of a planar Ni/PZT/SrRuO3 capacitor using TEM. We observed the preferential, but asymmetric, nucleation and forward growth of switched c-domains at the PZT/electrode interfaces arising from the built-in electric field beneath each interface. The subsequent sideways growth was inhibited by the depolarization field due to the imperfect charge compensation at the counter electrode and preexisting a-domain walls, leading to asymmetric switching. It was found that the preexisting a-domains split into fine a- and c-domains constituting a $90^{\circ}$ stripe domain pattern during the $180^{\circ}$ polarization switching process, revealing that these domains also actively participated in the out-of-plane polarization switching. The real-time observations uncovered the origin of the switching asymmetry and further clarified the importance of charged domain walls and the interfaces with electrodes in the ferroelectric switching processes.

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Fabrication and Electrical Characteristics of $p^{+}$-n Ultra Shallow Junction Diode with Co/Ti Bilayer Silicide (Co/Ti 이중막 실리사이드를 이용한 $p^{+}$-n극저접합 다이오드의 제작과 전기적 특성)

  • Chang, Gee-Keun;Ohm, Woo-Yong;Chang, Ho-Jung
    • Korean Journal of Materials Research
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    • v.8 no.4
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    • pp.288-292
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    • 1998
  • The p*-n ultra shallow junction diode with Co/Ti bilayer silicide was formed by ion implantation of $BF_{2}$ energy : 30KeV, dose : $5\times10^{15}cm^{-2}$] onto the n-well Si(100) region and RTA-silicidation of the evaporated Co($120\AA$)/Ti($40\AA$) double layer. The fabricated diode exhibited ideality factor of 1.06, specific contact resistance of $1.2\times10^{-6}\Omega\cdot\textrm{cm}^2$ and leakage current of $8.6\muA/\textrm{cm}^2$(-3V) under the reverse bias of 3V. The sheet resistance of silicided emitter region, the boron concentration at silicide/Si interface and the junction depth including silicide layer of ($500\AA$ were about $8\Omega\Box$, $6\times10^{19}cm^{-3}$, and $0.14\mu{m}$, respectively. In the fabrication of diode, the application of Co/Ti bilayer silicide brought improvement of ideality factor on the current-voltage characteristics as well as reduction of emitter sheet resistance and specific contact resistance, while it led to a little increase of leakage current.

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Thermal Behavior and Crystallographic Characteristics of an Epitaxial C49-$TiSi_2$ Phase Formed in the Si (001) Substrate by $N_2$Treatment (Si (001) 기판에서 $N_2$처리에 의해 형성된 에피택셜 C49-$TiSi_2$상의 열적 거동과 결정학적 특성에 관한 연구)

  • Yang, Jun-Mo;Lee, Wan-Gyu;Park, Tae-Soo;Lee, Tae-Kwon;Kim, Joong-Jung;Kim, Weon;Kim, Ho-Joung;Park, Ju-Chul;Lee, Soun-Young
    • Korean Journal of Materials Research
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    • v.11 no.2
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    • pp.88-93
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    • 2001
  • The thermal behavior and the crystallographic characteristics of an epitaxial $C49-TiSi_2$ island formed in a Si (001) substrate by $N_2$, treatment were investigated by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). It was found from the analyzed results that the epitaxial $C49-TiSi_2$ was thermally stable even at high temperature of $1000^{\circ}C$ therefore did not transform into the C54-stable phase and did not deform morphologically. HRTEM results clearly showed that the epitaxial $TiSi_2$ phase and Si have the orientation relationship of (060)[001]$TiSi_2$//(002)[110]Si, and the lattice strain energy at the interface was mostly relaxed by the formation of misfit dislocations. Furthermore, the mechanism on the formation of the epitaxial $_C49-TiSi2$ in Si and stacking faults lying on the (020) plane of the C49 Phase were discussed through the analysis of the HRTEM image and the atomic modeling.

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An Efficient Dissemination Protocol for Remote Update in 6LoWPAN Sensor Network (6LoWPAN상에서 원격 업데이트를 위한 효율적인 코드 전파 기법)

  • Kim, Il-Hyu;Cha, Jung-Woo;Kim, Chang-Hoon;Nam, In-Gil;Lee, Chae-Wook
    • Journal of the Institute of Convergence Signal Processing
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    • v.12 no.2
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    • pp.133-138
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    • 2011
  • In IP-based wireless sensor networks (WSNs), it might be necessary to distribute application updates to the sensor nodes in order to fix bugs or add new functionality. However, physical access to nodes is in many cases extremely limited following deployment. Therefore, network reprogramming protocols have recently emerged as a way to distribute application updates without requiring physical access to sensor nodes. In order to solve the network reprogramming problem over the air interface, this thesis presents a new scheme for new update code propagation using fragmentation scheme and network coding. The proposed code propagation method roughly shows reduced performance improvement in terms of the number of data exchange compared with the previously proposed pipelining scheme. Further, It is shows enhanced reliability for update code propagation and reduced overhead in terms of the number of data exchange. As a result, we can efficiently perform the software update from the viewpoint of speed, energy, and network congestion when the proposed code propagation system is applied. In addition, the proposed system solves overhearing problems of network coding such as the loss of original messages and decoding error using the predefined message. Therefore, our system allows a software update system to exchange reliable data in wireless sensor networks.

