• KIEE International Transactions on Electrophysics and Applications
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• 제3C권3호
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• pp.81-85
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• 2003

This paper describes the results of experiments made to examine the behavior of water droplet on the polymer surface and influence of the charge. In this experiment, water droplet was put on the polymer surface in an applied AC electric field and the investigations of its behavior were done with a high-speed video camera. It can be observed that the droplet elongates and vibrates with being pulled towards the positive electrode in a wave synchronism with the frequency of the power source. The volume and conductivity of water droplet are shown to have a marked effect on the mode of discharge development. These behaviors may be caused by the change of electric field of applied AC voltage and induced charges in/on the water droplet.

• Korea-Australia Rheology Journal
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• 제15권2호
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• pp.83-90
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• 2003

In cases of the microfluidic channel, the electrokinetic influence on the transport behavior can be found. The externally applied body force originated from the electrostatic interaction between the nonlinear Poisson-Boltzmann field and the flow-induced electrical field is applied in the equation of motion. The electrostatic potential profile is computed a priori by applying the finite difference scheme, and an analytical solution to the Navier-Stokes equation of motion for slit-like microchannel is obtained via the Green's function. An explicit analytical expression for the induced electrokinetic potential is derived as functions of relevant physicochemical parameters. The effects of the electric double layer, the zeta potential of the solid surface, and the charge condition of the channel wall on the velocity profile as well as the electroviscous behavior are examined. With increases in either electric double layer or zeta potential, the average fluid velocity in the channel of same charge is entirely reduced, whereas the electroviscous effect becomes stronger. We observed an opposite behavior in the channel of opposite charge, where the attractive electrostatic interactions are presented.

• Journal of Korean Vacuum Science & Technology
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• 제5권1호
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• pp.7-10
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• 2001

Ion induced secondary electron emission coefficients γ of protecting layers of an AC plasma display panel(AC-PDP) have been measured. In order to solve the surface charging effect during the measurement at insulating samples like MgO, a new method with the patterned gold line charge neutralization has been introduced. The measurement was performed at the samples, MgO and MgO+MgF$_2$, which showed a great difference in the firing voltage between the two protecting layers. The γ value has been compared with the firing voltage Vf of the AC-PDP with the same protecting layer. Correct relationship between γ and Vf has been observed. Thus, the patterned gold line method has been proven to be successful for the measurement of the secondary electron emission yield at insulator sample surfaces.

• 대한전자공학회논문지
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• 제25권7호
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• pp.780-790
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• 1988

We have studied the hot-carrier-induced degradation caused by the high channel electric field due to the decrease of the gate length of MOSFET used in VLSI. Under DC stress, the condition in which maximum substrate current occures gave the worst degradation. Under AC dynamic stress, other conditions, the pulse shape and the falling rate, gave enormous effects on the degradation phenomena, especially at 77K. Threshold voltage, transconductance, channel conductance and gate current were measured and compared under various stress conditions. The threshold voltage was almost completely recovered by hot-injection stress as a reverse-stress. But, the transconductance was rapidly degraded under hot-hole injection and recovered by sequential hot-electron stress. The Si-SiO2 interface state density was analyzed by a charge pumping technique and the charge pumping current showed the same trend as the threshold voltage shift in degradation process.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1609-1612
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• 2006

Transient currents were measured in nematic liquid-crystal cells with and without doping of multiwalled carbon nanotubes. Comparative results suggest that the field-screening effect induced by the adsorbed charge is substantially suppressed by the carbon-nanotube dopant, leading to a reduction of the driving voltage and improved performance of display properties.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2004년도 동계학술연구발표회 논문개요집
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• pp.151-151
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• 2004

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.375-378
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• 2002

There has recently been a great deal of interest in amorphous selenium for application of digital x-ray image sensor. The initial number of the electron-hole induced by interaction a-Se with x-ray photons and the collection efficiency to surface of generated charges are important parameters for x-ray sensitivity of the a-Se. Therefore, in this paper, we analyzed that thickness of a-Se film and electric field is affected on the initial number of electron-hole and the collection efficiency. The experimental value of x-ray induced charge about the various thickness and the electric field is compared with estimated absorbed energy through MCNP 4C code to analyze the mechanism x-ray induced signal of a-Se. The experimental results showed that the electric field depends on initial escape coefficient and the thickness depends on collection coefficient than escape efficient.

