• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.2
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• pp.95-100
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• 2000

For the well-controlled growing in-situ heavily phosphorus doped polycrystalline Si films directly on Si wafer by reduced pressure chemical vapor deposition, a study is made of the two step growth. When in-situ heavily phosphorus doped Si films were deposited directly on Si (100) wafer, crystal structure in the film is not unique, that is, the single crystal to polycrystalline phase transition occurs at a certain thickness. However, the well-controlled polycrtstalline Si films deposited by two step growth grew directly on Si wafers. Moreover, the two step growth, which employs crystallization of grew directly on Si wafers. Moreover, the two step growth which employs crystallization of amorphous silicon layer grown at low temperature, reveals crucial advantages in manipulating polycrystal structures of in-situ phosphorous doped silicon.

• 한국신재생에너지학회:학술대회논문집
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• 2008.05a
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• pp.434-435
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• 2008

An in-situ monitoring technique for deposition process of CdS buffer layer was developed in this work. A quartz crystal microbalance (QCM) was used to measure the frequency change during the CdS deposition process and the relation ship between frequency change and film thickness and optical transmittance was investigated. The film thickness shows a linear relationship with frequency change, demonstrating that frequency change measured by QCM can be used a in-situ monitoring tool for CdS deposition process.

• Korean Journal of Metals and Materials
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• v.46 no.5
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• pp.283-288
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• 2008

We observed the in-situ stress behavior of Cu and Ag thin films during deposition using a thermal evaporation method. Multi-beam curvature measurement system was used to monitor the evolution of in-situ stress in Cu and Ag thin films on 100 Si(100) substrates. The measured curvature was converted to film stress using Stoney formula. To investigate the effects of the deposition rates on the stress evolution in Cu and Ag thin films, Cu and Ag films were deposited at rates ranging from 0.1 to $3.0{\AA}/s$ for Cu and from 0.5 to $4.0{\AA}/s$ for Ag. Both Cu and Ag films showed a unique three stress stages, such as 'initial compressive', 'a tensile maximum' and followed by 'incremental compressive' stress. For both Cu and Ag films, there is no remarkable effect of deposition rate on the thickness and average stress at the tensile maximum. There is, however, a definite decrease in the incremental compressive stress with increasing deposition rate.

• Carbon letters
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• v.21
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• pp.16-22
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• 2017

Cobalt was electrodeposited onto chemical vapor deposition (CVD) graphene/Si/$SiO_2$ substrates, during different time intervals, using an electrolyte solution containing a low concentration of cobalt sulfate. The intention was to investigate the details of the deposition process (and the dissolution process) and the resulting magnetic properties of the Co deposits on graphene. During and after electrodeposition, in-situ magnetic measurements were performed using an (AGFM). These were followed by ex situ morphological analysis of the samples with ${\Delta}t_{DEP}$ 30 and 100 s by atomic force microscopy in the non-contact mode on pristine CVD graphene/$SiO_2$/Si. We demonstrate that it is possible to electrodeposit Co onto graphene, and that in-situ magnetic measurements can also help in understanding details of the deposition process itself. The results show that the Co deposits are ferromagnetic with decreasing coercivity ($H_C$) and demonstrate increasing magnetization on saturation ($M_{SAT}$) and electric signal proportional to remanence ($M_r$), as a function of the amount of the electrodeposited Co. It was also found that, after the end of the dissolution process, a certain amount of cobalt remains on the graphene in oxide form (this was confirmed by X-ray photoelectron spectroscopy), as suggested by the magnetic measurements. This oxide tends to exhibit a limited asymptotic amount when cycling through the deposition/dissolution process for increasing deposition times, possibly indicating that the oxidation process is similar to the graphene surface chemistry.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.3
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• pp.208-212
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• 2008

This paper reports physical properties of in situ boron doped silicon films made from boron source gas and silane ($SiH_4$) gas in a conventional low-pressure chemical vapor deposition vertical furnace. If the p-type polysilicon is formed by boron implantation into undoped polysilicon, the plasma nitridation (PN) process is added on the oxide in order to suppress boron penetration that can be caused during the thermal treatments used in fabrication. In-situ boron doped polysilicon deposition can complete p-type polysilicon film with only one deposition process and need not the PN process, because there is not interdiffusion of dopant at the intermediate temperatures of the subsequent steps. Since in-situ boron doped polysilicon films have higher work function than that of n-type polysilicon and they are compatible with the underlying oxide, they may be promising materials for improving memory cell characteristics if we make its profit of these physical properties.

