• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.9
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• pp.400-406
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• 2003

Efficient electrodes are devised for organic luminescent device(OLED). ITO electrode is treated with $O_2$ plasma. In order to inject hole efficiently, there is proposed the shape of anode that inserted plasma polymerized films as buffer layer between anode and organic layer using thiophene monomer. In the case of device inserted the buffer layer by using the plasma polymerization after $O_2$ plasma processing for ITO transparent electrode, since it forms the stable interface and reduce the moving speed of hole, the recombination of hole and electronic are made in the emitting layer. Therefore it realized the device capability of two times in the aspect of luminous efficiency than the device which do not be inserted the buffer layer. Experiments are limited to the device that has the structure of TPD/$AIq_3$, however, the aforementioned electrodes can similarly applied to the organic luminous device and the Polymer luminous device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.232-232
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• 2006

SiC single crystal Ingots were prepared onto different seed material using sublimation PVT techniques and then their crystal quality was systematically compared. In this study, the conventional SiC seed material and the new SiC seed material with an inserted SiC epitaxial layer on a seed surface were used as a seed for SiC bulk growth. The inserted epitaxial layer was grown by a sublimation epitaxy method called the CST with a low growth rate of $2{\mu}m/h$ N-type 2"-SIC single crystals exhibiting the polytype of 6H-SiC were successfully fabricated and carrier concentration levels of below $10^{17}/cm^3$ were determined from the absorption spectrum and Hall measurements. The slightly higher growth rate and carrier concentration were obtained in SiC single crystal Ingot grown on new SiC Seed materials with the inserted epitaxial layer on the seed surface, maintaining the high quality.

• Journal of the Korean Magnetics Society
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• v.14 no.5
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• pp.192-195
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• 2004

Magnetic properties by exchange biased perpendicular magnetic anisotropy in [Pd(0.8 nm)/Co(0.8 nm)]$_{5}$/FeMn(15 nm) multilayers deposited by dc magnetron sputtering system are investigated. As inserted Pd layer of interface between [Pd/Co] multilayer and FeMn film, the Hex of perpendicular anisotropy was improved from 127 Oe to 145 Oe. But result of an experiment by thermal stability, the Hex of the case that an inserted layer was inserted in decreased from low 20$0^{\circ}C$ in about 5$0^{\circ}C$ more if not inserted. If Ta was a buffer layer, the experiment results along material of buffer layer, the H$_{ex}$ obtained the largest 127 Oe. And if Pd was a buffer layer, H$_{ex}$ obtained the largest 169 Oe. Also, the Hc in buffer layer of Ta and Pd obtained the largest 203 Oe and 453 Oe, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.2
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• pp.228-235
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• 2004

In this thesis, it is designed efficient electrode formation on the organic luminescent device. ITO electrode is treated with $O_2$plasma. In order to inject hole efficiently, there is proposed the shape of anode that inserted plasma polymerized films as buffer layer between anode and organic layer using thiophene monomer. It is realized efficiently electron injection to aluminum due to introduce the quantum well in cathode. In the case of device inserted the buffer layer by using the plasma poiymerization after $O_2$plasma processing for ITO transparent electrode, since it forms the stable interface and reduce the moving speed of hole, the recombination of hole and electronic ate made in the omitting layer. Compared with the devices without buffer layer, the turn-on voltage was lowered by 1.0(V) doc to the introduction of buffer layer Since the quantum well structure is formed in front of cathode to optimize the tunneling effect, there is improved the power efficiency more than two times.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.359-361
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• 2003

Nano-porous alumina was investigated as a protecting layer in an AC Plasma Display Panel. A 2 ${\mu}m$ thick nano-porous $Al_2O_3$ layer inserted with MgO was formed on the dielectric layer instead of the conventional 500 nm-thick MgO thin film. Both nano-porous $Al_2O_3$layer and inserted MgO were prepared by wet process. The luminance and luminous efficiency of 3-inch test panel adopting nano-porous $Al_2O_3$ was higher than that of the conventional PDP.

