• Journal of Institute of Control, Robotics and Systems
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• v.13 no.3
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• pp.218-223
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• 2007

The dissipation of high-power ultrasonic energy at the faces of the defect causes an increase in temperature. It is resulted from localized selective heating in the vicinity of cracks because of the friction effect. In this paper the measurement of size and direction of crack using UET(Ultrasound Excitation Thermography) is described. The ultrasonic pulse energy is injected into the sample in one side. The hot spot, which is a small area around the crack tip and heated up highly, is observed. The hot spot, which is estimated as the starting point of the crack, is seen in the nearest position from the ultrasonic excitation point. Another ultrasonic pulse energy is injected into the sample in the opposite side. The hot spot, the ending point of the crack, is seen in the closest distance from the injection point also. From the calculation of the coordinates of both the first hot spot and the second hot spot observed, the size and slope of the crack is estimated. In the experiment of STS fatigue crack specimen(thickness 14mm), the size and the direction of the crack was measured.

• Korean Journal of Optics and Photonics
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• v.5 no.1
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• pp.100-105
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• 1994

We have reduced the oscillating linewidth of the commercial single mode InGaAsP visible laser diodes which emits in the 657 nm region of the spectrum down to 10 MHz by making a extended cavity employing the Littrow-type grating. The wavelength tuning characteristics of the commercial visible laser diode (CQL820D, Philips Co.) for the grating angle, laser temperature, and injection currents were measured by using the wavemeter. The proportional coefficients of the laser were found to be 1 THzlmrad, 32.4 GHz/K, and 6.14 GHz/mA, respectively.tively.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.04a
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• pp.57-64
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• 2000

As integrated circuits become more complex, the number of I/O connections per chip grow. Conventional wire-bonding, lead-frame mounting techniques are unable to keep up. The space saved by shrinking die size is lost when the die is packaged in a huge device with hundreds of leads. The solution is bumps; gold, conductive adhesive, but most importantly solder bumps. Virtually every semiconductor manufacturer in the world is using or planning to use bump technology fur their larger and more complex devices. Several wafer-bumping processes used in the manufacture of bumped wafer. Some of the more popular techniques are evaporative, stencil or screen printing, electroplating, electrodes nickel, solder jetting, stud bumping, decal transfer, punch and die, solder injection or extrusion, tacky dot process and ball placement. This paper will discuss the process steps for bumping wafers using these techniques. Critical cleaning is a requirement for each of these processes. Key contaminants that require removal are photoresist and flux residue. Removal of these contaminants requires wet processes, which will not attack, wafer metallization or passivation. research has focused on enhanced cleaning solutions that meet this critical cleaning requirement. Process parameters defining time, temperature, solvency and impingement energy required to solvate and remove residues from bumped wafers will be presented herein.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.1
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• pp.51-59
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• 2000

As integrated circuits become more complex, the number of I/O connections per chip grow. Conventional wire-bonding, lead-frame mounting techniques are unable to keep up. The space saved by shrinking die size is lost when the die is packaged in a huge device with hundreds of leads. The solution is bumps; gold, conductive adhesive, but most importantly solder bumps. Virtually every semiconductor manufacturer in the world is using or planning to use bump technology for their larger and more complex devices. Several wafer-bumping processes used in the manufacture of bumped wafer. Some of the more popular techniques are evaporative, stencil or screen printing, electroplating, electroless nickel, solder jetting, stud humping, decal transfer, punch and die, solder injection or extrusion, tacky dot process and ball placement. This paper will discuss the process steps for bumping wafers using these techniques. Critical cleaning is a requirement for each of these processes. Key contaminants that require removal are photoresist and flux residue. Removal of these contaminants requires wet processes, which will not attack, wafer metallization or passivation. Research has focused on enhanced cleaning solutions that meet this critical cleaning requirement. Process parameters defining time, temperature, solvency and impingement energy required to solvate and remove residues from bumped wafers will be presented herein.

• Journal of the Korean Ceramic Society
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• v.46 no.6
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• pp.700-707
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• 2009

This paper described finite element analysis (FEA) for fabrication processes of PZT perform using ceramic injection molding (CIM). The viscosity and the PVT characteristics of the manufactured PZT feedstock were measured. The filling patterns, pressure and temperature distributions of the preform were analyzed with TIMON 3D packages during CIM process. The geometrical variables such as gate type, location, and base thickness of the preform were considered. Also the fabrication conditions of the preform were optimized during the entire CIM process. Based on the simulated results, the various good perform was easily fabricated with the CIM process.