• Journal of the Korean Vacuum Society
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• v.20 no.2
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• pp.86-92
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• 2011

The diagnosis studies of the process of chemical vapor deposition were carried out by using in-situ particle monitor (ISPM) and self-plasma optical emission spectroscopy (SPOES). We used the two kinds of equipments such as the silicon plasma enhanced chemical vapor deposition system with silane gas and the borophosphosilicate glass depositon system for monitoring. Using two sensors, we tried to verify the diagnostic and in-situ sensing ability of by-product gases and contaminant particles at the deposition and cleaning steps. The processes were controlled as a function of precess temperature, operating pressure, plasma power, etc. and two sensors were installed at the exhaust line and contiguous with each other. the correlation of data (by-product species and particles) measured by sensors were also investigated.

• Journal of Surface Science and Engineering
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• v.32 no.3
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• pp.297-302
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• 1999

In situ measurement of infrared absorption spectra has been performed during low-temperature plasma-enhanced chemical vapor depositiion of silicon-oxide films using tetramethoxysilane as a silicon source. Several absorption bands due to the reactant molecules are clearly observed before deposition. In the plasma, these bands completely disappear at any oxygen mixing ratio. This result shows that most of the tetramethoxysilane molecules are dissociated in the rf plasma, even C-H bonds. Existence of Si-H bonds in vapor phase and/or on the film surface during deposition has been found by infrared diagnostics. We observed both a decrease in Si-OH absorption and an increase in Si-O-Si after plasma off, which means the dehydration condensation reaction continues after deposition. The rate of this reaction is much slower than the deposition ratio of the films.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1483-1484
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• 2000

Dielectric thin films of PLT(Pb(La.Ti)O3) for the application of highly integrated memory devices have been deposited on Pt/Ti/SiO2/Si substrates in situ by pulsed laser deposition(PLD). We have systematically investigated the variation of grain sizes depending on the condition of post-annealing and the variation of deposition rate. Both in-situ annealing and ex-situ annealing have been compared depending on the annealing time. C-V measurement, ferroelectric properties, leakage current and SEM were performed to investigate the electrical properties and the microstructural properties of Pb(La,Ti)$O_3$ films.

• Korean Journal of Metals and Materials
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• v.47 no.8
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• pp.466-473
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• 2009

Our group previously observed the intrinsic stress evolution of Cu thin films during deposition by changing the deposition rate. Intrinsic stress of Cu thin films, which show Volmer-Weber growth, is reported to display three unique stress stages, initial compressive, broad tensile, and incremental compressive stress. The mechanisms of the initial compressive stress and incremental compressive stages remain subjects of debate, despite intensive research inquiries. The tensile stress stage may be related to volume contraction through grain growth and coalescence to reduce over-accumulate Cu adatoms on the film surface. The in-situ intrinsic stresses behavior in Cu thin films was investigated in the present study using a multi-beam curvature measurement system attached to a thermal evaporation device. The effect of substrate surface roughness was monitored by observed the in-situ intrinsic stress behavior in Cu thin films during deposition, using $100{\mu}m$ thick Si(111) wafer substrates with three different levels of surface roughness.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.12
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• pp.1032-1038
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• 2000

Ni$_{81}$$Fe_{19}$(200 nm) thin films have been deposited by RF-magnetron sputtering on Si(001) substrates, Atomic force microscopy(AFM), X-ray diffraction(XRD) and magnetoresistance(MR) measurements of the thin films for investigating electromagnetic properties and microstructures were employed. During field annelaing for 1hr, there was no big difference n XRD patterns of Ni$_{81}$$Fe_{19}$ thin films. However, there was a significant change in XRD patterns of Ni$_{81}$$Fe_{19}$ thin films deposited at 40$0^{\circ}C$ during in-situ magnetic field deposition. The degree of surface roughness increased with increasing annealing and deposition temperature. With variation of surface roughness, there was no significant difference in MR Characteristics of Ni$_{18}$ $Fe_{19}$ thin films in 1hr-annealed case. High MR ratio was observed in the case of in-situ field deposited Ni$_{81}$$Fe_{19}$ films. 19/ films.