• Electrical & Electronic Materials
• /
• v.8 no.3
• /
• pp.261-266
• /
• 1995

In this study, PZT solutions added impurities of Yttrium acetate were prepared by sol-gel processing and were deposited on Pt/ $SiO_{2}$/Si substrates at 5000 rpm for 20 sec. using spin-coating method. Coated films were annealed at 700-750.deg. C for 30 min. using conventional furnace method. Variations of the crystallographic structure and microstructure of PZT thin films with adding impurities were observed using XRD and SEM, and the electrical properties, such as relative permittivity, tan .delta., hysteresis curves and leakage currents, were measured. As the yttrium contents were increased, the remanent polarization and coercive field were decreased. Variations of remanent polarizations and coercive fields of pure and yttrium doped specimens according to polarization reversal cycles were observed using hysteresis measurement. PZT thin films added $Y^{3+}$ ions were completely crystallized at 750.deg. C. $Y^{3+}$ ions, as donor impurity, substituted Pb.sup 2+/ ions located at A-site of perovskite structure. By substitution of $Y^{3+}$ ions, leakage currents became less by decreasing the space charges. Degradation of remanent polarizations of Yttrium added specimens after fatigue was not observed and coercive fields increased more than those of pure PZT thin films.

• Journal of Korea Foundry Society
• /
• v.18 no.4
• /
• pp.357-363
• /
• 1998

Microstructure of A356 aluminium alloys cast in a permanent mold was investigated by optical microscope and image analyzer, with particular respect to the shape and size distribution of iron intermetallics known as ${\beta}-phase$ ($Al_5FeSi$). Morphologies of the ${\beta}-phase$ was found to change gradually with the Be:Fe ratio like these. In Be-free alloys, ${\beta}-phase$ with needlelike morphology was well developed, but script phase was appeared when the Be:Fe ratio is above 0.2:1. With the Be:Fe ratios of 0.4:1-1:1, script phase as well as Be-rich phase was also observed. In case of higher Be addition, above 1:1, Be-rich phase was observed on all regions of the specimens, and increasing of the Be:Fe ratios gradually make the Be-rich phase coarse. It was also observed that the ${\beta}-phase$ with needlelike morphology was coarsened with increase of the Fe content in Be-free alloys. However, in Be-added alloys, length and number of these ${\beta}-phases$ were considerably decreased with the increased Be:Fe ratio. It was concluded that Fe impurity element to be crystallized into needlelike intermetallics was tied up by Be addition element, and new phases were crystallized into script or Be-rich intermetallics.

• Korean Journal of Materials Research
• /
• v.27 no.10
• /
• pp.544-551
• /
• 2017

In order to develop a new commercial Al-12%Si casting alloy with improved physical properties, we investigated the effect of adding Sr and TiB to the alloy. Al-12%Si alloys were prepared by die casting at $660^{\circ}C$. The eutectic temperature of the Sr-modified Al-12%Si alloy decreased to $9^{\circ}C$ and the mushy zone region increased. The shape of the Si phase changed from coarse acicula to fine fiber with the addition of Sr. The addition of TiB in the Al-12%Si alloy reduced the size of the primary ${\alpha}$-Al and eutectic Si phases. When Sr and TiB were added together, it worked more effectively in refinement and modification. The density of twins in the Si phase-doped Sr increased and the width of the twins was refined to 5 nm. These results are related to the impurity induced twinning(IIT) growth.