• Particle and aerosol research
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• v.8 no.2
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• pp.55-68
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• 2012

Particulate matters (PM) which are collected into a diesel particulate filter (DPF) system have to be periodically removed by thermal oxidation. In this report, we fabricated an electrohydrodynamic-assisted pressure-swirl nozzle to spray diesel droplets finer. Atomization performance of the nozzle was evaluated using both experimental and numerical methods. Two types of nozzle designs, the charge induction type and the charge injection type, were tested. While the former generated diesel droplets of $400\;{\mu}m$ at an applied electric potential over 10 kV, the latter presented the droplets smaller than $23\;{\mu}m$ at an applied electric potential of 8 kV. The numerical simulation results showed that the reduced size of droplets caused higher evaporation of droplets and therefore the increased temperature, which would eventually increase the regeneration performance of the DPF system.

• Journal of Advanced Marine Engineering and Technology
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• v.28 no.5
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• pp.818-826
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• 2004

The spray-induced mixing characteristics and thermal decomposition of aqueous urea solution into ammonia have been studied to design optimum sizes and geometries of the mixing chamber in SCR(Selective Catalytic Reduction) system. The cold flow tests about the urea-injection nozzle were performed to clarify the parameters of spray mixing characteristics such as mean diameter and velocity of drops and spray width determined from the interactions between incoming air and injected drops. Discrete particle model in Fluent code was adopted to simulate spray-induced mixing process and the experimental results on the spray characteristics were used as input data of numerical calculations. The simulation results on the spray-induced mixing were verified by comparing the spray width extracted from the digital images with the simulated Particle tracks of injected drops. The single kinetic model was adopted to predict thermal decomposition of urea solution into ammonia and solved simultaneously along with the verified spray model. The hot air generator was designed to match the flow rate and temperature of the exhaust gas of the real engines The measured ammonia productions in the hot air generator were compared with the numerical predictions and the comparison results showed good agreements. Finally, we concluded that the design capabilities for sizing optimum mixing chamber were established.

• Journal of Korean Neurosurgical Society
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• v.56 no.1
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• pp.71-74
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• 2014

Cancer-related facial pain refractory to pharmacologic management or nondestructive means is a major indication for destructive pain surgery. Stereotactic mesencephalotomy can be a valuable procedure in the management of cancer pain involving the upper extremities or the face, with the assistance of magnetic resonance imaging (MRI) and electrophysiologic mapping. A 72-year-old man presented with a 3-year history of intractable left-sided facial pain. When pharmacologic and nondestructive measures failed to provide pain alleviation, he was reexamined and diagnosed with inoperable hard palate cancer with intracranial extension. During the concurrent chemoradiation treatment, his cancer-related facial pain was aggravated and became medically intractable. After careful consideration, MRI-based stereotactic mesencephalotomy was performed at a point 5 mm behind the posterior commissure, 6 mm lateral to and 5 mm below the intercommissural plane using a 2-mm electrode, with the temperature of the electrode raised to $80^{\circ}C$ for 60 seconds. Up until now, the pain has been relatively well-controlled by intermittent intraventricular morphine injection and oral opioids, with the pain level remaining at visual analogue scale 4 or 5. Stereotactic mesencephalotomy with the use of high-resolution MRI and electrophysiologic localization is a valuable procedure in patients with cancer-related facial pain.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.176.2-176.2
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• 2014

In this work, we demonstrated that the fabrication of flexible graphene-based chemical sensor with heaters by soft lithographic patterning method [1]. First, monolayer and multilayer graphene were prepared by thermal chemical vapor deposition transferred onto SiO2 / Si substrate in order to fabrication of patterned-sensor and -heater. Second, patterned-monolayer and multilayer graphene were detached through soft lithography process, which was transferred on top and bottom sides of PET film. Third, Au / Ti (Thickness : 100/30 nm) electrodes were deposited end of the patterned-graphene line by sputtering system. Finally, we measured sensor properties through injection of NO2 and CO2 gas on different temperature with voltage change of graphene heater.

• Applied Science and Convergence Technology
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• v.27 no.3
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• pp.47-51
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• 2018

We fabricated an anode-type ion beam source and studied its driving characteristics of the initial extraction of ions using two driving mechanisms: a diffusion phenomenon and a charge repulsion phenomenon. For specimen exposed to the ion beam in two methods, the surface impurity element was investigated by using X-ray photoelectron spectroscopy. Upon Ar gas injection for plasma generation the ion beam source was operated for 48 hours. We found a Fe 2p peak 5.4 at. % in the initial ions by the diffusion mechanism while no indication of Fe in the ions released in the charge repulsion mechanism. As for a long operation of 200 min, the temperature of ion beam sources was measured to increase at the rate of ${\sim}0.1^{\circ}C/min$ and kept at the initial value of $27^{\circ}C$ for driving by diffusion and charge repulsion mechanism, respectively. In this study, we confirmed that the ion beam source driven by the charge repulsion mechanism was very efficient for a long operation as proved by little electrode damage and thermal stability.