• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.437-440
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• 1998

We studied phosphorus doping effect on the epitaxial growth of $Si_{1-x}Ge_{x}$ film with high Ge fraction on Si substates at 550.deg. C by LPCVD. In a low $Ph_{3}$ partial pressure region such as below 1.25 mPa, the phosphorus dopant concentration increased linearly with increasing $PH_{3}$ partial pressure while the deposition rate and the Ge fraction were constant. In a higher $PH_{3}$ partial pressure region, the phosphorus dopant concentration and the deposition rate decreased, while the Ge fraction slightly increased. The deposition arate and the Ge fraction increased with increasing $GeH_{4}$ partial pressure while the phophours dopant concentration decreased. But the increasing rate of Ge fraction with incrasing $PH_{3}$ partial pressure was reduced at a high $GeH_{4}$ partial pressure. According to test results, it suggests that high surface coverage of phosphorus atoms suppress both the $SiH_{4}$ adsorption/reasction and the $GeH_{4}$ adsorption/reaction on the surfaces, and the effect is more stronger on $SiH_{4}$ than on $GeH_{4}$. In a higher $PH_{3}$ partial pressure region, the epitaxial growth is largely controlled by surface coverage effect of phosphorus atoms. The phosphorus surface coverage was slimited at a high $GeH_{4}$ partial pressure because adsorbed Ge atoms effectively suppresses the adsorption of phosphorus atoms.

• Journal of the Semiconductor & Display Technology
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• v.22 no.4
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• pp.53-58
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• 2023

The storage capacity of 3D-NAND flash memory has been enhanced by the multi-layer dielectrics. The deposition process has become more challenging due to the tight process margin and the demand for accurate process control. To reduce product costs and ensure successful processes, process diagnosis techniques incorporating artificial intelligence (AI) have been adopted in semiconductor manufacturing. Recently there is a growing interest in process diagnosis, and numerous studies have been conducted in this field. For higher model accuracy, various process and sensor data are required, such as optical emission spectroscopy (OES), quadrupole mass spectrometer (QMS), and equipment control state. Among them, OES is usually used for plasma diagnostic. However, OES data can be distorted by viewport contamination, leading to misunderstandings in plasma diagnosis. This issue is particularly emphasized in multi-dielectric deposition processes, such as oxide and nitride (ON) stack. Thus, it is crucial to understand the potential misunderstandings related to OES data distortion due to viewport contamination. This paper explores the potential for misunderstanding OES data due to data distortion in the ON stack process. It suggests the possibility of excessively evaluating process drift through comparisons with a QMS. This understanding can be utilized to develop diagnostic models and identify the effects of viewport contamination in ON stack processes.

• Economic and Environmental Geology
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• v.56 no.2
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• pp.115-123
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• 2023

We introduce a new 'image-mapping' in-situ U-Pb dating method using LA-ICP-MS, proposed by Drost et al. (2018), and show the characteristics and usability of this method through several examples of absolute age results determined by first applying it to samples from the Joseon Supergroup of the Early Paleozoic Era in Korea. Unlike the previous in-situ spot analysis, this in-situ U-Pb dating method for carbonate minerals can determine the absolute age with high reliability by applying the 'image-mapping' method of micro-sized domains based on micro-textural observation, as well as determine the absolute age of multiple geological 'events' that occurred after deposition. This was confirmed in the case of determining the syn-depositional age and the multiple post-depositional ages from carbonate minerals of the Makgol and the Daegi Formations. Therefore, if the 'image-mapping' in-situ U-Pb dating method is applied to determine the absolute age of various types of carbonate minerals that exist in various geological environments throughout the geologic era, it will be possible to secure new geological age information.

• Korean Journal of Materials Research
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• v.4 no.1
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• pp.9-23
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• 1994

Epitaxial $CoSi_2$ layer has been grown on NaCl(100) substrate at low deposition temperature($200^{\circ}C$) by multitarget bias cosputter deposition(MBCD). The phase sequence and crystallinity of deposited silicide as a function of deposition temperature and substrate bias voltage were studied by X-ray diffraction(XRD) and transmission electron microscopy(TEM) analysis. Crystalline Si was grown at $200^{\circ}C$ by metal induced crystallization(M1C) and self bias effect. In addition to, the MIC was analyzed both theoretically and experimentally. The observed phase sequence was $Co_2Si \to CoSi \to Cosi_2$ and was in good agreement with that predicted by effective heat of formation rule. The phase sequence, the CoSi(l11) preferred orientation, and the crystallinity had stronger dependence on the substrate bias voltage than the deposition temperature due to the collisional cascade mixing, the in-situ cleaning, and the increase in the number of nucleation sites by ion bombardment of growing surface. Grain growth induced by ion bombardment was observed with increasing substrate bias voltage at $200^{\circ}C$ and was interpreted with ion bombardment dissociation model. The parameters of $E_{Ar}\;and \alpha(V_s)$ were chosen to properly quantify the ion bombardment effect on the variation in crystallinty at $200^{\circ}C$ with increasing substrate bias voltage using Langmuir probe.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.190-193
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• 2002

The processing technology of organic thin-film transistors (Ons) performances have improved fur the last decade. Gate insulator layer has generally used inorganic layer, such as silicon oxide which has properties of a low electrical conductivity and a high breakdown field. However, inorganic insulating layers, which are formed at high temperature, may affect other layers termed on a substrate through preceding processes. On the other hand, organic insulating layers, which are formed at low temperature, dose not affect pre-process. Known wet-processing methods for fabricating organic insulating layers include a spin coating, dipping and Langmuir-Blodgett film processes. In this paper, we propose the new dry-processing method of organic gate dielectric film in field-effect transistors. Vapor deposition polymerization (VDP) that is mainly used to the conducting polymers is introduced to form the gate dielectric. This method is appropriate to mass production in various end-user applications, for example, flat panel displays, because it has the advantages of shadow mask patterning and in-situ dry process with flexible low-cost large area displays. Also we fabricated four by four active pixels with all-organic thin-film transistors and phosphorescent organic light emitting devices.

