• JSTS:Journal of Semiconductor Technology and Science
• /
• v.12 no.3
• /
• pp.270-277
• /
• 2012

This paper presents a new DAC design strategy to achieve a wideband dynamic linearity by increasing the bandwidth of the output impedance. In order to reduce the dominant parasitic capacitance of the conventional matrix structure, all the cells associated with a unit current source and its control are stacked in a single column very closely (stacked unit cell structure). To further reduce the parasitic capacitance, the size of the unit current source is considerably reduced at the sacrifice of matching yield. The degraded matching of the current sources is compensated for by a self-calibration. A prototype 6-bit 3.3-GS/s current-steering full binary DAC was fabricated in a 1P9M 90 nm CMOS process. The DAC shows an SFDR of 36.4 dB at 3.3 GS/s Nyquist input signal. The active area of the DAC occupies only $0.0546mm^2$ (0.21 mm ${\times}$ 0.26 mm).

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.24 no.3
• /
• pp.259-269
• /
• 2013

In this paper, we propose an SIW(Substrate Integrated Waveguide) multi-section E-plane transformer using air-holes for an SIW system with variable thicknesses. Air-holes are inserted into a SIW E-plane quarter wavelength transformer for matching an E-plane impedance discontinuity. A PSIW(Punched Substrate Integrated Waveguide) consisted of air-holes has an SIW characteristic impedance tunability because of reducing a equivalent shunt capacitance of the SIW. And, a PSIW multi-section E-plane transformer is implemented for improving a matching bandwidth by using the Chebyshev polynomial. The measurement results of PSIW double-section E-plane transformer show that the insertion loss($S_{21}$) is $1.57{\pm}0.11$ dB and input return loss($S_{11}$) is more than 15 dB from 11.45 GHz to 13.6 GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.16 no.8 s.99
• /
• pp.797-802
• /
• 2005

In this paper, we design a UHF band RFID tag antenna which is conjugate matched to an impedance of a chip and also mountable on conductive materials. The proposed tag antenna is very compact($50{\times}30{\times}4mm$) with a modified PIFA shape. The proposed tag antenna has an advantage of easy matching to various chip input impedances. The performance of the antenna is evaluated by monitoring RCS in the reader direction. The RCS of the designed tag is $-10.2\;dBm^2$ when the chip is shorted and is $-21\;dBm^2$ when the chip impedance is a complex conjugate of the antenna impedance.

• ETRI Journal
• /
• v.41 no.2
• /
• pp.167-175
• /
• 2019

A wideband dual-polarized antenna coupling cross resonator is proposed for LTE700/GSM850/GSM900 base stations. An additional resonance is introduced to obtain strong coupling between the dipole and resonator. Moreover, the input impedance of the proposed antenna is steadily close to $50{\Omega}$, which results in better impedance matching. Therefore, a wide bandwidth can be achieved with multiresonance. A prototype is fabricated to verify the proposed design. The measured results show that the antenna has a fractional bandwidth of 35.7% from 690 MHz to 990 MHz for ${\mid}S_{11}{\mid}$ < -15 dB. Stable radiation patterns as well as gain are also obtained over the entire operating band. Moreover, a five-element antenna array with an electrical downtilt of $0^{\circ}$to $14^{\circ}$ is developed for modern base station applications. Measurement shows that a wide impedance bandwidth of 34.7% (690 MHz to 980 MHz), stable HPBW (3-dB beamwidth) of $65{\pm}5^{\circ}$, and high gain of $13.8{\pm}0.6dBi$ are achieved with electrical downtilts of $0^{\circ}$, $7^{\circ}$, and $14^{\circ}$.

