• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.7
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• pp.469-473
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• 2003

The effect of photoquenching on infrared image of the EL2 center in semi-insulating(S.I.) GaAs has been studied using near infrared transmission techniques. Particular interest is devoted to as-grown and annealed samples of undoped S.I. GaAs. It is found that the quenching mechanism is different in each sample and also the quenching rate is dependent on the materials and the quenching temperature which is somewhat inconsistent with other existing publications.

• Journal of electromagnetic engineering and science
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• v.10 no.4
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• pp.244-249
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• 2010

Recent development of magnetic resonance imaging (MRI) equipment enables interventional radiology (IVR) as diagnosis and treatment under MRI usage. In this paper, a new methodology for magnetic resonance (MR) scanner to apply not only diagnostic equipment but for treatment one is discussed. The temperature measuring procedure under MR is to measure phase shift of $T_1$, which is the longitudinal relaxation time of proton, for the position inside a sample material with the application of pulsed RF for heating inside the sample as artificial dielectrics. The result shows the possibility to apply MR as temperature measuring equipment and as a heating equipment for applying such as hyperthermia heating modality.

• Journal of the Korean Society for Nondestructive Testing
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• v.30 no.3
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• pp.257-260
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• 2010

Advancements in the imaging and computing technology have opened the path to digital holography for non-destructive investigations of technical samples, material property measurement, vibration analysis, flow visualization and stress analysis in aerospace industry which has widened the application of digital holography in the above fields. In this paper, we demonstrate the non-destructive investigation and micro-structure measurement application of digital holography to the small particles and a biological sample. This paper gives a brief description of the digital holograms recorded with this system and illustratively demonstrated.

• Journal of the Korean institute of surface engineering
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• v.47 no.6
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• pp.362-367
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• 2014

We report the design, fabrication of a $Si_3N_4$ probe and calculation of its mechanical properties for DPN(dip pen nanolithography), which consists of dual tips. Concept of dual tip probe is to employ individual tips on probe as either an AFM tip for imaging or a writing tip for nano patterning. For this, the dual tip probe is fabricated using low residual stress $Si_3N_4$ material with LPCVD deposition and MEMS fabrication process. On the basis of FEM analysis we show that the functionality of dual tip probe for imaging is dependent on the dimensions of dual tip probe, and high ratio of widths of beam areas is preferred to minimize curvature variation on probe.

• Journal of the Korean Society of Industry Convergence
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• v.26 no.5
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• pp.785-792
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• 2023

Because hyperspectral imaging provides detailed spectral information across a broad range of wavelengths, it can be utilized in numerous applications, including environmental monitoring, food quality inspection, medical diagnosis, material identification, art authentication, and crime scene analysis. However, hyperspectral images often contain various types of distortions due to the environmental conditions during image acquisition, which necessitates the proper removal of these distortions through a data preprocessing process. In this study, a preprocessing method was investigated to effectively correct the distortion caused by artificial light sources used in indoor hyperspectral imaging. For this purpose, a halogen-tungsten artificial light source was installed indoors, and hyperspectral images were acquired. The acquired images were then corrected for distortion using a preprocessing that does not require complex auxiliary equipment. After the corrections were made, the results were analyzed. According to the analysis, a statistical transformation technique using mean and standard deviation with reference to a reference signal was found to be the most effective in correcting distortions caused by artificial light sources.

• Korean Journal of Digital Imaging in Medicine
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• v.8 no.1
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• pp.51-55
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• 2006

The effects of Asaddition in amorphous selenium(a-Se) films for digital X-ray conversion material have been studied using the moving photocarrier grating(MPG) technique. This method utilizes the moving interference pattern generated by the superposition of the two frequency shifted laser beams for the illumination of the sample. This moving intensity grating induces a short circuit current, j$_{sc}$ in a-Se:As film. The transport parameters of the sample are extracted from the grating-velocity dependent short circuit current induced in the sample along the modulation direction. The electron and hole mobility, and recombination lifetime of a-Se films with arsenic(As) additions have been obtained. We have found an Increase in hole drift mobility and recombination lifetime, especially when 0.3% As is added into a-Se film, whereas electron mobility decreases with As addition due to the defect density. The transport properties for As doped a-Se films obtained by using MPG technique have been compared with X-ray sensitivity for a-Se:As device. The fabricated a-Se(0.3% As) device film exhibited the highest X-ray sensitivity out of 5 samples.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.416-419
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• 2002

