• 제목/요약/키워드: input impedance matching

Search Result 155, Processing Time 0.019 seconds

Design of Power Detection Block for Wireless Communication Transmitter Systems (무선통신 송신시스템용 전력검출부 설계)

  • Hwang, Mun-Su;Koo, Jae-Jin;Ahn, Dal;Lim, Jong-Sik
    • Journal of the Korea Academia-Industrial cooperation Society
    • /
    • v.8 no.5
    • /
    • pp.1000-1006
    • /
    • 2007
  • This paper presents a power detector circuit which monitors the transmitting power for the application in CDMA cell phones. The proposed power detector are composed of coupler for coupling output power and detector fur monitoring output power. The designed coupler has low loss characteristic because it adopts the stripline structure which consists of two ground planes at both sides of signal plane. The design frequency is 824-849MHz which is the Tx band fur CDMA mobile terminal, and the coupling factor of the stripline coupler is -20dB. A schottky barrier diode is adopted for detector design because of its high speed operation with minimized loss. The required impedance matching is performed to improve the linearity and sensitivity of output voltage at relatively low detector input level where the nonlinear characteristic of diode exists. The package parasitics as well as intrinsic diode model are considered for simulation of the detector. The predicted performances agree well with the measured results.

  • PDF

Design of X-band 40 W Pulse-Driven GaN HEMT Power Amplifier Using Load-Pull Measurement with Pre-matched Fixture (사전-정합 로드-풀 측정을 통한 X-대역 40 W급 펄스 구동 GaN HEMT 전력증폭기 설계)

  • Jeong, Hae-Chang;Oh, Hyun-Seok;Yeom, Kyung-Whan;Jin, Hyeong-Seok;Park, Jong-Sul;Jang, Ho-Ki;Kim, Bo-Kyun
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
    • /
    • v.22 no.11
    • /
    • pp.1034-1046
    • /
    • 2011
  • In this paper, a design and fabrication of 40 W power amplifier for the X-band using load-pull measurement of GaN HEMT chip are presented. The adopted active device for power amplifier is GaN HEMT chip of TriQuint company, which is recently released. Pre-matched fixtures are designed in test jig, because the impedance range of load-pull tuner is limited at measuring frequency. Essentially required 2-port S-parameters of the fixtures for extraction optimal input and output impedances is obtained by the presented newly method. The method is verified in comparison of the extracted optimal impedances with data sheet. The impedance matching circuit for power amplifier is designed based on EM co-simulation using the optimal impedances. The fabricated power amplifier with 15${\times}$17.8 $mm^2$ shows the efficiency above 35 %, the power gain of 8.7~8.3 dB and the output power of 46.7~46.3 dBm at 9~9.5 GHz with pulsed-driving width of 10 usec and duty of 10 %.

The fabrication and analysis of the SFIT type filter (SPIT형 필터 제작 및 분석)

  • You, Il-Hyun
    • Journal of the Korea Institute of Information and Communication Engineering
    • /
    • v.14 no.3
    • /
    • pp.699-706
    • /
    • 2010
  • We have studied to obtain the slanted finger interdigital(SFIT) type filter was formed on the Langasite substrate and was evaporated two IDT electrode by Aluminum-Copper alloy respectively. We can fabricate that the block weighted type IDT as an input transducer of the filter and the withdrawal weighted type IDT as an output transducer of the filter from the results of our computer-simulation. Also, we have performed to obtain the properly design conditions about phase shift conditions of the SPIT type filter. We have employed that the number of pairs of the input and output IDT are 50 pairs and the thickness and the width of reflectors are $5000\;{\AA}$ and $3.6{\mu}m$ respectively. At the first sample, we have employed that the distance from the hot electrode to the reflectors is $2.4{\mu}m$ distance from the ground electrode to the reflectors is $1.8{\mu}m$ and the distance from the hot electrode to the ground is $1.5{\mu}m$ respectively. At the other sample, we have also employed that the distance from the hot electrode to the reflectors and the distance from the ground electrode to the reflectors are $2.4{\mu}m$. Frequency response of the fabricated SAW filter has the property that the center frequency is about 190MHz and bandwidth at the 3dB is probably 7.3 MHz. And we could obtain that return is less than -20dB, ripple characteristics is probably 3dB and triple transit echo(TTE) is less than -22dB after when we have matched impedance.

The basic experiments for the fabrication of the SPUDT type Inter using the SFIT type filter (SFIT형태를 이용한 SPUDT형 필터제작에 관한 기초실험)

  • You, Il-Hyun
    • Journal of the Korea Institute of Information and Communication Engineering
    • /
    • v.11 no.10
    • /
    • pp.1916-1923
    • /
    • 2007
  • We have studied to obtain the SAW filter for the passband was formed on the Langasite substrate and was evaporated by Aluminum-Copper alloy and thin we performed computer-simulated by simulator. We cm fabricate that the block weighted type IDT as an input transducer of the filter and the withdrawal weighted type IDT as an output transducer of the filter from the results of our computer-simulation. Also, we have performed to obtain the properly design conditions about phase shift of the SAW filter for WCDMA. We have employed that the number of pairs of the input and output IDT are 50 pairs and the thickness and the width of reflector are $5000\;{\AA}$ and $3.6{\mu}m$ respectively. And we have employed that the distances from the hot electrode to the reflector are $2.0{\mu}m$, $2.4{\mu}m$ and the distance from the hot electrode to the ground is $1.5{\mu}m$ respectively. Frequency response of the fabricated SAW filter has the property that the center frequency is about 190MHz and bandwidth at the 3dB is probably 7,8MHz. And we could obtain that return loss is less then -18dB, ripple characteristics is probably 3dB and triple transit echo is less then -25dB after when we have matched impedance.

Design of Active Antenna Diplexers Using UWB Planar Monopole Antennas (초광대역 평면형 모노폴 안테나를 이용한 능동 안테나 다이플렉서의 설계)

  • Kim, Joon-Il;Lee, Won-Taek;Chang, Jin-Woo;Jee, Yong
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
    • /
    • v.18 no.9
    • /
    • pp.1098-1106
    • /
    • 2007
  • This paper presents active antenna diplexers implemented into an ultra-wideband CPW(Coplanar Waveguide) fed monopole antennas. The proposed active antenna diplexer is designed to direct interconnect the output port of a wideband antenna to the input port of two active(HEMT) devices, where the impedance matching conditions of the proposed active integrated antenna are optimized by adjusting CPW(Coplanar Waveguide) feed line to be the length of 1/20 $\lambda_0$(@5.8 GHz) in planar type wideband antenna. The measured bandwidth of the active integrated antenna shows the range from 2.0 GHz to 3.1 GHz and from 5.25 GHz to 5.9 GHz. The measured peak gains are 17.0 dB at 2.4 GHz and 15.0 dB at 5.5 GHz.