• Maxillofacial Plastic and Reconstructive Surgery
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• v.42
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• pp.23.1-23.11
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• 2020

Background: 4-Hexylresorcinol (4HR) is able to increase angiogenesis. However, its molecular mechanism in the human endothelial cells has not been clarified. Methods: As endothelial cells are important in angiogenesis, we treated the human umbilical vein endothelial cells (HUVECs) with 4HR and investigated protein expressional changes by immunoprecipitation high-performance liquid chromatography (IP-HPLC) using 96 antisera. Results: Here, we found that 4HR upregulated transforming growth factor-β (TGF-β)/SMAD/vascular endothelial growth factor (VEGF) signaling, RAF-B/ERK and p38 signaling, and M2 macrophage polarization pathways. 4HR also increased expression of caspases and subsequent cellular apoptosis. Mechanistically, 4HR increased TGF-β1 production and subsequent activation of SMADs/VEGFs, RAF-B/ERK and p38 signaling, and M2 macrophage polarization. Conclusion: Collectively, 4HR activates TGF-β/SMAD/VEGF signaling in endothelial cells and induced vascular regeneration and remodeling for wound healing.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.20.2-20.2
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• 2011

III-nitrides have attracted much attention for optoelectronic device applications whose emission wavelengths ranging from green to ultraviolet due to their wide band gap. However, due to the strong polarization properties of conventional c-plane III-nitrides, the built-in polarization-induced electric field limits the performance of optical devices. Therefore, there has been a renewed interest in the growth of nonpolar III-nitride semiconductors for polarization free heterostructure optoelectronic and electronic devices. However, the crystal and the optical quality of nonpolar/semipolar GaN have been poorer than those of conventional c-plane GaN, resulting in the relative poor optical and electrical properties of light emitting diodes (LEDs). In this presentation, I will discuss the growth and characterization of high quality nonpolar a-plane and semipolar (11-22) GaN and InGaN multiple quantum wells (MQWs) grown on r- and m-plane sapphire substrates, respectively, by using metalorganic chemical vapor deposition (MOCVD) without a low temperature GaN buffer layer. Especially, the epitaxial lateral overgrowth (ELO) technique will be also discussed to reduce the dislocation density and enhance the performance of nonpolar and semipolar GaN-based LEDs.

• Korean Journal of Optics and Photonics
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• v.15 no.6
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• pp.503-510
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• 2004

We propose a novel vertical directional coupler switch using a vertical directional coupler with polarization independent coupling lengths employing the doublesided deep-ridge waveguide structure. This switch is composed of a switching operation induced section with symmetric structures and an extinction ratio enhanced section with asymmetric structures. We present design methods and examples for this switch with very short lengths and very high extinction ratios larger than 30 dB for both TE and TM modes in cases of both cross and bar states.

• Journal of the Optical Society of Korea
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• v.13 no.2
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• pp.227-233
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• 2009

We investigated the polarization-mode dispersion (PMD) tolerance for 40Gb/s non-return to zero (NRZ), duobinary NRZ, return to zero (RZ), carrier-suppressed RZ (CS-RZ), and duobinary-carrier-suppressed RZ (DCS-RZ) modulation formats with a forward error correction (FEC) coding. The power penalty has been calculated as a measure of the system performance due to PMD. After comparison of the PMD tolerance of various modulation formats, our results suggest that RZ signals have the best tolerance against the effect of first-order PMD only. The duobinary NRZ modulation format is most resilient to PMD when both first- and second-order PMD are considered. However, the duobinary NRZ modulation format is the most sensitive to the incident angle of the input signal to a fiber axis in the presence of first- and second-order PMD, leading to incident angle-dependent power penalty. The coding gain by FEC can cope with the power penalties induced by first- and second-order PMD up to a DGD value of 16ps.

• Journal of the Korean Ceramic Society
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• v.50 no.1
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• pp.82-86
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• 2013

A poled lead zirconate titanate (PZT) cube specimen is subjected to impulse-type compressive stress with increasing magnitude in parallel to the poling direction at four room and high temperatures. During the ferroelastic domain switching induced by the compressive stress, electric displacement in the poling direction and longitudinal and transverse strains are measured. Using the measured responses, linear material properties, namely, the piezoelectric and elastic compliance coefficients, are evaluated by a graphical method, and the effects of stress and temperature are analyzed. Finally, the dependency of the evaluated linear material properties on relative remnant polarization is analyzed and discussed.