Analysis of Cooling Air Current and Efficiency of Air Conditioning in the Underground Subway Station with Screen-Door Opening and Closing (도시철도 역사 스크린 도어 개폐에 따른 냉방 기류 해석 및 효율 비교 분석)

  • Jang, Yong-Jun;Ryu, Ji-Min;Jung, Ho-Sung
    • Journal of the Korean Society for Railway
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    • v.17 no.5
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    • pp.328-335
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    • 2014
  • Numerical prediction methods were applied to investigate the turbulent air currents and air-conditioning efficiency in an underground subway station, and the results compared to experimental data. The Shin-gumho Station($8^{th}$ floor underground and 43.6m in depth) in Seoul was selected for the analysis. The entire station was covered for simulation and the ventilation mode was ordinary. The ventilation diffusers were modeled as 95 square shapes of $0.6m{\times}0.6m$ in the lobby and as 222 square shapes in the platform. Cooling air of $47,316m^3/h$ was supplied and the returned air of $33,980m^3/h$ is exhausted in the lobby and the cooling air of $33,968m^3/h$ is supplied and the returned air of $76,190m^3/h$ was exhausted in the platform which is the same as the experimental data. The cases of the screen-door-closed and open were respectively investigated. A total of 7.5million grids were generated and the whole domain divided into 22 blocks for MPI efficiency of calculation. Large eddy simulation (LES) was applied to solve the momentum and energy equation.

Study on Electrochemical Performances of PEO-based Composite Electrolyte by Contents of Oxide Solid Electrolyte (산화물계 고체전해질 함량에 따른 PEO 기반 복합전해질 전기화학 성능 연구)

  • Lee, Myeong Ju;Kim, Ju Young;Oh, Jimin;Kim, Ju Mi;Kim, Kwang Man;Lee, Young-Gi;Shin, Dong Ok
    • Journal of the Korean Electrochemical Society
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    • v.21 no.4
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    • pp.80-87
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    • 2018
  • Safety issues in Li-ion battery system have been prime concerns, as demands for power supply device applicable to wearable device, electrical vehicles and energy storage system have increased. To solve safety problems, promising strategy is to replace organic liquid electrolyte with non-flammable solid electrolyte, leading to the development of all-solid-state battery. However, relative low conductivity and high resistance from rigid solid-solid interface hinder a wide application of solid electrolyte. Composite electrolytes composed of organic and inorganic parts could be alternative solution, which in turn bring about the increase of conductivity and conformal contact at physically rough interfaces. In our study, composite electrolytes were prepared by combining poly(ethylene oxide)(PEO) and $Li_7La_3Zr_2O_{12}$ (LLZO). The crystallinity, morphology and electrochemical performances were investigated with the control of LLZO contents from 0 wt% to 50 wt%. From the results, it is concluded that optimum content and uniform dispersion of LLZO in polymer matrix are significant to improve overall conductivity of composite electrolyte.

Development of Synthetic Signal Generator and Simulator for Performance Evaluation in Multiple Sonobuoy System (다중 소노부이 체계의 신호합성기 및 성능검증용 시뮬레이터 개발)

  • Lee, Su Hyoung;Park, Sang Bae;Han, Sang-Gyu;Kown, Bum Soo
    • Journal of the Korea Society for Simulation
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    • v.30 no.2
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    • pp.11-22
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    • 2021
  • Sonobuoy is widely used as a very important sensor in combat management system using P-3 patrol aircraft due to its advantages of rapid searching into wide exploration range. It is necessary to verify the performance of developed sonobuoy system using various maritime test data in order to be successfully applied in combat management system. But it is difficult to acquire various real maritime data because it needs much time and effort. Therefore we have developed in this paper a synthetic signal generator and a simulator that they can verify the performance of sonobuoy system and evaluate its operational effectiveness without conducting maritime test. We have synthesized target signals based on the characteristics of underwater sound sources, and then developed the synthesized signal generator which consider to sound propagation etc. like as underwater environment. And in the simulator development we use a HMI technique to enhance the convenience of operator, and design to verify the performance of sonobuoy system. The developed signal generator and simulator can be used as useful tools to evaluate the operational effectiveness such as optimal deployment of sonobuoy in combat management system using P-3 patrol aircraft.