• Korean Journal of Materials Research
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• v.5 no.2
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• pp.197-202
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• 1995

The surface morphology and grain growth of amophous silicon (a-Si) films deposited by low pressure chemical vapor deposition (LPCVD) have been investigated as a function of deposition and in sltu annealing condition. The film deposited at the amorphous to polycrystalline transition temperature has an extra-rough, rugged surface with (311) t.exture. At the same deposition temperature, the grain structure tends to shirr. from the polycrystalline to the amorphous phase with increasing the film thickness. It is found that nucleation of a-Si during in situ annealing at the transition temperature without breaking the vacuum starts to occur from surface Si atom migration in contrast to a heterogeneous nucleation during film deposition.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.283.2-283.2
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• 2013

The variation of chemical and interfacial state during the growth of Ta2O5 films on the Si substrate by atomic layer deposition (ALD) was investigated using in-situ synchrotron radiation photoemission spectroscopy. A newly synthesized liquid precursor Ta(NtBu)(dmamp)2Me was used as the metal precursor, with Ar as a purging gas and H2O as the oxidant source. The core-level spectra of Si 2p, Ta 4f, and O 1s revealed that Ta suboxide and Si dioxide were formed at the initial stages of Ta2O5 growth. However, the Ta suboxide states almost disappeared as the ALD cycles progressed. Consequently, the Ta5+ state, which corresponds with the stoichiometric Ta2O5, only appeared after 4.0 cycles. Additionally, tantalum silicate was not detected at the interfacial states between Ta2O5 and Si. The measured valence band offset value between Ta2O5 and the Si substrate was 3.08 eV after 2.5 cycles.

• Korean Journal of Materials Research
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• v.8 no.4
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• pp.345-353
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• 1998

Metal organic chemical vapor deposition (MOCVD) of copper using three Cu( I ) precursors. (hfac)Cu (VTMS) (hfac= hexafluoroacetylacetonate, VTMS= vinyltrimethylsilane), (hfac)Cu(VTMOS) (VTMOS= vinyltri¬methoxysilane) and (hfac)Cu(A TMS) (A TMS= allyltrimethylsilane) was studied. The thermal stability and the gase¬ous phase reaction mechanism of Cu( I ) precursors were identified using $^1H$-, $^I3C$-NMR and Fourier transform infra¬red spectroscopy. It was found out that thermal stability of liquid phase (hfac)Cu(VTMS) and (hfac)Cu(VTMOS) were better than that of (hfac)Cu(A TMS) using FT - NMR. From in-situ FT - IR experiments, the disproportion reaction of Cu(hfac). the decomposition reaction of Cu(hfac), and cracking of free hfac ligand were observed. Also the effect of gaseous phase reaction on the deposition rates and film properties was investigated. The minimum temperature that deposition of copper films from (hfac)Cu(A TMS) was as low as 60$^{\circ}$C and such a low deposition temperature compared with those of other Cu( I ) precursors is believed to be related with weaken Cu- A TMS bond.

• Transactions on Electrical and Electronic Materials
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• v.13 no.2
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• pp.93-97
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• 2012

In this study, the fabrication and the characteristic analyses of OLED using in-situ passivation are investigated. OLEDs represent a disadvantage in decreasing its life due to the degradation caused by the penetration of moisture and oxygen. After the fabrication of OLED, an in-situ passivation method for inorganic thin films is developed. A process that uses PECVD method which can apply a vapor deposition process at room temperature is also developed. Changes in the degradation and electric characteristics of OLEDs are also analyzed by applying $SiO_2$ and SiNx thin films to OLED as a passivation layer. By applying the fabricated thin film to OLEDs as a passivation layer, the moisture penetration in a single layer film is ensured below $1{\times}10^{-2}\;g/m^2.day$. This leads to the improvement of such degradation characteristics in the application of multilayer films.

• Geomechanics and Engineering
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• v.19 no.2
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• pp.141-151
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• 2019

A novel theoretical solution is presented for created (zero initial radius) cavity expansion problem based on CamClay model and considers the effect of initial anisotropic in-situ stress and drained conditions. Here the strain of this theoretical solution is small deformation in elastic region and large deformation in plastic region. The works for cylindrical and spherical cavities expanding in drained condition from zero initial radius are investigated. Most of the conventional solutions were based on the isotropic and undrained condition, however, the initial stress state of natural soil mass is anisotropy by soil deposition history, and drained cavity expansion calculation is closer to actual engineering in permeable soil mass. Finally, the parametric study is presented in order to the engineering significance of this work.