• Proceedings of the KIEE Conference
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• 2008.09a
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• pp.207-210
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• 2008

In this paper, we researched the dielectric properties and voltage dependence on slice XLPE sheet from 22[kV] and 154[kV] power cable. We studied effects for impurities and water for semiconductor shield through a dielectric properties experiment to estimate performance of insulating materials in power cable. Capacitance and $tan{\delta}$ of 22[kV], 154[kV] were 53/43[pF] and $7.4{\times}10^{-4}$, $2.1510^{-4}$. In these results, the trend was increased with the increase of temperature. The tan6 of XLPE/semiconductor layer was increased as compared with that of XLPE. Dielectric properties reliability of tan6 was small. Also, To improve mean-life and reliability of power cable in this study, we have investigated chemical properties showing by changing the content of carbon black that is semiconductive additives for underground power transmission. Specimens were made of sheet form with the three of existing resins and the nine of specimens for measurement. Chemical properties of specimens was measured by FT-ATR (Fourier Transform Attenuated Total Reflectance). The condition of specimens was a solid sheet. We could observe functional group (C=O, carbonyl group) of specimens through FT-ATR. From these experimental result, the concentration of functional group (C=O) was high according to increasing the content of carbon black. We could know EEA was excellent more than other specimens from above experimental results.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.626-628
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• 1992

GCB(Gas Circuit Breaker) and GIS(Gas Insulated Switchgear) using $SF_6$ are worldwidely applied over 72.5KV classes. It Is known that $SF_6$ gas has the most superior characteristics among the extingushing and insulating media. Our Company has produced GCB and GIS from early 1980's and at present, we are producing 362KV 40KA class which is the highest voltage in our country. According to change KEPCO's standards (ESB standards), our company has redeveloped and tested for all productions type from 1989. During redeveloping, we largely contribute raise reliability of power system, through all the more improvement for performance and quality of manufactures. One of them, we developed 170KV 50KA GCB with common three-pole operating mechanism and sucessfully completed test of KERI under KEPCO presence, at first in our country. Thus, we announce the outline of it.

• Transactions on Electrical and Electronic Materials
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• v.6 no.5
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• pp.221-224
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• 2005

To overcome of poor electron injection in organic light-emitting diodes (OLEDs) with Al cathode, a thin layer of inorganic insulating materials, like as LiF, is inserted between an Al cathode and an organic electron transport layer. Though the device, mentioned above, improves both turn on voltage and luminescent properties, it has some problems like as thickness restriction, less than 2 nm, and difficulty of deposition control. On the other hand, Li organic complex, Liq, is less thickness restrictive and easy to deposit and it also enhances the performance of devices. This paper reports the improved electron injection on OLEDs with another I A group metal complex, Potassium quinolate (Kq), as an electron injection material. OLEDs with organic complexes showed improved turn-on voltage and luminous efficiency which are remarkably improved compared to OLEDs with Al cathode. Especially, OLEDs with Kq have longer life time than OLEDs with Liq.

• Journal of Information Display
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• v.4 no.4
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• pp.4-7
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• 2003

The world largest 21.3" LTPS LCD has been successfully developed using SLS crystallization technology. Integration of gate circuit, transmission gate and level shifter was successfully performed in a large area display. Uniform and high performance of high quality grains of SLS technology make it possible to realize a uniform large size LTPS TFT-LCD with half the number of data driver IC's that is typically used in a-Si LCD. High aperture ratio of 65 % was achieved using an organic inter insulating method which lead to a high brightness of 500 cd/$cm^2$.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.241-244
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• 2003

The world largest 21.3" LTPS LCD has been successfully developed using SLS crystallization technology. Successful integration of gate circuit, transmission gate and level shifter was performed in a large area uniformly. Uniformity and high performance from high quality grains of SLS technology make it possible to come true a uniform large size LTPS TFT-LCD with half number of data driver IC's used in typical a-Si LCD. High aperture ratio of 65% was obtained using an organic inter insulating method, which lead a high brightness of 500cd/cm2.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.190-190
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• 2010