• Journal of Powder Materials
• /
• v.19 no.3
• /
• pp.220-225
• /
• 2012

YAG:Ce yellow phosphor particles were synthesized by spray pyrolysis with changing the solution properties and their luminous properties, crystal structure, and morphological changes were studied by using PL measurement, XRD, and SEM analysis. It was clear that the solution properties significantly affected the crystal phase, crystallite size, the PL intensity, and the morphology of YAG:Ce particles. At low calcination temperature, the addition of urea only to the spray solution was helpful to form a pure YAG phase without any impurity phases, as the result, the highest luminescence intensity was achieved at the calcination temperature of $900^{\circ}C$. When the calcination temperatures were larger than $1300^{\circ}C$, however, the YAG particles prepared without any additive showed the highest luminescent intensity. Regardless of the solution conditions, the emission intensity of YAG:Ce particles prepared by spray pyrolysis showed a linear relation with the crystallite size. In terms of the morphology of YAG:Ce particles, the addition of both DCCA and $NH_4OH$ to the spray solution was effective to prepare a spherical and dense structured YAG particles.

• Journal of Powder Materials
• /
• v.28 no.1
• /
• pp.25-30
• /
• 2021

The surface of silicon dummy wafers is contaminated with metallic impurities owing to the reaction with and adhesion of chemicals during the oxidation process. These metallic impurities negatively affect the device performance, reliability, and yield. To solve this problem, a wafer-cleaning process that removes metallic impurities is essential. RCA (Radio Corporation of America) cleaning is commonly used, but there are problems such as increased surface roughness and formation of metal hydroxides. Herein, we attempt to use a chelating agent (EDTA) to reduce the surface roughness, improve the stability of cleaning solutions, and prevent the re-adsorption of impurities. The bonding between the cleaning solution and metal powder is analyzed by referring to the Pourbaix diagram. The changes in the ionic conductivity, H2O2 decomposition behavior, and degree of dissolution are checked with a conductivity meter, and the changes in the absorbance and particle size before and after the reaction are confirmed by ultraviolet-visible spectroscopy (UV-vis) and dynamic light scattering (DLS) analyses. Thus, the addition of a chelating agent prevents the decomposition of H2O2 and improves the life of the silicon wafer cleaning solution, allowing it to react smoothly with metallic impurities.

• Journal of the Korean Ceramic Society
• /
• v.26 no.5
• /
• pp.705-711
• /
• 1989

The glass-ceramics was prepared with the scoria(CaO-MgO-Al2O3-SiO2 system) of the locally occurring volcanic ejecta containing 10-13w/o of (FeO＋Fe2O3) by melting at 140$0^{\circ}C$ for 4 hours and thermally treated for nucleation and crystallization. The sucrose was added to the scoria to adjust the Fe2+/Fe3+ ratio during the melting process. The addition of 1-2w/o of sucrose showed the glass-ceramics body with the finest particle developed and dispersed over the entire range. It is concluded that the impurity content of iron oxide and titanium oxide play the most-influencial effect on the crystallization. When 1-2w/o of sucrose was added to the scoria, the value of Fe2+/Fe3+ ratio was 0.93-1.32 and showed the best result of crystallization. The nucleation temperature and time were calculated by the measurements of exothermic peak temperatures of DTA for quenched and thermally treated glasses. The nucleation temperature of scoria glass without the addition of sucrose was estimated as 75$0^{\circ}C$, but the addition of sucrose by 2w/o showed the nucleation temperature 6$25^{\circ}C$. The nucleation time was calculated with the same DTA curves. The nucleation times estimated were about 150min. for both of glasses without and with sucrose added. Finally, the activation energies for crystallization were calculated with the DTA data. The calculated activation energies were 143 Kcal/mole for the glass without addition of sucrose and 90Kcal/mole, 87Kcal/mole, 85Kcal/mole and 71Kcal/mole for the glasses of 1w/o, 2w/o, 3w/o and 4w/o addition respectively.

