• Electrical & Electronic Materials
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• v.8 no.6
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• pp.699-707
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• 1995

The material that is both conductive in electricity and transparent to the visible ray is called transparent conducting thin film. It has many fields of application such as Solar Cell, Liquid Crystal display, Vidicon on T.V, transparent electrical heater, selective optical filter, and a optical electric device , etc. In the recent papers on several TCO( transparent conducting oxide ) material, the study is mainly focusing on ITO(indium tin oxide) because ITO shows good results on both optical and electrical properties. Nowaday, in the development of LCD(Liquid Crystal display), the low temperature process to reduce the production cost and to deposit ITO on polymer substrate (or low melting substrate) has been demanded. In this study, we prepared indium tin oxide(ITO) by a cylindrical DC magnetron sputtering with Indium-tin (9:1) alloy target instead of indium-tin oxide target. The resistivity of the film deposited in oxygen partial pressure of 5% and substrate temperature of 140.deg. C. is 1.6*10$\^$-4/.ohm..cm with 85% optical transmission in viaible ray.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.446-447
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• 2007

The rapid thermal annealing effect of transparent IZTO(indium zinc oxide) and IAZO(indium alminium zinc oxide) films grown on glass substrate for solar cell or flat panel displays(FPDs) was studied. We prepared IZTO using RF magnetron sputtering and IAZO using DC co-sputtering method. Subsequently, using rapid thermal annealing(RTA) system, prepared IZTO and IAZO films were annealed at 300, 400, 500, $600^{\circ}C$ for 90sec. In addition, Electrical and optical characteristics were measured by Hall effect measurement and UV/Vis spectrometer examinations, respectively. To analyze structural properties and surface smoothness of the IZTO and IAZO films, XRD and SEM examinations were performed, respectively. It was shown that IZTO and IAZO films exhibited microcrystalline structure over $400^{\circ}C$ and amorphous structural regardless of RTA temperature, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.340-343
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• 2000

ITO(Indium Tin Oxide) films for transparent electrodes of FPD(Flat Panel Display) were patterned in atmosphere using laser. A pulse type(repetition rate of 10 Hz) Q-switched Nd:YAG laser which can generate the fundamental wavelength at 1064 nm or its harmonics(532, 266 nm) was used for Patterning of the ITO film. In case of using the second harmonic(532 nm) of Nd:YAG laser, the ITO film(thickness of 20 nm) was removed clearly with a laser fluence of 5.2 J/$\textrm{cm}^2$ and a beam scan speed of 200${\mu}{\textrm}{m}$/s. But the glass substrate was damaged when the laser fluence was over 5.2 J/$\textrm{cm}^2$. We discussed the etching mechanism of the ITO film using Nd:YAG laser with observation of the etching characteristics including a depths and widths of ITO films as a function of laser fluence using SEM(Scanning Electron Microscopy) and surface profiler($\alpha$-step 500).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.3-3
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• 2010

We investigated the influence of the indium content on the threshold voltage ($V_{th}$) shift of sol-gel-derived indium-gallium-zinc oxide (IGZO) thin film transistors (TFTs). Surplus indium composition ratio into IGZO decreases the value of $V_{th}$ of IGZO TFTs showed huge $V_{th}$ shift in the negative direction. $V_{th}$ shift decreases from 10 to -28.2V as Indium composition ratio is increased. Because the free electron density is increased according to variation of the Indium composition ratio.

• Journal of Advanced Marine Engineering and Technology
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• v.40 no.4
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• pp.325-329
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• 2016

In this study, we investigated the feasibility of using printed Indium Tin Oxide (ITO) film as a remote sensor for Hazardous and Noxious Substances (HNS). To improve the quality of the ITO films, binder mixing ratio, Sn concentration in ITO, thermal treatment temperature, and printing process conditions were optimized. We fabricated an electrical resistance-type liquid sensor, and to confirm the sensor operation, the change in resistance in air and seawater was monitored. The change in resistance of the ITO sensor was explained in terms of reduction reaction on the surface. Further, the sensor was controlled by Arduino, and the remote data acquisition was demonstrated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.4
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• pp.400-406
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• 2024