The resistance and recovery properties of the YBCO thin-film wire according to the existence and thickness of an insulting layer, and the kinds of stabilization layers, were analyzed at 90 K, 180 K and 250 K. In this study, YBCO thin-film wires with different stabilizing layers and with insulating layers were examined in terms of their various characteristics, such as quenching occurrence, spread, and distribution, based on their resistance increase trends and their recovery from quenching, and the results were qualitatively explained. The results of this study on the characteristics of YBCO thin-film wires' superconducting and normal-conducting phase changes are expected to be useful in designing superconducting power machines and in improving their performance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.119-119
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• 2010

Among the various factors influencing the service life of the electric equipment, the performance of dielectric insulation materials has an important role to determine their whole service life. In order to determine the degradation of insulating materials immersed in extremely low temperature media such as liquid nitrogen, the abrupt temperature change from cryogenic to normal room temperature should be considered. But the assessments of low-temperature aging test method for the dielectric materials immersed in liquid nitrogen considering these conditions were not fully reported. Therefore, for the fundamental step to establish the suitable degradation test methods for cryogenic dielectric materials, we focused on the evaluation of ageing test methods for dielectric materials exposed to low temperature environments considering thermal shock by cool-down and warm up test.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.85-85
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• 2010

In this paper, each specimen blended at weight proportions of 80% HDPE to 20% EVA, 70% HDPE to 30% EVA, 60% HDPE to 40% EVA, and 50% HDPE to 50% EVA was manufactued respectively. FE-SEM, DSC and XRD analysis were carried out as the means of structural and chemical analysis. From the results of DSC and XRD analysis, the lower contents in blended specimens were, the higher melting temperature and crystallinity of main crystal were. It seems that the phenomena was attributes to themoplastic interpenetrating network effect(TPIPN) in which EVA having low melting point penetrated into HDPE. Also, from the decreasing tendeancy of melting point as a function of blend ration, it was confirmd that above resins have compatibility. The thermal and mechanical performance of proposed insulator were compared with conventional XLPE, main insulating material of CV cable. Also, validity was proved by superior and inferior factor respectively.

• Journal of the Korean Institute of Gas
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• v.20 no.2
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• pp.30-34
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• 2016

In this study, we synthesized a phenol foam using a resol-type phenol resin as a research for replacing the polyurethane foam used as an insulator for cryogenic temperature, such as LNG or LPG. Foaming agents for synthesizing a phenolic foam was used HCFC-141b or n-pentane, cyclopentane, n-hexane, cyclohexane and a mixture of HFC-365mfc and HFC-227ea respectively. Cyclohexane as a blowing agent exhibited the most superior insulating performance and compressive strength. The heat resistance of polyurethane foam and phenolic foam blown by the cyclohexane, was higher than polyurethane foam.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.564-564
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• 2012

Graphene has been emerged as a fascinating material for future nanoelectronic applications due to its extraordinally electronic properties. However, their zero-bandgap semimetallic nature is a major problem for applications in high performance field-effect transistors (FETs). Graphene nanoribbons (GNRs) with narrow widths (${\geq}10nm$) exhibit semiconducting behavior, which can be used to overcome this problem. In previous reports, GNRs were produced by several approaches, such as electron beam lithography patterning, chemically derived GNRs, longitudinal unzipping of carbon nanotubes, and inorganic nanowire template. Using these methods, however, the width distribution of GNRs was a quiet broad and substantial defects were inevitably occurred. Here, we report a novel approach for fabricating width-tailored GNRs by focused ion beam-assisted chemical vapor deposition (FIB-CVD). Width-tailored phenanthrene ($C_{14}H_{10}$) templates for direct growth of GNRs were prepared on $SiO_2$/Si substrate by FIB-CVD. The GNRs on the templates were synthesized at $900-1,050^{\circ}C$ with introducing $CH_4$ $(20sccm)/H_2$ (10 sccm) mixture gas for 10-300 min. Structural characterizations of the GNRs were carried out using Raman spectroscopy, scanning electron microscopy, and atomic force microscopy.