• Journal of Information Technology Services
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• v.14 no.4
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• pp.137-157
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• 2015

The development of Social Network Service (SNS) has brought many positive changes to the ways people communicate, interact and share information. However, using the SNS does not always leads to in a positive results, particularly when it is addictively used. In fact, the addictive use of SNS results in many negative effects in our society. Recently, SNS users feel negative emotions such as expecially stress and fatigue while using SNS. Thus, the purpose of this study is to empirically examine antecedents of user fatigue on SNS, which can be explained by the degree of Individual, environment and SNS characteristics. This study also examines consequences of user fatigue on SNS. Lastly, we examine the moderating effects of Habit among SNS fatigue, barrier of living and task performance decline. The data for empirical analysis were collected 401 responses on SNS users in Korea. The results of this study are as follows; First, reputation perception, loneliness, unwanted relation, privacy concern, information overload, social presence and interaction are significantly related to SNS fatigue. Second, SNS fatigue, barrier of living and Task performance decline are significantly related to discontinuous usage intention. Third, the moderating effect of Habit of SNS using is found in the relationship among SNS fatigue, barrier of living and task performance decline. Based on the results of this study, Theoretical and practical suggestions were discussed.

• Journal of the Korea Convergence Society
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• v.10 no.2
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• pp.207-215
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• 2019

The study aims to develop the indicators to evaluate archival information service environments for the disabled in archives. Based on the barrier-free authentication indicators, the study analyzed the main concepts of archival information services and the service movement lines of users in archives. The study developed new indicators to evaluate records and information service environments by synthesizing all the concepts of information services, service movement lines, barrier-free authentication indicators and the regulations related to archival information services. The study can contribute to find out core problems of service environments in archives through utilizing the new indicators and scales, and to suggest alternatives to improve the environmental conditions for the disabled.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.617-619
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• 2008

Inorganic-organic hybrid multilayers were formed on the plastic substrate to enhance the barrier properties of substrate to water vapor and oxygen transport. Plasma pretreatment of substrate with $Ar/O_2$ lead to adhesion improvement and the densification of inorganic layer on the substrates. Combination of $SiO_xN_y$ layer and silanenanoclay composite layer offered quite good barrier properties (WVTR and OTR) to PES substrate.

• Journal of information and communication convergence engineering
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• v.5 no.1
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• pp.45-49
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• 2007

The analytical transport model in subthreshold regime for double gate MOSFET has been presented to analyze the short channel effects such as subthreshold swing, threshold voltage roll-off and drain induced barrier lowering. The present approach includes the quantum tunneling of carriers through the source-drain barrier. Poisson equation is used for modeling thermionic emission current, and Wentzel-Kramers-Brillouin approximations are applied for modeling quantum tunneling current. This model has been used to investigate the subthreshold operations of double gate MOSFET having the gate length of the nanometer range with ultra thin gate oxide and channel thickness under sub-20nm. Compared with results of two dimensional numerical simulations, the results in this study show good agreements with those for subthreshold swing and threshold voltage roll-off. Note the short channel effects degrade due to quantum tunneling, especially in the gate length of below 10nm, and DGMOSFETs have to be very strictly designed in the regime of below 10nm gate length since quantum tunneling becomes the main transport mechanism in the subthreshold region.

• Communications of the Korean Mathematical Society
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• v.23 no.2
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• pp.285-294
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• 2008

A new Monte Carlo method is presented to compute the prices of barrier options on stocks. The key idea of the new method is to use an exit probability and uniformly distributed random numbers in order to efficiently estimate the first hitting time of barriers. It is numerically shown that the first hitting time error of the new Monte Carlo method decreases much faster than that of standard Monte Carlo methods.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.10
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• pp.763-766
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• 2010