Next-generation wide-bandgap semiconductors such as SiC, GaN, and Ga2O3 are being considered as potential replacements for current silicon-based power devices due to their high mobility, larger size, and production of high-quality wafers at a moderate cost. In this study, we investigate the gradual modulation of chemical composition in multi-stacked metal oxide semiconductor thin films to enhance the performance and bias stability of thin-film transistors (TFTs). It demonstrates that adjusting the Ga ratio in the indium gallium oxide (IGO) semiconductor allows for precise control over the threshold voltage and enhances device stability. Moreover, employing multiple deposition techniques addresses the inherent limitations of solution-processed amorphous oxide semiconductor TFTs by mitigating porosity induced by solvent evaporation. It is anticipated that solution-processed indium gallium oxide (IGO) semiconductors, with a Ga ratio exceeding 50%, can be utilized in the production of oxide semiconductors with wide band gaps. These materials hold promise for power electronic applications necessitating high voltage and current capabilities.

• Journal of the Korean Applied Science and Technology
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• v.31 no.4
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• pp.694-702
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• 2014

The micron-sized ITO(indium tin oxide) particles were prepared by spray pyrolysis from aqueous precursor solutions for indium, and tin and organic additives solution. Organic additives solution with citric acid(CA) and ethylene glycol(EG) were added to aqueous precursor solution for Indium and Tin. The obtained ITO particles prepared by spray pyrolysis from the aqueous solution without organic additives solution had spherical and filled morphologies whereas the obtained ITO particles with organic additives solution had more hollow and porous morphologies with increasing mole of organic additives. The micron-sized ITO particle with organic additives was changed fully to nano-sized ITO particle whereas the micron-sized ITO particle without organic additives was not changed fully to nano-sized ITO particle after post-treatment at $700^{\circ}C$ for 2 hours and wet-ball milling for 24 hours. The size of primary ITO particle by Debye-Scherrer formula and surface resistance of ITO pellet were measured.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.1
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• pp.8-12
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• 2005

Indium tin oxide(ITO) surface treated by Oxygen plasma has been in situ analyzed using XPS(X-ray Photoelectron Spectroscopy) and EDS(Energy Dispersive Spectroscopy), to investigate the relations between the properties of the ITO surface and the properties of OLED(Organic Light Emitting Diode). We measured electrical resistivity using Four-Point-Probe and calculated sheet resistance, and ITO surface roughness was measured by AFM(Atomic Force Microscope). We fabricated OLED using substrate that was treated optimum ITO surface. The plasma treatment of the ITO surface lowered the operating voltage of the OLED. We have obtained an improvement of luminance and decrease of turn-on voltage.

• Transactions on Electrical and Electronic Materials
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• v.7 no.5
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• pp.267-270
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• 2006

The Indium tin oxide (ITO) films were deposited on CR39 substrate using DC magnetron sputtering. ITO thin films deposited at room temperature because CR39 substrates its glass-transition temperature of is $130^{\circ}C$. ITO thin films used bottom and top electrode and for organic thin film transparent transistor.(OTFT) ITO thin film electrodes electrical properties and optical transparency properties in the visible wavelength range (300 - 800 nm) strongly dependent on volume of oxygen percent. For the optimum resistivity and transparency of ITO thin film electrode achieved with a 75 W plasma power, 10 % volume of oxygen and a 27 nm/min deposition rate. Above 85 % transparency in the visible wavelength range (300 - 800 nm) measured without post annealing process and $9.83{times}10{-4}{\Omega}cm$ a low resistivity was measured thickness of 300 nm.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.3
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• pp.561-565
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• 2007

We propose glass and PDMS (polydimethylsiloxane) chips for DNA amplification with continuous-flow PCR (polymerase chain reaction). The PDMS microchannel was fabricated using a negative molding method for sample injection. Three heaters and sensors of ITO (indium-tin-oxide) thin films were fabricated on glass chip. ITO heaters and sensors were calibrated accurately for the temperature control of the liquid flow. ITO heater generated stable heat versus applied power. ITO sensor resistance was changed linearly versus temperature increase as a RTD (resistance temperature detector) sensor. As a result, we enable precision temperature control of continuous-flow PCR chip. Using the continuous-flow PCR chip DNA plasmid pKS-GFP 720 bp was successfully amplified.