• 한국안전학회지
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• 제16권2호
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• pp.57-62
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• 2001

In order to analyze the mechanism of semiconductor device damages by ESD, this paper adopts a new charged-device model(CDM), field-induced charged nudel(FCDM), simulator that is suitable for rapid routine testing of semiconductor devices and provides a fast and inexpensive test that faithfully represents ESD hazards in plants. The high voltage applied to the device under test is raised by the fie]d of non-contacting electrodes in the FCDM simulator. which avoids premature device stressing and permits a faster test cycle. Discharge current md time are measured and calculated The FCDM simulator places the device at a huh voltage without transferring charge to it, by using a non-contacting electrode. The only charge transfer in the FCMD simulator happens during the discharge. This paper examine the field charging mechanism, measure device thresholds, and analyze failure modes. The FCDM simulator provides a Int and inexpensive test that faithfully represents factory ESD hazards. The damaged devices obtained in the simulator are analyzed and evaluated by SEM Also the results in this paper can be used for to prevent semiconductor devices from ESD hazards.

• Transactions on Electrical and Electronic Materials
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• 제18권2호
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• pp.78-88
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• 2017

Cantilever beam MEMS piezoelectric accelerometers are the simplest and most widely used accelerometer structure. This paper discusses the design of a piezoelectric accelerometer exclusively for SHM applications. While such accelerometers need to operate at a lower frequency range, they also need to possess high sensitivity and low noise floor. The availability of a simple model for deflection, charge, and voltage sensitivities will make the accelerometer design procedure less cumbersome. However, a review of the open literature suggests that such a model has not yet been proposed. In addition, previous works either depended on FEM analysis or only reported on the fabrication and characterization of piezoelectric accelerometers. Hence, this paper presents, for the first time, a simple analytical model developed for the deflection, induced voltage, and charge sensitivity of a cantilever beam piezoelectric accelerometer.The model is then verified using FEM analysis for a range of different cases. Further, the model was validated by comparing the induced voltages of an accelerometer estimated using this model with experimental voltages measured in the accelerometer after fabrication. Subsequently, the design of an accelerometer is demonstrated for SHM applications using the analytical model developed in this work. The designed accelerometer has 60 mV/g voltage sensitivity and 2.4 pC/g charge sensitivity, which are relatively high values compared to those of the piezoresistive and capacitive accelerometers for SHM applications reported earlier.

• 한국응용과학기술학회지
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• 제33권2호
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• pp.385-390
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• 2016

연구에서 나노 알루미나와 마그네지아의 첨가에 의한 304 스테인레스 스틸에 $170^{\circ}C$ 2시간 열 경화시켰다. 레이저유도 분광학에 의한 코팅된 시료를 전하결합 장치와 SEM을 활용한 장치를 설계하여 시험 측정하였다. 이 결과 나노 알루미나와 마그네지아가 함유된 세라믹 코팅이 나노 무기화합물이 함유되지 않은 시료보다 부착성, 내스크래치성이 우수하였으며, 또한 산용액속에서 시료의 질량감소의 변화가 매우 작았다. 그리하여 본 연구는 304 스테인레스 스틸의 내부식성을 개선하기 위해 시료가 코팅되었으며, 분석공정이 설계되어 고분해능 CCD와 함께 분석되었다. 요즈음, 스테인레스 스틸의 코팅은 산업에 특이응용이 발전됨에 따라 위생학, 우주항공, 기기장치, 관측 등의 분야 등에 산업적 요구가 증가되고 있다.