By improving the conducting process of metal source/drain (S/D) in direct contact with the channel, schottky barrier metal-oxide-semiconductor field effect transistors (SB MOSFETs) reveal low extrinsic parasitic resistances, offer easy processing and allow for well-defined device geometries down to the smallest dimensions. In this work, we investigated the arrhenius plots of the SB MOSFETs with different S/D schottky barrier (SB) heights between simulated and experimental current-voltage characteristics. We fabricated SB MOSFETs using difference S/D metals such as Cr (${\Phi}_{Cr}$ ~4.5 eV) and Ni (${\Phi}_{Ni}$~5.2 eV), respectively. Schottky barrier height (${\Phi}_B$) of the fabricated devices were measured to be 0.25~0.31 eV (Cr-S/D device) and 0.16~0.18 eV (Ni-S/D device), respectively in the temperature range of 300 K and 475 K. The experimental results have been compared with 2-dimensional simulations, which allowed bandgap diagram analysis.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.2
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• pp.69-76
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• 2005

Interface-trap density, lifetime and Schottky barrier height of erbium-silicided Schottky diode are evaluated using equivalent circuit method. The extracted interface trap density, lifetime and Schottky barrier height for hole are determined as $1.5{\times}10^{13} traps/cm^2$, 3.75 ms and 0.76 eV, respectively. The interface traps are efficiently cured by $N_2$ annealing. Based on the diode characteristics, various sizes of erbium- silicided/platinum-silicided n/p-type Schottky barrier metal-oxide-semiconductor field effect transistors (SB-MOSFETs) are manufactured from 20 m to 35nm. The manufactured SB-MOSFETs show excellent drain induced barrier lowering (DIBL) characteristics due to the existence of Schottky barrier between source and channel. DIBL and subthreshold swing characteristics are compatible with the ultimate scaling limit of double gate MOSFETs which shows the possible application of SB-MOSFETs in nanoscale regime.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.3
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• pp.101-107
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• 1990

In this work, one-dimensional simulation is carried out for PT-GaAs Schottky barrier diodes with finite difference method. Shockley's semiconductor governing equations: Poisson equation and current continuity equation are discertized, and linearized by Newton-Raphson method. The linear system of equation is solved by Gaussian elimination method until convergence is achieved. The boundary condition for this equation is taken from thermionic emission-diffusion theory. Simulation is done for PT-GaAs epitaxial-layer Schottky barrier diodes. The claculated results of electron and potential distribution are shown. Simulation results show exellent agreement with experiments.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.4
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• pp.217-222
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• 2003

A new two-dimensional analytical model for the potential distribution and drain-induced barrier lowering (DIBL) effect of fully depleted short-channel Silicon-on-insulator (SOI)-MESFET's has been presented in this paper. The two dimensional potential distribution functions in the active layer of the device is approximated as a simple parabolic function and the two-dimensional Poisson's equation has been solved with suitable boundary conditions to obtain the bottom potential at the Si/oxide layer interface. It is observed that for the SOI-MESFET's, as the gate-length is decreased below a certain limit, the bottom potential is increased and thus the channel barrier between the drain and source is reduced. The similar effect may also be observed by increasing the drain-source voltage if the device is operated in the near threshold or sub-threshold region. This is an electrostatic effect known as the drain-induced barrier lowering (DIBL) in the short-gate SOI-MESFET's. The model has been verified by comparing the results with that of the simulated one obtained by solving the 2-D Poisson's equation numerically by using the pde toolbox of the widely used software MATLAB.

• Journal of Korea Society of Industrial Information Systems
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• v.16 no.5
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• pp.115-126
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• 2011

This study focused on analyzing the effects of ease of use, usefulness on switching barrier and loyalty in the Korean telecommunication market. This study formulated a structural equational model, in which ease of use was adapted as an exogenous variable and in which usefulness, switching barrier were included as intermediate variables, having influences to the endogenous variable such as customer satisfaction and loyalty. In this study 6 hypotheses had been formulated, on which this research model was based, in order to test the significance of structured paths, suggested, in the previous articles, that having high interactive effects. This study collected the effective questionnaires of 452 respondents who had jobs nationwide and who used the telecommunication terminals and then analyzed with AMOS19 and SPSS19 to test the hypotheses. As a result, the conclusions are as follows: First, the ease of use and usefulness had significant effects on the switching barrier. Secondly, ease of use had a significant effect on the usefulness of customers, by which customers' satisfaction was influenced at low significant level. After all, the effects of ease of use and usefulness on switching barrier and satisfaction of the users of smart phones had been shown at the highest level.