• Archives of Pharmacal Research
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• v.22 no.4
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• pp.384-390
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• 1999

Thirty-four glutathione conjugates of 5,8-dimethoxy-1,4-naphthoquinones (DMNQ) were synthesized and their structure was determined. The yield of GSH conjugate was dependent on size of alkyl group; the longer the size of alkyl group was, the lower was the yield. It was also found that the length of alkyl side chain influenced the chemical shift of quinonoid protons; the quinonoid protons of 2-glutathionyl DMNQ derivatives with R=H to propyl, 6.51-6.59 ppm vs. other ones with R=butyl to heptyl, 6.64-6.68 ppm. this was explained to be due to a folding effect of longer alkyl group. Glutathione (GSH) reacted with DMNQ derivative first to form a 1,4-adduct (2- or 3-glutathionyl-1,4-dihydroxy-5,8-dimethoxynaphthalenes) and then the adduct was autooxidized to 2- or 3-glutathionyl-DMNQ derivatives. Moreover, GSH reduced DMNQ derivatives to their hydrogenated products. It was suggested that such an organic reaction might play an important role for a study of metabolism or toxicity of DMNQ derivative sin the living cells.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.1
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• pp.1-4
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• 2000

Thin films of hydrogenated amorphous silicon carbide compounds ($a-Si_{x}C_{1-x}:H$) of different compositions were deposited on Si substrate by RF plasma-enhanced chemical vapor deposition (PECVD). Experiments were carried out using silane (SiH$_4$) and methane ($CH_4$) as the gas precursors at 1 Torr and at a low substrate temperature ($250^{\circ}C$). The gas flow rate was changed with the other parameters (pressure, temperature, RF power) fixed. The substrate was Si(100) wafer and all of the films obtained were amorphous. The bonding structure of $a-Si_{x}C_{1-x}:H$films deposited was investigated by X-ray photoelectron spectroscopy (XPS) for the film compositions. In addition, the surface morphology of films was investigated by atomic force microscopy (AFM).

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.389-392
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• 2009

Metal oxides have been proposed as an alternative channel material to hydrogenated amorphous silicon in thin film transistors (TFTs) because their higher mobility and stability make them suitable for transistor active layers. Thin films of indium zinc oxide (IZO) were deposited using a High Target Utilization Sputtering (HiTUS) system on various dielectrics, some of which were also deposited with the HiTUS. Investigations into bottom-gated IZO TFTs have found mobilities of 8 $cm^2V\;^1s^{-1}$ and switching ratios of $10^6$. There is a variation in the threshold voltage dependent on both oxygen concentration, and dielectric choice. Silica, alumina and silicon nitride produced stable TFTs, whilst hafnia was found to break down as a result of the IZO.

• Transactions on Electrical and Electronic Materials
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• v.10 no.3
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• pp.75-79
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• 2009

An intrinsic silicon thin film passivation layer is deposited by the microwave remote-plasma enhanced chemical vapor deposition at temperature of $175^{\circ}C$ and various gas ratios for solar cell applications. The good quality amorphous silicon films were formed at silane $(SiH_4)$ gas flow rates above 15 seem. The highest effective carrier lifetime was obtained at the $SiH_4$, flow rate of 20 seem and the value was about 3 times higher compared with the bulk lifetime of 5.6 ${\mu}s$ at a fixed injection level of ${\Delta}n\;=\;5{\times}10^{14}\;cm^{-3}$. An annealing treatment was performed and the carrier life times were increased approximately 5 times compared with the bulk lifetime. The optimal annealing temperature and time were obtained at 250 $^{\circ}C$ and 60 sec respectively. This indicates that the combination of the deposition of an amorphous thin film at a low temperature and the annealing treatment contributes to the excellent surface and bulk passivation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.411-414
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• 2009

It has been investigated for the film uniformity and deposition rate of a-C:H films on glass substrate and polymeric materials in the presence of the modulated crossed magnetic field. We used Plasma CVD, i.e, using a crossed electromagnetic field, for uniform depositing thin film. The optimum discharge condition has been discussed for the gas pressure, the magnetic flux density and the distance between substrate and electrodes, As a result, it is found that the optimum discharge conditions are $CH_4$ concentration $CH_4$=10 %, modulated magnetic flux density B=48 Gauss, pressure P=100 mTorr, discharge power supply voltage V=l kV under these experimental conditions. By using these experimental condition, it is possible to prepare the most uniform film extends over about 160 mm of the film width. In this study, we deposited a-C:H thin film on glass substrate, and have a plan that using this condition, study depositing a-C:H thin film on polymeric substrate in next studies.