• Proceedings of the Korean Society For Composite Materials Conference
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• 2000.04a
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• pp.167-170
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• 2000

The flexural vibration of a sandwich beam with partially inserted viscoelastic layer has been studied using the finite element analysis in combination with an experiment. Effects of length and thickness of partial viscoelastic layers on system loss factor(${\eta}_s$) and resonant frequency(${\omega}_r$) were considerably large. The thicker the viscoelastic layer in a sandwich beam, the larger the system loss factor in Mode 1 as compared with that in Mode 2. The loss factor increased almost linearly with increasing the length of partial viscoelastic layer. Effects of thickness of beams were also considered.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.9.2-9.2
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• 2011

Ultrathin polyelectrolyte (PE) multilayer films prepared by the versatile layer-by layer (LbL) assembly method have been utilized for the preparation of light-emitting diodes, electrochromic, membrane, and drug delivery system, as well as for selective area patterning and particle surface modification because the various materials with specific properties can be inserted into the film with nano-level thickness irrespective of the size or the shape of substrate. Since the introduction of the LbL technique in 1991 by Decher and Hong, various hydrophilic materials can be inserted within LbL films through complementary interactions (i.e., electrostatic, hydrogen-bonding or covalent interaction). In this study, it is demonstrated that LbL SA multilayer films based on nucleophilic substitution reaction can allow the preparation of the highly efficient magnetic and/or optical films and nonvolatile memory devices.

• Journal of Mechanical Science and Technology
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• v.18 no.3
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• pp.347-356
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• 2004

The flexural vibration characteristics of a sandwich beam system with a partially inserted viscoelastic layer were quantitatively studied using the finite element analysis in combination with the sine-sweep experiment. Asymmetric mode shapes of the flexural vibration were visualized by holographic interferometry, which agreed with those obtained by the finite element simulation. Effects of the length and the thickness of the partial viscoelastic layer on the system loss factor (η$\_$s/) and resonant frequency (f$\_$r/) were significantly large for both the symmetric and asymmetric modes of the beam system.

• Journal of Sensor Science and Technology
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• v.9 no.4
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• pp.327-333
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• 2000

Transversal SAW(Surface Acoustic Wave) filters of 340MHz were fabricated on piezoelectric substrates of the LN $128^{\circ}$ Y-X wafers. Both of spacing and width of IDT were $1.435{\mu}m$. For improving the power durability characteristics, titanium layer was inserted between aluminum electrode and piezoelectric substrate since it has high density, low thermal expansion coefficient, and good adhesive properties. Power durability was evaluated with respect to the thickness of inserted titanium layer and the temperature of heat treatment. Power durability is improved with increasing the thickness of the inserted titanium layer. Moreover, it is remarkably improved by heat treatment at the temperature of $300^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.11
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• pp.896-900
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• 2010

Electrical properties of organic light-emitting diodes were studied in a device with 7,7,8,8-tetracyano-quinodimethane (TCNQ) to see how the TCNQ affects on the device performance. Since the TCNQ has a high electron affinity, it is used for a charge-transport and injection layer. We have made a reference device in a structure of ITO(170 nm)/TPD(40 nm)/$Alq_3$(60 nm)/LiF(0.5 nm)/Al(100 nm). And two types of devices were manufactured. One type of device is the one made by doping 5 and 10 vol% of TCNQ to N,N'-diphenyl-N,N'-di(m-tolyl)-benzidine (TPD) layer. And the other type is the one made with TCNQ layer inserted in between the ITO anode and TPD organic layer. Organic layers were formed by thermal evaporation at a pressure of $10^{-6}$ torr. It was found that for the TCNQ doped devices, turn-on voltage of the device was reduced by about 20 % and the current efficiency was improved by about three times near 6 V. And for devices with TCNQ layer inserted in between the ITO anode and TPD layer, it was found that the current efficiency was improved by more than three times even though there was not much change in turn-on voltage.