• Proceedings of the IEEK Conference
• /
• 2008.06a
• /
• pp.347-348
• /
• 2008

We investigate the characteristics of a dipole antenna on an artificial magnetic conductor (AMC) constructed of a normal material and a ground plane. We studied how the antenna performance is affected by changes in the dipole length and the distance between the dipole and the ground plane. The relation between the reflection phase of the AMC and the input resistance of the dipole for input impedance matching is also verified.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.44 no.7 s.361
• /
• pp.23-28
• /
• 2007

A dual-band GaAs FET low noise amplifier (LNA) with an input LC-tank circuit is designed using inductance source feedback for wireless LAN, and output matching is realized with low-pass Cheyshev filter impedance transforming circuit. Some design techniques for dual band LNA have been developed including input and output design equations. The measured results shows close agreement with the predicted performance.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.14 no.10
• /
• pp.1024-1029
• /
• 2003

This paper presents the complex antenna factor of a top-hat EMI monopole antenna for measuring time domain electromagnetic fields. The approach is facilitated by adding a artificial parallel ground plane above the monopole antenna. This allows use of cylindrical harmonic field expansions in each of three subregions enclosed by the two ground plane. The results show that the complex antenna factor of the top-hat monopole antenna does not diverge at low frequencies. When compared with a monopole antenna, the top-hat monopole antenna has broadband characteristics. In order to verify the availability of the mode-matching method, the input impedance of the antenna were compared with experiments.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.26 no.7
• /
• pp.620-626
• /
• 2015

In this paper, a 2~6 GHz wideband GaN power amplifier MMIC is designed and fabricated using a second-order all-pass filter for input impedance matching and an LC parallel resonant circuit for minimizing an output reactance component of the transistor. The second-order all-pass filter used for wideband lossy matching is modified in an asymmetric configuration to compensate the effect of channel resistance of the GaN transistor. The power amplifier MMIC chip that is fabricated using a $0.25{\mu}m$ GaN HEMT foundry process of Win Semiconductors, Corp. is $2.6mm{\times}1.3mm$ and shows a flat linear gain of about 13 dB and input return loss of larger than 10 dB. Under a saturated power mode, it also shows output power of 38.6~39.8 dBm and a power-added efficiency of 31.3~43.4 % in 2 to 6 GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.22 no.11
• /
• pp.1047-1053
• /
• 2011

In this paper, we proposed an HF-band wireless power transfer system with adaptive frequency control circuit for efficiency enhancement in a short range. In general, a wireless power transfer system shows an impedance mismatching due to a reflected impedance, because a coupling coefficient is varied with respect to separation distance between two resonating loop antennas. The proposed method can compensate this impedance mismatching by varying input frequency of a voltage-controlled oscillator adaptively with respect to separation distance. Therefore, transmission efficiency is enhanced in a short distance, where large impedance mismatch occurs. The adaptive frequency circuit consists of a directional coupler, a detector, and a loop filter. In order to demonstrate the performance of the proposed system, a wireless power transfer system with adaptive frequency control circuits is designed and implemented, which has a pair of loop antennas with a dimension of 30${\times}$30 $cm^2$. From measured results, the proposed system shows enhanced efficiency performance than the case without adaptive frequency control.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.41 no.5
• /
• pp.143-152
• /
• 2004

A novel low-power wideband bipolar second-generation current conveyors(CCIIs) and its application to universal instrumentation amplifier(UIA) were proposed. The CCII for accuracy voltage or current transfer characteristics and low current input impedance adopted adaptive current bias circuit into conventional class Ab CCII. The UIA consists of only two CCIIs and four resistors. Three instrumentation function of the UIA can be realized by selection of input signals and resistors. The simulation results show that the CCII has input impedance of 2.0$\Omega$ and the voltage gain of 60㏈ for frequency range from 0 to 50KHz when used as a voltage amplifier. The CCII has also good characteristics of current follower for current range from -100㎃ to ＋100㎃. The simulation results show that the UIA has three instrumentation amplifier functions without resistor matching. The UIA has the voltage gain of 40㏈ for frequency range from 0 to 100KHz when used as a fully-differential instrumentation amplifier. The power dissipations of the CCII and the UIA are 0.75㎽ and 1.5㎽ at supply voltage of $\pm$2.5V, respectively.