• 제목/요약/키워드: immunity improvement

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How can we feel the compassion effect like the Mother Teresa effect?

  • Kyung Ja Ko;Hyun-Yong Cho
    • 셀메드
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    • 제13권10호
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    • pp.12.1-12.4
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    • 2023
  • The purpose of this study is to suggest that compassion is used as a mechanism to improve immunity by activating people's parasympathetic nerves. Compassion is pity and heartbreak for the misfortune of others. The instinctive emotion of compassion is the basis for humans to achieve and develop society. This is also linked to the laws of nature and the factors of evolution that Kropotkin, famous for his "mutual assistance (mutualism)" that all things help each other. Compassion is an individual's instinctive emotion and at the same time a driving force for forming and developing society. If the Hopeful World (希望世上) performs Korean traditional music healing at a nursing home, first, it will have a positive healing effect on the elderly in the nursing home, who are the audience. Second, positive healing effects can also be expected from performers. The stronger the compassion, the greater the healing effect. Third, people who watch the performance also enjoy the healing effect. This seems to have brought about a synergistic effect by combining the feelings felt while looking at the excellent behavior felt by seeing the poor person. It seems that this effect can be named the compassion effect that developed the Mother Teresa effect. The Mother Teresa effect refers to a significant improvement in the body's immune function just by volunteering or seeing good things. By expanding this Mother Teresa effect, it can be inferred that a pitying heart, helping behavior, and being with good behavior will all help improve the human immune system. This can also be called the compassion effect. Therefore, we think having compassion activates the parasympathetic nerves, improving your mood, and increasing your immunity.

기능성식품(機能性食品) 의 현황(現況)과 음용효과(飮用效果) (The Present Situation and Therapeutic Effects of physiologically Functional Food)

  • 문지웅
    • 기술사
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    • 제36권6호
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    • pp.78-81
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    • 2003
  • Physiologically functional food is a type of the processed foods showing bioactivities in a living body. Physiologically functional food is a healthy food reinforcing biofunctional abilities of the precaution and recovering of the illness, immunity reinforcement. bio - rhythm control, aging repression and cancer precaution, etc. The consumers are taking to expect the improvement of national health and extention of life span. etc., Physiologically functional food must be able to be ingested briefly and taken in the surroundings easily and the reasonable price. To achieve this goals, it is necessary to positive support of the authorities concerned, technique development of an educational - Industrial cooperation. establishment of reasonable standard and right understanding of the consumers on physiologically functinal food.

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나카가미 페이딩 채널에서 합성변조 기법을 채용한 다중반송파 DS/CDMA 시스템 성능 분석 (Performance Analysis of Multicarrier DS/CDMA System Employing Combined Modulation techniques in a Nakagami Fading Channel)

  • 양원일;강희조
    • 한국정보통신학회논문지
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    • 제5권1호
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    • pp.52-60
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    • 2001
  • 본 논문에서는 나카가미 페이딩 환경에서 다중 반송파 MFSK-DPSK/DS-CDMA 합성 변조기법을 제안하였다. 또한, 다중경로 페이딩에 강한 특성과 주파수 이용 효율이 높은 다중반송파 DS-CDMA 합성변소 방식을 같이 사용하여 분석하였다. 그러한 변조방식은 비동기식 MFSK와 MFSK에 기반한 DPSK를 이용한 결합 주파수 위상 합성변조 방식이다. 결과로부터 전력효율과 대역폭 효율이 일반적인 통신 시스템보다 다중캐리어 합성 변조시스템이 효율을 개선시킬 수 있음을 알았다.

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평균전류모드제어 기법을 이용한 플라이백 컨버터의 모델링 및 안정도에 관한 연구 (A Study on the modeling and stability of Flyback converter using Average Current-mode Control)

  • 백수현;송상호;윤신용;김철진
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1999년도 하계학술대회 논문집 F
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    • pp.2682-2684
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    • 1999
  • This paper presents design and stability analysis of the constant frequency Flyback type converter using average current-mode control. The average current-mode control has been recently reported, and superior characteristics over a peak current-mode control such as a good tracking performance of an average current, no slope compensation and noise immunity. By the improvement of PM(Phase Margin) obt from applying the compensator in the current loop, the stability of designed flyback convert more improved. The validity of designed convert confirmed by simulation and experimental result

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Application of the Vision Sensor for Weld Seam Tracking System in Large Vessel Fabrication

  • Park, Sang-Gu;Lee, Jee-Hyung;Ryu, Sang-Hyun
    • 제어로봇시스템학회:학술대회논문집
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    • 제어로봇시스템학회 2002년도 ICCAS
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    • pp.56.3-56
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    • 2002
  • For the weld quality improvement and the convenient operation of machines, laser vision system can be used to track weld seams on pressure vessels. There are many bad conditions to the weld grooves such as cutting error, gap variation of weld joint, and offset error of center line caused by misalignment. We developed a laser vision seam tracking system which consists of a laser vision sensor, a two axis positioning mechanism and a user interface program running on the Windows system. It was found that our system worked well for U, V and X shaped grooves. We used an industrial PC as the system controller to secure immunity to electrical noise and dust. We introduce here a simple and...

