• Title/Summary/Keyword: in-circuit test

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A Hardware-Software Co-verification Methodology for cdma2000 1x Compliant Mobile Station Modem (cdma2000 1x 이동국 모뎀을 위한 하드웨어-소프트웨어 동시 검증 방법)

  • Han, Tae-Hee;Han, Sung-Chul;Han, Dong-Ku;Kim, Sung-Ryong;Han, Geum-Goo;Hwang, Suk-Min;Kim, Kyung-Ho
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.39 no.7
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    • pp.46-56
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    • 2002
  • In this paper, we describe a hardware-software co-verification methodology and environment in developing a mobile station modem chip for cdma2000 1x which is one of the 3rd generation mobile communication standards. By constructing an efficient co-verification environment for a register-transfer-level hardware model and a physical-layer software model combining a channel link simulator and a versatile test-bench, we can drastically reduce both time and cost for developing a complex three-million-gate class system integrated circuit.

Transmission Line Parameter Extraction and Signal Integrity Verification of VLSI Interconnects Under Silicon Substrate Effect (실리콘 기판 효과를 고려한 VLSI 인터컨넥트의 전송선 파라미터 추출 및 시그널 인테그러티 검증)

  • 유한종;어영선
    • Journal of the Korean Institute of Telematics and Electronics C
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    • v.36C no.3
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    • pp.26-34
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    • 1999
  • A new silicon-based IC interconnect transmission line parameter extraction methodology is presented and experimentally examined. Unlike the PCB or MCM interconnects, a dominant energy propagation mode in the silicon-based IC interconnects is not quasi-TEM but slow wave mode(SWM). The transmission line parameters are extracted taking the silicon substrate effect (i.e., slow wave mode) into account. The capacitances are calculated considering silicon substrate surface as a ground. Whereas the inductances are calculated by using an effective dielectric constant. In order to verify the proposed method, test patterns were designed. Experimental data have agreement within 10%. Further, crosstalk noise simulation shows excellent agreements with the measurements which are performed with high-speed time domain measurement ( i.e., TDR/TDT measurements) for test pattern, while RC model or RLC model without silicon substrate effect show about 20~25% underestimation error.

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Pattern Mapping Method for Low Power BIST (저전력 BIST를 위한 패턴 사상(寫像) 기법에 관한 연구)

  • Kim, You-Bean;Jang, Jae-Won;Son, Hyun-Uk;Kang, Sung-Ho
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.46 no.5
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    • pp.15-24
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    • 2009
  • This paper proposes an effective low power BIST architecture using the pattern mapping method for 100% fault coverage and the transition freezing method for making high correlative low power patterns. When frozen patterns are applied to a circuit, it begins to find a great number of faults at first. However, patterns have limitations of achieving 100% fault coverage due to random pattern resistant faults. In this paper, those faults are covered by the pattern mapping method using the patterns generated by an ATPG and the useless patterns among frozen patterns. Throughout the scheme, we have reduced an amount of applied patterns and test time compared with the transition freezing method, which leads to low power dissipation.

Frequency Characteristics for Micro-scale SMD RE Chip Inductors of Solenoid-Type (Solenoid 형태의 초소형 SMD RF 칩 인덕터에 대한 주파수 특성)

  • Kim, Jae-Wook
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.8 no.3
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    • pp.454-459
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    • 2007
  • In this work, micro-scale, high-performance solenoid-type RF chip inductors utilizing amorphous $Al_2O_3$ core material were investigated. The size of the chip inductors was $0.86{\times}0.46{\times}0.45mm^3$ and copper(Cu) wire with $27{\mu}m$ diameter was used as the coil. High frequency characteristics of the inductance(L), quality factor(Q), impedance(Z), and equivalent circuit parameters of the RE chip inductors were measured and analyzed using an RF impedance/material analyzer(HP4291B with HP16193A test fixture). It was observed that the RF chip inductors with the number of turns of 9 to 12 have the inductance of 21 to 34nH and exhibit the self-resonant frequency(SRF) of 5.7 to 3.7GHz. The SRF of inductors decreases with increasing the inductance and inductors have the quality factor of 38 to 49 in the frequency range of 900MHz to 1,7GHz.