• Proceedings of the SCSK Conference
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• 2003.09b
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• pp.369-369
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• 2003

Viscarin is a tradename given to viscosifying carrageenans manufactured by FMC BioPolymer. The suitability of Vis car ins as rheology agents in mild cleansing applications has been investigated. Rheological properties, foam volume and clarity were measured to determine the impact of including 1 % Viscarin on 10% solutions of the following surfactants: acylglutamate, cocoamidopropyl betaine, PEG-80 laurate, sodium lauryl sulphate and sodium lauryol sarcosinate. Viscosity, pseudoplasticity and thixotropy of Viscarin/surfactant solutions varied with surfactant type. In all cases, the addition of Viscarin substantially increased viscosity. For example, at a shear rate of 1 sol, all surfactant solutions had viscosities <0.1 Pa s while viscosities of Viscarin/surfactant solutions ranged from 10 to 60 Pa s. By comparison, a solution of 1 % Viscarin had a viscosity of 0.3 Pa s. Clarity of surfactant solutions decreased in all cases on the addition of Viscarin. However, it was found that by including a mild solubilizing surfactant, such as PEG 40 hydrogenated castor oil, crystal clarity could be maintained in Viscarin/surfactant solutions. Viscarin increased the foam volume of sodium lauryolsarcosinate solutions from 10 ml to 220 ml and had no impact on the foam volume of the other surfactants tested. These results were used to formulate a clear, ultra-mild foaming cleansing gel based on sodium lauryol sarcosinate and Viscarin without the need for a secondary, foam-boasting surfactant. A mild shampoo was also formulated. Both products have excellent skin-feel and are capable of suspending bubbles and solid inclusions.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.3
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• pp.130-136
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• 1989

Electrical transport and thermally induced metastability in hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) using boron-doped amorphous silicon as an active layer have been studied. The device characteristics n-channel and p-channel operations. The thermal quenching experiments on amorphous silicon-silicon nitride ambipolar TFT give clear evidence for the co-existence of two distinct metastable changes. The densities of metastable active dopants and dangling bonds increase with the quenching temperature. On the other hand, the interface state density appears to decrease with increasing quenching temperature.

• 보존과학연구
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• s.20
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• pp.139-154
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• 1999

We tested to obtain the excellent Epoxy resins on the property of matter. Existing Epoxy resins is tested to regulate the viscosity, color and hardening time etc. Benzen-ring structure of Bisphenol A type (AY 103) is replaced by Hydrogenated B.P.A type. And hardener is replaced by Polyoxyalkylene Amine. So we are developed into the two resins(L-30, L-40).To know if this Epoxy resins was fitted to repairing and restoration of stone cultural properties. Three kinds of Epoxy resins (AY 103, L-30, L-40) are tested on the artificial weathering test, freezing-melting test, exposure test etc. As a result of test, L-30 is less the discoloration than that of other Epoxy resins and was superior to the excellent property of matter.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.12
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• pp.565-569
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• 2006

Plasma enhanced chemical vapor deposition(PECVD) is a well established technique for the deposition of hydrogenated film of silicon nitride (SiNx:H), which is commonly used as an antireflection coating as well as passivating layer in crystalline silicon solar cell. PECVD-SiNx:H films were investigated by varying the deposition and annealing conditions to optimize for the application in silicon solar cells. By varying the gas ratio (ammonia to silane), the silicon nitride films of refractive indices 1.85 - 2.45 were obtained. The film deposited at $450^{\circ}C$ showed the best carrier lifetime through the film deposition rate was not encouraging. The film deposited with the gas ratio of 0.57 showed the best carrier lifetime after annealing at a temperature of $800^{\circ}C$. The single crystalline silicon solar cells fabricated in conventional industrial production line applying the optimized film deposition and annealing conditions on large area substrate of size $125mm{\times}125mm$ (pseudo square) was found to have the conversion efficiencies as high as 17.05 %. Low cost and high efficiency silicon solar cells fabrication sequence has also been explained in this paper.

• Transactions on Electrical and Electronic Materials
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• v.1 no.2
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• pp.7-11
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• 2000

a-Si:H and poly-Si TFT(thin film transistor) characteristics were investigated using an inverted staggered type TFT. The TFT an as-grown a-Si:H exhibited a low field effect mobility, transconductance, and high gate threshold voltage. The poly-Si films were achieved by using an isothermal and RTA treatment for glow discharge deposited a-Si:H films. The a-Si:H films were cystallized at the various temperature from 600$^{\circ}C$ to 1000$^{\circ}C$. As anneal temperature was elevated, the TFT exhibited increased g$\sub$m/ and reduced V$\sub$ds/. V$\sub$T/. The poly-Si grain boundary passivation with grain boundary trap types and activation energies as a function of anneal temperature. The poly-si TFT showed an improved I$\sub$nm//I$\sub$off/ ratio of 10$\^$6/, reduced gate threshold voltage, and increased field effect mobility by three orders.