Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Thin Film Passivation Characteristics in OLED Using In-situ Passivation

  • Kim, Kwan-Do (Department of Nano Engineering, Dong-A University, Korea and School of Advanced Materials and System Engineering, Green Energy System Education Center, Kumoh National Institute of Technology) ;
  • Shin, Hoon-Kyu (National Center for Nanomaterials Technology, Pohang University of Science and Technology) ;
  • Chang, Sang-Mok (Department of Nano Engineering, Dong-A University, Korea and Department of Chemical Engineering, Dong-A University)
  • Received : 2011.12.28
  • Accepted : 2012.02.20
  • Published : 2012.04.25
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Abstract

In this study, the fabrication and the characteristic analyses of OLED using in-situ passivation are investigated. OLEDs represent a disadvantage in decreasing its life due to the degradation caused by the penetration of moisture and oxygen. After the fabrication of OLED, an in-situ passivation method for inorganic thin films is developed. A process that uses PECVD method which can apply a vapor deposition process at room temperature is also developed. Changes in the degradation and electric characteristics of OLEDs are also analyzed by applying $SiO_2$ and SiNx thin films to OLED as a passivation layer. By applying the fabricated thin film to OLEDs as a passivation layer, the moisture penetration in a single layer film is ensured below $1{\times}10^{-2}\;g/m^2.day$. This leads to the improvement of such degradation characteristics in the application of multilayer films.

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