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Electrical and Mechanical Noise Study of the 765kV Transmission Line (765kV 송전선로의 전기적 및 기계적 소음고찰)

  • Lee,
    • Journal of KSNVE
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    • v.6 no.1
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    • pp.89-95
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    • 1996
  • If the transmission line voltage is greater than 500kV, audible noise (AN) and hum noise (HN) due to corona discharges on the conductor would be an important design factor for the conductor selection of transmission line. Also there is an aeolian noise: wind noise(WN) from the tower and the conductor due to wind. This paper presents the results of a statistical analysis of audible noise, hum noise, aeolian noise of 6-480mm$^{2}$ conductor bundle in KEPRI 765kV Test Transmission Line which was constructed to develop 765kV double circuit AC transmission line for the first time in the world. The result of the analysis shows that 6-480mm$^{2}$ conductor bundle and tower satisfy configuration the audible noise design criterion of 50dB(A).

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Experimental investigation on the degradation of SiGe LNAs under different bias conditions induced by 3 MeV proton irradiation

  • Li, Zhuoqi;Liu, Shuhuan;Ren, Xiaotang;Adekoya, Mathew Adefusika;Zhang, Jun;Liu, Shuangying
    • Nuclear Engineering and Technology
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    • v.54 no.2
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    • pp.661-665
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    • 2022
  • The 3 MeV proton irradiation effects on SiGe low noise amplifier (LNA) (NXP BGU7005) performance under different voltage supply VCC (0 V, 2.5 V) conditions were firstly experimental studied in this present work. The S parameters including S11, S22, S21, 1 dB compression point and noise figure (NF) of the test samples under different bias voltage supply were measured and compared before and after 3 MeV proton irradiation. The total proton irradiation fluence was 1 × 1015 protons/cm2. The maximum degradation quantities of the gain S21 and NF of the test samples under zero bias are measured respectively 1.6 dB and 1.2 dB. Compared with the samples under 2.5 V bias supply, the maximum degradation of S21 and NF are respectively 1.1 dB and 0.8 dB in the whole frequency band. It is noteworthy that the gain and NF of SiGe LNAs under zero-bias mode suffer enhanced degradation compared with those under normal bias supply. The key influence factors are discussed based on the correlation of the SiGe device and the LNA circuit. Different process of the ionization damage and displacement damage under zero-bias and 2.5 V bias voltage supply contributed to the degradation difference. The underlying physical mechanisms are analyzed and investigated.

Effects of Temperature/Humidity Treatment Conditions on the Peel Strength between Screen-printed Ag and Polyimide Films (고온/고습 조건이 스크린 프린팅 Ag와 Polyimide의 필 강도에 미치는 영향)

  • Lee, Hyeonchul;Bae, Byeong-Hyun;Son, Kirak;Kim, Gahui;Park, Young-Bae
    • Journal of the Microelectronics and Packaging Society
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    • v.29 no.2
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    • pp.43-48
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    • 2022
  • Effect of temperature/humidity (T/H) treatment conditions on the peel strength of screen-printed Ag/polyimide (PI) structures was evaluated by peeling PI films in 90° peel test. Initial peel strength was 25.99±1.47 gf/mm, and then decreased to 6.05±0.54 gf/mm after 500 h at 85℃/85% relative humidity T/H condition. And, the peeled locus was changed from Ag/PI interface to shallow cohesive inside PI near interface. X-ray photoelectron spectroscopy analysis on the peeled surfaces showed that the long-term moisture penetration into the Ag/PI interface during T/H treatment led to hydrolytic degradation of PI to form weak boundary layer inside PI near Ag/PI interface, which are responsible for large decrease in peel strength.

