• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.807-809
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• 1998

We give pressure stimulation into organic thin films and detect the induced displacement current, In processing of a device manufacture, we can see the process is good from the change of a surface pressure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/organic thin films(Kapton-Polyimide)/Au and I-V properties of the device is measured from 0(V) to +5(V). The maximum value of measured current is increased as the number of accumulated layers are decreased. The resistance for the number of accumulated layers, the energy density for an input voltage show desired results.

• Journal of the Korean Vacuum Society
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• v.8 no.4A
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• pp.403-409
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• 1999

The surface state of Ar plasma-exposed Fe doped SI-InP have been investigated by photoreflectance (PR). From Ar plasma-exposed InP with 30 W for 10sec, the PR signals include a peak $(E_{Ar})$ that is located at 1.336 eV. We think that this peak was originated shallow level related to $V_In-V_P$. And we compared this level with the level obtained by surface photovoltage spectroscopy (SPV) measurement. The result of the PR agrees well with that from SPV. Additionally, Ar plasma induced phosphorus vacancy is related to shallow level. Therefore, the change of surface electric field are attributed to the shallow level. This level is caused by the existence of phsophorus vacancy on InP surface.

• Journal of the Korean Ceramic Society
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• v.29 no.3
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• pp.183-188
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• 1992

The physical properties of 0.5PZT-0.5(PNN-PZN) ceramics have been investigated as a function of PZN content. A pyrochlore phase exists in the range of 600∼850$^{\circ}C$ and a stable perovskite phase appears above 850$^{\circ}C$. The piezoelectric properties (except electro-mechanical coupling factor) of 0.5PZT-0.5(PNN-PZN) ceramics showed almost linear relationships of PZN content within the range of 0.5PZT-0.5PNN system and 0.5PZT-0.5PZN system. The temperature dependence of piezoelectric constant, the electric field dependence of induced strain and a bend strength are improved by addition of PZN.

• 유체기계공업학회:학술대회논문집
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• 2006.08a
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• pp.497-500
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• 2006

An theoretical analysis on the electro-osmotic flow in a 2-dimensional slit, that is induced by an external electric field acting on the electrical double layers near the slit wall, was performed. Especially, although there were many studies on the interacting electrical double layers, it was found in this study that they have several physical or mathematical fallacies. To resolve these, the general solution on the charge-regulating slit with the height as a parameter was obtained. The results of this work can provide the electrokinetic solution of nanoscale slit with the electrical double layer interaction as well as that of microscale slit without the interaction and can be used as the benchmark of a numerical analysis and the reference of electrokinetic flow path design.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.3
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• pp.164-169
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• 2002

This paper mainly discusses the hard breakdown of 2.2-nm-thick $SiO_2$ films. It is shown that the hard breakdown event of a 2.2-nm-thick $SiO_2$ film greatly depends on the applied electric field. It is strongly suggested that the local weak spots created by applying a low initial stress to a 2.2-nm-thick $SiO_2$film resist the onset of hard breakdown. In other words, it is anticipated that the stored electrostatic energy is fast dissipated by trap-assisted tunneling in 2.2-nm-thick $SiO_2$ film. Consequently, it is strongly suggested that 2.2-nm-thick $SiO_2$ films are intrinsically quite robust.

• Journal of the Semiconductor & Display Technology
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• v.5 no.1 s.14
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• pp.21-25
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• 2006

To improve the performance of organic thin film transistor, we investigated the properties of gate insulator's surface according to the leakage current by I-V measurement. The surface was treated by the dilute n-octadecyltrichlorosilane solution. The alkyl group of n-octadecyltrichlorosilane induced the electron tunneling and the electron tunneling current caused the breakdown at high electric field, consequently shifting the breakdown voltage. The 0.5% sample with an electron-rich group was found to have a large leakage current and a low barrier height because of the effect of an energy barrier lowered by, thermionic current, which is called the Schottky contact. The surface properties of the insulator were analyzed by I-V measurement using the effect of Poole-Frankel emission.

• Proceedings of the Optical Society of Korea Conference
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• 2000.02a
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• pp.26-27
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• 2000

층 성장 방향으로 정전기장을 걸어준 GaAs/AlGaAs 초격자 반도체에서, 두 개의 100 fs 광학 펄스에 의해 생성된 four-wave-mixing(FWM) 신호의 dephasing 현상을 반도체 블록 방정식을 사용해서 분석하고자 한다. 이 FWM 신호의 이완은 전하-전하와 전하-포논 충돌과 같은 phase-breaking 충돌 과정들에 의해서 야기되는 비선형적인 광분극의 dephasing에 의해서 결정되어 진다.$^{(1)}$ 이 비선형적인 광분극은 펄스들에 의해서 동시에 여기되어 나타나는 자유전하 분극과 엑시톤 분극으로 구성되는데, 이 두 분극의 이완시간 특성은 서로 다른 거동을 보인다.$^{(2,3)}$ GaAs/AlGaAs 초격자 반도체에서 이 자유 전하 분극의 dephasing이 엑시톤 분극의 dephasing 보다 훨씬 빠르게 일어나고, 엑시톤이 자유 전하의 특성을 갖게 될수록, 즉 온도가 높을수록 또 엑시톤이 3차원의 특성을 가질수록 이 dephasing은 빠르게 일어난다.$^{(4)}$ (중략)

• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.2
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• pp.110-116
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• 2009

The prominent advantages of Dual Material Surrounding Gate (DMSG) MOSFETs are higher speed, higher current drive, lower power consumption, enhanced short channel immunity and increased packing density, thus promising new opportunities for scaling and advanced design. In this Paper, we present Transconductance-to-drain current ratio and electric field distribution model for dual material surrounding gate (DMSGTs) MOSFETs. Transconductance-to-drain current ratio is a better criterion to access the performance of a device than the transconductance. This proposed model offers the basic designing guidance for dual material surrounding gate MOSFETs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.8
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• pp.524-530
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• 2015

We propose a three-electrode type electronic paper display and its fabrication process to realize single color at the same display panel. We establish a fabrication process with the mixing of electronic ink, loading of this ink, electronic ink assembly, packaging and driving. Also, we discuss an operating principle of this panel and the induced image reversal phenomenon by electric field area of the lower electrodes. This phenomenon is not occurred for the panel having $10{\mu}m$ electrode space. By this pixelation structure like this three-electronic paper display, a single color realization without color filter is possible and various kind of color is defined by a dye selection for charged particles and electrically neutral fluid.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.547-551
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• 1995

We analyze the nonlinearity of chiral media and coupled-mode theory of chiral multilayers. In first topic, second order nonlinear coupled equations are constructed and a phase matchine method is suggested. This approach can be developed to higher order nonlinearity and electric-field-induced second harmonic generation. In second topic, coupled mode equation in chiral multilayers is constructed, and solved for both codirectional coupling and contradirectional coupling. There is a previous formulation about chiral mutilayers[1] with 4$\times$4 matrix but it did not give detail results, so this approach will be compared with that.