• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.564-564
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• 2012

Graphene has been emerged as a fascinating material for future nanoelectronic applications due to its extraordinally electronic properties. However, their zero-bandgap semimetallic nature is a major problem for applications in high performance field-effect transistors (FETs). Graphene nanoribbons (GNRs) with narrow widths (${\geq}10nm$) exhibit semiconducting behavior, which can be used to overcome this problem. In previous reports, GNRs were produced by several approaches, such as electron beam lithography patterning, chemically derived GNRs, longitudinal unzipping of carbon nanotubes, and inorganic nanowire template. Using these methods, however, the width distribution of GNRs was a quiet broad and substantial defects were inevitably occurred. Here, we report a novel approach for fabricating width-tailored GNRs by focused ion beam-assisted chemical vapor deposition (FIB-CVD). Width-tailored phenanthrene ($C_{14}H_{10}$) templates for direct growth of GNRs were prepared on $SiO_2$/Si substrate by FIB-CVD. The GNRs on the templates were synthesized at $900-1,050^{\circ}C$ with introducing $CH_4$ $(20sccm)/H_2$ (10 sccm) mixture gas for 10-300 min. Structural characterizations of the GNRs were carried out using Raman spectroscopy, scanning electron microscopy, and atomic force microscopy.

• Transactions on Electrical and Electronic Materials
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• v.11 no.2
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• pp.49-53
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• 2010

Microstructural origins of leakage current and physical degradation during operation in product-quality AlGaN/GaN high electron mobility transistor (HEMT) devices were investigated using photon emission microscopy (PEM) and transmission electron microscopy (TEM). AlGaN/GaN HEMTs were fabricated with metal organic chemical vapor deposition on semi-insulating SiC substrates. Photon emission irregularity, which is indicative of gate leakage current, was measured by PEM. Site specific TEM analysis assisted by a focused ion beam revealed the presence of threading dislocations in the channel below the gate at the position showing strong photon emissions. Observation of electrically degraded devices after life tests revealed crack/pit shaped defects next to the drain in the top AlGaN layer. The morphology of the defects was three-dimensionally investigated via electron tomography.

• Journal of Magnetics
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• v.13 no.3
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• pp.92-96
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• 2008

There are few reports of high frequency loss behavior in the near-field for magnetic films with semiconducting properties, even though semiconducting magnetic materials, such as soft magnetic amorphous alloys and nanocrystalline thin films, have been demonstrated. The electromagnetic loss behavior of multilayer magnetic films with semiconducting properties on the microstrip line in quasi-microwave frequency band was analyzed numerically using a commercial finite-element based electromagnetic solver. The large increase in the absorption performance and broadband characteristics of the semiconducting/insulating layer magnetic films examined in this study were attributed to an increase in the loss factor of resistive loss. The electromagnetic reflection increased significantly with increasing conductivity, and the loss power deteriorated significantly. The numerical results of the magnetic field distribution showed that a strong radiated signal on the microstrip line was emitted with increasing conductivity and decreasing film thickness due to re-reflection of the radiated wave from the surface of the magnetic film, even though the emitted levels varied with film thickness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.293-296
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• 1998

Surface electrical conduction in insulator is most important factor to assess the insulation performances of outdoor insulating materials. In this paper, contamination performance of the widely used materials for outdoor insulator - porcelain, EPDM, Silicone rubber - were discussed by measuring properties of average leakage current and scintillation discharge pulses under artificial contamination conditions. The artificial contaminations used were deionized distilled water fog, 0.5wt% NaCl salt fog of light pollution and 2wt% NaCl salt fog of medium pollution. The average leakage current was appeared linearly with applied voltage at dry and clean surface condition. The magnitude of leakage current was almost same at different kinds of samples. In case of deionized distilled water fog, the characteristics of leakage current and applied voltage was most different to that in case of dry and clean condition. In case of salt fog pollution condition, The leakage current was increased above critical voltage. The scintillation discharges were also activated at the level. the leakage current and scintillation discharges were increased with increasing pollution degree. The resistance to pollution properties of silicone rubber appeared excellent among them.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.207-210
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• 1998

Surface electrical conduction in insulator is most important factor to assess the insulation performances of outdoor insulating materials. In this paper, contamination performance of the widely used materials for outdoor insulator - porcelain, EPDM, Silicone rubber - were discussed by measuring properties of average leakage current and scintillation discharge pulses under artificial contamination conditions. The artificial contaminations used were deionized distilled water fog, 0.5wt% NaCl salt fog of light pollution and 2wt% NaCl salt fog of medium pollution. The average leakage current was appeared linearly with applied voltage at dry and clean surface condition. The magnitude of leakage current was almost same at different kinds of samples. In case of deionized distilled water fog, the characteristics of leakage current and applied voltage was most different to that in case of dry and clean condition. In case of salt fog pollution condition. The leakage current was increased above critical voltage. The scintillation discharges were also activated at the level the leakage current and scintillation discharges were increased with increasing pollution degree. The resistance to pollution properties of silicone rubber appeared excellent among them.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.10
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• pp.758-762
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• 1998

