• Journal of Broadcast Engineering
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• v.14 no.4
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• pp.419-427
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• 2009

We present a novel head tracking system for stereoscopic displays that ensures the viewer has a high degree of movement. The tracker is capable of segmenting the viewer from background objects using their relative distance. A depth camera using TOF(Time-Of-Flight) is used to generate a key signal for eye tracking application. A method of the moving parallax barrier is also introduced to supplement a disadvantage of the fixed parallax barrier that provides observation at the specific locations.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.7
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• pp.47-59
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• 1993

The thermal stability of "stuffed" TiN/Ti barrier matals with different annealing history has been studied to improve the contact reliability of Al/Si contacts in 16M DRAM. The annealing conditions before the Al deposition such as film thickness, the annealing temperature and the annealing ambient have been varied. For TiN(900A)/Ti(300A) annealed at 450 in nitrogen ambient to form a "stuffed barrier" by inducing oxygen atoms into grain boundaries, there is no observation of Al penetrations into Si substrates after the post heat treatment of up to 700 even though there are massive amounts of Al found in TiN film after the post heat treatment of 600 indicating that TiN has a "sponge-like" function due to its ability to absorb several amounts of aluminum at elevated temperature. The TiN/Ti diffusion barrier annealed at 550 has, however, failed after the post heat treatment at 600. The thinner diffusion barriers with TiN(300A)/Ti(100A) failed after the post heat treatment at 600.he post heat treatment at 600.

• Korean Institute of Interior Design Journal
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• v.26 no.3
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• pp.13-24
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• 2017

Promoting barrier-free living environments is necessary in residential facilities on which senior citizens rely most of their lives. Safety of elder people can be reassured by a certification system based on the existing barrier-free certification program in public facilities. The range of certification does not cover all living area, but is limited to the bathroom, which is a sanitary space. Given the nature of BIM modeling, an existing multi-family building was selected and modeled, as the certification process requires all the necessary information and various viewport. BIM modeling of the bathroom was conducted in accordance with the requirements of the certification for barrier-free living environment. The results suggested that there is a need for a removal of thresholds, larger doors, better selection of finishing materials, sufficient room for a wheelchair, larger space next to the toilet, and the availability of an emergency bell and grab bars. Such information supports the potentials of BIM modeling, and it is expected that an automated certification system would be established in the foreseeable future.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.3
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• pp.579-584
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• 2012

In this paper, drain induced barrier lowering(DIBL) has been analyzed as one of short channel effects occurred in double gate(DG) MOSFET. The DIBL is very important short channel effects as phenomenon that barrier height becomes lower since drain voltage influences on potential barrier of source in short channel. The analytical potential distribution of Poisson equation, validated in previous papers, has been used to analyze DIBL. Since Gaussian function been used as carrier distribution for solving Poisson's equation to obtain analytical solution of potential distribution, we expect our results using this model agree with experimental results. The change of DIBL has been investigated for device parameters such as channel thickness, oxide thickness and channel doping concentration.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.10a
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• pp.888-891
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• 2011

In this paper, drain induced barrier lowering(DIBL) has been analyzed as one of short channel effects occurred in double gate(DG) MOSFET. The DIBL is very important short channel effects as phenomenon that barrier height becomes lower since drain voltage influences on potential barrier of source in short channel. The analytical potential distribution of Poisson equation, validated in previous papers, has been used to analyze DIBL. Since Gaussian function been used as carrier distribution for solving Poisson's equation to obtain analytical solution of potential distribution, we expect our results using this model agree with experimental results. The change of DIBL has been investigated for device parameters such as channel thickness, oxide thickness and channel doping intensity.

• Journal of information and communication convergence engineering
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• v.17 no.2
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• pp.161-165
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• 2019

In this study, zinc tin oxide (ZTO) thin-film transistors are researched to observe the correlation between the barrier potential and electrical properties. Although much research has been conducted on the electronic radiation from Schottky contacts in semiconductor devices, research on electronic radiation that occurs at voltages above the threshold voltage is lacking. Furthermore, the current phenomena occurring below the threshold voltage need to be studied. Bidirectional transistors exhibit current flows below the threshold voltage, and studying the characteristics of these currents can help understand the problems associated with leakage current. A factor that affects the stability of bidirectional transistors is the potential barrier to the Schottky contact. It has been confirmed that Schottky contacts increase the efficiency of the element in semiconductor devices, by cutting off the leakage current, and that the recombination at the PN junction is closely related to the Schottky contacts. The bidirectional characteristics of the transistors are controlled by the space-charge limiting currents generated by the barrier potentials of the SiOC insulated film. Space-charge limiting currents caused by the tunneling phenomenon or quantum effect are new conduction mechanisms in semiconductors, and are different from the leakage current.