• Korean Journal of Materials Research
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• v.14 no.10
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• pp.707-712
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• 2004

$BiFeO_3$ films grown on (111) $SrTiO_3$ substrate have a rhombohedral structure, identical to that of single crystals. On the other hand, films grown on (110) or (001) $SrTiO_3$ substrate are monoclinically distorted from the rhombohedral structure due to the epitaxial constraint. The easy axis of spontaneous polarization is close to [111] for the variously oriented films. Dramatically enhanced polarization and magnetization have been found for hetero-epitaxially grown $BiFeO_3$ thin films comparing to that of $BiFeO_3$ crystals. The results are explained in terms of an epitaxially-induced transition between cycloidal and homogeneous spin states, via magneto-electric interactions.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.3 s.36
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• pp.219-226
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• 2005

When a ferroelectric film has an inhomogeneous distribution of charged defects, a voltage shift in the polarization curve is induced by the internal field generated in the film. The direction and the magnitude of voltage shift in the P-V hysteresis curves obtained by the Sawyer-Tower method are different from those obtained by the virtual ground method. In this study, the asymmetric behavior in the P-V hysteresis curves of inhomogeneous ferroelectric films was investigated with a physical model and the polarization curves obtained by the Sawyer-Tower and the virtual ground methods are compared.

• Korean Journal of Materials Research
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• v.7 no.7
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• pp.547-558
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• 1997

Pb(Mg$_{1}$3/Nb$_{2}$3)O$_{3}$[PMN]-PbTiO$_{3}$[PT]계 고용체의 상경계조성(MPB)영역에 대해 La을 첨가하여 변성시킨 La변성 (1-x)PMN-xPT(x=0.35) 고용체를 만들어 온도-유전율 특성, 전계유기 분극특성 및 변위특성을 조사하였다. PMN-PT의 상경영역의 조성인 x=0.35에 대해 La함량을 0-10at%까지 변화시켰다. PMN-PT계 고용체에서 PT 의 함량이 증가함에 따라 전계유기변위 및 히스테리시스 특성이 모두 증가하였다. 전계유기변위 값 $\varepsilon$ 는 능면정과 정방정의 공존영역인 MPB(x=0.35)조성에서 가장 높은 값($\varepsilon$ = 2 x $10^{-3}$)을 보여 주었다. MPB조성에 대해 La을 첨가한 계의 전계유기변위를 조사한 결과 La의 첨가량이 적을 때 (La=0-5at%)는 La의 함량이 증가함에 따라 히스테리시스 특성이 감소하였고 $\varepsilon$ 은 증가하여 고성능의 액튜에이터 재료에 적합한 조성물로 기대된다.

• Journal of the Korean Ceramic Society
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• v.54 no.3
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• pp.235-242
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• 2017

Changes in polarization and thermal expansion coefficients during temperature increase of a poled lead zirconate titanate (PZT) cube specimen switched by an electric field at room temperature are measured. The measured data are analyzed to construct governing differential equations for polarization and strain changes. By solving the differential equations, an experimental formula for the high temperature behavior of ferroelectric materials is obtained. It is found that the predictions by the formula are in good agreement with measures. From the viewpoint of macroscopic remnant state variables, it appears that the processes of electric field-induced switching at different temperatures are identical and independent of temperature between $20^{\circ}C$ and $110^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.594-597
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• 2003

In the present study, the piezoelectricity and polarization of multilayer ceramic actuator, being designed to stack PMN-PZ-PT ceramic layers and Ag-Pd electrode layers alternatively, were investigated under a consideration of geometric factor, the volume ratio of the ceramic to the electrode layers. The actuators were fabricated by tape casting of 0.2Pb(Mg1/3Nb2/3)O3-0.38PbZrO3-0.42PbTiO3 followed by lamination and burnout & co-firing processes. The actuators of 10 10 0.62 nm3 in size were formed in a way that 60 200 m thick ceramics were stacked alternatively with 5 m thick electrode layer. Increases in polarization and electric field-induced displacement with thickness of the ceramic layer were attributed to change of 90o/180o domain ratio, which was affected by interlayer internal stress. The piezoelectricity and actuation behaviors were found to depend upon the volume ratio (or thickness ratio) of ceramic to electrode layers.