• Journal of applied mathematics & informatics
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• v.33 no.3_4
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• pp.459-467
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• 2015

The notion of int-soft implicative filters of a BE-algebra is introduced, and related properties are investigated. The problem of clas- sifying int-soft positive implicative by their γ-inclusive filter is solved. We provide conditions for a soft set to be an int-soft filter. We make a new int-soft implicative filter from old one.

• Bulletin of the Korean Mathematical Society
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• v.53 no.5
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• pp.1483-1495
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• 2016

The notion of int-soft (implicative) filters in lattice implication algebras is introduced, and related properties are investigated. Characterizations of int-soft (implicative) filters are discussed. Conditions for an int-soft filter to be an int-soft implicative filter are provided. Extension property for int-soft implicative filters is established.

• Journal of applied mathematics & informatics
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• v.34 no.5_6
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• pp.527-536
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• 2016

In this paper, we introduce the notions about int-soft mighty filters, int-soft n-fold mighty filters, and int-soft n-fold positive implicative filters of BE-algebras. We investigate their properties and provide conditions which have connecting relationship among int-soft filters, int-soft mighty filters, and int-soft positive implicative filters. Also, characterizations of int-soft n-fold mighty filters and int-soft n-fold positive implicative filters are provided in BE-algebras.

• Journal of the Korean Magnetics Society
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• v.14 no.6
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• pp.236-239
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• 2004

We studied the specular spin valve (SSV) having the spin filter layer (SFL) in contact with the ultrathin free layer composed of Ta3/NiFe2/IrMn7/CoFel/(NOLl)/CoFe2/Cu1.8/CoFe( $t_{F}$)/Cu( $t_{SF}$ )/(NOL2)/Ta3.5 (in nm) by the magnetron sputtering system. For this antiferromagnetic I $r_{22}$M $n_{78}$-pinned spin filter specular spin valve (SFSSV) films, an optimal magnetoresistance (MR) ratio of 11.9% was obtained when both the free layer thickness ( $t_{F}$) and the SFL thickness ( $t_{SF}$ ) were 1.5 nm, and the MR ratio higher than 11% was maintained even when the $t_{F}$ was reduced to 1.0 nm. It was due to increase of specular electron by the nano-oxide layer (NOL) and of current shunting through the SFL. Moreover, the interlayer coupling field ( $H_{int}$) between free layer and pinned layer could be explained by considering the RKKY and magnetostatic coupling. The coercivity of the free layer ( $H_{cf}$ ) was significantly reduced as compared to the traditional spin valve (TSV), and was remained as low as 4 Oe when the $t_{F}$ varied from 1 nm to 4 urn. It was found that the SFL made it possible to reduce the free layer thickness and enhance the MR ratio without degrading the soft magnetic property of the free layer.