• Journal of Korea Foundry Society
• /
• v.18 no.4
• /
• pp.349-356
• /
• 1998

In this study, the influence of impurity element Ca, P on solidification behavior and morphology of eutectic silicon was examined by observation of microstructure and by DSC analysis. In the case of 1.3 ppm P, eutectic Si was fine and fibrous when the added amount of Ca was 500 ppm, However, the modification of eutectic Si was depressed by formation of polygonal Ca-Si compounds when the addition amount of Ca was greater than 1000 ppm. The addition of Ca 500 ppm depressed the primary and eutectic temperature. The primary and eutectic temperature were depressed with Ca 500 ppm but rather ascended when the addition amount of Ca was more than 1000 ppm. When the content of P was 17.5 ppm, eutectic Si had modified morphology with Ca addition. DAS was increased, the primary temperature was ascended and eutectic temperature was depressed with Ca added. Eutectic Si appeared as coarse flake phase and DAS was decreased with the increase of P content. The existence of P in the melt depressed the primary temperature and ascended eutectic temperature.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.48 no.4
• /
• pp.221-225
• /
• 1999

This paper shows the parameters to affect the critical characteristic of YBaCuO superconducting bulk fabricated by MPMG (Melt Powdered Melt Growth)process. In order to investigate proper processing variables, the effect of the holding time at the melting temperature and that of the slow cooling time in $O_2\; ambient\; on\; the\; J_c$ were experimented. And then with the above obtained heat treatment conditions, the effects of addition of $Y_2BaCuO_5\; and\; Ag\; on\; the\; J_c$ were also investigated. A proper slow cooling time yields phase transformation from Tetragonal $(YBa_2Cu_3O_6)$ to Orthorhombic $(YBa_2Cu_3O_7)$ during an annealing time in $O_2$. Ag addition plays a role in increasing the $T_c\; and\; the J_c$, but the magnetization decreases. The $J_c$ and the magnetization increase with addition of Y211. $J_c$ of the sample added Ag 10wt% is superiorover 3000 G. Proper holding time, slow cooling time and amount of impurity addition are important parameters in fabricating the YBaCuO bulk by MPMG process with high $J_c$.

• Transactions on Electrical and Electronic Materials
• /
• v.15 no.4
• /
• pp.226-229
• /
• 2014

In this study, lead-free $(Ba_{0.85}Ca_{0.15})(Ti_{1-x}Zr_x)O_3$ ceramics and a bimorph-type piezoelectric actuator were fabricated using the normal oxide-mixed sintering method, and their dielectric properties, microstructure, and displacement properties were investigated. From the results of X-ray diffraction, the pattern of the specimen has a pure perovskite structure. In addition, no secondary impurity phases were found. The excellent piezoelectric coefficient of $d_{33}=454pC/N$, the electromechanical coupling factor $k_p=0.51$, the dielectric constant ${\varepsilon}_r=3,657$, the mechanical quality factor $Q_m=239$, and $T_c$(Tetragonal-Cubic) =$90^{\circ}C$ were shown at x= 0.085. ${\Delta}k_p/k_p20^{\circ}C$ and ${\Delta}f_r/f_r20^{\circ}C$ showed the maximum value of -0.255 and 0.111 at $-20^{\circ}C$ and $80^{\circ}C$, respectively. The maximum total-displacement was $60{\mu}m$ under the input voltage of 50 V. As a result, it is considered that lead-free $(Ba_{0.85}Ca_{0.15})(Ti_{1-x}Zr_x)O_3$ ceramics is a promising candidate for piezoelectric actuator application for x= 0.085.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.7
• /
• pp.603-609
• /
• 2008

Photoluminescence (PL) of neutron-irradiated GaN films and nanowires is investigated in this study. The GaN films and nanowires were irradiated by neutron beams in air at room temperature, and the neutron-irradiated films and nanowires were annealed in an atmosphere of $NH_3$ at temperatures ranging from 500 to $1100^{\circ}C$. The line-shapes of the PL spectra taken from the neutron-irradiated GaN films and nanowires were changed differently with increasing annealing temperature. In this study, light-emitting centers created in the neutron-irradiated GaN films and nanowires are examined and their origins are discussed. In addition, it is suggested here that the neutron-transmutation-doping is a simple and useful means of homogeneous impurity doping into nanowires with control of the doping concentration.