• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.225-225
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• 2010

In this study, the optimum structure of a magnetic thin film inductor was designed for application of DC-DC converters. The $Ni_{81}Fe_{19}$ (at%) alloy was selected as a high-frequency($\geq$ MHz) magnetic thin film core material and deposited on various substrates (bare Si, $SiO_2$ coated Si) using a high vacuum RF magnetron sputtering system. As-deposited NiFe thin films show similar magnetic properties compared to bulk NiFe alloys, indicating that they have a good film quality. The optimum design of solenoid-type magnetic thin film inductors was performed utilizing a Maxwell computer simulator (Ansoft HFSS V7.0 for PC) and parameters obtained from the magnetic properties of magnetic core materials selected. The high-frequency characteristics of the inductance(L) and quality factor(Q) obtained for the designed inductors through simulation agreed well with those obtained by theoretical calculations, confirming that the simulated result is realistic. The optimum structure of high-performance ($Q{\geq}60$, $L\;=\;1{\mu}H$, efficiency${\geq}90%$), high-frequency (${\geq}5MHz$), and solenoid-type magnetic thin film inductors was designed successfully.

• 전기전자학회논문지
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• 제12권3호
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• pp.138-143
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• 2008

본 논문에서 기존 반도체공정들이 갖는 리소그래피와 식각 등의 공정단계를 배제하는 direct-write 공정과 LAM(Laser Ablation of Microparticles) 공정을 이용하여 친환경적인 이점을 가질 수 있는 나선형 인덕터의 구조를 제안하고 주파수 특성을 확인하였다. 인덕터의 구조는 Si를 540${\mu}m$, $SiO_2$를 3${\mu}m$으로 하였으며, Cu 코일의 폭과 선간의 간격은 LAM 공정과 direct-write 공정을 이용할 수 있도록 각각 30${\mu}m$으로 설정하여 2회 권선하였다. 나선형 박막 인덕터의 성능을 나타내는 인덕턴스, quality-factor, SRF에 대한 주파수 특성을 HFSS로 시뮬레이션 하였다. Underpass와 via가 제거된 인덕터는 300-800MHz 범위에서 1.11nH의 인덕턴스, 5GHz에서 최대 38 정도의 품질계수를 가지며, SRF는 18GHz로 시뮬레이션 결과를 얻었다. 반면에 underpass와 via를 가지는 일반적인 인덕터는 300-800MHz 범위에서 1.12nH의 인덕턴스, 5GHz에서 최대 35 정도의 품질계수를 가지며, SRF는 16GHz로 시뮬레이션 결과를 얻을 수 있었다.

• 한국산학기술학회논문지
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• 제13권3호
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• pp.1284-1287
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• 2012

본 논문에서 underpass와 via를 갖지 않는 팔각 나선형 박막 인덕터 구조를 제안하고 주파수 특성을 확인하였다. 인덕터의 구조는 Si를 $300{\mu}m$, $SiO_2$를 $7{\mu}m$으로 하였으며, Cu 코일의 폭과 선간의 간격은 각각 $20{\mu}m$으로 설정하여 3회 권선하였다. 나선형 박막 인덕터의 성능을 나타내는 인덕턴스, quality-factor, SRF에 대한 주파수 특성을 HFSS로 시뮬레이션 하였다. 팔각 나선형 박막 인덕터는 0.8~1.8GHz 범위에서 2.5nH의 인덕턴스, 5GHz에서 최대 18.9 정도의 품질계수를 가지며, SRF는 11.1GHz로 시뮬레이션 결과를 얻었다. 반면에 사각 나선형 박막 인덕터는 0.8~1.8GHz 범위에서 2.8nH의 인덕턴스, 4.9GHz에서 최대 18.9 정도의 품질계수를 가지며, SRF는 10.3GHz로 시뮬레이션 결과를 얻을 수 있었다.

• 한국산학기술학회논문지
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• 제12권9호
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• pp.4101-4106
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• 2011

