• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.6
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• pp.261-264
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• 2012

In this paper, we investigated characteristics of etching induced surface morphology variation by wet etching of GaN epilayer were grown on sapphire (0001) substrate by hydride vapor phase epitaxy (HVPE). As a results of scanning electron microscope (SEM) observation, three types of hexagonal etch pits (Edge, Screw, Mixed) were formed by the GaN epilayer thickness variations. A lot of etch pits, attributed to screw and mixed type TD, were observed at thinner epilayer, leading to high etch pit density. On the other hand, the thickness of GaN epilayer increased with the number of etch pits corresponding to edge and mixed dislocations, which are the majority of TDs are observed.

• Journal of the Korean Chemical Society
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• v.17 no.4
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• pp.275-285
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• 1973

The addition of one mole of aluminum chloride to three moles of sodium borohydride in tetrahydrofuran gives a turbid solution with enormously more powerful reducing properties than those of sodium borohydride itself. The reducing properties of this reagent were tested with 49 organic compounds which have representative functional groups. Alcohols liberated hydrogen immediately but showed no sign of hydrogenolysis of alkoxy group. Aldehydes and ketones were reduced rapidly within one hr. Acyl derivatives were reduced moderately, however, carboxylic acids were reduced much more slowly. Esters, lactones and epoxides were reduced readily than sodium borohydride or borane. Tertiary amide was reduced slowly, however, primary amide consumed one hydride for hydrogen evolution but reduction was sluggish. Aromatic nitrile was reduced much more readily than aliphatic nitrile. Nitro compounds were inert to this reagent but azo and azoxy groups were slowly attacked. Oxime was reduced slowly but isocyanate was only partially reduced. Disulfide and sulfoxide were attacked slowly but sulfide and sulfone were inert. Olefin was hydroborated rapidly.

• Polymer(Korea)
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• v.27 no.1
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• pp.3-8
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• 2003

Polysiloxanes with methacrylate groups at both terminals were synthesized by a hydrosilylation reaction between allyl methacrylate and hydride-terminated polysiloxanes. The polysiloxane methacrylates with high molecular weights could be prepared through the reaction of polysiloxane methacrylates and octamethylcyclotetrasiloxane with an acid catalyst. The structures of the prepared polysiloxane methacrylates were verified by $^1$H- and $^{29}Si-NMR.$ The polysiloxane methacrylates were freely miscible with silicone oils. Polysiloxane films with microphase-separated liquid silicone oil were prepared by photo-crosslinking the mixture of polysiloxane methacrylates and silicone oil. Scanning electron microscopy (SEM) of the films showed that the size of silicone oil droplets became smaller with a lower loading of silicone oil, lower molecular weight of polysiloxane methacrylate, and lower molecular weight of silicone oil.

• Korean Journal of Food Science and Technology
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• v.17 no.5
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• pp.383-388
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• 1985

Soy protein isolate was acylated with succinic anhydride and acetic anhydride. The functional properties are markedly improved by acylation of the $\varepsilon$-amino groups. Acylation of the available amino groups shifted the isoelectric point from 4.5 to 4.0 and enhanced the solubility between pH 4.0-6.0. In the 0.03M-$CaCl_2$ solution the solubility of the modified soy protein is much larger than that of the unmodified protein above the isoelectric point. The emulsion properties and foaming properties also improved by the modification and the effects of pH on the properties paralleled its effect on protein solubility. The changes of reduced viscosity with concentration followed Huggin's equation and by modification the intrinsic viscosity of the soy protein increased and the interaction coefficient decreased.

• Korean Journal of Materials Research
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• v.8 no.8
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• pp.667-671
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• 1998

The photoluminescence (pL) characteristics of hydride vapor phase epiyaxy (HVPE) grown GaN films on $MgAl_{2}O_{4}$ substrate were investigated with several growth conditions. The GaN films on $MgAl_{2}O_{4}$ substrate is autodoped with Mg atoms which thermally out-diffused from substrate lead to a PL characteristics of impurity doped ones. The Mg-related emission band intensity decreased with growth temperature may due to the evaporation of Mg atoms at the GaN film surfaces. and it also decreased with GaN film thicknesses. We can estimate the diffusion coefficient of Mg atoms in GaN under the consideration of diffusion phenomena between two infinite solids lead to a value of D= 2$\times$$lO^{-10}\textrm{cm}^2/sec.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.6
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• pp.386-391
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• 2018

An epitaxial GaN layer was grown on a cone-shape-patterned sapphire substrate (PSS) (Sample A) and an AlN-buffered PSS (Sample B) with two growth steps under the same process conditions by employing the hydride vapor phase epitaxy (HVPE) method. We have investigated the characteristics of the GaN layer grown on two kinds of substrates at each growth step. The cross-sectional SEM image of the GaN layer grown on the two types of substrates showed growth states of GaN layers formed during the 1st and 2nd growth steps with different growth durations. Dislocation density was obtained by calculation using the FWHM value of the rocking curve for (002) and (102). Sample A showed 2.62+08E and 6.66+08E and sample B exhibited 5.74+07E and 1.65+08E for two different planes. The red shift was observed is photoluminescence (PL) analysis and Raman spectroscopy results. GaN layers grown on AlN-buffered PSS exhibited better optical and crystallographic properties than GaN layers grown on PSS.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.175-175
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• 2000