• Journal of information and communication convergence engineering
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• v.3 no.4
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• pp.179-183
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• 2005

A photodiode capable of obtaining a sufficient photo/ dark current ratio at both forward bias state and reverse bias state is proposed. The photodiode includes a glass substrate, an aluminum film formed as a lower electrode over the glass substrate, an alumina film formed as an insulator barrier over the aluminum film, a hydrogenated amorphous silicon film formed as a photo conduction layer over a portion of the alumina film, and a transparent conduction film formed as an upper electrode over the hydro-generated amorphous silicon film. A good quality alumina $(Al_2O_3)$ film is formed by oxidation of aluminum film using electrolyte solution of succinic acid. Alumina is used as a potential barrier between amorphous silicon and aluminum. It controls dark-current restriction. In case of photodiodes made by changing the formation condition of alumina, we can obtain a stable dark current $(\~10^{-12}A)$ in alumina thickness below $1000{\AA}$. At the reverse bias state of the negative voltage in ITO (Indium Tin Oxide), the photo current has substantially constant value of $5{\times}10^{-9}$ A at light scan of 100 1x. On the other hand, the photo/dark current ratios become higher at smaller thicknesses of the alumina film. Therefore, the alumina film is used as a thin insulator barrier, which is distinct from the conventional concept of forming the insulator barrier layer near the transparent conduction film. Also, the structure with the insulator thin barrier layer formed near the lower electrode, opposed to the ITO film, solves the interface problem of the ITO film because it provides an improved photo current/dark current ratio.

• Journal of Agricultural Extension & Community Development
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• v.15 no.3
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• pp.433-460
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• 2008

The objectives of this study were to figure out the relationships of factors, e-quality, interactivity, trust and switching barrier, to affect the online customers loyalty. Moreover, e-quality was considered because of the problem of ssability originated from the environment that a lot of information and products are given at online business. This study employs a survey method to empirically test the proposed research model. A survey questionnaire was developed and 100 responses were collected. The data were analyzed using PLS method, a structural equation modeling method. The results of the study indicate that e-quality, interactivity, and trust influence switching barrier and that the switching barrier affects virtual relationship, which has an positive effect on loyalty. This study provides valuable theoretical and practical perspectives that e-quality is the most influential factor on virtual relationship and that, of the three factors of switching barrier, the virtual relationship is the most effective one to prevent customers online from changing their main online shop for products.

• Journal of the Korean Graphic Arts Communication Society
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• v.21 no.2
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• pp.67-74
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• 2003

Barrier ribs for PDP(plasma display panel) are commonly utilized to have uniform height and width and to prevent opical crosstalk between adjacent cells. The requirements for such barrier ribs are uniform height and shape, low outgassing rate and low porosity, high aspect ratio, and fine resolution. In this study, we are studied about that to make efficiency of material and high quality barrier ribs for PDP. As a result, could got high barrier ribs of $140{\mu}m$ evenly in 1th phenomenon using watersoluble UV curing resin and know that flatness of upper part is also very good.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.1
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• pp.32-39
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• 2008

Tunnel oxide of non-volatile memory (NVM) devices would be very difficult to downscale if ten-year data retention were still needed. This requirement limits further improvement of device performance in terms of programming speed and operating voltages. Consequently, for low-power applications with Fowler-Nordheim programming such as NAND, program and erase voltages are essentially sustained at unacceptably high levels. A promising solution for tunnel oxide scaling is tunnel barrier engineering (TBE), which uses multiple dielectric stacks to enhance field-sensitivity. This allows for shorter writing/erasing times and/or lower operating voltages than single $SiO_2$ tunnel oxide without altering the ten-year data retention constraint. In this paper, two approaches for tunnel barrier engineering are compared: the crested barrier and variable oxide thickness. Key results of TBE and its applications for NVM are also addressed.