본 논문에서 기존 underpass와 via를 갖는 단층 나선형 박막 인덕터를 확장하여 제한된 점유면적 내에서 인덕턴스를 증가시킬 수 있는 하층 나선형 코일과 via를 갖는 2층 나선형 박막 인덕터의 구조를 제안하고 주파수 특성을 확인하였다. 인덕터의 구조는 Si를 $300{\mu}m$, $SiO_2$를 $7{\mu}m$으로 하였으며, Cu 코일의 폭과 선간의 간격은 각각 $20{\mu}m$으로 설정하여 3회 권선하였다. 나선형 박막 인덕터의 성능을 나타내는 인덕턴스, quality-factor, SRF에 대한 주파수 특성을 HFSS로 시뮬레이션 하였다. 2층 나선형 박막 인덕터는 0.8~1.8GHz 범위에서 3.2nH의 인덕턴스, 2.5GHz에서 최대 8.2 정도의 품질계수를 가지며, SRF는 5.8GHz로 시뮬레이션 결과를 얻었다. 반면에 단층 나선형 박막 인덕터는 0.8~1.8GHz 범위에서 1.5nH의 인덕턴스, 8GHz에서 최대 18 정도의 품질계수를 가지며, SRF는 19.2GHz로 시뮬레이션 결과를 얻을 수 있었다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제4권3호
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• pp.149-167
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• 2004

Passive components are indispensable in the design and development of microchips for high-frequency applications. Inductors in particular are used frequently in radio frequency (RF) IC's such as low-noise amplifiers and oscillators. This paper gives a broad overview on the on-chip spiral inductors. The design concept and modeling approach of the typical square-shaped spiral inductor are first addressed. This is followed by the discussions of advanced structures for the enhancement of inductor performance. Research works reported in the literature are summarized to aid the understanding of the recent development of such devices.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.139-142
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• 2001

As microeletronics technology continues to progress, there is also a continuous demand on highly integration and miniaturization of systems. For example, it is desirable to package several integrated circuits together in multilayer structure, such as multichip modules, to achieve higher levels of compactness and higher performance. Passive components (i.e., capacitors, resistors, and inductors) are very important for many MCM applications. In addition, the low-temperature co-fired ceramic (LTCC) process has considerable potential for embedding passive components in a small area at a low cost. In this paper, we investigate a method of statistically modeling integrated passive devices from just a small number of test structures. A set of LTCC inductors is fabricated and their scattering parameters (5-parameters) are measured for a range of frequencies from 50MHz to 5GHz. An accurate model for each test structure is obtained by using a building block based modeling methodology and circuit parameter optimization using the HSPICE circuit simulator.

• JSTS:Journal of Semiconductor Technology and Science
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• 제2권4호
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• pp.295-301
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• 2002

In this paper, solenoid-type 3-D passives (inductors and transformers) have been designed, fabricated, and characterized by using electroplating techniques, wire bonding techniques, multi-layer thick photoresist, and low temperature processes which are compatible with semiconductor circuitry fabrication. Two different fabrication approaches are performed to develop the solenoid-type 3-D passives and relationship of performance characteristics and geometry is also deeply investigated such as windings, cross-sectional area of core, spacing between windings, and turn ratio. Fully integrated inductor has a quality factor of 31 at 6 GHz, an inductance of 2.7 nH, and a self resonant frequency of 15.8 GHz. Bonded wire inductor has a quality factor of 120, an inductance of 20 nH, and a self resonant frequency of 8 GHz. Integrated transformers with turn ratios of 1:1 and n:l have the minimum insertion loss of about 0.6 dB and the wide bandwidth of a few GHz.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1498-1499
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• 1998

Thin film inductors of 10 mm ${\times}$ 10 mm with spiral pattern of 14 turns were fabricated by sputtering, photo-masking, and etching processes. Their impedence characteristics and annealing after effects were investigated. After magnetic annealing, the impedence characteristics of the inductors were improved at comparatively low frequencies, but the tendencies of it for thr frequency changes were almost same. These improvement was caused by the annihilation of the internal stresses of films, Uniaxial field annealed thin film inductor had an inductance of 1000 nH, resistance of 6 $\Omega$, and quality factor of 1 at 2 MHz.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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• pp.233-236
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• 2002

This paper has been designed and fabricated C-type micro, high-performance solenoid RF chip inductors with the size of 1.58$\times$0.82r0.94m0. The high frequency characteristics of simulated results obtained by HFSS were compared to those of measured results obtained by RF Impedance/Material Analyzer (HP16193A). Although the simulated inductance values were two times larger than the measured values and there are discrepancies in SRFs between simulated and measured values, it was observed that tile Q-factor values for fabricated inductors could be predicted from the simulated values.

• 한국전기전자재료학회논문지
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• 제19권8호
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• pp.780-784
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• 2006

We present high aspect ratio air-core solenoid inductors with $100{\mu}m\;and\;200{\mu}m$ tall via structures on Pyrex wafer. The effect of various parameters such as different number of turns, via heights, pitch distance between turns on inductor's radio frequency (RF) characteristics have been studied. The highest Q factor we obtained from various solenoid inductors is 72.8 at 9.7 GHz, which was produced by a 3-turn inductor.