Electrical conduction property of insulator surface is most important factor to assess the insulation performances of outdoor insulating materials. In this paper, contamination performance of the materials to be used for outdoor insulator such as porcelain, EPDM, silicone rubber was discussed by measuring properties of average leakage current and scintillation discharge pulses under salt fog conditions. The fog was applied by nozzle in chamber and fogging fluids were deionized distilled water, 0.5wt% NaCI solution and 2wt% NaCl solution. The average leakage current showed linearly with applied voltage at dry and clean surface condition. The magnitude of leakage current was almost same at different kinds of samples. In case of deionized distilled water fog, the characteristics of leakage current and applied voltage were much different to those in case of dry and clean condition with 2wt% salt fog. In case of slat fog pollution condition, the leakage current was increased above critical voltage. the scintillation discharges were also activated at the level. The leakage current and scintillation discharges were increased with increasing pollution degree. The resistance to pollution properties of silicone rubber appeared excellent among them.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.13 no.6
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• pp.61-65
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• 2014

Construction heat insulating material for construction is used in large amounts in industry. In the manufacturing process of this insulation material, a thermal insulation material is completed while a polymer in a liquid state passes through Hall breaker. At this time, the quality and form of a product are determined by a hole in the breaker according to the oil pressure of the fluid and the change of the flow velocity. The friction wear action with regard to partner movement between the two levels of quality of materials affects the performance and the lifetimes of machine parts. In this study of a friction test, SM45C, which is a material used to create brake holes, was used. PVC was used to create the specimen. Moreover, an experiment divided a lubricous state and an unlubricated condition. The resulting value over the load of a pin, the revolving speed of a disk, and the standby state of an experimental result disk could be acquired.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05b
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• pp.138-141
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• 2004

In this paper, we Investigated effects on impurities and water of semiconductive shield through a thermal, mechanical, and absorption experiment to estimate performance of insulating materials in power cable. Specimens had been prepared 22[kV], 154[kV] XLPE power cables and then were made of sheet form with XLPE and semiconductive shield with dimension of 0.4[mm] ~1.2[mm] of thickness from power cable. Heat capacity $({\Delta}H)$ and glass trasition temperature (Tg) of XLPE sheet were measured by DSC (Differential Scanning Calorimetry). We could know that thermal stabilities of 154[kV] are more excellent than 22[kV] from this experimental result. The strain of mechanical properties in 22[kV] and 154[kV] XLPE was 486[%], 507[%] and stress was 1.74$[kgf/mm^2]$, 1.80$[kgf/mm^2]$. The absorption contents of existing semiconductive shield were measured 710[ppm] to 1,090[ppm], and semiconductive shield of 22[kV] cable was measured 14,750[ppm] to 24,780[ppm]. We thermal and mechanical properties of 154[kV] could know more excellent than 22[kV] from this experimental result.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05b
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• pp.142-145
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• 2004

In this paper, we researched the dielectric properties and voltage dependence on slice XLPE sheet from 22[kV] and 154[kV] power cable. studied effect for impurities and water for semiconductive shied through a dielectric properties experiment to estimate performance of insulating material in power cable. Capacitance and $tan{\delta}$ of 22[kV], 154[kV] were 52/42 pF and $7.4{\times}10^{-4}$, $2.1510^{-4}$, respectively. In these results, the trend was increased with the increase of temperature. The $tan{\delta}$ of XLPE/semiconductive layer and XLPE/water/semiconductive layer were increased as compared with that of XLPE. dielectric properties reliability of $tan{\delta}$ was small.

• Journal of information and communication convergence engineering
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• v.2 no.2
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• pp.93-96
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• 2004

The a-Si:H TFT using ferroelectric of $SrTiO_3$ as a gate insulator is fabricated on glass. Dielectric characteristics of ferroelectric are superior to $SiO_2$ and $Si_{3}N_{4}$. Ferroelectric increases on-current, decreases threshold voltage of TFT and also improves breakdown characteristics. The a-SiN:H has optical band gap of 2.61 eV, retractive index of 1.8∼2.0 and resistivity of $10^{13}$~$10^{15}$ $\Omega$cm, respectively. Insulating characteristics of ferroelectrics are excellent because dielectric constant of ferroelectric is about 60∼100 and breakdown strength is over 1MV/cm. TFT using ferroelectric has channel length of 8∼20 $\mu\textrm{m}$ and channel width of 80∼200 $\mu\textrm{m}$. And it shows that drain current is 3.4$\mu\textrm{A}$ at 20 gate voltage, $I_{on}$/$I_{off}$ is a ratio of $10^5$~$10^8$ and $V_{th}$ is 4∼5 volts, respectively. In the case of TFT without ferroelectric, it indicates that the drain current is 1.5 $\mu\textrm{A}$ at 20 gate voltage and $V_{th}$ is 5∼6 volts. With the improvement of the ferroelectric thin film properties, the performance of TFT using this ferroelectric has advanced as a gate insulator fabrication technology is realized.