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정전기에 의한 CMOS DRAM 내부 회오의 파괴 Mechanism과 입력 보호 회로의 개선 (ESD damage mechanism of CMOS DRAM internal circuit and improvement of input protection circuit)

  • 이호재;오춘식
    • 전자공학회논문지A
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    • 제31A권12호
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    • pp.64-70
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    • 1994
  • In this paper, we inverstigated how a parricular internal inverter circuit, which is located far from the input protection in CMOS DRAM, can be easily damaged by external ESD stress, while the protection circuit remains intact. It is shown in a mega bit DRAM that the internal circuit can be safe from ESD by simply improving the input protection circuit. An inverter, which consists of a relatively small NMOSFET and a very large PMOSFET, is used to speed up DRAMs, and the small NMOSFET is vulnerable to ESD in case that the discharge current beyond the protection flows through the inverter to Vss or Vcc power lines on chip. This internal circuit damage can not be detected by only measuring input leakage currents, but by comparing the standby and on operating current before and after ESD stressing. It was esperimentally proven that the placement of parasitic bipolar transistor between input pad and power supply is very effective for ESD immunity.

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대전력용 EMC대책 필터의 성능개선에 관한 연구 (A Study or the Improvement of Performance for High power EMC filter)

  • 배대환;김동일;배재영
    • 한국전자파학회:학술대회논문집
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    • 한국전자파학회 2000년도 종합학술발표회 논문집 Vol.10 No.1
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    • pp.75-78
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    • 2000
  • Since the most of malfunctions in the industrial equipment controlled by processors is occured by the Electrical Fast Transient(EFT), the International Electrotechnical Commission(IEC) prepared the dummy signal to test the immunity level of the equipments. In this paper. we designed a new EMC filter for power line in break-box, which is consist of the feed-through capacitor and ferrite materials with high permeability which was wound or inserted in the second layer of the power cable in order to increase common mode inductance. We have obtained a excellent insertion loss characteristics over wide frequency band from 100 KHz up to 6 GHz. It is expected that the new EMC filter could be effectively used for industrial, MIL, and medical equipments to reduce a malfunctions and be suitable for IEC 61000-4-4.

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STI 기술을 채용한 CMOS well 구조에서의 Latch-up 특성 평가 (Investigations of Latch-up characteristics of CMOS well structure with STI technology)

  • 김인수;김창덕;김종철;김종관;성영권
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1997년도 추계학술대회 논문집 학회본부
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    • pp.339-341
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    • 1997
  • From this first studies, We have investigated the latch-up characteristics of various CMOS well structures possible with high energy ion implantation processes. In this study, we also investigated those of STI(Shallow Trench Isolation} structures with varing n+/p+ spacing and the depth of trench. STI structure is formed by T-SUPREM4 process simulator, and then latch-up simulations for each case were performed by MEDICI device simulator for latch-up immunity improvement. STI is very effective to preventing the degradation of latch-up characteristics as the n+/p+ spacing is reduced. These studies will allow us to evaluate each technology and suggest guidelines for the optimization of latch-up susceptibility.

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Immunity Improvement of Mo Silicidized a-Si FEA to Vacuum Environments

  • Shim, Byung-Chang;Lee, Jong-Duk;Park, Byung-Gook
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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    • pp.141-142
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    • 2000
  • In order to improve electron field emission and its stability, tip surface of amorphous silicon field emitters have been coated with molybdenum layer with a thickness of 25 nm through the gate opening and annealed rapidly in inert ambient. Compared with amorphous silicon field emitters, Mo silicidized amorphous silicon field emitters exhibited lower turn on voltage about 9 V, 3.8 times higher maximum current, 3.1 times lower fluctuation range and less change of the emission current depending on the vacuum level.

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재산화된 질화 산화막을 게이트 절연막으로 사용한 MOSFET의 특성 (The Characteristics of MOSFET with Reoxidized Nitrided Oxide Gate Dielectrics)

  • 양광선;박훈수;김봉렬
    • 전자공학회논문지A
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    • 제28A권9호
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    • pp.736-742
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    • 1991
  • N$^{+}$poly gate NMOSFETs and p$^{+}$ poly gate (surface type) PMOSFETs with three different gate oxides(SiO2, NO, and ONO) were fabricated. The rapid thermal nitridation and reoxidation techniques have been applied to gate oxide formation. The current drivability of the ONO NMOSFET shows larger values than that of the SiO2 NMOSFET. The snap-back occurs at a lower drain voltage for SiO$_2$ cases for ONO NMOSFET. Under the maximum substrate current bias conditions, hot-carrier effects inducting threshold voltage shift and transconductance degradation were investigated. The results indicate that ONO films exhibit less degradation in terms of threshold voltage shift. It was confirmed that the ONO samples achieve good improvement of hot-carrier immunity. In a SiO$_2$ SC-PMOSFET, with significant boron penetration, it becomes a depletion type (normally-on). But ONO films show excellent impurity barrier properties to boron penetration from the gate.

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