A Signal Processing Software Technique for the Tolerance of the 4 Axis Strain-gauge Sensors applied to the Military Weapon System (군 무기체계에 적용되는 4 축 스트레인-게이지의 오차에 대한 신호처리 소프트웨어 기법)

  • Young-Jun Lee;Chong-Ho Yi
    • The Journal of the Korea institute of electronic communication sciences
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    • v.18 no.1
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    • pp.185-194
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    • 2023
  • The 4-axis strain-gauge, which is widely applied to military weapon systems, is operated in poor temperature and vibration conditions, tolerance may increase and malfunctions may occur. To improve this, this paper proposes a signal-processing software technique for the tolerance of the 4-axis strain gauge applied to a military weapon system. First, the tolerance of the strain-gauge and the signal processing circuit according to the ambient temperature were evaluated and analyzed. Second, a software technique for processing the dead zone and offset area that can improve the tolerance of the strain-gauge is proposed. The experimental results applying the software technique confirmed that it operated normally in the temperature test and operation test. Therefore, the proposed software technique is valid and can be used as useful information to improve tolerance due to ambient temperature and vibration when designing a system using a strain-gauge.

A Study on Safety and Performance Evaluation of Smart All-in-one Cardiopulmonary Assist Device (스마트올인원 심폐순환보조장치의 안전성 및 성능평가에 관한 연구)

  • Park, Junhyun;Ho, YeJi;Lee, Yerim;Lee, Duck Hee;Choi, Jaesoon
    • Journal of Biomedical Engineering Research
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    • v.40 no.5
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    • pp.197-205
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    • 2019
  • The existing Extracorporeal membrane oxygenation(ECMO) and Cardiopulmonary bypass system(CPB) have been developed and applied to various devices according to their respective indications. However, due to the complicated configuration and difficult usage method, it causes inconvenience to users and there is a risk of an accident. Therefore, smart all-in-one cardiopulmonary circulation device is being developed recently. The smart all-in-one cardiopulmonary assist device consists of a blood pump for cardiopulmonary bypass, a blood oxidizer for cardiopulmonary bypass, a blood circuit for cardiopulmonary bypass, and an artificial cardiopulmonary device. It is an integrated cardiopulmonary bypass device that can be used for a variety of purposes such as emergency, intraoperative, post-operative intensive care, and long-term cardiopulmonary assist, combined with CPB used in open heart surgery and ECMO used when patient's cardiopulmonary function does not work normally. The smart all-in-one cardiopulmonary assist device does not exist as a standard and international standard applicable to advanced medical devices. Therefore, in this study, we will refer to the International Standard for Blood Components, the International Standard for Blood, the Guideline for Blood Products, and prepare applicable performance and safety guidelines to help quality control of medical devices, and contribute to the improvement of the health of people. The guideline, which is the result of conducted a survey of the method of safety and performance test, is based on the principle of all-in-one cardiopulmonary aiding device, related domestic foreign standards, the status of domestic and foreign patents, related literature, blood pump(ISO 18242), blood oxygenator (ISO 7199), and blood circuit (ISO 15676) for cardiopulmonary bypass.The items on blood safety are as follows: American Society for Testing and Materials ASTM F1841-97R17), and in the 2010 Food and Drug Administration's Safety Assessment Guidelines for Medical Assisted Circulatory Devices. In addition, after reviewing the guidelines drawn up through expert consultation bodies including manufacturers / importers, testing inspectors, academia, etc. the final guideline was established through revision and supplementation process. Therefore, we propose guidelines for evaluating the safety and performance of smart all-in-one cardiopulmonary assist devices in line with growing technology.

Reliability Evaluation of the WSW Device for Hot-carrier Immunity (핫-캐리어 내성을 갖는 WSW 소자의 신뢰성 평가)

  • 김현호;장인갑
    • Journal of the Korea Society of Computer and Information
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    • v.9 no.1
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    • pp.9-15
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    • 2004
  • New WSW(Wrap Side Wall) is proposed to decrease junction electric field in this paper. WSW process is fabricated after first gate etch, followed NM1 ion implantation and deposition & etch nitride layer. New WSW structure has buffer layer to decrease electric field. Also we compared the hot carrier characteristics of WSW and conventional. Also, we design a test pattern including pulse generator, level shifter and frequency divider, so that we can evaluate AC hot carrier degradation on-chip. It came to light that the universality of the hot carrier degradation between DC and AC stress condition exists, which indicates that the device degradation comes from the same physical mechanism for both AC and DC stress. From this universality, AC lifetime under circuit operation condition can be estimated from DC hot carrier degradation characteristics.

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