Si(100) surfaces were exposed to gas-phase thermal-energy hydrogen atoms, H(g). We find that thermal H(g) atoms etch, amorphize, or penetrate into the crystalline silicon substrate, depending on the employed Ts range during the H(g) exposure. We find that etching is enhanced as Ts is lowered in the 300-700K range, while amorphous silicon hydride (a-Si:H) formation dominates at a Ts below 300K. This result was well explained by the fact that formation of the etching precursor, SiHx(a), and amorphization are both facilitated by a lower Ts, whereas the final step for etching, SiH3(a) + H(g) longrightarrow SiH3(g), is suppressed at a lower Ts. we also find that direct absorption of H(g) by the crystalline bulk of Si(100) substrate occurs within a narrow Ts window of 420-530K. The bulk-absorbed hydrogen evolved out molecularly from Si(100) at a Ts 80-120K higher than that for surface monohydride phase ($\beta$1) in temperature-programmed desorption. This bulk-phase H uptake increased with increasing H(g) exposure without saturation within our experimental limits. Direct absorption of H(g) into the bulk lattice occurs only when the surface is atomically roughened by surface etching. While pre-adsorbed hydrogen atoms on the surface, H(a), were readily abstracted and replaced by D(g), the H atoms previously absorbed in the crystalline bulk were also nearly all depleted, albeit at a much lower rate, by a subsequent D(g) at the peak temperature in TPD from the substrate sequentially treated with H(g) and D(g), together with a gas phase-like H2 Raman frequency of 4160cm-1, will be presented.

• Korean Journal of Materials Research
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• v.15 no.11
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• pp.735-740
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• 2005

The phase transformation of Ni-B diffusion barrier by Cu diffusion was studied. The Ni-B diffusion barrier, thickness of 10(Inn, was electrolessly deposited on the electroplated Cu interconnect. The specimens were annealed either in Ar atmosphere or in $H_2$ atmosphere from $300^{\circ}C\;to\;800^{\circ}C$ for 30min, respectively. Although the Ni-B coated specimens showed the decomposition of $Ni_3B$ above $400^{\circ}C$ in both Ar atmosphere and $H_2$ atmosphere, Ni-B powders did not show the decomposition of $Ni_3B$. The $Ni_3B$ was decomposed to Ni and B in hi atmospherr: and the metallic Ni formed the solid solution with Cu and the free B was oxidized to $B_2O_3$. However, both the boron hydride and free B were not observed in the diffusion barrier after the annealing in $H_2$ atmos There. These results revealed that the decomposition of $Ni_3B$ by Cu made the Cu diffusion continued toward the Ni-B diffusion barrier.

• Korean Journal of Materials Research
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• v.9 no.6
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• pp.599-603
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• 1999

We have investigated the growth characteristics of thick GaN on Sim substrate with AlN and low temperature GaN buffer layer. The vertical hydride vapor phase epitaxy system with $GaCl_3$ precursor was used for growth of GaN. AlN and GaN buffer layer were deposited on Si substrate to reduce the lattice mismatch and the thermal expansion coefficient mismatch between si and GaN. Optimization of deposition condition for AlN and low temperature GaN buffer layers were carried out. We studied the effects of growth temperature, V/III ratio on the properties of thick GaN. Surface morphology, growth rate and crystallinity of thick GaN were measured using Atomic Force Microscopy (AFM), $\alpha-step$-, Scanning Electron Microscopy (SEM) and X-Ray Diffractometer(XRD).

• Bulletin of the Korean Chemical Society
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• v.14 no.1
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• pp.137-143
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• 1993

The tetranuclear heterometallic complex CpMo$Os_3(CO)_{10}({\mu]-H)2[{\mu}3-{\eta}^2-C(O)CH_2Tol]\;(1,\;Cp={\eta}^5-C_5H_5,\;Tol=p-C_6H_4Me)$ has been examined by variable-temperature $^{13}$C-NMR spectroscopy and by a full three-dimensional X-ray structual analysis. Complex 1 crystallizes in the orthorhombic space group Pna2$_1$ with a = 12.960(1) ${\AA}$, b = 11.255(l) ${\AA}$, c = 38.569(10)${\AA}$, V = 5626(2) ${\AA}^3$ and ${\rho}$(calcd) = 2.71 gcm$^{-3}$ for Z = 8 and molecular weight 1146.9. Diffraction data were collectedon a CAD4 diffractometer, and the structure was refined to $R_F$ = 9.7% and $R_{W^F}$ = 9.9% for 2530 data (MoK${\alpha}$ radiation). There are two essentially equivalent molecules in the crystallographic asymmetric unit. The tetranuclear molecule contains a triangulated rhomboidal arrangement of metal atoms with Os(2) and Mo at the two bridgehead positions. The metal framework is planar; the dihedral angle between Os(l)-Os(2)-Mo and Os(3)-Os(2)-Mo planes is 180$^{\circ}$. A triply bridging (${\mu}_3,\;{\eta}^2$) acyl ligand lies above the Os(l)-Os(2)-Mo plane; the oxygen atom spans the two bridgehead positions, while the carbon atom spans one bridgehead position and an acute apical position. The molecular architecture is completed by an ${\eta}^5$-cyclopentadienyl ligand and a semi-triply bridging carbonyl ligand on the molybdenum atom, and nine terminal carbonyl ligands-four on Os(3), three on Os(l), and two on Os(2). The two hydride ligands are inferred to occupy the Os(l)-Os(2) and Mo-Os(3) edges from structural and NMR data.