There are being two prominent studying for Digital Radiography. Direct and Indirect method of Digital Radiography are announced for producing high quality digital image. The one is using amorphous selenium as photoconductor and the other is using phosphor layer as a light conversion. But each two systems have strength and weakness such as high voltage and blurring effect. In this study, we investigated the electrical characteristic of $multi-layer\left(CaWO_{4}+a-Se \right)$ as a photoconductor according to the changing arsenic composition ratio. This is a basic research for developing of Hybrid digital radiography which is a new type X-ray detector. The arsenic composition ratio of a-Se compound is classified into 7 different kinds which have 0.1%, 0.3%, 0.5%, 1%, 1.5%, 5%, 10% and were made test sample throught thermo-evaporation. The phosphor layer of $CaWO_4$ was overlapped on a-Se using EFIRON optical adhesives. We measured the dark and photo current about the test sample and compared the electrical characteristic of the net charge and signal-to-noise ratio. Among other things, test sample of compound material of 0.3% arsenic showed good characteristic of $2.45nA/cm^2$ dark current and $357.19pC/cm^2/mR$ net charge at $3V/{\mu}m$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.436-439
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• 2002

Recently, It has performed that the basic research of the photoconductive material and the development and application of the digital radiograph detector which is divided into the direct and indirect method. The objective of this study investigate the effect of the electric characteristic about changing the composition of Arsenic in hybrid detector system for compensating a defect of conventional. We fabricated samples using the amorphous Selenium and Arsenic alloy with various concentrations of the Arsenic{seven step 0.1%, 0.3%, 0.5%, 1%, 1.5%, 3%, 5%). And using EFIRON optical adhesives the formed multi-layer$(Gd_{2}O_{2}S(Eu^{2+}))$ composed phosphor layer. X-ray and light sensitivity was measured to study x-ray response characteritics. As results, highest value was measured as output net charge and SNR were $315.7pC/cm^2/mR$ and 99.4 at 0.3%As doping ratio.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.392-395
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• 2003

For the purpose of digital x-ray imaging, many materials such as $PbI_2$, $HgI_2$, TlBr, CdTe and CdZnTe have been under development for servaral years as direct converter layer. $Hgl_2$ film detector have recently been shown as one of the most promising semiconductor materials to be used as direct converters in x-ray digital radiography. This paper, the $HgI_2$ films are deposited on conductive-coated glass by screen printing, in which $HgI_2$ powder is embedded in a binder and solvent, and the slurry is used to coat the conductive-coated glass. We investigated electrical characteristic of the fabricated $HgI_2$ films. The x-ray response to radiological x-ray generator of 70Kvp using the current integration mode will be reported for screen printing films. These results indicate that $HgI_2$ detectors have high potential as new digital x-ray imaging devices for radiography.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.9
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• pp.3517-3523
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• 2010

Single exposure dual X-ray imaging can be used to separate soft and dense-material images for medical and industrial applications. This study keep focusing baggage inspection system(BIS) specifically. New detector modules for single exposure dual X-ray imaging are consisted of low energy detector (LED) and high energy detector (HED). First, the optimized thickness of copper filter coupled HED to separate low energy and high energy was simulated by the given X-ray energy (140 kVp, 1 mA) using Monte Carlo simulation codes, MCNPX. So as a result of simulation, the copper filter thickness is 0.7 mm. For the design of PIN photodiode, ATLAS device simulation tool was used. 16 channels PIN photodiode of 1.5 mm ${\times}$ 3.2 mm for Dual X-ray imaging detector was fabricated in the process of ETRI. And its dark current and quantum efficiency, terminal capacitance were measured. It was proven that the Lanex Fast B coupled HED were a sufficient candidate to replace the CsI(Tl) commerced in dual X-ray system, since these give a strong signal, overcoming system noise. Finally dual X-ray image was acquired through correction of the LED X-ray Image and the HED X-ray Image.